公开(公告)号：WO2018222487A8

公开(公告)日：2018-12-06

申请号：PCT/US2018/034317

申请日：2018-05-24

Applicant: MACDERMID ENTHONE INC.

Inventor： SANTOS, Cherry, S. ,  BANKER, Tyler ,  SWANSON, John ,  XU, Fengting ,  LONG, Ernest

IPC: C23C16/448 ,  C23C18/54

Abstract: Upon use of an immersion tin plating solution, contaminants build in the solution, which cause the plating rate and the quality of the plated deposit to decrease. One primary contaminant, which builds in the plating solution upon use, is hydrogen sulfide, H 2 S. If a gas is bubbled or blown through the solution, contaminants, especially hydrogen sulfide, can be effectively removed from the solution and, as a result, the high plating rate and plate quality can be restored or maintained. In this regard, any gas can be used, however, it is preferable to use a gas that will not detrimentally interact with the solution, other than to strip out contaminants. Nitrogen is particularly preferred for this purpose because it is efficient at stripping out contaminants, including hydrogen sulfide, but does not induce the oxidation of the tin ions from their divalent state to the tetravalent state, which is detrimental.

公开(公告)号：WO2018057590A1

公开(公告)日：2018-03-29

申请号：PCT/US2017/052449

申请日：2017-09-20

Applicant: MACDERMID ENTHONE INC.

Inventor： RICAHRDSON, Thomas ,  WHITTEN, Kyle ,  PANECCASIO, Vincent, Jr. ,  COMMANDER, John ,  HURTUBISE, Richard

IPC: C07C333/20 ,  C07D213/04 ,  C25D3/38 ,  C25D5/02 ,  H01L21/768

Abstract: An electrodeposition composition comprising: (a) a source of copper ions; (b) an acid; (c) a suppressor; and (d) a leveler, wherein the leveler comprises a quaternized dipyridyl compound prepared by reacting a dipyridyl compound with a difunctional alkylating agent or a quaternized poly(epihalohydrin). The electrodeposition composition can be used in a process for forming a copper feature over a semiconductor substrate in wafer level packaging to electrodeposit a copper bump or pillar on an underbump structure of a semiconductor assembly.

Abstract translation: 电沉积组合物，其包含：（a）铜离子源; （b）酸; （c）抑制者; （d）整平剂，其中整平剂包含通过使联吡啶化合物与双官能烷基化剂或季化聚（表卤代醇）反应制备的季化联吡啶化合物。 该电沉积组合物可用于在晶片级封装中在半导体衬底上形成铜特征以在半导体组件的下凸点结构上电沉积铜凸块或柱的工艺中。

公开(公告)号：WO2016116876A1

公开(公告)日：2016-07-28

申请号：PCT/IB2016/050277

申请日：2016-01-20

Applicant: ENTHONE INC.

Inventor： RIETMANN, Christian ,  GLÖCKNER, Andreas

IPC: C09D5/44 ,  C25D5/56

CPC classification number: C09D5/44 ,  C25D3/38 ,  C25D5/02 ,  C25D5/56 ,  H05K3/423 ,  H05K3/426 ,  H05K2201/0329

Abstract: The invention relates to a composition and a process for the deposition of conductive polymers on dielectric substrates. In particular, the invention relates to a composition for the formation of electrically conductive polymers on the surface of a dielectric substrate, the composition comprising at least one polymerizable monomer which is capable to form a conductive polymer, an emulsifier and an acid, characterized in that the composition comprises at least one metal-ion selected from the group consisting of lithium-ions, sodium-ions, aluminum-ions, beryllium-ions, bismuth-ions, boron-ions, indium-ions and alkyl imidazolium-ions. The acid is typically a high molecular weight polymeric acid having molecular weight of at least 500,000 Da including, for example, polystyrene sulfonic acid having a molecular weight of approximately 1,000,000 Da.

Abstract translation: 本发明涉及用于在电介质基底上沉积导电聚合物的组合物和方法。 特别地，本发明涉及用于在电介质基底的表面上形成导电聚合物的组合物，该组合物包含至少一种可形成导电聚合物，乳化剂和酸的可聚合单体，其特征在于， 所述组合物包含选自锂离子，钠离子，铝离子，铍离子，铋离子，硼离子，铟离子和烷基咪唑鎓离子中的至少一种金属离子。 酸通常是分子量至少为500,000Da的高分子量聚合酸，包括例如分子量约为1,000,000Da的聚苯乙烯磺酸。

公开(公告)号：WO2015023295A1

公开(公告)日：2015-02-19

申请号：PCT/US2013/055368

申请日：2013-08-16

Applicant: ENTHONE INC.

