公开(公告)号：WO2021072200A1

公开(公告)日：2021-04-15

申请号：PCT/US2020/054995

申请日：2020-10-09

Applicant: APPLIED MATERIALS, INC.

Inventor： ULAVI, Tejas ,  PARKHE, Vijay D. ,  NAGARAJA, Naveen Kumar ,  BALUJA, Sanjeev ,  KUMAR, Surajit ,  KASHYAP, Dhritiman Subha ,  AGARWAL, Ashutosh

IPC: H01L21/687 ,  H01L21/67 ,  H01L21/683 ,  C23C16/455 ,  C23C16/458 ,  H05B3/20 ,  H05B3/00

Abstract: Substrate supports comprising a plurality of bonded plates forming a single component support body and methods of forming the substrate supports are described. The single component support body has an outer peripheral edge, a top surface and a bottom surface. A pocket is formed in the top surface and has a bottom surface, a depth and an outer peripheral edge. A purge ring is spaced a distance from the outer peripheral edge and comprises at least one opening in the top surface in fluid communication with a purge gas line within the body thickness.

公开(公告)号：WO2022086927A1

公开(公告)日：2022-04-28

申请号：PCT/US2021/055557

申请日：2021-10-19

Applicant: APPLIED MATERIALS, INC.

Inventor： LEE, Jared Ahmad ,  BALUJA, Sanjeev ,  AUBUCHON, Joseph ,  DOERING, Kenneth Brian ,  KASHYAP, Dhritiman Subha ,  SHAH, Kartik

IPC: C23C16/455 ,  C23C16/44

Abstract: Gas distribution assemblies and methods for providing a flow of gases to a process station are described. The gas distribution assemblies comprise a pumping liner with a showerhead and a gas funnel positioned therein. The pumping liner has an inner wall that slants at a first angle relative to a central axis of the gas distribution assembly so that the inner wall adjacent the bottom wall of the pumping liner is closer to the central axis than the inner wall adjacent the top wall. The gas funnel and pumping liner form a plenum between the outer wall of the gas funnel, a cavity in the bottom wall of the gas funnel and the inner wall of the pumping liner.

公开(公告)号：WO2020069302A1

公开(公告)日：2020-04-02

申请号：PCT/US2019/053430

申请日：2019-09-27

Applicant: APPLIED MATERIALS, INC.

Inventor： KASHYAP, Dhritiman Subha ,  KRISHNA, Gopu ,  BALUJA, Sanjeev ,  RICE, Michael

IPC: H01L21/67

Abstract: Multi-station process chamber lids comprising a plurality of station openings are described. A station separation purge channel is around the station openings. A plurality of angular purge channels separate station openings from adjacent station openings. A lid support beam can compensate for deflection of the chamber lid body.

公开(公告)号：WO2022216773A1

公开(公告)日：2022-10-13

申请号：PCT/US2022/023591

申请日：2022-04-06

Applicant: APPLIED MATERIALS, INC.

Inventor： KASHYAP, Dhritiman Subha ,  WANG, Chaowei ,  SHAH, Kartik ,  GRIFFIN, Kevin ,  RAMANATHAN, Karthik ,  CHEN, Hanhong ,  AUBUCHON, Joseph ,  BALUJA, Sanjeev

IPC: C23C16/52 ,  C23C16/455 ,  G06N20/00

Abstract: Methods, software systems and processes to develop surrogate model-based optimizers for controlling and optimizing flow and pressure of purges between a showerhead and a heater having a substrate support to control non-uniformity inherent in a processing chamber due to geometric configuration and process regimes. The flow optimizer process utilizes experimental data from optimal process space coverage models, generated simulation data and statistical machine learning tools (i.e. regression models and global optimizers) to predict optimal flow rates for any user-specified process regime.

公开(公告)号：WO2021072199A1

公开(公告)日：2021-04-15

申请号：PCT/US2020/054994

申请日：2020-10-09

Applicant: APPLIED MATERIALS, INC.

Inventor： ULAVI, Tejas ,  BALUJA, Sanjeev ,  KASHYAP, Dhritiman Subha

IPC: H01L21/67 ,  H05B1/02 ,  H05B3/68 ,  H05B3/28 ,  H01L21/687 ,  H01L21/683

Abstract: Substrate supports comprising a top plate positioned on a shaft are described. The top plate including a primary heating element a first depth from the surface of the top plate, a inner zone heating element a second depth from the surface of the top plate and an outer zone heating element a third depth from the surface of the top plate. Substrate support assemblies comprising a plurality of substrate supports and methods of processing a substrate are also disclosed.

公开(公告)号：WO2015183483A1

公开(公告)日：2015-12-03

申请号：PCT/US2015/029195

申请日：2015-05-05

Applicant: APPLIED MATERIALS, INC.

Inventor： YUAN, Xiaoxiong ,  SHAH, Kartik ,  KASHYAP, Dhritiman Subha ,  KELKAR, Umesh M. ,  WU, Dien-Yeh ,  RASHEED, Muhammad M.

