Abstract:
A method of backgrinding wafers wherein backgrinding tape or a pad is applied to the chuck and not to the wafers. The backgrinding tape or pad is left on the chuck as each wafer is sequentially placed on the tape or pad, background, rinsed on the backside, removed from the tape and then cleaned on the front side and backside. A tool for applying tape to a chuck, as described herein, facilitates this method.
Abstract:
A method of backgrinding wafers wherein backgrinding tape or a pad is applied to the chuck and not to the wafers. The backgrinding tape or pad is left on the chuck as each wafer is sequentially placed on the tape or pad, background, rinsed on the backside, removed from the tape and then cleaned on the front side and backside. A tool for applying tape to a chuck, as described herein, facilitates this method.
Abstract:
Systems and methods are provided for use in processing and/or grinding wafers or other work products. Some embodiments provide a grinding apparatus that comprise a base casting; a rotary indexer configured to rotate within the base casting; a work spindle secured with the rotary indexer; a work chuck coupled with the first work spindle, wherein the first work spindle is configured to rotate the first work chuck; a bridge casting secured relative to the base casting, wherein the bridge casting bridges across at least a portion of the rotary indexer and is supported structurally forming a closed stiffness loop; a grind spindle secured with the bridge casting; and a grind wheel cooperated with the grind spindle, wherein the bridge casting secures the grind spindle.
Abstract:
A flexible membrane assembly for a wafer carrier in a CMP system. The flexible membrane assemble has a flat, flexible membrane joined to a rigid cylindrical sidewall.
Abstract:
A method of measuring a change in thickness of a layer of material disposed on a wafer while polishing the layer. Light is directed at the surface of the wafer from an optical sensor disposed within the polishing pad. The intensity of the reflected light is measured by a light detector also disposed in the polishing pad. The intensity of the reflected light varies sinusoidally with the change in layer thickness as the layer is removed. By measuring the absolute thickness of the layer at two or more points along the sinusoidal curve, the sinusoidal curve is calibrated so that a portion of the wavelength of the curve corresponds to a change in thickness of the layer.
Abstract:
Specific embodiments of the present invention provide a chemical-mechanical planarization apparatus for planarizing an object (115) comprising a shaft (260) having a shaft axis (270) and being connected with a polishing head (250) which is coupled to a polishing pad (117). The polishing pad (117) has a smaller diameter than the object (115) to be planarized. The shaft (260) is rotatable to spin the polishing head (250) and polishing pad (117) around the shaft axis (270). A channel (766) extends along the shaft axis through the shaft (260) and the polishing head (250). A supply tube (730) is configured to deliver a polishing chemical through the channel to the polishing pad. In some embodiments, the polishing pad is an annular pad (770) having an opening for flowing the polishing chemical therethrough to a region between the polishing pad and the object (9115). A sensor (774) is provided for monitoring a level of the polishing chemical in the channel of the shaft (766). A pump (760) is provided for pumping the polishing chemical through the supply tube to the channel of the shaft. The pump (760) is controlled to vary a flow rate of the polishing chemical to the channel of the shaft in response to the monitored level of the polishing chemical in the channel.
Abstract:
Specific embodiments of the present invention provide a chemical-mechanical planarization apparatus for planarizing an object comprising a shaft having a shaft axis and being connected with a polishing head which is coupled to a polishing pad. The polishing pad has a smaller diameter than the object to be planarized. The shaft is rotatable to spin the polishing head and polishing pad around the shaft axis. A channel extends along the shaft axis through the shaft and the polishing head. A supply tube is configured to deliver a polishing chemical through the channel to the polishing pad. In some embodiments, the polishing pas is an annular pad having an opening for flowing the polishing chemical therethrough to a region between the polishing pad and the object. A sensor is provided for monitoring a level of the polishing chemical in the channel of the shaft. A pump is provided for pumping the polishing chemical through the supply tube to the channel of the shaft. The pump is controlled to vary a flow rate of the polishing chemical to the channel of the shaft in response to the monitored level of the polishing chemical in the channel.
Abstract:
A robot calibration system and method for robots in semiconductor wafer processing systems is disclosed. The calibration system comprises a calibration array, a dummy wafer and a control system programmed with a calibration routine. The calibration array has a plurality of inductive proximity sensors to determine parallelism of the robot relative to a station and a center-locating sensor to determine the center of the station.
Abstract:
A system and method of measuring a change in thickness of a layer of material disposed on a wafer while polishing the layer. Light is directed at the surface of the wafer from an indwelling optical sensor, disposed within a polishing pad and data signals are wireless transmitted to a control system.
Abstract:
A wafer carrier with a back pressure applicator system adapted to provide high resolution back pressure control. A plurality of millimeter scale distensible elements (42, 43, 44, 45, 46) are disposed between the wafer carrier pressure plate (35) and a process wafer, and selectively distended to provide excess backpressure to select small areas of a wafer known to exhibit resistance to removal vis-à-vis the surrounding wafer surface. Distensible elements may be in the form of expandable pneumatic chambers or electro-mechanical elements such as solenoids, shape memory elements, electrostatic plates.