Inventor： OWEI, Abayomi, I. ,  ABYS, Joseph, A. ,  ANTONELLIS, Theodore ,  WALCH, Eric

IPC: H05K3/38 ,  C23F1/18 ,  C23F11/14

CPC classification number: H05K3/383 ,  C23F1/18 ,  H05K3/389 ,  H05K2203/0392 ,  H05K2203/0793 ,  H05K2203/124

Abstract: Compositions and methods for enhancing adhesion between a copper conducting layer and a dielectric material during manufacture of a printed circuit board. Conditioning compositions contain a functional organic compound and preferably a transition metal ion. The functional organic compound, e.g., a purine derivative, is capable of forming a self-assembled monolayer. Adhesion promoting compositions contain an acid, preferably an inorganic acid, and an oxidant. The latter compositions may also contain a corrosion inhibitor and/or a transition metal ion selected from among Zn, Ni, Co, Cu, Ag, Au, Pd or another Pt group metal. The corrosion inhibitor may comprise a nitrogen-containing aromatic heterocyclic compound.

Abstract translation: 用于在制造印刷电路板期间增强铜导电层和电介质材料之间的粘附性的组合物和方法。 调理组合物含有功能性有机化合物，优选过渡金属离子。 功能性有机化合物，例如嘌呤衍生物，能够形成自组装单层。 粘合促进组合物含有酸，优选无机酸和氧化剂。 后一种组合物还可以含有选自Zn，Ni，Co，Cu，Ag，Au，Pd或其它Pt族金属中的腐蚀抑制剂和/或过渡金属离子。 腐蚀抑制剂可以包含含氮芳族杂环化合物。

公开(公告)号：WO2010062822A2

公开(公告)日：2010-06-03

申请号：PCT/US2009/065053

申请日：2009-11-19

Applicant: ENTHONE INC. ,  PANECCASIO, Vincent ,  LIN, Xuan ,  HURTUBISE, Richard ,  CHEN, Qingyun

Inventor： PANECCASIO, Vincent ,  LIN, Xuan ,  HURTUBISE, Richard ,  CHEN, Qingyun

IPC: C25D3/38 ,  C25D7/12 ,  H01L21/288

CPC classification number: H01L21/76879 ,  C25D3/38 ,  C25D5/02 ,  C25D7/12 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76877 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for metallizing a via feature in a semiconductor integrated circuit device substrate, wherein the semiconductor integrated circuit device substrate comprises a front surface, a back surface, and the via feature and wherein the via feature comprises an opening in the front surface of the substrate, a sidewall extending from the front surface of the substrate inward, and a bottom. The method comprises contacting the semiconductor integrated circuit device substrate with an electrolytic copper deposition chemistry comprising (a) a source of copper ions and (b) a leveler compound, wherein the leveler compound is a reaction product of a dipyridyl compound and an alkylating agent; and supplying electrical current to the electrolytic deposition chemistry to deposit copper metal onto the bottom and sidewall of the via feature, thereby yielding a copper filled via feature.

Abstract translation: 一种用于金属化半导体集成电路器件基板中的通孔特征的方法，其中所述半导体集成电路器件基板包括前表面，后表面和通孔特征，并且其中所述通孔特征包括在所述基板的前表面中的开口 ，从基板的前表面向内延伸的侧壁和底部。 该方法包括使半导体集成电路器件衬底与包含（a）铜离子源和（b）矫光剂化合物的电解铜沉积化学物质接触，其中矫光剂化合物是二吡啶基化合物和烷化剂的反应产物; 并向电解沉积化学物质提供电流以将铜金属沉积到通孔特征的底部和侧壁上，从而产生铜填充的通孔特征。

公开(公告)号：WO2009076430A1

公开(公告)日：2009-06-18

申请号：PCT/US2008/086210

申请日：2008-12-10

Applicant: ENTHONE INC. ,  ABYS, Joseph, A. ,  KUDRAK, Edward, J., Jr. ,  LI, Jingye ,  XU, Chen ,  FAN, Chonglun

Inventor： ABYS, Joseph, A. ,  KUDRAK, Edward, J., Jr. ,  LI, Jingye ,  XU, Chen ,  FAN, Chonglun

