公开(公告)号：WO2004104274A3

公开(公告)日：2005-08-11

申请号：PCT/US2004015881

申请日：2004-05-20

Applicant: BURGENER ROBERT H II ,  FELIX ROGER L ,  RENLUND GARY M

Inventor： BURGENER ROBERT H II ,  FELIX ROGER L ,  RENLUND GARY M

IPC: B32B9/00 ,  B32B9/04 ,  B32B13/04 ,  B32B19/00 ,  C30B20060101 ,  C30B25/00 ,  C30B29/16 ,  H01L21/20 ,  H01L21/363 ,  H01L21/365 ,  H01L21/368

CPC classification number: C30B25/00 ,  C30B29/16 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/02631

Abstract: A zinc oxide crystal growth substrate is disclosed. The zinc oxide crystal growth substrate includes a thin layer of single crystal zinc oxide deposited on an self supporting substrate surface by a chemical deposition process. The chemical deposition process is selected from RF sputtering, CVD (chemical vapor deposition), MOCVD (metal organic chemical vapor deposition), spin coating, electrophoresis, and hydrothermal growth processes. The self supporting substrate may be amorphous, polycrystalline, or crystalline. The thin layer of zinc oxide has a crystal lattice which permits the crystal growth of a crystal compatible with zinc oxide. The compatible crystal has a lattice parameter within about 5% of a corresponding lattice parameter of the zinc oxide.

Abstract translation: 公开了一种氧化锌晶体生长衬底。 氧化锌晶体生长衬底包括通过化学沉积工艺沉积在自支撑衬底表面上的单层氧化锌薄层。 化学沉积工艺选自RF溅射，CVD（化学气相沉积），MOCVD（金属有机化学气相沉积），旋涂，电泳和水热生长过程。 自支撑衬底可以是无定形的，多晶的或结晶的。 氧化锌薄层具有允许与氧化锌相容的晶体的晶体生长的晶格。 相容的晶体具有在氧化锌的相应晶格参数的约5％内的晶格参数。

公开(公告)号：WO2004105099A2

公开(公告)日：2004-12-02

申请号：PCT/US2004/015884

申请日：2004-05-20

Applicant: BURGENER, Robert, H., II ,  FELIX, Roger, L. ,  RENLUND, Gary, M.

Inventor： BURGENER, Robert, H., II ,  FELIX, Roger, L. ,  RENLUND, Gary, M.

IPC: H01L

CPC classification number: H01L33/285 ,  H01L21/0237 ,  H01L21/02554 ,  H01L21/02557 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02628 ,  H01L21/02631 ,  H01L29/22 ,  H01L29/267 ,  H01S5/3059 ,  H01S5/327

Abstract: Semiconductor devices containing group II-VI semiconductor materials are disclosed. The devices may include a p-n junction containing a p-type group II-VI semiconductor material and an n-type semiconductor material. The p-type group II-VI semiconductor includes a single crystal group II-VI semiconductor containing atoms of group II elements, atoms of group VI elements, and one or more p-type dopants. The p-type dopant concentration is greater than about 10 16 atoms cm -3 , the semiconductor resistivity is less than about 0.5 ohm- cm, and the carrier mobility is greater than about 0.1 cm 2 /V.s. The semiconductor devices may include light emitting diodes, laser diodes, field effect transistors, and photodetectors.

Abstract translation: 公开了含有II-VI族半导体材料的半导体器件。 器件可以包括含有p型II-VI族半导体材料和n型半导体材料的p-n结。 p型II-VI族半导体包括含有II族元素的原子，VI族元素的原子和一种或多种p型掺杂剂的单晶II-VI族半导体。 p型掺杂剂浓度大于约10 16原子cm -3，半导体电阻率小于约0.5欧姆 - 厘米，载流子迁移率大于约0.1厘米2 / V。 半导体器件可以包括发光二极管，激光二极管，场效应晶体管和光电检测器。

公开(公告)号：WO2004073046A2

公开(公告)日：2004-08-26

申请号：PCT/US2004/004737

申请日：2004-02-17

Applicant: ON INTERNATIONAL, INC. ,  BURGENER, Robert, H., II ,  FELIX, Roger, L. ,  RENLUND, Gary, M.

Inventor： BURGENER, Robert, H., II ,  FELIX, Roger, L. ,  RENLUND, Gary, M.

