Abstract:
Disclosed herein are amphiphilic surfactants which comprise a polymer chain having a hydrophobic unit and hydrophilic unit wherein the polymer is tethered to an inorganic nanoparticle. Further disclosed are methods for preparing the disclosed amphiphilic surfactants.
Abstract:
An apparatus for inspecting a large area substrate for display manufacturing is described. The apparatus includes a vacuum chamber; a substrate support arranged in the vacuum chamber, wherein the substrate support is configured for supporting the large area substrate for display manufacturing; and a first imaging charged particle beam microscope configured for generating a charged particle beam for inspecting a substrate supported by the substrate support, wherein the first imaging charged particle beam microscope includes a retarding field lens component of an objective lens.
Abstract:
The invention describes a method and a device (9) for executing a method of X-ray nano-radiography and nanotomography using a scanning electron microscope (1) consisting of the focus of an electron beam (2) from an electron microscope (1) onto one point of the surface of a scanned sample (3), the emission of bremsstrahlung and fluorescent radiation (6) from the focal point of the impact of the electron beam (2), the sensing of the scanned sample (3), and recording an image of the structure of the scanned sample (3) based on the change of intensities of the bremsstrahlung and fluorescent radiation (6) by the imaging detector (7) arranged behind the sample (3).
Abstract:
Methods and systems for determining a position of inspection data with respect to a stored high resolution die image are provided. One method includes aligning data acquired by an inspection system for alignment sites on a wafer with data for predetermined alignment sites. The predetermined alignment sites have a predetermined position in die image space of a stored high resolution die image for the wafer. The method also includes determining positions of the alignment sites in the die image space based on the predetermined positions of the predetermined alignment sites in the die image space. In addition, the method includes determining a position of inspection data acquired for the wafer by the inspection system in the die image space based on the positions of the alignment sites in the die image space.
Abstract:
The subject matter described herein includes methods, systems, and computer readable media for measuring and correcting drift distortion in images obtained using the scanning microscope. One method includes obtaining an image series of a sample acquired using scanning- microscope by rotating scan coordinates of the microscope between successive image frames. The method further includes determining at least one measurement of an angle or a distance associated with an image feature as a function of rotation angle from the series of rotated images. The method further includes using the at least one measurement to determine a model for drift distortion in the series of images. The method further includes using the drift distortion model to generate a drift corrected image from the series of images.
Abstract:
One embodiment relates to an electron beam apparatus for inspection and/or review. An electron source generates a primary electron beam, and an electron-optics system shapes and focuses said primary electron beam onto a sample held by a stage. A detection system detects signal-carrying electrons including secondary electrons and back-scattered electrons from said sample, and an image processing system processes data from said detection system. A host computer system that controls and coordinates operations of the electron-optics system, the detection system, and the image processing system. A graphical user interface shows a parameter space and provides for user selection and activation of operating parameters of the apparatus. Another embodiment relates to a method for detecting and/or reviewing defects using an electron beam apparatus. Other embodiments, aspects and features are also disclosed.
Abstract:
La présente invention concerne un procédé de calibration d'une technique CD-SEM, ledit procédé comportant les étapes suivantes : - détermination d'une fonction de correspondance transformant au moins un paramètre obtenu par modélisation d'une mesure fournie par la technique CD-SEM en une fonction d'au moins un paramètre représen- tatif d'une mesure fournie par une technique de caractérisation de réfé- rence différente de la technique CD-SEM, ladite fonction de correspon- dance étant caractérisée par une pluralité de coefficients; - réalisation de mesures sur une pluralité de motifs choisis pour couvrir le domaine de validité souhaité pour la calibration, lesdites mesures étant réalisées en utilisant à la fois la technique CD-SEM à calibrer et la technique de référence; - détermination, à partir desdites mesures, d'un jeu de coefficients de la fonction de correspondance minimisant la distance entre les fonctions des paramètres mesurés par la technique de référence et l'application de la fonction de correspondance aux paramètres obtenus par modéli- sation des mesures fournies par la technique CD-SEM; - utilisation dudit jeu de coefficients lors de la mise en œuvre de la tech- nique CD-SEM calibrée.
Abstract:
The invention relates to an apparatus and method for inspecting a sample. The apparatus comprises a generator for generating an array of primary charged particle beams (33), and a charged particle optical system with an optical axis (38). The optical system comprises a first lens system (37, 310) for focusing all primary beams (33) into a first array of spots in an intermediate plane, and a second lens system (313, 314) for focusing all primary beams (33) into a second array of spots on the sample surface (315). The apparatus comprises a position sensitive backscattered charged particle detector (311) positioned at or near the intermediate plane. The second lens system comprises an electromagnetic or electrostatic lens which is common for all charged particle beams. Preferably the second lens system comprises a magnetic lens for rotating the array of primary beams (33) around the optical axis (38) to position the second array of charged particle spots with respect to the first array at an angle.