STACKED PACKAGE WITH ELECTRICAL CONNECTIONS CREATED USING HIGH THROUGHPUT ADDITIVE MANUFACTURING

    公开(公告)号:WO2019066998A1

    公开(公告)日:2019-04-04

    申请号:PCT/US2017/054682

    申请日:2017-09-30

    Abstract: A device package and a method of forming the device package are described. The device package includes one or more dies disposed on a first substrate. The device packages further includes one or more interconnects vertically disposed on the first substrate, and a mold layer disposed over and around the first die, the one or more interconnects, and the first substrate. The device package has a second die disposed on a second substrate, wherein the first substrate is electrically coupled to the second substrate with the one or more interconnects, and wherein the one or more interconnects are directly disposed on at least one of a top surface of the first substrate and a bottom surface of the second substrate without an adhesive layer. The device package may include one or more interconnects having one or more different thicknesses or heights at different locations on the first substrate.

    STACKED SILICON DIE ARCHITECTURE WITH MIXED FLIPCHIP AND WIREBOND INTERCONNECT

    公开(公告)号:WO2019133019A1

    公开(公告)日:2019-07-04

    申请号:PCT/US2017/069157

    申请日:2017-12-30

    Abstract: Embodiments include semiconductor packages and a method of forming the semiconductor packages. A semiconductor package includes a base die disposed on an interposer. The semiconductor package also has a plurality of dies on top of one another to form a stack on the base die. Each die has a top surface and a bottom surface that is opposite from the top surface, and each die has one or more die contacts on at least one of the top surface and the bottom surface that are each electrically coupled to at least one die contact of the base die with one or more wire bonds. The semiconductor package includes a mold layer disposed over and around the plurality of dies, the base die, and the one or more wire bonds. The base die may have a first surface area that exceeds a second surface area of the plurality of stacked dies.

    ZERO-MISALIGNMENT TWO-VIA STRUCTURES
    8.
    发明申请

    公开(公告)号:WO2019133015A1

    公开(公告)日:2019-07-04

    申请号:PCT/US2017/069153

    申请日:2017-12-30

    Abstract: Device package and a method of forming a device package are described. The device package includes an interposer with interconnects on an interconnect package layer and a conductive layer on the interposer. The device package has dies on the conductive layer, where the package layer includes a zero-misalignment two-via stack (ZM2VS) and a dielectric. The ZM2VS directly coupled to the interconnect. The ZM2VS further includes the dielectric on a conductive pad, a first via on a first seed, and first seed on a top surface of the conductive pad, where the first via extends through dielectric. The ZM2VS also has a conductive trace on dielectric, and a second via on a second seed, the second seed is on the dielectric, where the conductive trace connects to first and second vias, where second via connects to an edge of conductive trace opposite from first via.

    PACKAGE WITH THERMAL INTERFACE MATERIAL RETAINING STRUCTURES ON DIE AND HEAT SPREADER

    公开(公告)号:WO2019066990A1

    公开(公告)日:2019-04-04

    申请号:PCT/US2017/054674

    申请日:2017-09-30

    Inventor: EID, Feras

    Abstract: A device package and a method of forming a device package are described. The device package includes a lid with one or more legs on an outer periphery of the lid, a top surface, and a bottom surface, where the lid is disposed on the substrate. The legs of the lid are attached to the substrate with a sealant. The device package also has one or more dies disposed on the substrate. The die(s) are below the bottom surface of the lid, where each of the dies has a top surface and a bottom surface. The device package further includes a retaining structure disposed between the bottom surface of the lid and the top surface of the die, where the retaining structure has one or more inner walls. The device package includes a thermal interface material disposed within the inner walls of the retaining structure and above the top surface of the die.

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