公开(公告)号：WO2020169303A1

公开(公告)日：2020-08-27

申请号：PCT/EP2020/051778

申请日：2020-01-24

Applicant: ASML NETHERLANDS B.V.

Inventor： TAO, Jun ,  BARON, Stanislas, Hugo, Louis ,  SU, Jing ,  LUO, Ya ,  CAO, Yu

IPC: G03F1/36 ,  G03F7/20 ,  G06N3/08 ,  G06N20/00

Abstract: Described herein are training methods and a mask correction method. One of the methods is for training a machine learning model configured to predict a post optimal proximity correction (OPC) image for a mask. The method involves obtaining (i) a pre-OPC image associated with a design layout to be printed on a substrate, (ii) an image of one or more assist features for the mask associated with the design layout, and (iii) a reference post- OPC image of the design layout; and training the machine learning model using the pre-OPC image and the image of the one or more assist features as input such that a difference between the reference image and a predicted post-OPC image of the machine learning model is reduced.

公开(公告)号：WO2022128500A1

公开(公告)日：2022-06-23

申请号：PCT/EP2021/083917

申请日：2021-12-02

Applicant: ASML NETHERLANDS B.V.

Inventor： TAO, Jun ,  CAO, Yu ,  SPENCE, Christopher, Alan

IPC: G03F1/36 ,  G03F7/20

Abstract: Described herein are a method for determining a mask pattern and a method for training a machine learning model. The method for generating data for a mask pattern associated with a patterning process includes obtaining (i) a first mask image (e.g., CTM) associated with a design pattern, (ii) a contour (e.g., a resist contour) based on the first mask image, (iii) a reference contour (e.g., an ideal resist contour) based on the design pattern; and (iv) a contour difference between the contour and the reference contour. The contour difference and the first mask image are inputted to a model to generate mask image modification data. Based on the first mask image and the mask image modification data, a second mask image is generated for determining a mask pattern to be employed in the patterning process.

公开(公告)号：WO2022128373A1

公开(公告)日：2022-06-23

申请号：PCT/EP2021/082756

申请日：2021-11-24

Applicant: ASML NETHERLANDS B.V.

Inventor： HOUBEN, Tim ,  HUISMAN, Thomas, Jarik ,  PISARENCO, Maxim ,  MIDDLEBROOKS, Scott, Anderson ,  BATISTAKIS, Chrysostomos ,  CAO, Yu

IPC: G06T7/593

Abstract: Described herein are system, method, and apparatus for determining three-dimensional (3D) information of a structure of a patterned substrate. The 3D information can be determined using one or more model configured to generate 3D information (e.g., depth information) using only a single image of a patterned substrate. In a method, the model is trained by obtaining a pair of stereo images of a structure of a patterned substrate. The model generates, using a first image of the pair of stereo images as input, disparity data between the first image and a second image, the disparity data being indicative of depth information associated with the first image. The disparity data is combined with the second image to generate a reconstructed image corresponding to the first image. Further, one or more model parameters are adjusted based on the disparity data, the reconstructed image, and the first image.

公开(公告)号：WO2021052712A1

公开(公告)日：2021-03-25

申请号：PCT/EP2020/073449

申请日：2020-08-21

Applicant: ASML NETHERLANDS B.V.

Inventor： CAO, Yu ,  SCRANTON, Greggory ,  SU, Jing ,  ZOU, Yi

IPC: G03F1/36 ,  G03F1/70 ,  G03F7/20 ,  G06N20/00

Abstract: Described herein are methods of generating a characteristic pattern for a patterning process and training a machine learning model. A method of training a machine learning model configured to generate a characteristic pattern for a mask pattern includes obtaining (i) a reference characteristic pattern (EFMs) that meets a satisfactory threshold related to manufacturing of the mask pattern, and (ii) a continuous transmission mask (CTM) for use in generating the mask pattern; and training, based on the reference characteristic pattern and the CTM, the machine learning model such that a first metric between the characteristic pattern (EFM1) and the CTM, and a second metric between the characteristic pattern (EFM1) and the reference characteristic pattern (EFMs) is reduced.

公开(公告)号：WO2021023602A1

公开(公告)日：2021-02-11

申请号：PCT/EP2020/071449

申请日：2020-07-29

Applicant: ASML NETHERLANDS B.V.

Inventor： SHAYEGAN SALEK, Mir Farrokh ,  HOWELL, Rafael C. ,  ZHENG, Yunan ,  WEI, Haiqing ,  CAO, Yu

IPC: G03F7/20 ,  G03F7/70283 ,  G03F7/705

Abstract: A method of simulating a pattern to be imaged onto a substrate using a photolithography system, includes obtaining a pattern to be imaged onto the substrate, smoothing the pattern, and simulating an image of the smoothed pattern. The smoothing may include application of a graphical low pass filter and the simulating may include application of edge filters from an edge filter library.

公开(公告)号：WO2019238372A1

公开(公告)日：2019-12-19

申请号：PCT/EP2019/063282

申请日：2019-05-23

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN DEN BRINK, Marinus ,  CAO, Yu ,  ZOU, Yi

IPC: G03F7/20 ,  G03F1/36

Abstract: Described herein is a method for calibrating a process model and training an inverse process model of a patterning process. The training method includes obtaining a first patterning device pattern from simulation of an inverse lithographic process that predicts a patterning device pattern based on a wafer target layout, receiving wafer data corresponding to a wafer exposed using the first patterning device pattern; and training an inverse process model configured to predict a second patterning device pattern using the wafer data related to the exposed wafer and the first patterning device pattern.

公开(公告)号：WO2018153735A1

公开(公告)日：2018-08-30

申请号：PCT/EP2018/053589

申请日：2018-02-13

Applicant: ASML NETHERLANDS B.V.

Inventor： LIU, Peng ,  LUO, Ya ,  CAO, Yu ,  LU, Yen-Wen

IPC: G03F7/20 ,  G06F17/50

Abstract: A method including: obtaining characteristics of a portion of a design layout; determining characteristics of M3D of a patterning device including or forming the portion; by using a computer, training a neural network using training data including a sample whose feature vector includes the characteristics of the portion and whose supervisory signal comprises the characteristics of the M3D. Also disclosed is a method including: obtaining characteristics of a portion of a design layout; obtaining characteristics of a lithographic process that uses a patterning device including or forming the portion; determining characteristics of a result of the lithographic process; by using a computer, training a neural network using training data including a sample whose feature vector comprises the characteristics of the portion and the characteristics of the lithographic process, and whose supervisory signal comprises the characteristics of the result.

公开(公告)号：WO2018121967A1

公开(公告)日：2018-07-05

申请号：PCT/EP2017/081744

申请日：2017-12-06

Applicant: ASML NETHERLANDS B.V.

Inventor： CAO, Yu ,  LU, Yen-Wen ,  LIU, Peng ,  HOWELL, Rafael C. ,  BISWAS, Roshni

IPC: G03F7/20 ,  G03F1/36

Abstract: A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function is a continuous transmission mask (CTM) and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.