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公开(公告)号：WO2021188341A1
公开(公告)日：2021-09-23
申请号：PCT/US2021/021744
申请日：2021-03-10
发明人： SRINIVASAN, Narasimhan , HENRY, Tania , CERIO, Frank , TURNER, Paul , IP, Vincent , MEHTA, Rutvik
摘要： Methods for forming thin, low resistivity metal layers, such as tungsten (W) and ruthenium (Ru) layers. The methods include depositing a metal material onto a substrate via ion beam deposition with assist in a process chamber at a temperature of at least 250°C to produce the metal film. A resulting thin tungsten film has large and highly oriented a(110) grains having a resistivity less than 10 µΩ-cm and thickness less than 300 Å, with no discernable b-phase. A resulting thin ruthenium film has a resistivity less than 12 µΩ-cm and a thickness less than 300 Å.
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公开(公告)号：WO2019246366A1
公开(公告)日：2019-12-26
申请号：PCT/US2019/038186
申请日：2019-06-20
摘要： Transfer methods disclosed herein include transferring micro-LEDs from a first carrier to a second carrier. The methods include bonding the micro-LEDs to the first carrier using a first releasable bonding layer that releases when exposed to actinic light. The micro-LEDs are then secured to a second carrier. The first bonding layer is then irradiated through the first releasable bonding layer through the first carrier with the actinic light to release the micro- LEDs from the first carrier. The second carrier can be a display backplane having bonding pads and the micro-LEDs can be secured to the bonding pads. The actinic light can be provided in the form of a scanning actinic light beam. The display backplane can be used to form a micro-LED display. Methods disclosed herein can be used to transfer other devices, such as non-LED light-emitting devices, sensing devices, and microelectromechanical devices, from a first carrier to a second carrier.
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3.发明申请
公开(公告)号：WO2018098075A1
公开(公告)日：2018-05-31
申请号：PCT/US2017/062568
申请日：2017-11-20
CPC分类号： C23C16/52 , C23C16/303 , C23C16/34 , C23C16/45502 , C23C16/45574 , C23C16/4584 , C30B35/00 , H01L21/0254 , H01L21/0262 , H01L21/6719 , H01L21/67253 , H01L21/68764 , H01L21/68771 , H01L22/12 , H01L22/26 , H01L29/2003 , H01L29/205
摘要： Systems and methods are described herein for improving the overall thickness control and the radial thickness profile of epitaxially-grown films or layers on wafers. Continuous, in situ measurement of thickness at a radially inner region and a radially outer region are used in embodiments to control corresponding precursor and/or dilution gas flow rates. Such measurements can be made using white light reflectometry through a viewport in the reactor housing.
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公开(公告)号：WO2017151323A1
公开(公告)日：2017-09-08
申请号：PCT/US2017/018180
申请日：2017-02-16
IPC分类号： H01L21/687 , H01L21/683
CPC分类号： H01L21/68735 , H01L21/6838 , H01L21/68728 , H01L21/68742 , H01L21/68785
摘要： A wafer handling assembly comprising a center hub supporting a vertical non-contact lifting head and at least one radially extending and radially retracting wafer engaging mechanism having a surface to engage a wager at a peripheral edge of the wafer, where the peripheral edge is a corner edge or a side edge. In some implementations, the wafer engaging mechanism has a foot on which the wafer edge is supported. The lifting head may be vertically moveable in respect to the assembly.
摘要翻译： 一种晶片搬运组件，包括支撑垂直非接触式升降头的中心轮毂和至少一个径向延伸且径向缩回的晶片接合机构，所述晶片接合机构具有在晶片的外围边缘处与吸嘴接合的表面 ，其中外围边缘是角部边缘或侧边缘。 在一些实施方式中，晶片接合机构具有脚，晶片边缘被支撑在脚上。 升降头可以相对于组件垂直移动。
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公开(公告)号：WO2016209647A1
公开(公告)日：2016-12-29
申请号：PCT/US2016/037022
申请日：2016-06-10
IPC分类号： H01L21/205 , H01L21/68 , H01L21/677 , H01L21/02
CPC分类号： H01L21/68785 , C23C16/4584 , C23C16/4585 , H01L21/68735
摘要： A self-centering wafer carrier system for a chemical vapor deposition (CVD) reactor includes a wafer carrier comprising an edge. The wafer carrier at least partially supports a wafer for CVD processing. A rotating tube comprises an edge that supports the wafer carrier during processing. An edge geometry of the wafer carrier and an edge geometry of the rotating tube being chosen to provide a coincident alignment of a central axis of the wafer carrier and a rotation axis of the rotating tube during process at a desired process temperature.
