公开(公告)号：WO2018128995A1

公开(公告)日：2018-07-12

申请号：PCT/US2018/012103

申请日：2018-01-02

Applicant: KLA-TENCOR CORPORATION

Inventor： ZHAO, Guoheng ,  LEONG, Jenn-Kuen ,  KIRK, Michael

IPC: H01L21/66 ,  H01L21/67

Abstract: A inspection system includes an illumination source to generate an illumination beam, focusing elements to direct the illumination beam to a sample, a detector, collection elements configured to direct radiation emanating from the sample to the detector, a detection mode control device to image the sample in two or more detection modes such that the detector generates two or more collection signals based on the two or more detection modes, and a controller. Radiation emanating from the sample includes at least radiation specularly reflected by the sample and radiation scattered by the sample. The controller determines defect scattering characteristics associated with radiation scattered by defects on the sample based on the two or more collection signals. The controller also classifies the one or more particles according to a set of predetermined defect classifications based on the one or more defect scattering characteristics.

公开(公告)号：WO2018128984A1

公开(公告)日：2018-07-12

申请号：PCT/US2018/012070

申请日：2018-01-02

Applicant: KLA-TENCOR CORPORATION

Inventor： LUBASHEVSKY, Yuval ,  PASKOVER, Yuri ,  LEVINSKI, Vladimir ,  MANASSEN, Amnon

IPC: G01N21/47 ,  G01N21/88

Abstract: A method of monitoring overlay is used in a manufacturing process in which successive layers are deposited one over another to form a stack. Each layer may include a periodic structure such as a diffraction grating to be aligned with a periodic structure in another layer. The stacked periodic structures may be illuminated to form + and - first order diffraction patterns from the periodic structures. An image of the stacked periodic structures may be captured including + and - diffraction patterns. The + and - diffraction patterns may be compared to calculate the overlay between successive layers.

公开(公告)号：WO2018118663A2

公开(公告)日：2018-06-28

申请号：PCT/US2017/066517

申请日：2017-12-14

Applicant: KLA-TENCOR CORPORATION

Inventor： SMITH, Mark D. ,  FANG, Chao ,  DUFFY, Brian

IPC: H01L21/66

Abstract: A metrology system includes a controller communicatively coupled to a metrology tool. The controller may generate a three-dimensional model of a sample, generate a predicted metrology image corresponding to a predicted analysis of the sample with the metrology tool based on the three-dimensional model, evaluate two or more candidate metrology recipes for extracting the metrology measurement from the one or more predicted metrology images, select, based on one or more selection metrics, a metrology recipe from the two or more candidate metrology recipes for extracting a metrology measurement from an image of the structure from the metrology tool, receive an output metrology image of a fabricated structure from the metrology tool based on a metrology measurement of the fabricated structure, and extract the metrology measurement associated with the fabricated structure from the output metrology image based on the metrology recipe.

公开(公告)号：WO2018102596A3

公开(公告)日：2018-06-07

申请号：PCT/US2017/064040

申请日：2017-11-30

Applicant: KLA-TENCOR CORPORATION

Inventor： BHATTACHARYYA, Santosh ,  SHARMA, Devashish ,  MAHER, Christopher ,  HUA, Bo ,  MEASOR, Philip ,  DANEN, Robert

IPC: G01N21/95 ,  G01N21/88 ,  G01N21/01

Abstract: Methods and systems for discovery of defects of interest (DOI) buried within three dimensional semiconductor structures and recipe optimization are described herein. The volume of a semiconductor wafer subject to defect discovery and verification is reduced by storing images associated with a subset of the total depth of the semiconductor structures under measurement. Image patches associated with defect locations at one or more focus planes or focus ranges are recorded. The number of optical modes under consideration is reduced based on any of a comparison of one or more measured wafer level defect signatures and one or more expected wafer level defect signatures, measured defect signal to noise ratio, and defects verified without de-processing. Furthermore, verified defects and recorded images are employed to train a nuisance filter and optimize the measurement recipe. The trained nuisance filter is applied to defect images to select the optimal optical mode for production.

