公开(公告)号：WO2005010360A2

公开(公告)日：2005-02-03

申请号：PCT/US2004/023962

申请日：2004-07-22

申请人： VEECO INSTRUMENTS, INC. ,  SIEGFRIED, Daniel, E. ,  BURTNER, David, Matthew ,  TOWNSEND, Scott, A.

发明人： SIEGFRIED, Daniel, E. ,  BURTNER, David, Matthew ,  TOWNSEND, Scott, A.

IPC分类号： F03H

CPC分类号： H01J27/143 ,  H01J27/022 ,  H01J2237/08

摘要： A modular ion source design relies on relatively short modular anode layer source (ALS) components, which can be coupled together to form a longer ALS. For long ion sources, these shorter modular components allow for easier manufacturing and further result in a final assembly having better precision (e.g., a uniform gap dimensions along the longitudinal axis of the ion source). Modular components may be designed to have common characteristics so as to allow use of these components in ion sources of varying sizes. A modular gas distribution system uniformly distributes a working gas to the ionization region of the module ion source. For each gas distribution module, gas distribution channels and baffles are laid out relative to the module joints to prevent gas leakage. Furthermore, gas manifolds and supply channels are used to bridge module joints while uniformly distributing the working gas to the ALS.

摘要翻译： 模块化离子源设计依赖于相对短的模块化阳极层源（ALS）组件，其可以耦合在一起以形成更长的ALS。 对于长离子源，这些较短的模块化部件允许更容易的制造，并且进一步导致最终组装具有更好的精度（例如，沿离子源的纵向轴线的均匀间隙尺寸）。 模块化部件可以设计成具有共同的特性，以便允许在不同尺寸的离子源中使用这些部件。 模块化气体分配系统将工作气体均匀分布到模块离子源的电离区域。 对于每个气体分配模块，气体分配通道和挡板相对于模块接头布置，以防止气体泄漏。 此外，气体歧管和供应通道用于桥接模块接头，同时将工作气体均匀分布到ALS。

公开(公告)号：WO1998020513A1

公开(公告)日：1998-05-14

申请号：PCT/US1997019092

申请日：1997-10-22

申请人： VEECO INSTRUMENTS, INC.

发明人： VEECO INSTRUMENTS, INC. ,  DRUZ, Boris, L. ,  HAYES, Alan, V. ,  KANAROV, Victor ,  DiSTEFANO, Salvatore, A. ,  LAKIOS, Emmanuel, N.

IPC分类号： H01J27/16

CPC分类号： H01J27/16

摘要： A charged particle source (100) applicable for etching, thin film deposition, or surface modification including a conductive electrode (129) for controlling the plasma potential and beam voltage, the electrode (129) retaining long term conductivity during operation, such as by shielding or in situ cleaning during operation, and/or by being operated in pulse mode conditions capable of preventing charge accumulation in the source during ion extraction.

摘要翻译： 一种适用于蚀刻，薄膜沉积或表面改性的带电粒子源（100），包括用于控制等离子体电位和束电压的导电电极（129），在操作期间保持长期导电性的电极（例如屏蔽 或在操作期间进行原位清洁，和/或通过在脉冲模式条件下操作，能够在离子提取期间防止源中的电荷累积。

公开(公告)号：WO1990011487A1

公开(公告)日：1990-10-04

申请号：PCT/US1990001423

申请日：1990-03-16

申请人： VEECO INSTRUMENTS, INC.

发明人： VEECO INSTRUMENTS, INC. ,  YOUNG, James, M. ,  GREENBERG, Jeffrey, S. ,  ROBINSON, Jay, E. ,  COHEN, Daniel, A.

IPC分类号： G01B09/02

CPC分类号： G01B11/0675 ,  G01B11/0608

摘要： An optical non-contact surface profiler (10) for determining (i) the surface profile of a transparent layer (F) on a light-absorbing or opaque substrate (W), (ii) the surface profile of a light-absorbing or opaque substrate (W) through a transparent layer, and (iii) the thickness profile of a transparent layer (F) on a light-absorbing or opaque surface (W). A microscope alternatively configured in interferometric mode and in spectrophotometric mode provides phase data from an interference pattern and reflectance data from a reflectance pattern, respectively. A photo-sensing device (28) receives the interference patterns and reflectance patterns and inputs the corresponding phase data and reflectance data to a computing device (32). The computing device (32) processes the data to determine the appropriate surface or film thickness profiles.

