Abstract:
A membrane for EUV lithography, the membrane having a thickness of no more than 200 nm and comprising a stack comprising: at least one silicon layer; and at least one silicon compound layer made of a compound of silicon and an element selected from the group consisting of boron, phosphorous, bromine
Abstract:
Methods of manufacturing a pellicle for a lithographic apparatus are disclosed. In one arrangement the method comprises depositing at least one graphene layer on a planar surface of a substrate. The substrate comprises a first substrate portion and a second substrate portion. The method further comprises removing the first substrate portion to form a freestanding membrane from the at least one graphene layer. The freestanding membrane is supported by the second substrate portion.
Abstract:
Disclosed is a membrane transmissive to EUV radiation, which may be used as a pellicle or spectral filter in a lithographic apparatus. The membrane comprises one or more high doped regions wherein said membrane is doped with a dopant concentration greater than 10 17 cm -3 , and one or more regions with low (or no) doping. The membrane may have a main substrate having low doping and one or more additional layers, wherein said high doped regions are comprised within some or all of said additional layers.