公开(公告)号：WO2018209134A1

公开(公告)日：2018-11-15

申请号：PCT/US2018/032141

申请日：2018-05-10

Applicant: KLA-TENCOR CORPORATION

Inventor： BYKANOV, Alexander ,  ARTEMIEV, Nikolay ,  DI REGOLO, Joseph A. ,  GELLINEAU, Antonio ,  KUZNETSOV, Alexander ,  VELDMAN, Andrei ,  HENCH, John

IPC: G01N23/223 ,  G01N23/2204

Abstract: Methods and systems for positioning a specimen and characterizing an x-ray beam incident onto the specimen in a Transmission, Small-Angle X-ray Scatterometry (T-SAXS) metrology system are described herein. A specimen positioning system locates a wafer vertically and actively positions the wafer in six degrees of freedom with respect to the x-ray illumination beam without attenuating the transmitted radiation. In some embodiments, a cylindrically shaped occlusion element is scanned across the illumination beam while the detected intensity of the transmitted flux is measured to precisely locate the beam center. In some other embodiments, a periodic calibration target is employed to precisely locate the beam center. The periodic calibration target includes one or more spatially defined zones having different periodic structures that diffract X-ray illumination light into distinct, measurable diffraction patterns.

公开(公告)号：WO2018222613A1

公开(公告)日：2018-12-06

申请号：PCT/US2018/034935

申请日：2018-05-29

Applicant: KLA-TENCOR CORPORATION

Inventor： GELLINEAU, Antonio ,  DZIURA, Thaddeus, Gerard

IPC: G01N23/201 ,  G01B15/00 ,  H01L21/66

CPC classification number: H01L22/20 ,  G01N23/20083 ,  G01N2223/6116 ,  G03F7/70525 ,  G03F7/70616 ,  H01L21/67253 ,  H01L22/12

Abstract: Methods and systems for estimating values of process parameters, structural parameters, or both, based on x-ray scatterometry measurements of high aspect ratio semiconductor structures are presented herein. X-ray scatterometry measurements are performed at one or more steps of a fabrication process flow. The measurements are performed quickly and with sufficient accuracy to enable yield improvement of an on-going semiconductor fabrication process flow. Process corrections are determined based on the measured values of parameters of interest and the corrections are communicated to the process tool to change one or more process control parameters of the process tool. In some examples, measurements are performed while the wafer is being processed to control the on-going fabrication process step. In some examples, X-ray scatterometry measurements are performed after a particular process step and process control parameters are updated for processing of future devices.

公开(公告)号：WO2018075551A1

公开(公告)日：2018-04-26

申请号：PCT/US2017/057034

申请日：2017-10-17

Applicant: KLA-TENCOR CORPORATION

Inventor： GELLINEAU, Antonio ,  DZIURA, Thaddeus Gerard ,  HENCH, John ,  VELDMAN, Andrei ,  ZALUBOVSKY, Sergey

IPC: H01J37/252 ,  H01J37/04

Abstract: Methods and systems for characterizing dimensions and material properties of semiconductor devices by full beam x-ray scatterometry are described herein. A full beam x-ray scatterometry measurement involves illuminating a sample with an X-ray beam and detecting the intensities of the resulting zero diffraction order and higher diffraction orders simultaneously for one or more angles of incidence relative to the sample. The simultaneous measurement of the direct beam and the scattered orders enables high throughput measurements with improved accuracy. The full beam x-ray scatterometry system includes one or more photon counting detectors with high dynamic range and thick, highly absorptive crystal substrates that absorb the direct beam with minimal parasitic backscattering. In other aspects, model based measurements are performed based on the zero diffraction order beam, and measurement performance of the full beam x-ray scatterometry system is estimated and controlled based on properties of the measured zero order beam.

