公开(公告)号：WO2009042415A2

公开(公告)日：2009-04-02

申请号：PCT/US2008/076027

申请日：2008-09-11

Applicant: MEMC ELECTRONIC MATERIALS, INC. ,  IBRAHIM, Jameel ,  REVANKAR, Vithal

Inventor： REVANKAR, Vithal

IPC: C01B33/08 ,  B01J21/08 ,  B01J21/04 ,  B01J21/06 ,  B01J23/10 ,  C01B33/107 ,  B01J23/08 ,  B01J23/26 ,  B01J23/28 ,  B01J23/34 ,  B01J23/50 ,  B01J23/72 ,  B01J23/75 ,  B01J35/10 ,  B01J37/02

CPC classification number: B01J37/349 ,  B01J21/066 ,  B01J23/8892 ,  B01J23/94 ,  C01B33/10784 ,  Y02C10/04 ,  Y02P20/584

Abstract: Processes for purifying silicon tetrafluoride source gas by subjecting the source gas to one or more purification processes including: contacting the silicon tetrafluoride source gas with an ion exchange resin to remove acidic contaminants, contacting the silicon tetrafluoride source gas with a catalyst to remove carbon monoxide, by removal of carbon dioxide by use of an absorption liquid, and by removal of inert compounds by cryogenic distillation; catalysts suitable for removal of carbon monoxide from silicon tetrafluoride source gas and processes for producing such catalysts.

Abstract translation: 用于通过使源气体进行一种或多种纯化方法来纯化四氟化硅源气体的方法，包括：使四氟化硅源气体与离子交换树脂接触以除去酸性污染物，使四氟化硅源气体与催化剂接触以除去一氧化碳， 通过使用吸收液除去二氧化碳，并通过低温蒸馏除去惰性化合物; 适用于从四氟化硅源气体中除去一氧化碳的催化剂及其制备方法。

公开(公告)号：WO2022147089A1

公开(公告)日：2022-07-07

申请号：PCT/US2021/065469

申请日：2021-12-29

Applicant: GLOBALWAFERS CO., LTD.

Inventor： ZARDONI, Marco ,  ZAGO, Giancarlo ,  AGOSTINI, Giorgio ,  HARINGER, Stephan ,  EOFF, James

IPC: C30B15/04 ,  C30B29/06

Abstract: Additive feed systems for feeding at least two different additives to silicon disposed within a crucible of an ingot puller apparatus are disclosed. The additive feed system may include first and second feed trays which are caused to vibrate to move first or second additive from a canister in which the additive is stored to another vessel in which the amount of first or second additive added to the vessel is sensed. The additive is discharged from the vessel into an additive feed tube through which the additive enters the crucible.

公开(公告)号：WO2022146711A1

公开(公告)日：2022-07-07

申请号：PCT/US2021/063866

申请日：2021-12-16

Applicant: GLOBALWAFERS CO., LTD.

Inventor： ALBRECHT, Peter Daniel ,  WU, Junnan

IPC: H01J37/20 ,  C23C14/48 ,  G01N19/02 ,  H01J37/317

Abstract: Systems for implanting semiconductor structures with ions are disclosed. The semiconductor structure is positioned on a heatsink 100 and ions are implanted through a front surface of the semiconductor structure to form a damage region in the semiconductor structure. A parameter related to the coefficient of friction of the heatsink 100 is measured; e.g. a slide angle is measured by a testing apparatus 300. The parameter is compared to a baseline range.

公开(公告)号：WO2022098811A1

公开(公告)日：2022-05-12

申请号：PCT/US2021/057973

申请日：2021-11-04

Applicant: GLOBALWAFERS CO., LTD.

Inventor： HARINGER, Stephan ,  ZARDONI, Marco ,  DIODA, Mauro ,  SREEDHARAMURTHY, Hariprasad

IPC: C30B15/00

Abstract: Crystal pulling systems having a fluid-cooled exhaust tube are disclosed. The fluid-cooled exhaust tube extends through the reactor housing and into the reaction chamber. In some embodiments, the exhaust tube extends through the bottom of the crystal puller housing and through a bottom heat shield within the ingot puller housing.

公开(公告)号：WO2021262993A1

公开(公告)日：2021-12-30

申请号：PCT/US2021/038918

申请日：2021-06-24

Applicant: GLOBALWAFERS CO., LTD.

Inventor： BHAGAVAT, Sumeet ,  LIU, Qingmin

IPC: H01L21/673 ,  H01L21/67309 ,  H01L21/6732

Abstract: A wafer boat for supporting a plurality of semiconductor wafers in a furnace is disclosed. The wafer boat includes a set of fingers each having a contact protuberance which contacts and supports a semiconducting wafer. The contact protuberances may be arranged in a rotationally symmetric pattern about the wafer boat.

