公开(公告)号：WO2015099734A1

公开(公告)日：2015-07-02

申请号：PCT/US2013/077813

申请日：2013-12-26

Applicant: INTEL CORPORATION ,  FARMER, Jason A. ,  LEIB, Jeffrey, S. ,  BERGSTROM, Daniel, B.

Inventor： FARMER, Jason A. ,  LEIB, Jeffrey, S. ,  BERGSTROM, Daniel, B.

IPC: H01L21/205

CPC classification number: H01L21/76856 ,  H01L21/28088 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76867 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/53266 ,  H01L29/517

Abstract: An aspect of the present disclosure relates to a method of forming a barrier layer on a semiconductor device. The method includes placing a substrate into a reaction chamber and depositing a barrier layer over the substrate. The barrier layer includes a metal and a non-metal and the barrier layer exhibits an as-deposited thickness of 4 nm or less. The method further includes densifying the barrier layer by forming plasma from a gas proximate to said barrier layer and reducing the thickness and increasing the density of the barrier layer. In embodiments, during densification 300 Watts or less of power is applied to the plasma at a frequency of 350 kHz to 40 MHz.

Abstract translation: 本公开的一个方面涉及在半导体器件上形成阻挡层的方法。 该方法包括将衬底放置在反应室中并在衬底上沉积阻挡层。 阻挡层包括金属和非金属，并且阻挡层表现出4nm或更小的沉积厚度。 该方法还包括通过从靠近所述阻挡层的气体形成等离子体并减小厚度并增加阻挡层的密度来致密化阻挡层。 在实施例中，在致密化期间，以等于350kHz至40MHz的频率向等离子体施加300瓦或更小的功率。

公开(公告)号：WO2015099789A1

公开(公告)日：2015-07-02

申请号：PCT/US2013/078118

申请日：2013-12-27

Applicant: INTEL CORPORATION ,  FARMER, Jason, A. ,  TRICHY, Gopinath ,  SANDFORD, Justin ,  BERGSTROM, Daniel, B.

Inventor： FARMER, Jason, A. ,  TRICHY, Gopinath ,  SANDFORD, Justin ,  BERGSTROM, Daniel, B.

IPC: H01L21/3065

CPC classification number: H01L21/31116 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/66795 ,  H01L29/7851

Abstract: Technologies for selectively etching oxide and nitride materials on a work piece are described. Such technologies include methods for etching a work piece with a remote plasma that is produced by igniting a plasma gas flow. By controlling the flow rate of various components of the plasma gas flow, plasmas exhibiting desired etching characteristics may be obtained. Such plasmas may be used in single or multistep etching operations, such as recess etching operations that may be used in the production of non-planar microelectronic devices.

Abstract translation: 描述了在工件上选择性地蚀刻氧化物和氮化物材料的技术。 这种技术包括用通过点燃等离子体气体流产生的远程等离子体蚀刻工件的方法。 通过控制等离子体气体流的各种成分的流量，可以获得显示期望的蚀刻特性的等离子体。 这种等离子体可以用于单次或多步蚀刻操作，例如可用于生产非平面微电子器件的凹陷蚀刻操作。