公开(公告)号：WO2011008401A1

公开(公告)日：2011-01-20

申请号：PCT/US2010/038923

申请日：2010-06-17

Applicant: GLOBALFOUNDRIES INC. ,  CARTER, Richard ,  GRAETSCH, Falk ,  TRENTZSCH, Martin ,  BEYER, Sven ,  REIMER, Berthold ,  BINDER, Robert ,  BAYAH, Boris

Inventor： CARTER, Richard ,  GRAETSCH, Falk ,  TRENTZSCH, Martin ,  BEYER, Sven ,  REIMER, Berthold ,  BINDER, Robert ,  BAYAH, Boris

IPC: H01L21/28 ,  H01L21/336 ,  H01L29/49 ,  H01L29/51 ,  H01L21/8238

CPC classification number: H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/82345 ,  H01L21/823462 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6659

Abstract: Sophisticated gate electrode structures (235 A, 235B) for N-channel transistors and P-channel transistors are patterned on the basis of substantially the same configuration while, nevertheless, the work function adjustment may be accomplished in an early manufacturing stage. For this purpose, diffusion layer and cap layer materials are removed after incorporating the desired work function metal species into the high-k dielectric material (212) and subsequently a common gate layer stack is deposited and subsequently patterned.

Abstract translation: 在基本上相同的结构的基础上对用于N沟道晶体管和P沟道晶体管的复杂的栅电极结构（235A，235B）进行构图，然而，可以在早期制造阶段中完成功函数调整。 为此，在将期望的功函数金属物质并入高k介电材料（212）中之后，去除扩散层和覆盖层材料，随后沉积公共栅层堆叠并随后构图。

公开(公告)号：WO2005098929A2

公开(公告)日：2005-10-20

申请号：PCT/US2005/010475

申请日：2005-03-29

Applicant: ADVANCED MICRO DEVICES, INC. ,  LENSKI, Markus ,  GRAETSCH, Falk ,  REICHEL, Carsten ,  SCHWAN, Christoph ,  BIERSTEDT, Helmut ,  KAMMLER, Thorsten ,  MAZUR, Martin

Inventor： LENSKI, Markus ,  GRAETSCH, Falk ,  REICHEL, Carsten ,  SCHWAN, Christoph ,  BIERSTEDT, Helmut ,  KAMMLER, Thorsten ,  MAZUR, Martin

IPC: H01L21/336

CPC classification number: H01L21/28247 ,  H01L21/28123 ,  H01L29/66492 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659

Abstract: The present invention allows the formation of sidewall spacers (217,218) adjacent a feature (206) on a substrate (201) without there being an undesirable erosion of the feature. The feature (206) is covered by one or more protective layers (220,207). A layer of a spacer material (211) is deposited over the feature (206) and etched anisotropically. An etchant used in the anisotropic etching is adapted to selectively remove the spacer material, whereas the one or more protective layers (220, 207) are substantially not affected by the etchant. Thus, the one or more protective layers (220, 207) protect the feature from being exposed to the etchant.

Abstract translation: 本发明允许在衬底（201）上邻近特征（206）形成侧壁间隔物（217,218），而不会有不希望的特征侵蚀。 特征（206）由一个或多个保护层（220,207）覆盖。 隔离材料层（211）沉积在特征（206）上并各向异性地蚀刻。 在各向异性蚀刻中使用的蚀刻剂适于选择性地去除间隔物材料，而一个或多个保护层（220,207）基本上不受蚀刻剂的影响。 因此，一个或多个保护层（220,207）保护特征不暴露于蚀刻剂。

公开(公告)号：WO2005098929A3

公开(公告)日：2005-12-15

申请号：PCT/US2005010475

申请日：2005-03-29

Applicant: ADVANCED MICRO DEVICES INC ,  LENSKI MARKUS ,  GRAETSCH FALK ,  REICHEL CARSTEN ,  SCHWAN CHRISTOPH ,  BIERSTEDT HELMUT ,  KAMMLER THORSTEN ,  MAZUR MARTIN

Inventor： LENSKI MARKUS ,  GRAETSCH FALK ,  REICHEL CARSTEN ,  SCHWAN CHRISTOPH ,  BIERSTEDT HELMUT ,  KAMMLER THORSTEN ,  MAZUR MARTIN

IPC: H01L21/28 ,  H01L21/336

CPC classification number: H01L21/28247 ,  H01L21/28123 ,  H01L29/66492 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659

Abstract: The present invention allows the formation of sidewall spacers (217,218) adjacent a feature (206) on a substrate (201) without there being an undesirable erosion of the feature. The feature (206) is covered by one or more protective layers (220,207). A layer of a spacer material (211) is deposited over the feature (206) and etched anisotropically. An etchant used in the anisotropic etching is adapted to selectively remove the spacer material, whereas the one or more protective layers (220, 207) are substantially not affected by the etchant. Thus, the one or more protective layers (220, 207) protect the feature from being exposed to the etchant.

Abstract translation: 本发明允许在衬底（201）上形成与特征（206）相邻的侧壁间隔物（217,218），而不会对该特征造成不希望的腐蚀。 特征（206）被一个或多个保护层（220,207）覆盖。 在特征（206）上沉积一层间隔材料（211）并各向异性蚀刻。 用于各向异性蚀刻的蚀刻剂适于选择性地去除间隔物材料，而一个或多个保护层（220,207）基本上不受蚀刻剂的影响。 因此，一个或多个保护层（220,207）保护该特征免于暴露于蚀刻剂。