公开(公告)号：WO2012127399A1

公开(公告)日：2012-09-27

申请号：PCT/IB2012/051293

申请日：2012-03-19

Applicant: BASF SE ,  NOLLER, Bastian ,  LAUTER, Michael ,  SUGIHARTO, Albert Budiman ,  LI, Yuzhuo ,  RUSHING, Kenneth ,  FRANZ, Diana ,  BÖHN, Roland ,  BASF (CHINA) COMPANY LIMITED

Inventor： NOLLER, Bastian ,  LAUTER, Michael ,  SUGIHARTO, Albert Budiman ,  LI, Yuzhuo ,  RUSHING, Kenneth ,  FRANZ, Diana ,  BÖHN, Roland

IPC: C09G1/02

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09G1/04 ,  C09K3/1463 ,  H01L21/30625

Abstract: A chemical-mechanical polishing ("CMP") composition (P) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of A/-heterocyclic compound as corrosion inhibitor, (C) at least one type of a further corrosion inhibitor selected from the group consisting of: (C1 ) an acetylene alcohol, and (C2) a salt or an adduct of (C2a) an amine, and (C2b) a carboxylic acid comprising an amide moiety, (D) at least one type of an oxidizing agent, (E) at least one type of a complexing agent, and (F) an aqueous medium.

Abstract translation: 包含（A）无机颗粒，有机颗粒或其混合物或复合物的化学机械抛光（“CMP”）组合物（P），（B）至少一种作为防腐剂的A / ）至少一种类型的另外的腐蚀抑制剂，其选自：（C1）炔属醇和（C2）（C2a）胺的盐或加合物，和（C2b）包含酰胺的羧酸 部分，（D）至少一种类型的氧化剂，（E）至少一种类型的络合剂，和（F）水性介质。

公开(公告)号：WO2011058503A1

公开(公告)日：2011-05-19

申请号：PCT/IB2010/055101

申请日：2010-11-10

Applicant: BASF SE ,  LAUTER, Michael ,  RAMAN, Vijay Immanuel ,  LI, Yuzhuo ,  VENKATARAMAN, Shyam Sundar ,  SHEN, Daniel Kwo-Hung ,  BASF (CHINA) COMPANY LIMITED

Inventor： LAUTER, Michael ,  RAMAN, Vijay Immanuel ,  LI, Yuzhuo ,  VENKATARAMAN, Shyam Sundar ,  SHEN, Daniel Kwo-Hung

IPC: C09G1/02

CPC classification number: C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

Abstract: A chemical mechanical polishing (CMP) composition, comprising (A) at least one type of inorganic particles which are dispersed in the liquid medium (C), (B) at least one type of polymer particles which are dispersed in the liquid medium (C), (C) a liquid medium, wherein the zeta-potential of the inorganic particles (A) in the liquid medium (C) and the zeta-potential of the polymer particles in the liquid medium (C) are of same signs.

Abstract translation: 一种化学机械抛光（CMP）组合物，其包含（A）分散在液体介质（C）中的至少一种类型的无机颗粒，（B）分散在液体介质（C）中的至少一种类型的聚合物颗粒 ），（C）液体介质（C）中的无机粒子（A）的ζ电位和液体介质（C）中的聚合物粒子的ζ电位相同的液体介质。

公开(公告)号：WO2020120641A1

公开(公告)日：2020-06-18

申请号：PCT/EP2019/084771

申请日：2019-12-12

Applicant: BASF SE

Inventor： GUEVENC, Haci Osman ,  LAUTER, Michael ,  WEI, Te Yu ,  CHIU, Wei Lan ,  GOLZARIAN, Reza ,  PROELSS, Julian ,  LEUNISSEN, Leonardus

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/30 ,  H01L21/321 ,  H01L21/02

Abstract: The presently claimed invention relates to a chemical-mechanical polishing (CMP) composition and chemical-mechanical polishing (CMP) methods. The presently claimed invention particularly relates to a composition and process for chemical-mechanical polishing of substrates containing copper and ruthenium, specifically, semiconductor substrates containing copper and ruthenium.