公开(公告)号：WO2018098192A1

公开(公告)日：2018-05-31

申请号：PCT/US2017/062871

申请日：2017-11-21

Applicant: KLA-TENCOR CORPORATION

Inventor： BRAUER, Bjorn

IPC: H01L21/66

Abstract: Noise reduction in a difference image of an optical inspection tool is provided by calculating a difference image across layers of a multi-layered wafer. A first wafer image of a first wafer layer and a second wafer image of a second wafer layer are used. The first wafer image and the second wafer image are at a same planar location on the multi-layered wafer, but of different layers and/or after different process steps. A first difference image is calculated between the first wafer image and the second wafer image to reduce wafer noise. Defects can be identified using the first difference image. A system with an image data acquisition subsystem can be used to perform this technique.

公开(公告)号：WO2018094358A1

公开(公告)日：2018-05-24

申请号：PCT/US2017/062622

申请日：2017-11-20

Applicant: KLA-TENCOR CORPORATION

Inventor： ORAM, David C. ,  MATHUR, Abhinav ,  WU, Kenong ,  SHIFRIN, Eugene

IPC: G01N21/95 ,  G01N21/01

CPC classification number: H01L22/12 ,  G01N21/8806 ,  G01N21/9501 ,  G01N2021/8825 ,  G01N2021/8848 ,  G01N2021/8883 ,  H01L21/67288 ,  H01L22/20

Abstract: A system, method, and non-transitory computer readable medium are provided for tuning sensitivities of, and determining a process window for, a modulated wafer. The sensitivities for dies of the modulated wafer are tuned dynamically based on a single set of parameters. Further, the process window is determined for the modulated wafer from prior determined parameter-specific nominal process windows.

公开(公告)号：WO2018089459A1

公开(公告)日：2018-05-17

申请号：PCT/US2017/060589

申请日：2017-11-08

Applicant: KLA-TENCOR CORPORATION

Inventor： BRAUER, Bjorn ,  BHATTACHARYYA, Santosh ,  SHIFRIN, Eugene ,  LEE, Hucheng ,  MURRAY, Benjamin ,  MATHEW, Ashok ,  BHASKAR, Chetana ,  GAO, Lisheng

IPC: G01N21/95 ,  G01N21/88

Abstract: Systems and methods for detecting defects on a reticle are provided. One system includes computer subsystem(s) that include one or more image processing components that acquire images generated by an inspection subsystem for a wafer, a main user interface component that provides information generated for the wafer and the reticle to a user and receives instructions from the user, and an interface component that provides an interface between the one or more image processing components and the main user interface. Unlike currently used systems, the one or more image processing components are configured for performing repeater defect detection by applying a repeater defect detection algorithm to the images acquired by the one or more image processing components, and the repeater defect detection algorithm is configured to detect defects on the wafer using a hot threshold and to identify the defects that are repeater defects.

Abstract translation: 提供了用于检测掩模版上的缺陷的系统和方法。 一个系统包括计算机子系统，该计算机子系统包括一个或多个图像处理部件，该图像处理部件采集由晶片的检查子系统产生的图像;主用户接口部件，向用户提供为晶片和标线器产生的信息， 用户以及提供一个或多个图像处理组件与主用户界面之间的接口的接口组件。 与当前使用的系统不同，一个或多个图像处理组件被配置用于通过将中继器缺陷检测算法应用于由一个或多个图像处理组件获取的图像来执行中继器缺陷检测，并且中继器缺陷检测算法被配置为检测缺陷 在晶片上使用热门阈值，并找出中继器缺陷的缺陷。

公开(公告)号：WO2018089190A1

公开(公告)日：2018-05-17

申请号：PCT/US2017/058121

申请日：2017-10-24

Applicant: KLA-TENCOR CORPORATION

Inventor： ITTAH, Naomi ,  GUTMAN, Nadav ,  AMIT, Eran ,  IMMER, Vincent ,  PELED, Einat

