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    RADICAL-ACTIVATED CARBON FILM DEPOSITION
    2.
    发明申请
    RADICAL-ACTIVATED CARBON FILM DEPOSITION 审中-公开

    公开(公告)号：WO2022271525A1

    公开(公告)日：2022-12-29

    申请号：PCT/US2022/033777

    申请日：2022-06-16

    Applicant: LAM RESEARCH CORPORATION

    Inventor： VARADARAJAN, Bhadri N. ,  WEIMER, Matthew Scott

    IPC: C23C16/26 ,  C23C16/448 ,  C23C16/50 ,  C01B32/186

    Abstract: Crystalline or amorphous carbon films are deposited on a substrate using radical-activated carbon-containing precursors. The carbon-containing precursors include one or more C-C bonds and/or one or more C-H bonds. Radicals are generated in a remote plasma source located upstream of a reaction chamber, and carbon-containing precursors are flowed into the reaction chamber downstream from the remote plasma source. The radicals interact with the C-C bonds and/or C-H bonds to activate the carbon-containing precursors in an environment adjacent to the substrate. In some implementations, highly conformal amorphous carbon films are deposited by radical-activated carbon-containing precursors.

    A PROCESS AND PLANT FOR CARBON EXTRACTION
    4.
    发明申请
    A PROCESS AND PLANT FOR CARBON EXTRACTION 审中-公开

    公开(公告)号：WO2022261697A1

    公开(公告)日：2022-12-22

    申请号：PCT/AU2022/050583

    申请日：2022-06-14

    Applicant: BARRINGTON IP HOLDINGS PTY LTD

    Inventor： DAVEY, Garth Barrington ,  MADDALI, Venkata Vijay Kumar

    IPC: B82Y40/00 ,  B01D45/12 ,  B01D53/00 ,  B01D53/24 ,  B04C5/085 ,  C23C16/26 ,  C01B32/164

    Abstract: Processes and plants are disclosed for separating carbon dioxide from a flue gas stream, for providing a source of atomic carbon by disassociating carbon dioxide and for generating electrical power from by-products of producing atomic carbon. In relation to separating carbon dioxide from a flue gas stream, the disclosed process includes energising a gas stream containing carbon dioxide to produce a disassociated stream by disassociating the carbon dioxide into atomic carbon and atomic oxygen using an energising apparatus. The process further includes separating the atomic carbon and the atomic oxygen into a carbon stream containing an atomic carbon phase and an oxygen stream containing an atomic oxygen phase using a high temperature cyclone apparatus.

    辅助工装及预制件承载装置及用于预制体增密的装炉结构
    6.
    发明申请
    辅助工装及预制件承载装置及用于预制体增密的装炉结构 审中-公开

    公开(公告)号：WO2022233177A1

    公开(公告)日：2022-11-10

    申请号：PCT/CN2022/077699

    申请日：2022-02-24

    Applicant: 隆基绿能科技股份有限公司

    Inventor： 李梦飞 ,  姚宏 ,  成路 ,  赵领航 ,  段滨 ,  杜路路 ,  高攀红 ,  豆菲菲 ,  黄志鹏

    IPC: C23C16/458 ,  C23C16/54 ,  C04B35/83 ,  C23C16/26

    Abstract: 本公开公开一种辅助工装及预制件承载装置，涉及光伏拉晶技术领域，用于提高沉积炉的单次装炉量，提高沉积效率，降低生产成本。该辅助工装包括：至少一个基座和至少一个支撑板，每个支撑板设在相应基座上，每个支撑板具有贯穿支撑板的至少一个透气孔。当多个预制件叠置时，基座的至少部分部位位于至少一个预制件的第一腔体内或外，至少一个预制件位于相应支撑板上，位于相应支撑板上的预制件具有的第一腔体与相应支撑板具有的至少一个透气孔连通。所述预制件承载装置包括料柱以及上述辅助工装，本公开提供的辅助工装用于辅助多个预制件叠置在沉积炉内。本公开还公开一种用于预制体增密的装炉结构。

    LOW TEMPERATURE GRAPHENE GROWTH
    7.
    发明申请
    LOW TEMPERATURE GRAPHENE GROWTH 审中-公开

    公开(公告)号：WO2022150272A1

    公开(公告)日：2022-07-14

    申请号：PCT/US2022/011061

    申请日：2022-01-04

    Applicant: APPLIED MATERIALS, INC.

    Inventor： WANG, Jialiang ,  ROY, Susmit Singha ,  MALLICK, Abhijit Basu ,  INGLE, Nitin K.

    IPC: H01L21/285 ,  H01L21/768 ,  C23C16/26 ,  C23C16/50

    Abstract: Exemplary methods of semiconductor processing may include delivering a carbon-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include generating a plasma of the carbon-containing precursor and the hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include forming a layer of graphene on a substrate positioned within the processing region of the semiconductor processing chamber. The substrate may be maintained at a temperature below or about 600 °C. The methods may include halting flow of the carbon-containing precursor while maintaining the plasma with the hydrogen-containing precursor.

    DIAMOND-LIKE CARBON COATINGS AND METHODS OF MAKING THE SAME
    8.
    发明申请
    DIAMOND-LIKE CARBON COATINGS AND METHODS OF MAKING THE SAME 审中-公开

    公开(公告)号：WO2022125130A1

    公开(公告)日：2022-06-16

    申请号：PCT/US2021/021187

    申请日：2021-03-05

    Applicant: ACCUAR DIGITAL CO., LTD.

    Inventor： HWANG, Kuo, Hsing ,  LU, Xing

    IPC: C23C28/04 ,  C23C14/06 ,  C23C16/26 ,  C23C16/27

    Abstract: In accordance with some embodiments of the present disclosure, a diamond-like carbon coating is provided. The diamond-like carbon coating may include a substrate and a diamond- like carbon film formed on the substrate. The diamond-like carbon film may include a plurality of layers of diamond-like carbon. A first layer of diamond-like carbon in the diamond-like carbon film is softer than a second layer of diamond-like carbon in the diamond-like carbon film. In some embodiments, the diamond-like carbon coating may further include a barrier layer and/or a UV protection layer formed between the substrate and the diamond-like carbon film. In some embodiments, the diamond-like carbon coating may further include a hydrophobic layer formed on the diamond-like carbon film. The diamond-like carbon coating is optically transparent.

    成膜方法及び成膜装置
    9.
    发明申请
    成膜方法及び成膜装置 审中-公开

    公开(公告)号：WO2022107611A1

    公开(公告)日：2022-05-27

    申请号：PCT/JP2021/040724

    申请日：2021-11-05

    Applicant: 東京エレクトロン株式会社

    Inventor： 杉浦　正仁 ,  松本　貴士

    IPC: C01B32/186 ,  C23C16/26 ,  C23C16/50 ,  H01L21/205 ,  H05H1/46

    Abstract: 本開示は、凹部を有する基板にカバレッジ性良く且つコンフォーマルにグラフェン膜を形成することができる技術を提供する。　本開示の成膜方法は、搬入工程と、成膜工程とを含む。搬入工程は、凹部を有する基板を処理容器内に搬入して、処理容器内に設けられた載置台上に載置する。成膜工程は、載置台に電力が処理容器内の圧力に応じて決定される上限値以下である高周波バイアスを印加しながら、不活性ガス及び炭素含有ガスを含む混合ガスのプラズマにより、基板にグラフェン膜を形成する。

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