公开(公告)号：WO2020120522A1

公开(公告)日：2020-06-18

申请号：PCT/EP2019/084539

申请日：2019-12-11

Applicant: BASF SE

Inventor： GUEVENC, Haci Osman ,  LAUTER, Michael ,  WEI, Te Yu ,  CHIU, Wei Lan ,  GOLZARIAN, Reza ,  PROELSS, Julian ,  LEUNISSEN, Leonardus

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/30 ,  H01L21/321 ,  H01L21/02

Abstract: The presently claimed invention relates to a chemical-mechanical polishing (CMP) composition and chemical-mechanical polishing (CMP)methods. The presently claimed invention particularly relates to a composition and process for chemical-mechanical polishing of substrates containing copper and ruthenium, specifically, semiconductor substrates containing copper and ruthenium.

公开(公告)号：WO2020120520A1

公开(公告)日：2020-06-18

申请号：PCT/EP2019/084537

申请日：2019-12-11

Applicant: BASF SE

Inventor： GUEVENC, Haci Osman ,  LEUNISSEN, Leonardus ,  LAUTER, Michael ,  GOLZARIAN, Reza ,  DAESCHLEIN, Christian ,  PROELSS, Julian ,  WEI, Te Yu

IPC: C09G1/02 ,  H01L21/30 ,  C09K3/14 ,  H01L21/321 ,  H01L21/02

Abstract: The presently claimed invention relates to a chemical-mechanical polishing (CMP) composition and chemical-mechanical polishing (CMP) methods. The presently claimed invention particularly relates to a composition and process for chemical-mechanical polishing of substrates containing copper and ruthenium, specifically, semiconductor substrates containing copper and ruthenium.

公开(公告)号：WO2017162462A1

公开(公告)日：2017-09-28

申请号：PCT/EP2017/055826

申请日：2017-03-13

Applicant: BASF SE

Inventor： LAUTER, Michael ,  GUEVENC, Haci Osman ,  SIEBERT, Max ,  LAN, Yongqing ,  USMAN IBRAHIM, Sheik Ansar ,  GOLZARIAN, Reza M. ,  WEI, Te Yu

IPC: C09G1/04

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a poly(amino acid) and or a salt thereof (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

Abstract translation: 化学机械抛光（CMP）组合物（Q）用于包含（i）钴和/或（ii）钴合金的基材（S）的化学机械抛光的用途，其中所述CMP组合物 （Q）包含（A）无机颗粒（B），聚氨基酸和/或其盐（C）至少一种氨基酸，（D）至少一种氧化剂（E），水性介质，并且其中所述CMP组合物 （Q）的pH值为7-10。

公开(公告)号：WO2017108743A1

公开(公告)日：2017-06-29

申请号：PCT/EP2016/081847

申请日：2016-12-20

Applicant: BASF SE

Inventor： DÄSCHLEIN, Christian ,  SIEBERT, Max ,  LAUTER, Michael ,  PRZYBYLSKI, Peter ,  PROELSS, Julian ,  KLIPP, Andreas ,  GUEVENC, Haci Osman ,  LEUNISSEN, Leonardus ,  BAUMANN, Roelf-Peter ,  WEI, Te Yu

IPC: C11D3/37 ,  C11D11/00 ,  H01L21/02 ,  H01L21/321

CPC classification number: C11D11/0047 ,  C11D3/3707 ,  C11D3/3719 ,  C11D3/3765 ,  C11D3/378 ,  C11D3/3784 ,  C11D11/0035 ,  H01L21/02074

Abstract: Described is a post chemical-mechanical-polishing (post-CMP) cleaning composition comprising or consisting of: (A) polyethylene glycol (PEG) with a mass average molar mass (Mw) in the range of from 400 to 8,000 g/mol, (B) an anionic polymer selected from the group consisting of poly(acrylic acid) (PAA), acrylic acid-maleic acid copolymers, polyaspartic acid (PASA), polyglutamic acid (PGA), polyvinylphosphonic acid, polyvinylsulfonic acid, poly(styrenesulfonic acid), polycarboxylate ethers (PCE), PEG-phosphorous acids, and copolymers of said polymers, and (C) water, wherein the pH of the composition is in the range of from 7.0 to 10.5.

