Abstract:
In general, in one aspect, a methodincludes determining a critical dimension (CD) distribution on a photomaskby measuring deep Ultra-Violet(DUV) transmission across the photomask.
Abstract:
A system for processing a substrate includes a light source to provide light pulses, a stage to support a substrate, optics to focus the light pulses onto the substrate, a scanner to scan the light pulses across the substrate, a computer to control properties of the light pulses and the scanning of the light pulses such that color centers are generated in various regions of the substrate, and at least one of (i) an ultraviolet light source to irradiate the substrate with ultraviolet light or (ii) a heater to heat the substrate after formation of the color centers to stabilize a transmittance spectrum of the substrate.
Abstract:
A method includes generating, using a data processor, information showing variations of a parameter across a photo mask relative to an average value of the parameter measured at various locations on the photo mask. For example, the information can include data points, and each data point can be determined based on a ratio between a measurement value and an average of a plurality of measurement values.
Abstract:
A method for removing a soft defect from a reticle, the reticle comprising a substrate made from material transparent to UV irradiation and having a front surface and a back opposite surface, the front surface provided with a pattern on an absorber coating layer, the soft defect being located on the coating layer, on a space of the pattern or at another location within a volume enclosed between a pellicle substantially covering the front surface and the front surface of the reticle. The method comprises receiving information on the location of the soft defect; generating a pulsed laser beam using the pulsed laser source; and based on the information directing the pulsed laser beam through the back surface of the reticle and into the substrate and focusing the beam on the target location within the substrate adjacent the location of the soft defect or directly on the location of the soft defect.
Abstract:
A contribution to a wafer level critical dimension distribution from a scanner of a lithography system can be determined based on measured wafer level critica dimension uniformity distribution and a contribution to the wafer level critica dimension distribution from a photo mask. Light transmission (104) across the photo mask (162) can be measured, a transmittance variation distribution of the photo mask can be determined, and the contribution to the wafer level critical dimension distribution from the photo mask (162) can be determined (132) based on the transmittance variation distribution of the photo mask.
Abstract:
Apparatus and method for transmittance mapping of an object which is at least partially transparent to deep ultraviolet radiation. The method comprises directing a wide-band deep ultraviolet radiation so as to illuminate different areas of an array of successive areas of the object; using an optical detector positioned on an opposite side of the object with respect to the radiation source detecting the wide-band deep ultraviolet radiation that emerges from the object; and processing signals from the optical detector to determine the transmittance of the radiation through the different areas of the array of successive areas of the object.
Abstract:
Apparatus and method for transmittance mapping of an object which is at least partially transparent to deep ultraviolet radiation. The method comprises directing a wide-band deep ultraviolet radiation so as to illuminate different areas of an array of successive areas of the object; using an optical detector positioned on an opposite side of the object with respect to the radiation source detecting the wide-band deep ultraviolet radiation that emerges from the object; and processing signals from the optical detector to determine the transmittance of the radiation through the different areas of the array of successive areas of the object.
Abstract:
A method for removing a soft defect from a reticle, the reticle comprising a substrate made from material transparent to UV irradiation and having a front surface and a back opposite surface, the front surface provided with a pattern on an absorber coating layer, the soft defect being located on the coating layer, on a space of the pattern or at another location within a volume enclosed between a pellicle substantially covering the front surface and the front surface of the reticle. The method comprises receiving information on the location of the soft defect; generating a pulsed laser beam using the pulsed laser source; and based on the information directing the pulsed laser beam through the back surface of the reticle and into the substrate and focusing the beam on the target location within the substrate adjacent the location of the soft defect or directly on the location of the soft defect.