公开(公告)号：WO2021194822A1

公开(公告)日：2021-09-30

申请号：PCT/US2021/022729

申请日：2021-03-17

Applicant: APPLIED MATERIALS, INC.

Inventor： BALUJA, Sanjeev ,  ULAVI, Tejas ,  AGARWAL, Ashutosh

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/44 ,  C23C16/4412 ,  C23C16/4581 ,  C23C16/4587 ,  C23C16/52

Abstract: Apparatus and methods for providing backside pressure control and edge purge gas to a substrate in a processing chamber. A support region of a substrate support is defined by an outer band. The support region comprises one or more openings in the top surface of the substrate support. The outer band comprises a plurality of spaced apart posts. Processing chambers, methods of processing a substrate and non-transitory computer-readable medium containing instructions to process a substrate are also disclosed.

公开(公告)号：WO2021067705A2

公开(公告)日：2021-04-08

申请号：PCT/US2020/053954

申请日：2020-10-02

Applicant: APPLIED MATERIALS, INC.

Inventor： GRIFFIN, Kevin ,  SUN, Guangwei

IPC: C23C16/455 ,  H01J37/32 ,  H01L21/67 ,  H01L21/687 ,  C23C16/45565 ,  C23C16/4584

Abstract: Apparatus and methods for processing substrates using a gas injector unit with a quartz plate are provided. The gas injector unit comprises an injector body with a first opening extending through the injector body. The first opening has a nut portion and a clamp portion. A nut is positioned within the nut portion spaced from the injector body by a spring. A clamp is positioned within the clamp portion, which may be remotely located on a hub for connection with the injector body. A screw extends through the opening in the clamp, a portion of the injector body, the spring and into a connection portion of the nut. Gas distribution assemblies and processing chambers incorporating the gas injector unit are also described.

公开(公告)号：WO2021055990A1

公开(公告)日：2021-03-25

申请号：PCT/US2020/051967

申请日：2020-09-22

Applicant: APPLIED MATERIALS, INC.

Inventor： MUSTAFA, Muhannad ,  RASHEED, Muhammad M. ,  SANCHEZ, Mario D. ,  CUI, Anqing

IPC: C23C16/44 ,  C23C16/455

Abstract: Process chamber lids having a pumping liner with a showerhead and gas funnel within an open central region are described. The showerhead is spaced a distance from the gas funnel to form a gap and the gas funnel has an opening to provide a flow of gas into the gap. The gas funnel includes a plurality of apertures extending from the front surface to a common region adjacent the back surface of the gas funnel. A purge ring is in contact with the back surface of the gas funnel and aligned so that a circular channel formed in the bottom surface of the purge ring body is positioned adjacent the common area of the apertures in the gas funnel.

公开(公告)号：WO2021055763A1

公开(公告)日：2021-03-25

申请号：PCT/US2020/051511

申请日：2020-09-18

Applicant: APPLIED MATERIALS, INC.

Inventor： ULAVI, Tejas ,  DAN, Arkaprava ,  BALUJA, Sanjeev ,  TANG, Wei V.

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/687

Abstract: Substrate supports, substrate support assemblies and methods of using an arc generated between a first electrode and a second electrode to clean a support surface. The first electrode comprises a plurality of first branches which are interdigitated with a plurality of branches of the second electrode in a finger-joint like pattern creating a gap between the first electrode and the second electrode.

公开(公告)号：WO2020168021A1

公开(公告)日：2020-08-20

申请号：PCT/US2020/018021

申请日：2020-02-13

Applicant: APPLIED MATERIALS, INC.

Inventor： RICE, Michael ,  BALUJA, Sanjeev ,  AUBUCHON, Joseph ,  PONNEKANTI, Hari ,  SILVETTI, Mario D. ,  GRIFFIN, Kevin

IPC: C23C16/44 ,  C23C16/54

Abstract: Exhaust systems for handling multiple effluent streams are described. Some embodiments include pressure drops to prevent perturbations from one effluent source from affecting a second effluent source. Some embodiments incorporate an exhaust assembly with multiple inlets and pumps and a single outlet. The exhaust assembly includes shared auxiliary components like purge and cooling systems.

