公开(公告)号：WO2008016818A2

公开(公告)日：2008-02-07

申请号：PCT/US2007/074397

申请日：2007-07-26

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  HOFFMAN, Randy ,  HERMAN, Gregory S.

Inventor： HOFFMAN, Randy ,  HERMAN, Gregory S.

IPC: H01L29/786 ,  H01L21/77

CPC classification number: H01L29/7869 ,  H01L27/1248 ,  H01L27/1292 ,  H01L29/78603

Abstract: A thin-film device includes a plurality of circuit components defining an operational region of the thin-film device, an unpatterned channel portion (108, 340) disposed on the plurality of circuit components, and a patterned passivation dielectric (380,385) selectively disposed on the unpatterned channel portion (108, 340) to electrically pattern an active region of the unpatterned channel portion (108,340).

Abstract translation: 薄膜器件包括限定薄膜器件的操作区域的多个电路元件，以及设置在该多个电路元件上的未图形化通道部分（108,340），以及选择性地设置在该薄膜器件上的图案化钝化电介质（380,385） 未图案化的通道部分（108,340），用于对未图案化的通道部分（108,340）的有源区域进行电图形化。

公开(公告)号：WO2007040759A1

公开(公告)日：2007-04-12

申请号：PCT/US2006/029321

申请日：2006-07-29

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  MARDILOVICH, Peter ,  HOFFMAN, Randy ,  HERMAN, Gregory S.

Inventor： MARDILOVICH, Peter ,  HOFFMAN, Randy ,  HERMAN, Gregory S.

IPC: H01L29/417 ,  H01L21/336 ,  H01L29/786

CPC classification number: H01L29/6675 ,  H01L29/41733 ,  H01L29/78681

Abstract: A thin-film transistor (10, 10', 10'') includes a substrate (12) having a substantially outwardly protruding support structure (14) formed thereon such that a portion (18, 20) adjacent to the structure (14) is exposed. The support structure (14) has opposed sidewalls (22, 24) sloped at an angle (theta ?1#191, theta ?2#191) relative to the substrate surface (16). A stack (26) is established over the portion (18, 20) and over a portion of an adjacent opposed sidewall (22, 24). The stack (26) includes an insulating layer (30). A channel material (46) is established on at least a portion of the stack (26), thus forming a channel (52) having a length (L) substantially determined by a thickness of the insulating layer (30) in relation to the adjacent opposed sidewall angle ( theta ?1#191, theta ?2#191).

Abstract translation: 薄膜晶体管（10,10'，10“）包括基板（12），其具有形成在其上的基本上向外突出的支撑结构（14），使得与结构（14）相邻的部分（18,20）是 裸露。 支撑结构（14）具有相对于衬底表面（16）以一定角度（θ1＃191，θ2＃191）倾斜的相对侧壁（22,24）。 在所述部分（18,20）之上和相邻的相对侧壁（22,24）的一部分上方建立堆叠（26）。 堆叠（26）包括绝缘层（30）。 在堆叠（26）的至少一部分上形成通道材料（46），从而形成通道（52），其具有基本上由绝缘层（30）的厚度相对于相邻的绝缘层（30）确定的长度（L） 相反的侧壁角（θ1＃191，θ2＃191）。

公开(公告)号：WO2006047025A2

公开(公告)日：2006-05-04

申请号：PCT/US2005/034151

申请日：2005-09-22

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  MARDILOVICH, Peter ,  KRAMER, Laura ,  HERMAN, Gregory, S. ,  HOFFMAN, Randy ,  PUNSALAN, David

Inventor： MARDILOVICH, Peter ,  KRAMER, Laura ,  HERMAN, Gregory, S. ,  HOFFMAN, Randy ,  PUNSALAN, David

CPC classification number: H01L21/022 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/312 ,  H01L27/1292 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/7869

Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming a component (100,120) having dielectric sub-layers (108,128) are described.

Abstract translation: 描述了用于形成具有电介质子层（108,128）的部件（100,120）的方法，装置，装置和/或系统的实施例。

公开(公告)号：WO2006020349A1

公开(公告)日：2006-02-23

申请号：PCT/US2005/026033

申请日：2005-07-22

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  LEITH, Steven D ,  HERMAN, Gregory S.

Inventor： LEITH, Steven D ,  HERMAN, Gregory S.

IPC: H01L51/40 ,  H05K3/18

CPC classification number: H01L21/288 ,  G02F2001/136295 ,  G03F7/00 ,  H01L21/76838 ,  H01L51/0097 ,  Y02E10/549

Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming a substrate with one or more conductive features formed above or thereon by depositing at least one material on or above at least a portion of at least one surface of a substrate and processing at least a portion of the at least one material, which may comprise patterning at least a portion of the deposited material and/or selectively removing at least a portion of the deposited material.

Abstract translation: 用于形成具有一个或多个导电特征的衬底的方法，装置，器件和/或系统的实施方案，其通过在衬底的至少一个表面的至少一个表面的至少一部分上或之上沉积至少一种材料而形成在其上或上 所述至少一种材料的至少一部分，其可以包括图案化沉积材料的至少一部分和/或选择性地去除沉积材料的至少一部分。

公开(公告)号：WO2008016818A3

公开(公告)日：2008-04-10

申请号：PCT/US2007074397

申请日：2007-07-26

Applicant: HEWLETT PACKARD DEVELOPMENT CO ,  HOFFMAN RANDY ,  HERMAN GREGORY S

Inventor： HOFFMAN RANDY ,  HERMAN GREGORY S

IPC: H01L29/786 ,  H01L21/77

CPC classification number: H01L29/7869 ,  H01L27/1248 ,  H01L27/1292 ,  H01L29/78603

Abstract: A thin-film device includes a plurality of circuit components defining an operational region of the thin-film device, an unpatterned channel portion (108, 340) disposed on the plurality of circuit components, and a patterned passivation dielectric (380,385) selectively disposed on the unpatterned channel portion (108, 340) to electrically pattern an active region of the unpatterned channel portion (108,340).