摘要翻译： 用于化学气相沉积（CVD）反应器的自定心晶片载体系统包括具有边缘的晶片载体。 晶片载体至少部分地支撑用于CVD处理的晶片。 旋转管包括在处理期间支撑晶片载体的边缘。 晶片载体的边缘几何形状和旋转管的边缘几何形状被选择为在期望的工艺温度下处理期间提供晶片载体的中心轴线和旋转管的旋转轴线的重合对准。
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公开(公告)号：WO2014152836A1
公开(公告)日：2014-09-25
申请号：PCT/US2014/027925
申请日：2014-03-14
CPC分类号： C23C14/505 , C23C14/044 , C23C14/221 , C23C14/225 , C23C14/46 , C23C14/542 , H01J37/08 , H01J37/20 , H01J37/3053 , H01J37/3178 , H01J2237/20207 , H01J2237/20214 , H01J2237/20221
摘要： Method and apparatus for processing a substrate (44) with an energetic particle beam (42). Features (66) on the substrate (44) are oriented relative to the energetic particle beam (42) and the substrate is scanned through the energetic particle beam (42). The substrate is periodically indexed about its azimuthal axis of symmetry (122), while shielded from exposure to the energetic particle beam (42), to reorient the features relative to the major dimension of the beam. When the substrate is shielded, the energetic particle particle beam is turned off.
摘要翻译： 用能量粒子束（42）处理衬底（44）的方法和装置。 衬底（44）上的特征（66）相对于能量粒子束（42）定向，衬底通过能量粒子束（42）扫描。 衬底围绕其方位角对称轴（122）周期性地被索引，同时被屏蔽以免暴露于能量粒子束（42），以相对于束的主要尺寸重新定向特征。 当基板被屏蔽时，能量粒子粒子束被关闭。
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公开(公告)号：WO2014004285A1
公开(公告)日：2014-01-03
申请号：PCT/US2013/047010
申请日：2013-06-21
CPC分类号： G01J5/0007 , G01J5/02 , G01J5/602
摘要： A method of in situ temperature measurement for a wafer treatment reactor such as a chemical vapor deposition reactor 10 desirably includes the steps of heating the reactor until the reactor reaches a wafer treatment temperature and rotating a wafer support element 40 within the reactor about a rotational axis 42. The method desirably further includes, while the wafer support element 40 is rotating about the rotational axis 42, obtaining first operating temperature measurements using a first operating pyrometer 71 that receives radiation from a first portion of the wafer support element, and obtaining first wafer temperature measurements using a wafer temperature measurement device 80 that receives radiation from at least one wafer 46, the wafer temperature measurement device located at a first position A.
摘要翻译： 对于诸如化学气相沉积反应器10的晶片处理反应器的原位温度测量的方法理想地包括加热反应器直到反应器达到晶片处理温度并使反应器内的晶片支撑元件40围绕旋转轴线旋转的步骤 该方法理想地还包括当晶片支撑元件40围绕旋转轴线42旋转时，使用接收来自晶片支撑元件的第一部分的辐射的第一操作高温计71获得第一操作温度测量值，并且获得第一晶片 使用接收来自至少一个晶片46的辐射的晶片温度测量装置80的温度测量，晶片温度测量装置位于第一位置A.