公开(公告)号：WO1982002979A1

公开(公告)日：1982-09-02

申请号：PCT/US1981000595

申请日：1981-04-30

申请人： VEECO INSTRUMENTS INC

发明人： VEECO INSTRUMENTS INC ,  WESTERBERG EUGENE R ,  CONE DONALD R

IPC分类号： H01J29/46

CPC分类号： H01L21/30608 ,  H01J9/02 ,  H01J37/3177 ,  H01J2237/0453 ,  H01J2237/1205

摘要： Method of fabricating aperture and lens array plates (100, 200) in silicon using photo or electron beam lithographic patterning followed by indiffusion of boron and anisotropic silicon etching and assembling to form screen lenses. In one embodiment, a screen lens is formed of one each aperture and lens plate (100, 200), mounted back-to-back. In another embodiment, a screen lens is formed of a single lens (or aperture) plate (400).

摘要翻译： 使用光电子束光刻图案化，然后硼的扩散和各向异性硅蚀刻和组装以形成屏幕透镜在硅中制造孔径和透镜阵列板（100,200）的方法。 在一个实施例中，屏幕透镜由背对背安装的每个孔和透镜板（100,200）形成。 在另一个实施例中，屏幕透镜由单个透镜（或孔）板（400）形成。

公开(公告)号：WO2021077100A1

公开(公告)日：2021-04-22

申请号：PCT/US2020/056357

申请日：2020-10-19

申请人： VEECO INSTRUMENTS INC.

发明人： BRESNAHAN, Richard, Charles ,  PRIDDY, Scott, Wayne ,  CAMPBELL, William, Colbert, III ,  O'STEEN, Mark, Lee ,  FARRELL, Stephen, Gary

IPC分类号： C30B23/02 ,  C30B23/00

摘要： Systems and methods for providing controllable sub strate-to-source arrangements in a Molecular Beam Epitaxy (MBE) system to selectively adjust a distance, orientation, or other geometric configuration as between the source(s) and substrate(s) used in epitaxial growth systems are described herein. It has been found that by controllably adjusting height, crucible type and angle, and other processing conditions, that extremely high thickness uniformity can be accomplished in epitaxially grown wafers.

公开(公告)号：WO2020172244A1

公开(公告)日：2020-08-27

申请号：PCT/US2020/018786

申请日：2020-02-19

申请人： VEECO INSTRUMENTS INC.

发明人： PACIER, Michael, W. ,  SERSHEN, Michael, J. ,  BERTUCH, Adam, F. ,  LECORDIER, Laurent ,  BUDEN, Thousif Ahamad, Khan Hosakote ,  RAO, Ramesh Prasad, Manchaladore Narahari

IPC分类号： C23C16/54 ,  C23C14/56 ,  H01L21/67 ,  H01L21/673 ,  H01L21/677 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67303 ,  H01L21/67742 ,  H01L21/67754 ,  H01L21/68707

摘要： Fully automated batch production thin film deposition systems configured to deliver uniformity combined with high throughput at a low cost-per-wafer. In some examples, systems of the present disclosure include automated safe wafer handling via low-impact batch transfer via transportable wafer racks loaded with a plurality of wafers. In some examples, systems include a modular pre- heat & cool-down architecture that enables a flexible thermal management solution tailored around particular specifications.

公开(公告)号：WO2017196622A3

公开(公告)日：2017-11-16

申请号：PCT/US2017/030970

申请日：2017-05-04

申请人： VEECO INSTRUMENTS INC.

发明人： DRUZ, Boris ,  YEVTUKHOV, Rustam ,  ELLIOT, Rhodri ,  BEST, Jim ,  PORSHNEV, Peter

IPC分类号： H01J37/30 ,  H01J37/317

摘要： Embodiments relate to a grid short clearing system is provided for gridded ion beam sources used in industrial applications for materials processing systems that reduces grid damage during operation. In various embodiments, the ion source is coupled to a process chamber and a grid short clearing system includes methods for supplying a gas to the process chamber and setting the gas pressure to a predetermined gas pressure in the range between 50 to 750 Torr, applying an electrical potential difference between each adjacent pair of grids using a current-limited power supply, and detecting whether or not the grid shorts are cleared. The electrical potential difference between the grids is at least 10% lower than the DC electrical breakdown voltage between the grids with no contaminants.

公开(公告)号：WO2017196622A2

公开(公告)日：2017-11-16

申请号：PCT/US2017/030970

申请日：2017-05-04

申请人： VEECO INSTRUMENTS INC.