Abstract translation: 描述了后化学机械抛光（CMP后）清洁组合物，其包含以下成分或由以下成分组成：（A）质量平均摩尔质量（M w）为的聚乙二醇（PEG），其范围为 （B）选自聚（丙烯酸）（PAA），丙烯酸 - 马来酸共聚物，聚天冬氨酸（PASA），聚谷氨酸（PGA），聚乙烯基膦酸 ，聚乙烯基磺酸，聚（苯乙烯磺酸），聚羧酸酯醚（PCE），PEG-亚磷酸和所述聚合物的共聚物，和（C）水，其中组合物的pH为7.0-10.5。 / p>

公开(公告)号：WO2017025536A1

公开(公告)日：2017-02-16

申请号：PCT/EP2016/068964

申请日：2016-08-09

Applicant: BASF SE

Inventor： REICHARDT, Robert ,  SIEBERT, Max ,  LAN, Yongqing ,  LAUTER, Michael ,  USMAN IBRAHIM, Sheik Ansar ,  GOLZARIAN, Reza M. ,  WEI, Te Yu ,  GUEVENC, Haci Osman ,  PROELSS, Julian ,  LEUNISSEN, Leonardus

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy and (iii) Ti N and /or TaN, wherein the CMP composition (Q) comprises (E) Inorganic particles (F) at least one organic compound comprising an amino-group and an acid group (Y), wherein said compound comprises n amino groups and at least n+1 acidic protons, wherein n is a integer ≥ 1. (G) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the respective CMP composition, (H) an aqueous medium wherein the CMP composition (Q) has a pH of more than 6 and less than 9.

Abstract translation: 使用化学机械抛光（CMP）组合物（Q）用于包括（i）钴和/或（ii）钴合金和（iii）TiN和/或TaN的基底（S）的化学机械抛光，其中 CMP组合物（Q）包含（E）无机颗粒（F）至少一种包含氨基和酸基（Y）的有机化合物，其中所述化合物包含n个氨基和至少n + 1个酸性质子，其中n （G）至少一种氧化剂，其量相对于相应的CMP组合物的总重量为0.2至2.5重量％，（H）其中CMP组合物（Q）具有的水性介质 pH大于6且小于9。

公开(公告)号：WO2015008193A1

公开(公告)日：2015-01-22

申请号：PCT/IB2014/062940

申请日：2014-07-08

Applicant: BASF SE ,  BASF (CHINA) COMPANY LIMITED

Inventor： LAUTER, Michael ,  NOLLER, Bastian Marten ,  LANGE, Roland ,  REICHARDT, Robert ,  LAN, Yongqing ,  BOYKO, Volodymyr ,  KRAUS, Alexander ,  SEYERL, Joachim von ,  USMAN IBRAHIM, Sheik Ansar ,  SIEBERT, Max ,  HARTNAGEL, Kristine ,  DENGLER, Joachim ,  HILLESHEIM, Nina Susanne

IPC: C09G1/02 ,  C09G1/04 ,  C09G1/00 ,  C09K3/14

CPC classification number: C09G1/02 ,  C09D5/027 ,  C09D7/65 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/31053

Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising abrasive particles containing ceria.

Abstract translation: 描述了包含含有二氧化铈的磨料颗粒的化学机械抛光（CMP）组合物。

公开(公告)号：WO2021028264A1

公开(公告)日：2021-02-18

申请号：PCT/EP2020/071890

申请日：2020-08-04

Applicant: BASF SE

Inventor： LAUTER, Michael ,  GUEVENC, Haci Osman ,  WEI, Te Yu ,  CHAO, Ching Hsun

IPC: C09G1/02 ,  H01L21/304 ,  H01L21/321

Abstract: The presently claimed invention relates to compositions and methods for inhibition of etching. The presently claimed invention particularly relates to a composition and methods for inhibition of tungsten etching.