IPC: H01L

CPC classification number: C09K11/663 ,  C09K11/666 ,  C09K11/671 ,  C09K11/677 ,  C09K11/7442 ,  C09K11/7774 ,  C09K11/7775 ,  C09K11/7786 ,  H05B33/145

Abstract: Electroluminescent materials and devices which emit non-thermal light in response to an electric field are disclosed. The electroluminescent materials are based upon a multicomponent ceramic oxide host compound and one or more metal oxide dopant compounds which form a solid solution with the ceramic oxide host compound. The dopant is present in the host at an amount in the range from about 0.002 mole % to 0.1 mole %. In the electroluminescent devices, a layer of electroluminescent material is disposed between a transparent conductive oxide layer and a ground plane. An electric field generator is electrically connected to the conductive oxide layer and the ground plane for generating an electric field. The layer of electroluminescent material is coated with at least one barrier layer, and preferably a pair of barrier layers, to inhibit chemical reaction of the electroluminescent material. The electroluminescent devices preferably include a dielectric layer.

Abstract translation: 公开了响应于电场发射非热光的电致发光材料和器件。 电致发光材料基于多组分陶瓷氧化物主体化合物和与陶瓷氧化物主体化合物形成固溶体的一种或多种金属氧化物掺杂剂化合物。 掺杂剂以约0.002摩尔％至0.1摩尔％的量存在于主体中。 在电致发光器件中，电致发光材料层设置在透明导电氧化物层和接地平面之间。 电场发生器电连接到导电氧化物层和用于产生电场的接地平面。 电致发光材料层涂覆有至少一个阻挡层，优选一对阻挡层，以抑制电致发光材料的化学反应。 电致发光器件优选包括电介质层。

公开(公告)号：WO2004105099A3

公开(公告)日：2009-03-26

申请号：PCT/US2004015884

申请日：2004-05-20

Applicant: BURGENER ROBERT H II ,  FELIX ROGER L ,  RENLUND GARY M

Inventor： BURGENER ROBERT H II ,  FELIX ROGER L ,  RENLUND GARY M

IPC: H01L27/15 ,  H01L21/365 ,  H01L21/368 ,  H01L29/22 ,  H01L29/267 ,  H01L33/28 ,  H01S5/30 ,  H01S5/327

CPC classification number: H01L33/285 ,  H01L21/0237 ,  H01L21/02554 ,  H01L21/02557 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02628 ,  H01L21/02631 ,  H01L29/22 ,  H01L29/267 ,  H01S5/3059 ,  H01S5/327

Abstract: Semiconductor devices containing group II-VI semiconductor materials are disclosed. The devices may include a p-n junction (50) containing a p-type (52) group II-VI semiconductor material and an n-type semiconductor material. The p-type group II-VI semiconductor includes a single crystal group II-VI semiconductor containing atoms of group II elements, atoms of group VI elements, and one or more p-type dopants. The p-type dopant concentration is greater than about 1016 atoms'cm-3,the semiconductor resistivity is less than about 0.5 ohm.cm, and the carrier mobility is greater than about 0.1 cm//V-s. The semiconductor devices may include light emitting diodes, laser diodes, field effect transistors, and photodetectors.

Abstract translation: 公开了含有II-VI族半导体材料的半导体器件。 器件可以包括含有p型（52）II-VI族半导体材料和n型半导体材料的p-n结（50）。 p型II-VI族半导体包括含有II族元素的原子，VI族元素的原子和一种或多种p型掺杂剂的单晶II-VI族半导体。 p型掺杂剂浓度大于约1016 atoms'cm-3，半导体电阻率小于约0.5欧姆·厘米，载流子迁移率大于约0.1厘米// V-s。 半导体器件可以包括发光二极管，激光二极管，场效应晶体管和光电检测器。

公开(公告)号：WO2004073046A3

公开(公告)日：2006-03-09

申请号：PCT/US2004004737

申请日：2004-02-17

Applicant: ON INTERNATIONAL INC ,  BURGENER ROBERT H II ,  FELIX ROGER L ,  RENLUND GARY M

Inventor： BURGENER ROBERT H II ,  FELIX ROGER L ,  RENLUND GARY M

IPC: C09K11/66 ,  C09K11/67 ,  C09K11/74 ,  C09K11/77 ,  H01L20060101 ,  H01L31/0232 ,  H05B33/00 ,  H05B33/14

CPC classification number: C09K11/663 ,  C09K11/666 ,  C09K11/671 ,  C09K11/677 ,  C09K11/7442 ,  C09K11/7774 ,  C09K11/7775 ,  C09K11/7786 ,  H05B33/145

