公开(公告)号：WO2005098929A3

公开(公告)日：2005-12-15

申请号：PCT/US2005010475

申请日：2005-03-29

Applicant: ADVANCED MICRO DEVICES INC ,  LENSKI MARKUS ,  GRAETSCH FALK ,  REICHEL CARSTEN ,  SCHWAN CHRISTOPH ,  BIERSTEDT HELMUT ,  KAMMLER THORSTEN ,  MAZUR MARTIN

Inventor： LENSKI MARKUS ,  GRAETSCH FALK ,  REICHEL CARSTEN ,  SCHWAN CHRISTOPH ,  BIERSTEDT HELMUT ,  KAMMLER THORSTEN ,  MAZUR MARTIN

IPC: H01L21/28 ,  H01L21/336

CPC classification number: H01L21/28247 ,  H01L21/28123 ,  H01L29/66492 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659

Abstract: The present invention allows the formation of sidewall spacers (217,218) adjacent a feature (206) on a substrate (201) without there being an undesirable erosion of the feature. The feature (206) is covered by one or more protective layers (220,207). A layer of a spacer material (211) is deposited over the feature (206) and etched anisotropically. An etchant used in the anisotropic etching is adapted to selectively remove the spacer material, whereas the one or more protective layers (220, 207) are substantially not affected by the etchant. Thus, the one or more protective layers (220, 207) protect the feature from being exposed to the etchant.

Abstract translation: 本发明允许在衬底（201）上形成与特征（206）相邻的侧壁间隔物（217,218），而不会对该特征造成不希望的腐蚀。 特征（206）被一个或多个保护层（220,207）覆盖。 在特征（206）上沉积一层间隔材料（211）并各向异性蚀刻。 用于各向异性蚀刻的蚀刻剂适于选择性地去除间隔物材料，而一个或多个保护层（220,207）基本上不受蚀刻剂的影响。 因此，一个或多个保护层（220,207）保护该特征免于暴露于蚀刻剂。

公开(公告)号：WO2006083546A3

公开(公告)日：2006-12-14

申请号：PCT/US2006001596

申请日：2006-01-17

Applicant: ADVANCED MICRO DEVICES INC ,  KAMMLER THORSTEN ,  WEI ANDY ,  BIERSTEDT HELMUT

Inventor： KAMMLER THORSTEN ,  WEI ANDY ,  BIERSTEDT HELMUT

IPC: H01L21/336 ,  H01L21/265 ,  H01L29/10 ,  H01L29/165 ,  H01L29/78

CPC classification number: H01L21/26586 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/78 ,  H01L29/7848

Abstract: By performing a sequence of selective epitaxial growth processes with at least two different species, or by introducing a first dopant species prior to the epitaxial growth of a drain and source region, a halo region may be formed in a highly efficient manner, while at the same time the degree of lattice damage in the epitaxially grown semiconductor region is maintained at a low level. The method of forming a first semiconductor region (211) by a first epitaxial growth process, forming a second semiconductor region (210) by performing a second epitaxial growth process, whereas the first and second semiconductor regions compose different dopant species.

Abstract translation: 通过用至少两种不同的物质执行选择性外延生长工艺的序列，或者通过在漏极和源极区域的外延生长之前引入第一掺杂剂物质，可以高效地形成卤素区域，而在 同时，外延生长的半导体区域的晶格损伤程度保持在较低的水平。 通过第一外延生长工艺形成第一半导体区域（211）的方法，通过执行第二外延生长工艺形成第二半导体区域（210），而第一和第二半导体区域构成不同的掺杂物质。

公开(公告)号：WO2006083546A2

公开(公告)日：2006-08-10

申请号：PCT/US2006/001596

申请日：2006-01-17

Applicant: ADVANCED MICRO DEVICES, INC. ,  KAMMLER, Thorsten ,  WEI, Andy ,  BIERSTEDT, Helmut

Inventor： KAMMLER, Thorsten ,  WEI, Andy ,  BIERSTEDT, Helmut

IPC: H01L21/336 ,  H01L29/78 ,  H01L29/165

CPC classification number: H01L21/26586 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/78 ,  H01L29/7848

Abstract: By performing a sequence of selective epitaxial growth processes with at least two different species, or by introducing a first dopant species prior to the epitaxial growth of a drain and source region, a halo region may be formed in a highly efficient manner, while at the same time the degree of lattice damage in the epitaxially grown semiconductor region is maintained at a low level. The method ??? forming a first semiconductor region 211 by a first epitaxial growth process, forming a second semiconductor region 210 by performing a second epitaxial growth process, whereas the first and second semiconductor regions compose different dopant species.

