Abstract:
A method of measuring a change in thickness of a layer of material disposed on a wafer while polishing the layer. Light is directed at the surface of the wafer from an optical sensor disposed within the polishing pad. The intensity of the reflected light is measured by a light detector also disposed in the polishing pad. The intensity of the reflected light varies sinusoidally with the change in layer thickness as the layer is removed. By measuring the absolute thickness of the layer at two or more points along the sinusoidal curve, the sinusoidal curve is calibrated so that a portion of the wavelength of the curve corresponds to a change in thickness of the layer.
Abstract:
The present invention provides an improved planarization apparatus for chemical mechanical planarization. In an exemplary embodiment, the invention provides an apparatus having a back support (118) operatively coupled to the edge support, the bac support having at least one surface for supporting a back side of the object during planarization. The surface for supporting the back side provides a substantially friction free interface between the surface and the back side of the object to allow the object to move across the surface of the back support. In some embodiments, an edge support (120) is movably coupled to an edge of an object for supporting and positioning the object during planarization.
Abstract:
The present invention provides an apparatus and method for protecting a work piece during surface processing. The apparatus employs a protective material (22) to protect a wafer during backside grinding. The apparatus can further include a vacuum chuck (14) that allows the passage of a vacuum signal, a frame (24) holding the protective material, a frame holder (26) to hold the frame, and a fastening arrangement to fasten the frame holder to the chuck adjacent a support surface. The method can include providing a vacuum chuck, placing a protective material in contact with the chuck, placing a wafer in contact with the protective material, applying a vacuum signal securing the wafer with the chuck, and grinding the backside surface of the wafer.
Abstract:
The present invention provides an improved planarization or polishing apparatus for chemical mechanical planarization and other types of polishing such as metal polishing and optical polishing. In an exemplary embodiment, an apparatus for polishing an object (115) comprises a pad (117) having a polishing surface to be placed on the target surface of the object (115) to be polished. A pad drive member (116) is connected to the pad to move the pad relative to the object to chenge a position of the polishing surface of the pad on the target surface of the object. A drive support (251) is movably coupled with the pad drive member (116) to support the pad drive member (116) for rotation relative to the drive support around a pivot point (252) which is disposed substantially on the target surface of the object (115) during polishing.
Abstract:
A method of relieving surface stress on a thin wafer (16) by removing a small portion of the wafer substrate, the substrate being removed by applying a solution of KOH to the wafer while the wafer spins.
Abstract:
The present invention provides an improved planarization or polishing apparatus for chemical mechanical planarization and other types of polishing such as metal polishing and optical polishing. In an exemplary embodiment, an apparatus for polishing an object (115) comprises a pad (117) having a polishing surface to be placed on the target surface of the object (115) to be polished. A pad drive member (116) is connected to the pad to move the pad relative to the object to chenge a position of the polishing surface of the pad on the target surface of the object. A drive support (251) is movably coupled with the pad drive member (116) to support the pad drive member (116) for rotation relative to the drive support around a pivot point (252) which is disposed substantially on the target surface of the object (115) during polishing.