Abstract: Electroluminescent materials and devices which emit non-thermal light in response to an electric field are disclosed. The electroluminescent materials are based upon a multicomponent ceramic oxide host compound and one or more metal oxide dopant compounds which form a solid solution with the ceramic oxide host compound. The dopant is present in the host at an amount in the range from about 0.002 mole % to 0.1 mole %. In the electroluminescent devices, a layer of electroluminescent material (12, 32) is disposed between a transparent conductive oxide layer (14, 34) and a ground plane (16, 36). An electric field generator (18, 38) is electrically connected to the conductive oxide layer (14, 34) and the ground plane (16, 36) for generating an electric field. The layer of electroluminescent material (12, 32) is coated with at least one barrier layer (20, 40), and preferably a pair of barrier layers, to inhibit chemical reaction of the electroluminescent material. The electroluminescent devices preferable include a dielectric layer (42).

Abstract translation: 公开了响应于电场发射非热光的电致发光材料和器件。 电致发光材料基于多组分陶瓷氧化物主体化合物和与陶瓷氧化物主体化合物形成固溶体的一种或多种金属氧化物掺杂剂化合物。 掺杂剂以约0.002摩尔％至0.1摩尔％的量存在于主体中。 在电致发光器件中，一层电致发光材料（12,32）设置在透明导电氧化物层（14,34）和接地平面（16,36）之间。 电场发生器（18,38）电连接到导电氧化物层（14,34）和用于产生电场的接地平面（16,36）。 电致发光材料层（12,32）涂覆有至少一个阻挡层（20,40），最好是一对势垒层，以阻止电致发光材料的化学反应。 电致发光器件优选包括电介质层（42）。

公开(公告)号：WO2006009783A2

公开(公告)日：2006-01-26

申请号：PCT/US2005/021319

申请日：2005-06-17

Applicant: ON INTERNATIONAL, INC. ,  BURGENER, Robert, H., II ,  FELIX, Roger, L. ,  RENLUND, Gary, M.

Inventor： BURGENER, Robert, H., II ,  FELIX, Roger, L. ,  RENLUND, Gary, M.

IPC: H01L23/58 ,  H01L21/31 ,  H01L21/469

CPC classification number: H01L21/02551 ,  B82Y20/00 ,  C01G9/02 ,  C01P2006/40 ,  C30B25/02 ,  C30B29/16 ,  C30B29/48 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02568 ,  H01L21/02579 ,  H01L21/3115 ,  H01L21/316 ,  H01L23/5329 ,  H01L29/225 ,  H01L31/02963 ,  H01L33/025 ,  H01L33/28 ,  H01L33/285 ,  H01L2924/0002 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/327 ,  H01S5/347 ,  H01L2924/00

Abstract: Low dielectric constant group II-VI compounds, such as zinc oxide, and fabrication methods are disclosed. Low dielectric constant insulator materials are fabricated by doping zinc oxide with at least one mole % p-type dopant ion. Low dielectric constant zinc oxide insulator materials are fabricated by doping zinc oxide with silicon having a concentration of at least 1017 atoms/cm3. Low dielectric zinc oxide insulator materials are fabricated by doping zinc oxide with a dopant ion having a concentration of at least about 1018 atoms/cm3, followed by heating to a temperature which converts the zinc oxide to an insulator. The temperature varies depending upon the choice of dopant. For arsenic, the temperature is at least about 450°C; for antimony, the temperature is at least about 650°C. The dielectric constant of zinc oxide semiconductor is lowered by doping zinc oxide with a dopant ion at a concentration at least about 1018 to about 1019 atoms/cm3.

