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    SEMICONDUCTOR STRUCTURE MADE USING IMPROVED PSEUDO-SIMULTANEOUS MULTIPLE ION IMPLANTATION PROCESS
    3.
    发明申请
    SEMICONDUCTOR STRUCTURE MADE USING IMPROVED PSEUDO-SIMULTANEOUS MULTIPLE ION IMPLANTATION PROCESS 审中-公开
    使用改进的PSEUDO同时多次离子植入过程的半导体结构

    公开(公告)号：WO2012068322A1

    公开(公告)日：2012-05-24

    申请号：PCT/US2011/061106

    申请日：2011-11-17

    Applicant: CORNING INCORPORATED ,  CHEREKDJIAN, Sarko

    Inventor： CHEREKDJIAN, Sarko

    IPC: H01J37/30 ,  H01J37/317 ,  H01L21/762

    CPC classification number: H01J37/3007 ,  H01J37/3171 ,  H01J2237/0825 ,  H01J2237/20 ,  H01L21/76254

    Abstract: Methods and apparatus provide for: a source (152) simultaneously producing first plasma, which includes a first species of ions, and second plasma, which includes a second, differing, species of ions; an accelerator system (170) including an analyzer magnet (180), which cooperate to simultaneously: (i) accelerate the first and second species of ions from the first and second plasma along an initial axis (A0), (ii) alter a trajectory of the first species of ions from the first plasma, thereby producing at least one first ion beam along a first axis (A1), which is transverse to the initial axis, and (iii) alter a trajectory of the second species of ions from the second plasma, thereby producing at least one second ion beam along a second axis (A2), which is transverse to the initial axis and the first axis; and a beam processing system (250) operating to simultaneously direct the first and second ion beams toward a semiconductor wafer (120) such that the first and second species of ions bombard an implantation surface (121) of the semiconductor wafer to create an exfoliation layer (122) therein.

    Abstract translation: 方法和装置提供：源（152）同时产生包括第一种离子的第一等离子体和包括第二不同种类的离子的第二等离子体; 包括分析器磁体（180）的加速器系统（170），其协同同时地：（i）沿初始轴线（A0）加速来自第一和第二等离子体的第一和第二种离子，（ii）改变轨迹 的来自第一等离子体的第一种离子，从而沿着与初始轴横切的第一轴线（A1）产生至少一个第一离子束，和（iii）改变来自第一离子的离子的轨迹 从而沿着与初始轴线和第一轴线横切的第二轴线（A2）产生至少一个第二离子束; 以及光束处理系统（250），其操作以同时将第一和第二离子束朝向半导体晶片（120）引导，使得第一和第二种离子轰击半导体晶片的注入表面（121）以产生剥离层 （122）。

    IMPROVED SIMULTANEOUS MULTIPLE ION IMPLANTATION PROCESS AND APPARATUS SEMICONDUCTOR STRUCTURE MADE USING SAME
    7.
    发明申请
    IMPROVED SIMULTANEOUS MULTIPLE ION IMPLANTATION PROCESS AND APPARATUS SEMICONDUCTOR STRUCTURE MADE USING SAME 审中-公开
    改进的同时多次离子植入工艺和使用其的装置半导体结构

    公开(公告)号：WO2012068039A1

    公开(公告)日：2012-05-24

    申请号：PCT/US2011/060682

    申请日：2011-11-15

    Applicant: CORNING INCORPORATED ,  CHEREKDJIAN, Sarko

    Inventor： CHEREKDJIAN, Sarko

    IPC: H01J37/317 ,  H01J37/30 ,  H01L21/265

    CPC classification number: H01L21/26506 ,  H01J37/3007 ,  H01J37/3171 ,  H01L21/26566 ,  H01L21/2658

    Abstract: Methods and apparatus provide for: a first source of plasma (first plasma 152A), which includes a first species of ions, directing the first plasma out along a first axis; a second source of plasma (second plasma 152B), which includes a second, differing, species of ions, directing the second plasma out along a second axis; and an accelerator system (170) in communication with the first and second sources of plasma, and operating to: (i) accelerate the first species of ions at a first magnitude therethrough, and toward a semiconductor wafer, and (ii) simultaneously accelerate the second species of ions at a second magnitude, different from the first magnitude, therethrough, and toward the semiconductor wafer (120).

    Abstract translation: 方法和装置提供：第一等离子体源（第一等离子体152A），其包括第一种离子，沿第一轴引导第一等离子体; 第二等离子体源（第二等离子体152B），其包括第二不同种类的离子，沿第二轴引导第二等离子体; 以及加速器系统（170），其与所述第一和第二等离子体源连通，并且操作为：（i）以第一大小加速所述第一种离子并且朝向半导体晶片，并且（ii）同时加速 第二种离子的第二种类，不同于第一大小，穿过其中，朝向半导体晶片（120）。

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