IPC: C23C16/455

CPC classification number: C23C16/45544 ,  C23C16/08 ,  C23C16/34 ,  C23C16/45502 ,  C23C16/458

Abstract: Embodiments of methods and apparatus for improving gas flow in a substrate processing chamber are provided herein. In some embodiments, a substrate processing chamber includes: a chamber body and a chamber lid defining an interior volume; a substrate support disposed within the interior volume and having a support surface to support a substrate; a gas passageway disposed in the lid opposite the substrate support to supply a gas mixture to the interior volume, the gas passageway including a first portion and a second portion; a first gas inlet disposed in the first portion to supply a first gas to the first portion of the gas passageway; and a second gas inlet disposed in the second portion to supply a second gas to the second portion.

Abstract translation: 本文提供了用于改善衬底处理室中的气体流动的方法和装置的实施例。 在一些实施例中，衬底处理室包括：室主体和限定内部容积的室盖; 衬底支撑件，其设置在所述内部容积内并具有用于支撑衬底的支撑表面; 气体通道，设置在与基板支撑件相对的盖中，以将气体混合物供应到内部空间，气体通道包括第一部分和第二部分; 设置在第一部分中以将第一气体供应到气体通道的第一部分的第一气体入口; 以及设置在所述第二部分中以将第二气体供应到所述第二部分的第二气体入口。

公开(公告)号：WO2022204482A1

公开(公告)日：2022-09-29

申请号：PCT/US2022/021891

申请日：2022-03-25

Applicant: APPLIED MATERIALS, INC.

Inventor： KASHYAP, Dhritiman Subha ,  SHEREKAR, Amit Rajendra ,  SHAH, Kartik ,  AGARWAL, Ashutosh ,  HOFFMANN, Eric J. ,  BALUJA, Sanjeev ,  PARKHE, Vijay D.

IPC: H01L21/67 ,  H01L21/687 ,  C23C16/458

Abstract: A heater assembly having a backside purge gap formed between a top plate and a heater of the heater assembly, the top plate having a top plate wall. The top plate wall having an upper portion, a middle portion and a lower portion, the middle portion forming an incline relative to the top portion.

公开(公告)号：WO2020242829A1

公开(公告)日：2020-12-03

申请号：PCT/US2020/033621

申请日：2020-05-19

Applicant: APPLIED MATERIALS, INC.

Inventor： AGARWAL, Ashutosh ,  BALUJA, Sanjeev ,  KASHYAP, Dhritiman Subha ,  SHAH, Kartik ,  XIA, Yanjun

IPC: C23C16/455 ,  C23C16/505

Abstract: Provided are gas distribution apparatus with a showerhead having a front plate and a back plate spaced to form a gas volume, the front plate having an inner surface adjacent the gas volume and an outer surface with a plurality of apertures extending therethrough, the gas volume having a center region and an outer region; a first inlet in fluid communication with the center region of the gas volume, the inlet having an inside and an outside; and a mixer disposed on the inside of the inlet to increase gas flow temperature. Also provided are processing chamber apparatus and methods of depositing a film.

公开(公告)号：WO2020092046A1

公开(公告)日：2020-05-07

申请号：PCT/US2019/057324

申请日：2019-10-22

Applicant: APPLIED MATERIALS, INC.

Inventor： AUBUCHON, Joseph ,  BALUJA, Sanjeev ,  KASHYAP, Dhritiman Subha ,  LEE, Jared Ahmad ,  ULAVI, Tejas ,  RICE, Michael

IPC: H01L21/02 ,  H01L21/324 ,  C23C16/455 ,  H01L21/67 ,  H01J37/32 ,  H05H1/46

Abstract: Apparatus and methods to process one or more wafers are described. A processing chamber comprises a first processing station comprising a first gas injector having a first face, a first emissivity and a first temperature, a second processing station comprising a second gas injector having a second face, a second emissivity and a second temperature, and a substrate support assembly comprising a plurality of substantially coplanar support surfaces, the substrate support assembly configured to move the support surfaces between the first processing station and the second processing station. When a wafer is on the support surfaces, a temperature skew of less than about 0.5 °C is developed upon moving the wafer between the stations in about 0.5 seconds.

公开(公告)号：WO2020047375A1

公开(公告)日：2020-03-05

申请号：PCT/US2019/048995

申请日：2019-08-30

Applicant: APPLIED MATERIALS, INC.

Inventor： ULAVI, Tejas ,  KASHYAP, Dhritiman Subha ,  BALUJA, Sanjeev

IPC: H01L21/67 ,  H01L21/324

Abstract: A thermal management system comprising a fluid channel with a plurality of parallel first flow paths extending along a first level in a first thermal mass and a plurality of parallel second flow paths extending along a second level in a second thermal mass are described. Methods for controlling the temperature of a substrate or heater surface and fluid manifolds are also described.