Abstract translation: 公开了低介电常数II-VI族化合物，例如氧化锌，以及制造方法。 低介电常数绝缘体材料通过用至少1摩尔％的p型掺杂剂离子掺杂氧化锌来制造。 低介电常数氧化锌绝缘体材料通过用浓度至少为1017原子/ cm3的硅掺杂氧化锌来制造。 低介电氧化锌绝缘体材料通过用浓度至少约1018原子/ cm3的掺杂剂离子掺杂氧化锌，随后加热至将氧化锌转化为绝缘体的温度来制造。 温度根据掺杂剂的选择而变化。 对于砷而言，温度至少约为450℃; 对于锑，温度至少约为650℃。 氧化锌半导体的介电常数通过用掺杂剂离子以至少约1018至约1019原子/ cm3的浓度掺杂氧化锌而降低。

公开(公告)号：WO2004105098A3

公开(公告)日：2005-04-14

申请号：PCT/US2004015883

申请日：2004-05-20

Applicant: BURGENER ROBERT H II ,  FELIX ROGER L ,  RENLUND GARY M

Inventor： BURGENER ROBERT H II ,  FELIX ROGER L ,  RENLUND GARY M

IPC: C30B23/02 ,  C30B25/02 ,  C30B29/48 ,  H01L21/363 ,  H01L21/365 ,  H01L21/368 ,  H01L29/22 ,  H01L29/225 ,  H01L29/227 ,  H01L33/28 ,  H01L29/12

CPC classification number: H01L33/285 ,  C30B23/02 ,  C30B25/02 ,  C30B29/48 ,  H01L21/0237 ,  H01L21/02554 ,  H01L21/02557 ,  H01L21/02579 ,  H01L21/02628 ,  H01L21/02631 ,  H01L29/22 ,  H01L29/225 ,  H01L29/227

Abstract: A persistent p-type group II-VI semiconductor material is disclosed. The group II-VI semiconductor includes atoms of group 11 elements, atoms of group VI elements, and one or more p-type dopants. The p-type dopant concentration is sufficient to render the group II-VI semiconductor material in a single crystal form. The semiconductor resistivity is less than about 0.5 ohm-cm, and the carrier mobility is greater than about 0.1 CM /V⋅s. Group II elements include zinc, cadmium, the alkaline earth metals such as beryllium, magnesium calcium, strontium, and barium, and mixtures thereof Group VI elements include oxygen, sulfur, selenium, tellurium, and mixtures thereof. P-type dopants include, but are not limited to, nitrogen, phosphorus, arsenic, antimony, bismuth, copper, chalcogenides of the foregoing, and mixtures thereof.

Abstract translation: 公开了一种持续性p型II-VI族半导体材料。 II-VI族半导体包括11族元素​​的原子，VI族元素的原子和一种或多种p型掺杂剂。 p型掺杂剂浓度足以使II-VI族半导体材料成为单晶形式。 半导体电阻率小于约0.5欧姆 - 厘米，载流子迁移率大于约0.1厘米2 / V·s。 II族元素包括锌，镉，碱土金属如铍，镁钙，锶和钡，及其混合物。第Ⅵ族元素包括氧，硫，硒，碲及其混合物。 P型掺杂剂包括但不限于上述的氮，磷，砷，锑，铋，铜，硫族化物，及其混合物。

公开(公告)号：WO2004105098A2

公开(公告)日：2004-12-02

申请号：PCT/US2004/015883

申请日：2004-05-20

Applicant: BURGENER, Robert, H., II ,  FELIX, Roger, L. ,  RENLUND, Gary, M.

Inventor： BURGENER, Robert, H., II ,  FELIX, Roger, L. ,  RENLUND, Gary, M.

IPC: H01L

CPC classification number: H01L33/285 ,  C30B23/02 ,  C30B25/02 ,  C30B29/48 ,  H01L21/0237 ,  H01L21/02554 ,  H01L21/02557 ,  H01L21/02579 ,  H01L21/02628 ,  H01L21/02631 ,  H01L29/22 ,  H01L29/225 ,  H01L29/227

Abstract: A persistent p-type group II-VI semiconductor material is disclosed. The group II-VI semiconductor includes atoms of group 11 elements, atoms of group VI elements, and one or more p-type dopants. The p-type dopant concentration is sufficient to render the group II-VI semiconductor material in a single crystal form. The semiconductor resistivity is less than about 0.5 ohm-cm, and the carrier mobility is greater than about 0.1 CM 2 /V⋅s. Group II elements include zinc, cadmium, the alkaline earth metals such as beryllium, magnesium calcium, strontium, and barium, and mixtures thereof Group VI elements include oxygen, sulfur, selenium, tellurium, and mixtures thereof. P-type dopants include, but are not limited to, nitrogen, phosphorus, arsenic, antimony, bismuth, copper, chalcogenides of the foregoing, and mixtures thereof.