Abstract translation: 本文描述了用全光束x射线散射测量法表征半导体器件的尺寸和材料特性的方法和系统。 全束X射线散射测量包括用X射线束照射样品并同时检测相对于样品的一个或多个入射角的所得零衍射级和较高衍射级的强度。 直接光束和散射指令的同时测量可实现高通量测量并提高精度。 全光束x射线散射测量系统包括一个或多个具有高动态范围的光子计数检测器和厚度高，吸收性好的晶体衬底，能够以最小的寄生背向散射吸收直接光束。 在其他方面，基于模型的测量是基于零衍射阶光束来执行的，并且全光束x射线散射测量系统的测量性能是基于测量的零阶光束的特性来估计和控制的。

公开(公告)号：WO2019191335A1

公开(公告)日：2019-10-03

申请号：PCT/US2019/024437

申请日：2019-03-27

Applicant: KLA-TENCOR CORPORATION

Inventor： ARTEMIEV, Nikolay ,  GELLINEAU, Antonio ,  BYKANOV, Alexander ,  KUZNETSOV, Alexander

IPC: G01N23/201 ,  G01N23/205 ,  G01N23/207 ,  G01B15/02 ,  H01L21/67 ,  H01L21/68

Abstract: Multilayer targets enabling fast and accurate, absolute calibration and alignment of X-ray based measurement systems are described herein. The multilayer calibration targets have very high diffraction efficiency and are manufactured using fast, low cost production techniques. Each target includes a multilayer structure built up with pairs of X-ray transparent and X-ray absorbing materials. The layers of the multilayer target structure is oriented parallel to an incident X-ray beam. Measured diffraction patterns indicate misalignment in position and orientation between the incident X-Ray beam and the multilayer target. In another aspect, a composite multilayer target includes at least two multilayer structures arranged adjacent one another along a direction aligned with the incident X-ray beam, adjacent one another along a direction perpendicular to the incident X-ray beam, or a combination thereof. In some embodiments, the multilayer structures are spatially separated from one another by a gap distance.

公开(公告)号：WO2018075999A1

公开(公告)日：2018-04-26

申请号：PCT/US2017/057770

申请日：2017-10-22

Applicant: KLA-TENCOR CORPORATION

Inventor： HENCH, John ,  GELLINEAU, Antonio ,  ARTEMIEV, Nikolay ,  DI REGOLO, Joseph A.

IPC: H01L21/66

Abstract: Methods and systems for calibrating the location of x-ray beam incidence onto a specimen in an x-ray scatterometry metrology system are described herein. The precise location of incidence of the illumination beam on the surface of the wafer is determined based on occlusion of the illumination beam by two or more occlusion elements. The center of the illumination beam is determined based on measured values of transmitted flux and a model of the interaction of the beam with each occlusion element. The position of the axis of rotation orienting a wafer over a range of angles of incidence is adjusted to align with the surface of wafer and intersect the illumination beam at the measurement location. A precise offset value between the normal angle of incidence of the illumination beam relative to the wafer surface and the zero angle of incidence as measured by the specimen positioning system is determined.

Abstract translation: 本文描述了用于在X射线散射测量计量系统中校准X射线束入射到样本上的位置的方法和系统。 照明光束在晶片表面上的入射的精确位置基于两个或更多个遮挡元件对照明光束的遮挡来确定。 照明光束的中心基于透射通量的测量值以及光束与每个遮挡元件的相互作用的模型来确定。 将晶片定向在一定入射角范围上的旋转轴的位置被调整为与晶片的表面对齐并且在照射光束在测量位置处相交。 确定照明光束相对于晶片表面的法向正入射角与由样本定位系统测量的零入射角之间的精确偏移值。

公开(公告)号：WO2019183011A1

公开(公告)日：2019-09-26

申请号：PCT/US2019/022839

申请日：2019-03-19

Applicant: KLA-TENCOR CORPORATION

Inventor： GELLINEAU, Antonio

IPC: H01L21/67 ,  H01L21/66 ,  H01L21/027 ,  G03F7/20

Abstract: Methods and systems for improving a measurement recipe describing a sequence of measurements employed to characterize semiconductor structures are described herein. A measurement recipe is repeatedly updated before a queue of measurements defined by the previous measurement recipe is fully executed. In some examples, an improved measurement recipe identifies a minimum set of measurement options that increases wafer throughput while meeting measurement uncertainty requirements. In some examples, measurement recipe optimization is controlled to trade off measurement robustness and measurement time. This enables flexibility in the case of outliers and process excursions. In some examples, measurement recipe optimisation is controlled to minimize any combination of measurement uncertainty, measurement time, move time, and target dose. In. some examples, a measurement recipe is updated while measurement data is being collected. In some examples, a measurement recipe is updated at a site while data is collected at another site.

