Abstract:
An assembly 11 of a projection objective for microlithography comprises a number of optical elements and an aperture 14. The optical element of the assembly 11 before the last optical element oriented towards the image is a planar convex lens 12, whose convex surface 2b is oriented towards the object, and whose planar surface 2a is oriented towards the image. As a last optical element of the assembly 11 oriented towards the image, an optical terminal element 17 is provided which comprises a planar plate 19. Between the planar surface 2b of the lens 12 and the planar plate 19 of the optical terminal element 17, thus at the object oriented surface of the planar plate, and also on the image oriented surface of the planar plate of the terminal element 17 a respective immersion liquid 13b or 13a is provided. The planar plate is thus in contact with the immersion liquids 13a and 13b on both sides. By this configuration it is assured that contaminations within the immersion liquid 13a disposed on the image oriented side do not impair the planar convex lens 12. Replacing the terminal element 17 or the planar plate 19 of the terminal element 17, however, is easily possible, as soon as their imaging properties become insufficient through contamination or other impairments.
Abstract:
An assembly 11 of a projection objective for microlithography comprises a number of optical elements and an aperture 14. The optical element of the assembly 11 before the last optical element oriented towards the image is a planar convex lens 12, whose convex surface 2b is oriented towards the object, and whose planar surface 2a is oriented towards the image. As a last optical element of the assembly 11 oriented towards the image, an optical terminal element 17 is provided which comprises a planar plate 19. Between the planar surface 2b of the lens 12 and the planar plate 19 of the optical terminal element 17, thus at the object oriented surface of the planar plate, and also on the image oriented surface of the planar plate of the terminal element 17 a respective immersion liquid 13b or 13a is provided. The planar plate is thus in contact with the immersion liquids 13a and 13b on both sides. By this configuration it is assured that contaminations within the immersion liquid 13a disposed on the image oriented side do not impair the planar convex lens 12. Replacing the terminal element 17 or the planar plate 19 of the terminal element 17, however, is easily possible, as soon as their imaging properties become insufficient through contamination or other impairments.
Abstract:
The invention relates to a method -for improving the imaging properties of a micro lithography projection objective (50) , wherein the projection objective has a plurality of lenses (Ll, L2, L3 , L4 , L5 , L6, L7, L8) between an object plane and an image plane, a first lens of the plurality of lenses being assigned a first manipulator (ml, Mn) for actively deforming the lens, the first lens being deformed for at least partially correcting an aberration, at least one second lens of the plurality of lenses furthermore being assigned at least one second manipulator, and the second lens being deformed in addition to the first lens. Furthermore, a method is described for selecting at least one lens of a plurality of lenses of a projection objective as actively deformable element, and a projection objective.
Abstract:
A mirror (20) for EUV radiation (14) comprises a mirror body, which has at least one EUV radiation-reflecting region (23) and at least two EUV radiation-permeable regions (22). As a result, a spatial separation of the illumination and imaging beam paths is also possible with small angles of incidence and a large object-side numerical aperture.
Abstract:
The invention concerns an optical system of a microlithographic projection exposure apparatus. To permit comparatively flexible and fast influencing of intensity distribution and/or the polarization state, an optical system according to the invention comprises at least one layer system (120, 200) which is at least one-side bounded by a lens or a mirror, wherein said layer system (120, 200) is an interference layer system of several layers and has at least one liquid or gaseous layer portion (123, 220) whose maximum thickness is at a maximum 1 micrometer (μm), and a manipulator (105) for manipulation of the thickness profile of said layer portion (123, 220).
Abstract:
A method of manufacturing a projection objective including the steps of defining an initial design for a projection objective and optimizing the design using a merit function having a plurality of merit function components AB, IRRAD EFP, each of which reflects a particular quality parameter. One of that merit function components defines a maximum irradiance requirement requiring that a normalized effective irradiance value representing an effective irradiance AB, IRRAD EFF normalized to an effective irradiance in an image surface of the projection objective does not exceed a predefined irradiance threshold value IRR TV on each optical surface of the projection objective except for a last optical surface directly adjacent to an image surface of the projective objective. Optical surfaces positioned within caustic regions and/or critically small effective sub-apertures on optical surfaces are thereby systematically avoided.
Abstract translation:一种制造投影物镜的方法,包括以下步骤:定义投影物镜的初始设计,并使用具有多个优点函数分量AB,IRRAD EFP的优值函数优化设计,每个优点函数分量反映了特定的质量参数。 其中一个优点功能组件定义了最大辐照度要求,要求表示在投影物镜的图像表面中归一化为有效辐照度的有效辐照度AB,IRRAD EFF的归一化有效辐照度值不超过预定的辐照度阈值IRR TV 投影物镜的每个光学表面除了与投影物镜的图像表面直接相邻的最后光学表面之外。 因此系统地避免了位于苛性区域内的光学表面和/或光学表面上的临界小的有效子孔。
Abstract:
In general, in one aspect, the invention features a system that includes a mercury light source configured to emit radiation at multiple mercury emission lines, a projection objective positioned to receive radiation emitted by the mercury light source, and a stage configured to position a wafer relative to the projection objective. During operation, the projection objective directs radiation from the light source to the wafer, where the radiation at the wafer includes energy from more than one of the emission lines. Optical lens systems for use in the projection objective are disclosed.
Abstract:
A projection objective (100) of a microlithographic projection exposure apparatus, serving to project an image of a mask that can be set in position in an object plane (OP) onto a light-sensitive coating layer that can be set in position in an image plane (IP), wherein the projection objective is designed to operate in an immersion mode, produces at least one intermediate image (IMI) and comprises an optical subsystem (130) on the image-plane side which projects said intermediate image (IMI) into the image plane with an image-plane-side projection ratio β i , wherein said image-plane-side projection ration β i ,has an absolute value of at least 0.3.
Abstract:
Eine mikrolithographische Projektionsbelichtungsanlage enthält ein optisches Element (36), das zur Verringerung oder Erhöhung des Reflexionsvermögens eine Antireflex- Beschichtung (32) bzw. eine Reflex-Beschichtung trägt. Erfindungsgemäß ist die Antiref lex-Beschichtung derart ausgelegt, daß über einen Einfallswinkelbereich von 70° hinweg sich die Transmissionskoeffizienten der Antire- flex-Beschichtung für zueinander orthogonale Polarisationszustände (42p 42s) um nicht mehr als 10%, vorzugsweise um nicht mehr als 3%, weiter vorzugsweise um nicht mehr als 1%, voneinander unterscheiden. Entsprechendes gilt für den Reflexionskoeffizienten der Reflex-Beschichtung. Zu Korrektur von Fehlern, die durch größere Winkelabhängigkeiten des mittleren Transmissions- oder Ref lexionskoeffizienten und der Wirkung auf die Phase verursacht sind, enthält die Projektionsbelichtungsanlage Mittel (50) zur Homogenisierung einer Intensitätsverteilung, die vorzugsweise in oder in der Nähe einer Feld- oder Pupillenebene angeordnet sind.
Abstract:
In the case of a projection exposure method for exposing substrates, arranged in the region of an image plane of a projection objective, with at least one image of a pattern, arranged in the region of an object plane of the projection objective, of a mask, a first exposure configuration is optionally set for exposing a substrate given a first image-side numerical aperture NA1 in a first image field with a first image field size IFS1, or a second exposure configuration is optionally set for exposing substrates given a second image-side numerical aperture NA2, differing from the first image-side numerical aperture NA1, in a second image field with a second image field size IFS2 differing from the first image field size.