公开(公告)号：WO2020047375A1

公开(公告)日：2020-03-05

申请号：PCT/US2019/048995

申请日：2019-08-30

Applicant: APPLIED MATERIALS, INC.

Inventor： ULAVI, Tejas ,  KASHYAP, Dhritiman Subha ,  BALUJA, Sanjeev

IPC: H01L21/67 ,  H01L21/324

Abstract: A thermal management system comprising a fluid channel with a plurality of parallel first flow paths extending along a first level in a first thermal mass and a plurality of parallel second flow paths extending along a second level in a second thermal mass are described. Methods for controlling the temperature of a substrate or heater surface and fluid manifolds are also described.

公开(公告)号：WO2020023854A1

公开(公告)日：2020-01-30

申请号：PCT/US2019/043626

申请日：2019-07-26

Applicant: APPLIED MATERIALS, INC.

Inventor： LEE, Jared ,  BALUJA, Sanjeev ,  AUBUCHON, Joseph ,  KASHYAP, Dhritiman Subha ,  RICE, Michael

IPC: C23C16/455

Abstract: Apparatus and methods for providing high velocity gas flow showerheads for deposition chambers are described. The showerhead has a faceplate in contact with a backing plate that has a concave portion to provide a plenum between the backing plate and the faceplate. A plurality of thermal elements is within the concave portion of the backing plate and extends to contact the faceplate.

公开(公告)号：WO2020010299A1

公开(公告)日：2020-01-09

申请号：PCT/US2019/040677

申请日：2019-07-05

Applicant: APPLIED MATERIALS, INC.

Inventor： COLOMBEAU, Benjamin ,  MANDREKAR, Tushar ,  LIU, Patricia M. ,  PARIKH, Suketu Arun ,  BAUER, Matthias ,  KIOUSSIS, Dimitri R. ,  NATARAJAN, Sanjay ,  DUBE, Abhishek

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/8238 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/677 ,  H01L21/67

Abstract: A finFET device includes a doped source and/or drain extension that is disposed between a gate spacer of the finFET and a bulk semiconductor portion of the semiconductor substrate on which the n-doped or p-doped source or drain extension is disposed. The doped source or drain extension is formed by a selective epitaxial growth (SEG) process in a cavity formed proximate the gate spacer. After formation of the cavity, advanced processing controls (APC) (i.e., integrated metrology) is used to determine the distance of recess, without exposing the substrate to an oxidizing environment. The isotropic etch process, the metrology, and selective epitaxial growth may be performed in the same platform.

公开(公告)号：WO2019246038A1

公开(公告)日：2019-12-26

申请号：PCT/US2019/037652

申请日：2019-06-18

Applicant: APPLIED MATERIALS, INC.

Inventor： DOERING, Kenneth Brian ,  SILVETTI, Mario D. ,  GRIFFIN, Kevin

IPC: H01L21/67 ,  H01L21/02 ,  C23C16/455

Abstract: Gas injector inserts having a wedge-shaped housing, at least one first slot and at least one second slot are described. The housing has a first opening in the back face that is in fluid communication with the first slot in the front face and a second opening in the back face that is in fluid communication with the second slot in the front face. Each of the first slot and the second slot has an elongate axis that extends from the inner peripheral end to the outer peripheral end of the housing. The gas injector insert is configured to provide a flow of gas through the first slots at supersonic velocity. Gas distribution assemblies and processing chambers including the gas injector inserts are described.

公开(公告)号：WO2019055759A1

公开(公告)日：2019-03-21

申请号：PCT/US2018/051035

申请日：2018-09-14

Applicant: APPLIED MATERIALS, INC.

Inventor： ROY, Susmit Singha ,  GANDIKOTA, Srinivas ,  MALLICK, Abhijit Basu ,  MULLICK, Amrita B.

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/027

Abstract: Methods of producing a self-aligned structure are described. The methods comprise forming a metal-containing film in a substrate feature and silicidizing the metal-containing film to form a self-aligned structure comprising metal silicide. In some embodiments, the rate of formation of the self-aligned structure is controlled. In some embodiments, the amount of volumetric expansion of the metal-containing film to form the self-aligned structure is controlled. Methods of forming self-aligned vias are also described.