Abstract translation: 薄膜器件包括限定薄膜器件的工作区域的多个电路元件，设置在多个电路元件上的未设计图案的沟道部分（108,340）以及选择性设置在图案化的钝化电介质（380,385）上的图案化钝化电介质 所述未图案化的沟道部分（108,340）用于电图案化所述未图案化的沟道部分（108,340）的有源区。

公开(公告)号：WO2006080962A1

公开(公告)日：2006-08-03

申请号：PCT/US2005/038814

申请日：2005-10-25

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  HOFFMAN, Randy ,  MARDILOVICH, Peter ,  HERMAN, Gregory S.

Inventor： HOFFMAN, Randy ,  MARDILOVICH, Peter ,  HERMAN, Gregory S.

IPC: H01L29/786

CPC classification number: H01L29/7869

Abstract: An exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel (108, 208) including one or more compounds of the formula A x B x O x , wherein each A is selected from the group of Cu, Ag, Sb, each B is selected from the group of Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, and Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A and B are different.

Abstract translation: 示例性实施例包括半导体器件。 该半导体器件可以包括通道（108,208），其包括一种或多种下式的化合物：其中每个 A选自Cu，Ag，Sb组，每个B选自Cu，Ag，Sb，Zn，Cd，Ga，In，Ge，Sn和Pb中的每一个，每个O是原子氧，每个x 独立地为非零整数，A和B各自不同。

公开(公告)号：WO2005045968A3

公开(公告)日：2005-11-03

申请号：PCT/US2004027331

申请日：2004-08-20

Applicant: HEWLETT PACKARD DEVELOPMENT CO ,  O'NEIL JAMES ,  MARDILOVICH PETER ,  HERMAN GREGORY S ,  CHAMPION DAVID

Inventor： O'NEIL JAMES ,  MARDILOVICH PETER ,  HERMAN GREGORY S ,  CHAMPION DAVID

IPC: C23C14/34 ,  C23C14/54 ,  H01M4/86 ,  H01M4/88 ,  H01M8/12 ,  H01M8/10

CPC classification number: H01M4/8621 ,  C23C14/34 ,  C23C14/3464 ,  C23C14/548 ,  H01M4/8885 ,  H01M4/9033 ,  H01M4/905 ,  H01M4/9058 ,  H01M2008/1293

Abstract: A method of forming a fuel cell electrode includes providing a substrate (130) and at least one deposition device (110), developing a deposition characteristic profile having at least one porous layer based on pre-determined desired electrode properties, forming a film in accordance with the deposition characteristic profile by sputtering material from the deposition device (110) while varying a relative position of the substrate (130) in relation to the deposition device (110) with respect to at least a first axis.

Abstract translation: 形成燃料电池电极的方法包括：提供基板（130）和至少一个沉积装置（110），基于预定的所需电极特性显影具有至少一个多孔层的沉积特性曲线，根据 具有通过来自沉积装置（110）的溅射材料的沉积特性曲线，同时相对于至少第一轴线改变衬底（130）相对于沉积装置（110）的相对位置。

公开(公告)号：WO2005093846A1

公开(公告)日：2005-10-06

申请号：PCT/US2005/006041

申请日：2005-02-25

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  HOFFMAN, Randy ,  HERMAN, Gregory S. ,  MARDILOVICH, Peter

Inventor： HOFFMAN, Randy ,  HERMAN, Gregory S. ,  MARDILOVICH, Peter

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/78648

Abstract: One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more compounds of the formula A x B x O x , wherein each A is selected from the group of Ga, In, each B is selected from the group of Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A and B are different.

Abstract translation: 一个示例性实施例包括半导体器件。 半导体器件可以包括包含一种或多种式AxBxOx的化合物的通道，其中每个A选自Ga，In，每个B选自Ge，Sn，Pb，每个O是原子氧， 每个x独立地是非零整数，并且A和B中的每一个是不同的。

公开(公告)号：WO2005061379A3

公开(公告)日：2005-07-07

申请号：PCT/US2004/041052

申请日：2004-12-09

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  HERMAN, Gregory, S. ,  CHAMPION, David, A. ,  ELLENSON, James, E.

Inventor： HERMAN, Gregory, S. ,  CHAMPION, David, A. ,  ELLENSON, James, E.

IPC: B82B3/00

Abstract: A self-assembled photonic crystal (60, 70, or 80) is formed using a template made by nano-imprint lithography. A layer of imprintable material is deposited (S20) on a substrate, a pattern is imprinted (S30) in the imprintable material to form a template (110) (the pattern of the template being adapted to substantially constrain colloidal particles to a predetermined crystallographic lattice), and colloidal particles (30) are introduced (S40) onto the template, substantially filling the predetermined lattice.

公开(公告)号：WO2006094241A2

公开(公告)日：2006-09-08

申请号：PCT/US2006/007756

申请日：2006-03-02

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  HOFFMAN, Randy ,  HERMAN, Gregory, S. ,  NELSON, Curt

Inventor： HOFFMAN, Randy ,  HERMAN, Gregory, S. ,  NELSON, Curt

IPC: H01L21/428 ,  H01L29/786 ,  H01L21/20 ,  H01L21/477

CPC classification number: H01L29/7869 ,  H01L21/0237 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/76838 ,  H01L31/04

Abstract: Embodiments of methods, apparatuses, devices and systems associated with a thin-film device 200 are disclosed.

Abstract translation: 公开了与薄膜器件200相关联的方法，装置，器件和系统的实施例。