IPC: C25D9/02 ,  C25D3/00 ,  C25D19/00

CPC classification number: C25D15/02 ,  C25D3/02 ,  C25D15/00

Abstract: A method is provided for imparting corrosion resistance onto a surface of a substrate. The method comprises contacting the surface of the substrate with an electrolytic plating solution comprising (a) a source of deposition metal ions of a deposition metal selected from the group consisting of zinc, palladium, silver, nickel, copper, gold, platinum, rhodium, ruthenium, chrome, and alloys thereof, (b) a pre-mixed dispersion of non-metallic nano-particles, wherein the non-metallic particles have a pre-mix coating of surfactant molecules thereon; and applying an external source of electrons to the electrolytic plating solution to thereby electrolytically deposit a metal-based composite coating comprising the deposition metal and non-metallic nano-particles onto the surface.

Abstract translation: 提供了一种赋予衬底表面的耐腐蚀性的方法。 该方法包括使基板的表面与电解电镀溶液接触，所述电解电镀溶液包括（a）选自锌，钯，银，镍，铜，金，铂，铑等的沉积金属的沉积金属离子源， 钌，铬及其合金，（b）非金属纳米颗粒的预混合分散体，其中所述非金属颗粒在其上具有表面活性剂分子的预混合涂层; 以及将外部电子源施加到所述电解电镀溶液中，从而将包含所述沉积金属和非金属纳米颗粒的金属基复合涂层电沉积到所述表面上。

公开(公告)号：WO2009076424A1

公开(公告)日：2009-06-18

申请号：PCT/US2008/086203

申请日：2008-12-10

Applicant: ENTHONE INC. ,  ABYS, Joseph, A. ,  LI, Jingye ,  KUDRAK, Edward, J., Jr. ,  XU, Chen

Inventor： ABYS, Joseph, A. ,  LI, Jingye ,  KUDRAK, Edward, J., Jr. ,  XU, Chen

IPC: C25D7/06 ,  H01L21/44 ,  B05D1/36

CPC classification number: C25D15/02 ,  C25D3/30 ,  H01R13/03

Abstract: There is provided a method and composition for applying a composite coating having enhanced resistance to tin whisker formation onto a metal surface of an electrical component. The method comprises contacting the metal surface with an electrolytic plating composition comprising (a) a source of tin ions and (b) non-metallic particles, and applying an external source of electrons to the electrolytic plating composition to thereby electrolytically deposit the composite coating onto the metal surface, wherein the composite coating comprises tin metal and the non-metallic particles.

Abstract translation: 提供了一种用于将具有增强的耐锡晶须形成的复合涂层施加到电气部件的金属表面上的方法和组合物。 该方法包括使金属表面与包含（a）锡离子源和（b）非金属颗粒的电解电镀组合物接触，并将外部电子源施加到电解镀覆组合物，从而将复合涂层电解沉积到 金属表面，其中复合涂层包括锡金属和非金属颗粒。

公开(公告)号：WO2008049019A2

公开(公告)日：2008-04-24

申请号：PCT/US2007/081671

申请日：2007-10-17

Applicant: ENTHONE INC. ,  LIN, Xuan ,  HURTUBISE, Richard ,  PANECCASIO, Vincent ,  CHEN, Qingyun

Inventor： LIN, Xuan ,  HURTUBISE, Richard ,  PANECCASIO, Vincent ,  CHEN, Qingyun

IPC: H01L21/44

CPC classification number: H01L21/288 ,  C23C18/1608 ,  C23C18/1653 ,  C23C18/1879 ,  C23C18/1896 ,  C23C18/40 ,  C23C18/405 ,  C25D5/02 ,  C25D5/48 ,  C25D5/54 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76877 ,  H01L21/76879

Abstract: A method for plating copper onto a semiconductor integrated circuit device substrate by forming an initial metal deposit in the feature which has a profile comprising metal on the bottom of the feature and a segment of the sidewalls having essentially no metal thereon, electrolessly depositing copper onto the initial metal deposit to fill the feature with copper. A method for plating copper onto a semiconductor integrated circuit device substrate by forming a deposit comprising a copper wettable metal in the feature, forming a copper-based deposit on the top-field surface, and depositing copper onto the deposit comprising the copper wettable metal to fill the feature with copper.