公开(公告)号：WO2019036512A1

公开(公告)日：2019-02-21

申请号：PCT/US2018/046771

申请日：2018-08-14

Applicant: KLA-TENCOR CORPORATION

Inventor： HENCH, John ,  GELLINEAU, Antonio ,  KUZNETSOV, Alexander

IPC: H01L21/66 ,  G01T1/29 ,  G01T1/02

Abstract: Methods and systems for more efficient X-Ray scatterometry measurements of on-device structures are presented herein. X-Ray scatterometry measurements of one or more structures over a measurement area includes a decomposition of the one or more structures into a plurality of sub-structures, a decomposition of the measurement area into a plurality of sub-areas, or both. The decomposed structures, measurement areas, or both, are independently simulated. The scattering contributions of each of the independently simulated decomposed structures are combined to simulate the actual scattering of the measured structures within the measurement area. In a further aspect, measured intensities and modelled intensities including one or more incidental structures are employed to perform measurement of structures of interest. In other further aspects, measurement decomposition is employed to train a measurement model and to optimize a measurement recipe for a particular measurement application.

公开(公告)号：WO2018191714A1

公开(公告)日：2018-10-18

申请号：PCT/US2018/027648

申请日：2018-04-13

Applicant: KLA-TENCOR CORPORATION

Inventor： SHCHEGROV, Andrei ,  GELLINEAU, Antonio ,  ZALUBOVSKY, Sergey

IPC: G01N23/201 ,  G01N23/207

Abstract: Methods and systems for characterizing dimensions and material properties of semiconductor devices by transmission small angle x-ray scatterometry (TSAXS) systems having relatively small tool footprint are described herein. The methods and systems described herein enable Q space resolution adequate for metrology of semiconductor structures with reduced optical path length. In general, the x-ray beam is focused closer to the wafer surface for relatively small targets and closer to the detector for relatively large targets. In some embodiments, a high resolution detector with small point spread function (PSF) is employed to mitigate detector PSF limits on achievable Q resolution. In some embodiments, the detector locates an incident photon with sub-pixel accuracy by determining the centroid of a cloud of electrons stimulated by the photon conversion event. In some embodiments, the detector resolves one or more x-ray photon energies in addition to location of incidence.

公开(公告)号：WO2017100424A1

公开(公告)日：2017-06-15

申请号：PCT/US2016/065571

申请日：2016-12-08

Applicant: KLA-TENCOR CORPORATION

Inventor： GELLINEAU, Antonio ,  KUZNETSOV, Alexander ,  HENCH, John

IPC: G01N21/21 ,  G01N21/01

CPC classification number: G01N21/211 ,  G01B11/0641 ,  G01B2210/56 ,  G01N2021/213

Abstract: A system, method and computer program product are provided for selecting signals to be measured utilizing a metrology tool that optimizes the precision of the measurement. The technique includes the steps of simulating a set of signals for measuring one or more parameters of a metrology target. A normalized Jacobian matrix corresponding to the set of signals is generated, a subset of signals in the simulated set of signals is selected that optimizes a performance metric associated with measuring the one or more parameters of the metrology target based on the normalized Jacobian matrix, and a metrology tool is utilized to collect a measurement for each signal in the subset of signals for the metrology target. For a given number of signals collected by the metrology tool, this technique optimizes the precision of such measurements over conventional techniques that collect signals uniformly distributed over a range of process parameters.

Abstract translation: 提供了一种系统，方法和计算机程序产品，用于利用优化测量精度的度量工具来选择待测量的信号。 该技术包括模拟用于测量度量目标的一个或多个参数的一组信号的步骤。 生成对应于该组信号的归一化雅可比矩阵，选择模拟信号组中的信号的子集，其基于归一化雅可比矩阵优化与测量度量衡目标的一个或多个参数相关联的性能度量，以及 利用度量工具来收集测量目标的信号子集中的每个信号的测量结果。 对于测量工具收集的给定数量的信号，该技术优化了这种测量的精度，而传统技术则收集均匀分布在一系列过程参数上的信号。