Abstract:
A composition comprising, for 100% of its total mass, at least 97% of an aluminium precursor of formula: Al(R 1 ) 2 (OR 2 ) with R 1 and R 2 independently selected in the group consisting of methyl, ethyl, propyl, isopropyl and t-butyl; and : - From 200 ppb to 5 ppm of Mo (Molybdenum); - From 1000 ppb to 5 ppm of Fe (Iron); - From 200 ppb to 5 ppm of Cu (Copper); - From 200 ppb to 5 ppm of Ta (Tantalum).
Abstract:
Compound of the formula Cp(R 1 ) m M(NR 2 2 ) 2 (=NR 3 ) (I): Wherein: M is a metal independently selected from Vanadium (V) or Niobium (Nb) and m ≤ 5; R 1 is an organic ligand, each one independently selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atom; R 2 is an organic ligand, each one independently selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atom; R 3 is an organic ligand selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atom.
Abstract:
L'invention décrit un procédé de dépôt de couches minces de nitrure de métal dont la composition en carbone et azote peut-être contrôlée en faisant varier le flux des réactifs. Le procédé consiste à faire réagir dans un réacteur de dépôt chimique en phase gazeuse (LPCVD1ALD) : - un composé organométallique liquide de formule Me (NR1R2)^=NRs)x Avec x = 1 , y = 3 ou x = 0, y = 4 ou 5 pour Me = Ta, V, Nb x = 2, y = 2 ou x = 0, y = 4 à 6 pour Me = Mo, W, Cr x = 0, y = 4 pour Me = Hf, Ti, Zr Ri, R2, R3 = groupements alkyle et/ou aryle. un gaz réducteur comme l'hydrogène et l'ammoniac - une aminé possédant au moins une liaison azote-hydrogène, afin de déposer les couches désirées sur un substrat désiré.
Abstract:
Conditioning of tungsten pentachloride to form specific crystalline phases is disclosed. The specific crystalline phases permit stable vapor pressures over extended periods of time during vapor deposition and etching processes.
Abstract:
Provided is a vessel having internally wettable surfaces therein coated with one or more barrier layers to, for example, inhibit contamination of a material, such as a metal halide, contained in the vessel.
Abstract:
A process of conditioning tungsten pentachloride to form specific crystalline phases are disclosed. The specific crystalline phases permit stable vapor pressures over extended periods of time during vapor deposition and etching processes.
Abstract:
Titanium-containing film forming compositions comprising titanium halide-containing precursors are disclosed. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Titanium-containing films on one or more substrates via vapor deposition processes.
Abstract:
Manganese-containing film forming compositions, their preparation, and their use for the vapor deposition of films are disclosed. The manganese-containing film forming compositions comprise silylamide-containing precursors, particularly {Mn[N(SiMe 2 Et) 2 ] 2 } 2 .
Abstract:
A composition comprising, for 100% of its total mass, at least 97% of a Trialkylaluminium and: - From 200 ppb to 5 ppm of Mo (Molybdenum); - From 1000 ppb to 5 ppm of Fe (Iron); - From 200 ppb to 5 ppm of Cu (Copper); - From 200 ppb to 10 ppm of Ta (Tantalum).
Abstract:
A method for forming a tantalum-containing layer on a substrate, the method comprising at least the steps of: a) providing a vapor comprising at least one precursor compound of the formula Cp(R 1 ) m Ta(NR 2 2 ) 2 (=NR 3 ) (I):Wherein: R 1 is an organic ligand, each one independently selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atoms; R 2 is an organic ligand, each one independently selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atoms; R 3 is an organic ligand selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atoms; b) reacting the vapor comprising the at least one compound of formula (I) with the substrate, according to an atomic layer deposition process, to form a layer of a tantalum-containing complex on at least one surface of said substrate.