IPC: H01L21/66

Abstract: A method of overlay control in silicon wafer manufacturing comprises firstly locating a target comprising a diffraction grating on a wafer layer; and then measuring the alignment of patterns in successive layers of the wafer. The location of the target may be done by the pupil camera rather than a vision camera by scanning the target to obtain pupil images at different locations along a first axis. The pupil images may comprise a first order diffraction pattern for each location. A measurement of signal intensity in the first order diffraction pattern is then obtained for each location. The variation of signal intensity with location along each axis is then analyzed to calculate the location of a feature in the target.

Abstract translation: 在硅晶片制造中的覆盖控制的方法包括首先将包括衍射光栅的目标定位在晶片层上; 然后测量晶片连续层中图案的排列。 目标的位置可以由瞳孔相机而不是视觉相机通过扫描目标以获得沿着第一轴的不同位置处的瞳孔图像来完成。 瞳孔图像可以包括用于每个位置的一阶衍射图案。 然后针对每个位置获得一阶衍射图案中的信号强度的测量结果。 然后分析信号强度随每个轴的位置变化，以计算目标中的特征位置。

公开(公告)号：WO2018075999A1

公开(公告)日：2018-04-26

申请号：PCT/US2017/057770

申请日：2017-10-22

Applicant: KLA-TENCOR CORPORATION

Inventor： HENCH, John ,  GELLINEAU, Antonio ,  ARTEMIEV, Nikolay ,  DI REGOLO, Joseph A.

IPC: H01L21/66

Abstract: Methods and systems for calibrating the location of x-ray beam incidence onto a specimen in an x-ray scatterometry metrology system are described herein. The precise location of incidence of the illumination beam on the surface of the wafer is determined based on occlusion of the illumination beam by two or more occlusion elements. The center of the illumination beam is determined based on measured values of transmitted flux and a model of the interaction of the beam with each occlusion element. The position of the axis of rotation orienting a wafer over a range of angles of incidence is adjusted to align with the surface of wafer and intersect the illumination beam at the measurement location. A precise offset value between the normal angle of incidence of the illumination beam relative to the wafer surface and the zero angle of incidence as measured by the specimen positioning system is determined.

Abstract translation: 本文描述了用于在X射线散射测量计量系统中校准X射线束入射到样本上的位置的方法和系统。 照明光束在晶片表面上的入射的精确位置基于两个或更多个遮挡元件对照明光束的遮挡来确定。 照明光束的中心基于透射通量的测量值以及光束与每个遮挡元件的相互作用的模型来确定。 将晶片定向在一定入射角范围上的旋转轴的位置被调整为与晶片的表面对齐并且在照射光束在测量位置处相交。 确定照明光束相对于晶片表面的法向正入射角与由样本定位系统测量的零入射角之间的精确偏移值。

公开(公告)号：WO2018071710A3

公开(公告)日：2018-04-19

申请号：PCT/US2017/056400

申请日：2017-10-12

Applicant: KLA-TENCOR CORPORATION

Inventor： CHUANG, Yung-Ho Alex ,  FIELDEN, John ,  LIU, Xuefeng ,  XIAOLI, Yinying

IPC: H01J37/317 ,  H01J37/073 ,  H01J1/304

Abstract: A multi-column electron beam device includes an electron source comprising multiple field emitters fabricated on a surface of a silicon substrate. To prevent oxidation of the silicon, a thin, contiguous boron layer is disposed directly on the output surface of the field emitters. The field emitters can take various shapes including a pyramid, a cone, or a rounded whisker. Optional gate layers may be placed on the output surface near the field emitters. The field emitter may be p-type or n-type doped. Circuits may be incorporated into the wafer to control the emission current. A light source may be configured to illuminate the electron source and control the emission current. The multi-column electron beam device may be a multi-column electron beam lithography system configured to write a pattern on a sample.