发明人： DRUZ, Boris ,  YEVTUKHOV, Rustam ,  ELLIOT, Rhodri ,  BEST, Jim ,  PORSHNEV, Peter

IPC分类号： H01J37/30 ,  H01J37/317

CPC分类号： H01J37/36 ,  G01R19/16533 ,  H01J37/3002 ,  H01J37/3007 ,  H01J37/32018 ,  H01J37/32944 ,  H01J2237/0206 ,  H01J2237/0213 ,  H01J2237/18 ,  H01J2237/335

摘要： Embodiments relate to a grid short clearing system is provided for gridded ion beam sources used in industrial applications for materials processing systems that reduces grid damage during operation. In various embodiments, the ion source is coupled to a process chamber and a grid short clearing system includes methods for supplying a gas to the process chamber and setting the gas pressure to a predetermined gas pressure in the range between 50 to 750 Torr, applying an electrical potential difference between each adjacent pair of grids using a current-limited power supply, and detecting whether or not the grid shorts are cleared. The electrical potential difference between the grids is at least 10% lower than the DC electrical breakdown voltage between the grids with no contaminants.

摘要翻译： 实施例涉及一种用于在工业应用中用于材料处理系统的栅格化离子束源的栅极短路清除系统，其减少了在运行期间的电网损坏。 在各种实施例中，离子源耦合到处理室并且网格短路清除系统包括用于将气体供应到处理室并将气体压力设定在50托托至750托之间的范围内的预定气压的方法， 使用电流限制电源在每个相邻的一对电网之间的电势差，并检测电网短路是否被清除。 电网之间的电位差至少比没有污染物的电网之间的直流电击穿电压低10％。

公开(公告)号：WO2017095748A1

公开(公告)日：2017-06-08

申请号：PCT/US2016/063869

申请日：2016-11-28

申请人： VEECO INSTRUMENTS, INC.

发明人： SU, Jie ,  PAPASOULIOTIS, George

IPC分类号： H01L21/02 ,  H01L21/324

CPC分类号： H01L29/7783 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/207 ,  H01L29/66462 ,  H01L29/7786

摘要： Methods for stress control in thin silicon (Si) wafer-based semiconductor materials. By a specific interrelation of process parameters (e.g., temperature, reactant supply, time), a highly uniform nucleation layer is formed on the Si substrate that mitigates and/or better controls the stress (tensile and compressive) in subsequent layers formed on the thin Si substrate.

摘要翻译： 薄硅（Si）晶片基半导体材料中的应力控制方法。 通过工艺参数（例如温度，反应物供应，时间）的特定相互关系，在Si衬底上形成高度均匀的成核层，其减轻和/或更好地控制在薄层上形成的后续层中的应力（拉伸和压缩） Si衬底。

公开(公告)号：WO2017075282A1

公开(公告)日：2017-05-04

申请号：PCT/US2016/059214

申请日：2016-10-27

申请人： VEECO INSTRUMENTS INC.

发明人： PRANJPE, Ajit ,  DRUZ, Boris ,  ROOK, Katrina ,  SRINIVASAN, Narasimhan

IPC分类号： H01L43/02 ,  H01L43/10 ,  H01L43/12

CPC分类号： H01L43/12 ,  H01L43/00 ,  H01L43/02 ,  H01L43/08

摘要： This disclosure provides various methods for improved etching of spin-transfer torque random access memory (STT-RAM) structures. In one example, the method includes (1) ion beam etch of the stack just past the MTJ at near normal incidence, (2) a short clean-up etch at a larger angle in a windowed mode to remove any redeposited material along the sidewall that extends from just below the MTJ to just above the MTJ, (3) deposition of an encapsulant with controlled step coverage to revert to a vertical or slightly re-entrant profile from the tapered profile generated by the etch steps, (4) ion beam etch of the reainder of the stack at near normal incidence while preserving the encapsulation along the sidewall of the MTJ, (5) clean-up etch at a larger angle and windowed mode to remove redeposited materials from the sidewalls, and (6) encapsulation of the etched stack.

摘要翻译： 本公开提供了用于改善自旋转移力矩随机存取存储器（STT-RAM）结构的蚀刻的各种方法。 在一个实例中，该方法包括（1）以接近法向入射正好经过MTJ的叠层的离子束蚀刻，（2）在窗口模式中以较大角度的短清理蚀刻，以沿着侧壁去除任何再沉积材料 从MTJ正下方延伸到MTJ正上方，（3）沉积具有受控台阶覆盖的密封剂，以从由蚀刻步骤产生的锥形轮廓恢复到垂直或稍微凹入的轮廓，（4）离子束 堆栈中的同时保持沿着MTJ的侧壁上的封装，（5）以更大的角度和窗口模式，以从侧壁除去再沉积的材料的清理蚀刻，和（6）的封装接近垂直入射的reainder的蚀刻 蚀刻的堆栈。