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公开(公告)号：WO2013192510A1
公开(公告)日：2013-12-27
申请号：PCT/US2013/047024
申请日：2013-06-21
发明人： TAS, Guray , ZHOU, Jing , KWON, Daewon
CPC分类号： C23C16/481 , C23C16/52
摘要： Apparatuses for reducing radiation thermometry bias errors in enclosures such as CVD reactors. In one embodiment, a radiation thermometer utilizes an off-focus telecentric lens arrangement. The off-focus telecentric arrangement is focused at infinity, but is utilized to capture radiation from a relatively proximate target (e.g., within a couple meters) that is out of focus. The capture of collimated radiation from the target diminishes the contribution of stray radiation. In another embodiment, scattered radiation originating from a designated segment of a peripheral heating element can be reduced locally by one of several mechanisms, including reducing the emission (e.g., operating temperature) of the designated segment, or capturing or deflecting a portion of the radiation originating from the designated segment. Radiation thermometers fixed proximate an axis that extends from the center of the wafer carrier and across the designated segment are subject to less stray radiation, thus providing a more reliable temperature reading.
摘要翻译： 用于减少诸如CVD反应器的外壳中辐射测温偏差误差的装置。 在一个实施例中，辐射温度计利用离焦远心透镜装置。 离焦远心布置集中在无穷远处，但被用于从不相关的目标（例如，在几米内）捕获辐射。 来自目标的准直辐射的捕获减少了杂散辐射的贡献。 在另一个实施例中，源自外围加热元件的指定片段的散射辐射可以通过几种机制之一来局部地减少，包括减少指定片段的发射（例如，工作温度），或者捕获或偏转辐射的一部分 源自指定的细分。 靠近从晶片载体的中心延伸并穿过指定的区段的轴固定的辐射温度计经受更少的杂散辐射，从而提供更可靠的温度读数。
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公开(公告)号：WO2013033315A2
公开(公告)日：2013-03-07
申请号：PCT/US2012/053016
申请日：2012-08-30
申请人： VEECO INSTRUMENTS INC. , PARANJPE, Ajit , VOLF, Boris , ARMOUR, Eric, A. , KRISHNAN, Sandeep , WEI, Guanghua , URBAN, Lukas
发明人： PARANJPE, Ajit , VOLF, Boris , ARMOUR, Eric, A. , KRISHNAN, Sandeep , WEI, Guanghua , URBAN, Lukas
IPC分类号： H01L21/683 , H01L21/205 , C23C16/458
CPC分类号： H01L21/68764 , C23C16/4584 , C23C16/4586 , H01L21/67103 , H01L21/68707 , H01L21/68771
摘要： A wafer carrier (32) used in wafer treatments such as chemical vapor deposition has pockets (40) for holding the wafers (70) and support surfaces (56) for supporting the wafers above the floors (46) of the pockets. The carrier (32) is provided with thermal control features such as trenches (41) which form thermal barriers having lower thermal conductivity than surrounding portions of the carrier. These thermal control features promote a more uniform temperature distribution across the wafer surfaces (72, 74) and across the carrier top surface (34).
摘要翻译： 在诸如化学气相沉积的晶片处理中使用的晶片载体（32）具有用于保持晶片（70）的凹槽（40）和用于将晶片支撑在凹穴的地板（46）上方的支撑表面（56）。 载体（32）设置有诸如沟槽（41）的热控制特征，其形成具有比载体周围部分更低的热导率的热障。 这些热控制特征促使晶片表面（72,74）和跨越载体顶表面（34）的更均匀的温度分布。
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公开(公告)号：WO2012092127A8
公开(公告)日：2012-07-05
申请号：PCT/US2011/066831
申请日：2011-12-22
申请人： VEECO INSTRUMENTS INC. , GURARY, Alexander, I. , BOGUSLAVSKIY, Vadim , KRISHNAN, Sandeep , KING, Matthew
IPC分类号： G01J5/00
摘要： A method of in-situ pyrometer calibration for a wafer treatment reactor such as a CVD reactor 12 desirably includes the steps of positioning a calibrating pyrometer 80 at a first calibrating position A and heating the reactor until the reactor reaches a pyrometer calibration temperature. The method desirably further includes rotating a support element 40 about a rotational axis 42, and while the support element is rotating about the rotational axis, obtaining first operating temperature measurements from a first operating pyrometer 71 installed at a first operating position 1R, and obtaining first calibrating temperature measurements from the calibrating pyrometer 80. Both the calibrating pyrometer 80 and the first operating pyrometer 71 desirably are adapted to receive radiation from a first portion of the wafer support element 40 at a first radial distance D1 from the rotational axis 42 of the wafer support element.
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