公开(公告)号：WO2020131458A1

公开(公告)日：2020-06-25

申请号：PCT/US2019/065229

申请日：2019-12-09

Applicant: GLOBALWAFERS CO., LTD.

Inventor： LEE, HyungMin ,  RYU, JaeWoo ,  PHILLIPS, Richard ,  LEE, YoungJung ,  HUDSON, Carissima Marie

IPC: C30B15/20 ,  C30B29/06

Abstract: Methods for forming single crystal silicon ingots with improved resistivity control are disclosed. The methods involve growth of a sample rod. The sample rod may have a diameter less than the diameter of the product ingot. The sample rod is cropped to form a center slab. The resistivity of the center slab may be measured directly such as by a four-point probe. The sample rod may be annealed in a thermal donor kill cycle prior to measuring the resistivity.

公开(公告)号：WO2020055571A1

公开(公告)日：2020-03-19

申请号：PCT/US2019/047829

申请日：2019-08-23

Applicant: GLOBALWAFERS CO., LTD. ,  YOSHIMURA, Ichiro

Inventor： YOSHIMURA, Ichiro ,  CHU, Alex ,  CHIU, H.J. ,  BHAGAVAT, Sumeet ,  TAEHYEONG, Kim ,  KATAKURA, Norimasa ,  KITAZAWA, Masaru

IPC: B24B9/06 ,  B24B49/04 ,  B24B37/005 ,  B24B37/20 ,  B24B49/03

Abstract: Methods for polishing semiconductor substrates that involve adjusting the finish polishing sequence based on the pad-to-pad variance of the polishing pad are disclosed.

公开(公告)号：WO2020005901A1

公开(公告)日：2020-01-02

申请号：PCT/US2019/038923

申请日：2019-06-25

Applicant: GLOBALWAFERS CO., LTD.

Inventor： RYU, JaeWoo ,  PHILLIPS, Richard J. ,  STANDLEY, Robert ,  LEE, HyungMin ,  LEE, YoungJung ,  HUDSON, Carissima Marie

IPC: C30B15/20 ,  C30B29/06

Abstract: Methods for forming single crystal silicon ingots with improved resistivity control. The methods involve growth and resistivity measurement of a sample rod. The sample rod may have a diameter less than the diameter of the product ingot. The resistivity of the sample rod may be measured directly by contacting a resistivity probe with a planar segment formed on the sample rod. The sample rod may be annealed in a thermal donor kill cycle prior to measuring the resistivity.

公开(公告)号：WO2018125565A1

公开(公告)日：2018-07-05

申请号：PCT/US2017/066063

申请日：2017-12-13

Applicant: SUNEDISON SEMICONDUCTOR LIMITED

Inventor： LEE, Young Jung ,  RYU, Jae-Woo ,  KIM, Byung Chun ,  FALSTER, Robert J. ,  PARK, Soon Sung ,  KIM, Tae Hoon ,  JI, Jun Hwan ,  HUDSON, Carissima Marie

IPC: C30B29/06 ,  C30B33/00 ,  C30B33/02 ,  C30B33/08 ,  H01L21/00

Abstract: The disclosure is directed to a method to recover the gate oxide integrity yield of a silicon wafer after rapid thermal anneal in an ambient atmosphere comprising a nitrogen containing gas, such as NH 3 or N 2 . Generally, rapid thermal anneals in an ambient atmosphere comprising a nitrogen containing gas, such as NH 3 or N 2 to thereby imprint an oxygen precipitate profile can degrade the GOI yield of a silicon wafer by exposing as-grown crystal defects (oxygen precipitate) and vacancies generated by the silicon nitride film. The present invention restores GOI yield by stripping the silicon nitride layer, which is followed by wafer oxidation, which is followed by stripping the silicon oxide layer.

公开(公告)号：WO2018089404A1

公开(公告)日：2018-05-17

申请号：PCT/US2017/060505

申请日：2017-11-08

Applicant: MALLINCKRODT NUCLEAR MEDICINE LLC

Inventor： PIPES, David ,  UHLAND, William ,  PERRIGO, Melissa ,  OWENS, Mark

IPC: G21G1/10 ,  G21G1/00

Abstract: Processes for producing germanium-68 from a gallium target body are disclosed. In some embodiments, germanium-68 and gallium are precipitated to remove metal impurities. Germanium-68 and gallium are re-dissolved and loaded onto an ion exchange column to separate germanium-68 from gallium.

Abstract translation: 公开了从镓靶体产生锗-68的方法。 在一些实施例中，锗-68和镓被沉淀以去除金属杂质。 将锗-68和镓重新溶解并装载到离子交换柱上以从镓中分离锗-68。