Abstract translation: 通过在所述特征中形成初始金属沉积物来将铜电镀到半导体集成电路器件衬底上的方法，所述特征在所述特征的底部具有包括金属的轮廓，并且所述侧壁的一部分基本上不具有 金属，将铜无电沉积到初始金属沉积物上以用铜填充该特征。 一种通过在特征中形成包括铜可湿润金属的沉积物，在顶部表面上形成铜基沉积物，并且将铜沉积到包含铜可湿润金属的沉积物上来将铜电镀到半导体集成电路装置基底上的方法， 用铜填充此功能。

公开(公告)号：WO2008043528A2

公开(公告)日：2008-04-17

申请号：PCT/EP2007/008780

申请日：2007-10-09

Applicant: ENTHONE INC. ,  SCHÄFER. Stefan ,  RICHARDSON, Thomas

Inventor： SCHÄFER. Stefan ,  RICHARDSON, Thomas

IPC: C25D3/46

CPC classification number: C25D3/46

Abstract: Die vorliegende Erfindung betrifft eine cyanidfreie Elektrolytzusammensetzung zur Abscheidung einer Silber- oder Silberlegierungsschicht auf einem Substrat. Darüber hinaus betrifft die vorliegende Erfindung ein Verfahren zur Abscheidung solcher Schichten unter Verwendung der erfindungsgemäßen cyanidfreien Elektrolytzusammensetzung. Die erfindungsgemäße Elektrolytzusammensetzung weist wenigstens eine Silberionenquelle, eine Sulfonsäure und/oder ein Derivat einer Sulfonsäure, ein Netzmittel sowie ein Hydantoin auf. Die aus einer solchen Elektrolytzusammensetzung mittels des erfindungsgemäßen Verfahrens abgeschiedenen Silber- oder Silberlegierungsschichten sind matt und duktil.

Abstract translation: 本发明涉及一种不含氰化物的电解质组合物用于在基材上沉积银或银合金层。 此外，本发明涉及一种用于根据本发明使用的无氰电解液组合物沉积这样的层的方法。 根据本发明的电解质组合物包括银离子中的至少一个源，磺酸和/或磺酸，润湿剂和乙内酰脲的衍生物。 从这样的组合物电解通过本发明的方法的银或银合金层是无光泽和韧性的沉积。

公开(公告)号：WO2008029376A2

公开(公告)日：2008-03-13

申请号：PCT/IB2007/053617

申请日：2007-09-07

Applicant: ENTHONE INC. ,  LACHOWICZ, Agata ,  GLÖCKNER, Andreas

Inventor： LACHOWICZ, Agata ,  GLÖCKNER, Andreas

IPC: C25D5/54 ,  C25D5/56 ,  C25D3/38 ,  H05K3/42

CPC classification number: C25D5/56 ,  C09D5/24 ,  C09D5/4476 ,  C09D5/4484 ,  C25D3/38 ,  H05K3/424 ,  H05K3/427 ,  H05K2201/0329

Abstract: A process is provided for metallizing a surface of a substrate with electrolytically plated copper metallization, the process comprising electrolytically depositing copper over the electrically conductive polymer by immersing the substrate in an electrolytic composition and applying an external source of electrons, wherein the electrolytic composition comprises a source of copper ions and has a pH between about 0.5 and about 3.5. In another aspect, a process is provided for metallizing a surface of a dielectric substrate with electrolytically plated copper metallization, the process comprising immersing the substrate into a catalyst composition comprising a precursor for forming an electrically conductive polymer on the surface of the dielectric substrate and a source of Mn (II) ions in an amount sufficient to provide an initial concentration of Mn (II) ions of at least about 0.1 g/L to form an electrically conductive polymer on the surface of the dielectric substrate, and electrolytically depositing copper over said electrically conductive polymer.

Abstract translation: 提供了一种用电镀铜金属化金属化衬底的表面的方法，该方法包括通过将衬底浸入电解组合物中并施加外部电子源在导电聚合物上电解沉积铜，其中电解组合物包含 铜离子源，pH约在0.5至约3.5之间。 在另一方面，提供了一种用电解铜镀金属化金属化电介质基片的表面的方法，该方法包括将基底浸入包含用于在电介质基底表面上形成导电聚合物的前体的催化剂组合物和 Mn（II）离子源，其量足以提供至少约0.1g / L的Mn（II）离子的初始浓度，以在介电衬底的表面上形成导电聚合物，并在所述电介质衬底的表面上电解沉积铜 导电聚合物。