Abstract translation: 公开了一种持续性p型II-VI族半导体材料。 II-VI族半导体包括11族元素​​的原子，VI族元素的原子和一种或多种p型掺杂剂。 p型掺杂剂浓度足以使II-VI族半导体材料成为单晶形式。 半导体电阻率小于约0.5欧姆 - 厘米，载流子迁移率大于约0.1厘米2 / V·s。 II族元素包括锌，镉，碱土金属如铍，镁钙，锶和钡，及其混合物。第Ⅵ族元素包括氧，硫，硒，碲及其混合物。 P型掺杂剂包括但不限于上述的氮，磷，砷，锑，铋，铜，硫族化物，及其混合物。

公开(公告)号：WO2004104274A2

公开(公告)日：2004-12-02

申请号：PCT/US2004/015881

申请日：2004-05-20

Applicant: BURGENER, Robert, H., II ,  FELIX, Roger, L. ,  RENLUND, Gary, M.

Inventor： BURGENER, Robert, H., II ,  FELIX, Roger, L. ,  RENLUND, Gary, M.

IPC: C30B

CPC classification number: C30B25/00 ,  C30B29/16 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/02631

Abstract: A zinc oxide crystal growth substrate is disclosed. The zinc oxide crystal growth substrate includes a thin layer of single crystal zinc oxide deposited on an self supporting substrate surface by a chemical deposition process. The chemical deposition process is selected from RF sputtering, CVD (chemical vapor deposition), MOCVD (metal organic chemical vapor deposition), spin coating, electrophoresis, and hydrothermal growth processes. The self supporting substrate may be amorphous, polycrystalline, or crystalline. The thin layer of zinc oxide has a crystal lattice which permits the crystal growth of a crystal compatible with zinc oxide. The compatible crystal has a lattice parameter within about 5% of a corresponding lattice parameter of the zinc oxide.

Abstract translation: 公开了一种氧化锌晶体生长衬底。 氧化锌晶体生长衬底包括通过化学沉积工艺沉积在自支撑衬底表面上的单层氧化锌薄层。 化学沉积工艺选自RF溅射，CVD（化学气相沉积），MOCVD（金属有机化学气相沉积），旋涂，电泳和水热生长过程。 自支撑衬底可以是无定形的，多晶的或结晶的。 氧化锌薄层具有允许与氧化锌相容的晶体的晶体生长的晶格。 相容的晶体具有在氧化锌的相应晶格参数的约5％内的晶格参数。

公开(公告)号：WO2005010120A3

公开(公告)日：2009-04-09

申请号：PCT/US2004004569

申请日：2004-02-17

Applicant: BURGENER ROBERT H II ,  FELIX ROGER L ,  RENLUND GARY M

Inventor： BURGENER ROBERT H II ,  FELIX ROGER L ,  RENLUND GARY M

IPC: G02F2/02 ,  C09K20060101 ,  H01S3/00 ,  H01S3/10 ,  H01S3/102 ,  H01S3/16

CPC classification number: H01S3/16 ,  H01S3/102 ,  H01S3/1022 ,  H01S3/1603 ,  H01S3/1691

Abstract: Up-conversion and down-conversion photo-luminescence in rare earth compounds are disclosed. Broadband, super-radiant, and discrete line emissions are observed. The rare earth compounds include a rare earth element and at least one other element selected from chalcogens, halogens, nitrogen, and phosphorus. The rare earth compounds include, but are not limited to, rare earth oxides, fluorides, and oxyfluorides. Doping and co-doping of rare earth compounds in an optical host material is not required. The compounds are irradiated with incident light having an incident wavelength that is selected to be highly absorbed by the rare earth compound. The up-conversion and down-conversion luminescence have been observed which may be caused by unknown electron transitions, particularly in the case of ytterbia.

Abstract translation: 公开了稀土化合物中的上转换和下转换光发光。 观察到宽带，超辐射和离散线路排放。 稀土化合物包括稀土元素和至少一种选自硫属，卤素，氮和磷的其它元素。 稀土化合物包括但不限于稀土氧化物，氟化物和氟氧化物。 不需要在光学主体材料中掺杂和共掺杂稀土化合物。 用入射波长的入射光照射化合物，该入射光被选择为被稀土化合物高度吸收。 已经观察到上转换和下转换发光，其可能由未知的电子跃迁引起，特别是在镱的情况下。