Abstract translation: 通过用至少两种不同的物质执行一系列选择性外延生长过程，或者通过在漏极和源极区的外延生长之前引入第一掺杂物种，可以以高效的方式形成晕圈，而在 同时，外延生长的半导体区域中的晶格损伤程度保持在低水平。 方法 ？？？ 通过第一外延生长工艺形成第一半导体区域211，通过执行第二外延生长工艺形成第二半导体区域210，而第一和第二半导体区域构成不同的掺杂物质。

公开(公告)号：WO2006118799A1

公开(公告)日：2006-11-09

申请号：PCT/US2006/014781

申请日：2006-04-19

Applicant: ADVANCED MICRO DEVICES, INC. ,  KAMMLER, Thorsten ,  BIERSTEDT, Helmut ,  LUNING, Scott, D.

Inventor： KAMMLER, Thorsten ,  BIERSTEDT, Helmut ,  LUNING, Scott, D.

IPC: H01L21/336 ,  H01L29/786 ,  H01L29/78 ,  H01L21/20

CPC classification number: H01L29/7833 ,  H01L21/0206 ,  H01L21/823814 ,  H01L29/6653 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/78621

Abstract: A first gate structure and a second gate structure are formed overlying a semiconductor substrate. A first protective layer is formed overlying the first gate structure and an associate source drain region. A first epitaxial layer is formed overlying the second source drain prior to removal of the first protective layer.

Abstract translation: 第一栅极结构和第二栅极结构形成在半导体衬底上。 第一保护层形成在第一栅极结构和相关源极漏极区之上。 在去除第一保护层之前，在第二源极漏极上形成第一外延层。

公开(公告)号：WO2005098929A2

公开(公告)日：2005-10-20

申请号：PCT/US2005/010475

申请日：2005-03-29

Applicant: ADVANCED MICRO DEVICES, INC. ,  LENSKI, Markus ,  GRAETSCH, Falk ,  REICHEL, Carsten ,  SCHWAN, Christoph ,  BIERSTEDT, Helmut ,  KAMMLER, Thorsten ,  MAZUR, Martin

Inventor： LENSKI, Markus ,  GRAETSCH, Falk ,  REICHEL, Carsten ,  SCHWAN, Christoph ,  BIERSTEDT, Helmut ,  KAMMLER, Thorsten ,  MAZUR, Martin

IPC: H01L21/336

CPC classification number: H01L21/28247 ,  H01L21/28123 ,  H01L29/66492 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659

Abstract: The present invention allows the formation of sidewall spacers (217,218) adjacent a feature (206) on a substrate (201) without there being an undesirable erosion of the feature. The feature (206) is covered by one or more protective layers (220,207). A layer of a spacer material (211) is deposited over the feature (206) and etched anisotropically. An etchant used in the anisotropic etching is adapted to selectively remove the spacer material, whereas the one or more protective layers (220, 207) are substantially not affected by the etchant. Thus, the one or more protective layers (220, 207) protect the feature from being exposed to the etchant.

Abstract translation: 本发明允许在衬底（201）上邻近特征（206）形成侧壁间隔物（217,218），而不会有不希望的特征侵蚀。 特征（206）由一个或多个保护层（220,207）覆盖。 隔离材料层（211）沉积在特征（206）上并各向异性地蚀刻。 在各向异性蚀刻中使用的蚀刻剂适于选择性地去除间隔物材料，而一个或多个保护层（220,207）基本上不受蚀刻剂的影响。 因此，一个或多个保护层（220,207）保护特征不暴露于蚀刻剂。