Abstract:
Method and apparatus for achieving an intensity modulated electron blanker are disclosed. An apparatus includes a cathode exposed to an activation source to generate an electron beam. Cathode control circuitry adjusts a cathode control amplifier to regulate cathode voltage and the potential of the electron beam. In some approaches the electron beam potential is used to control the blanking frequency, switching speeds, and duty cycle. In another approach electron generating beams directed on to the cathode are modulated to control the electron beam.
Abstract:
A catadioptric objective configured to inspect a specimen is provided. The catadioptric objective includes a Mangin element having one surface at a first axial location and an extension element positioned together with the Mangin element. The extension element provides a second surface at a second axial location. Certain light energy reflected from the specimen passes to the second surface of the extension element, the Mangin element, and through a plurality of lenses. An aspheric surface may be provided, and light energy may be provided to the specimen using diverting elements such as prisms or reflective surfaces.
Abstract:
Computer-implemented methods, carrier media, and systems for creating a metrology target structure design for a reticle layout are provided. One computer-implemented method for creating a metrology target structure design for a reticle layout includes simulating how one or more initial metrology target structures will be formed on a wafer based on one or more fabrication processes that will be used to form a metrology target structure on the wafer and one or more initial metrology target structure designs. The method also includes creating the metrology target structure design based on results of the simulating step.
Abstract:
Methods and apparatus for fabricating a semiconductor die including several target structures. A first layer is formed that includes one or more line or trench structures that extend in a first direction (310). A second layer is formed that includes one or more line or trench structures that extend in a second direction that is perpendicular to the first structure, such that a projection of the target structure along the first direction is independent of the second direction and a projection of the target structure along the second direction is independent of the first direction (320). A target structure and a method for generating a calibration curve are also described.
Abstract:
Methods and systems for inspection of a wafer are provided. One method includes illuminating the wafer with light at a first wavelength that penetrates into the wafer and light at a second wafer that does not substantially penetrate into the wafer. The method also includes generating output signals responsive to light from the wafer resulting from the illuminating step. In addition, the method includes detecting defects on the wafer using the output signals. The method further includes determining if the defects are subsurface defects or surface defects using the output signals.
Abstract:
Test pads, methods, and systems for measuring properties of a wafer are provided. One test pad formed on a wafer includes a test structure configured such that one or more electrical properties of the test structure can be measured. The test pad also includes a conductive layer formed between the test structure and the wafer. The conductive layer prevents structures located under the test structure between the conductive layer and the wafer from affecting the one or more electrical properties of the test structure during measurement. One method for assessing plasma damage of a wafer includes measuring one or more electrical properties of a test structure formed on the wafer and determining an index characterizing the plasma damage of the test structure using the one or more electrical properties. In addition, systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer are provided. One system includes a corona source configured to deposit the charge on the wafer and a sensor configured to measure one or more conditions within the corona source. This system also includes a control subsystem configured to alter one or more parameters of the corona source based on the one or more conditions. Another system includes a corona source configured to deposit the charge on the wafer and a mixture of gases disposed within a discharge chamber of the corona source during the deposition of the charge. The mixture of gases alters one or more parameters of the charge deposited on the wafer.
Abstract:
Inspection systems, circuits and methods are provided to enhance defect detection by addressing anode saturation as a limiting factor of the measurement detection range of a photomultiplier tube (PMT) detector. Inspection systems, circuits and methods are also provided to enhance defect detection by addressing saturation levels of the amplifier and analog-digital circuitry as a limiting factor of the measurement detection range of an inspection system. In addition, inspection systems, circuits, and methods are provided to enhance defect detection by reducing thermal damage to large particles by dynamically altering the incident laser beam power level supplied to the specimen during a surface inspection scan.
Abstract:
Reticles may comprise shading elements (SEs) for locally altering the reticle optical properties. However, such reticles may degrade over time as a result of repeated exposure to radiation in a lithography process, as the radiation may "heal" the SEs. Disclosed are techniques for monitoring a reticle in order to maintain confidence about the reticle's optical properties and the uniformity of patterns on wafers that are to be printed using the reticle. Reticles undergo periodic inspection comprising reticle transmission measurement and/or aerial imaging of the reticle. When such inspection indicates sufficient reticle degradation, the reticle is tagged for correction prior to its subsequent use in a lithography process.
Abstract:
A relatively high spectral bandwidth objective employed for use in imaging a specimen and method for imaging a specimen is provided. The objective comprises a lens group comprising at least one focusing lens configured to receive light energy and form focused light energy. The focused light energy forms an intermediate image. The objective further comprises at least one field lens located in proximity to an intermediate image, and a catadioptric arrangement positioned to receive the intermediate light energy from the at and form controlled light energy. The catadioptric arrangement may comprise at least one Mangin element and can include a meniscus lens element.
Abstract:
An apparatus for inspecting a specimen, such as a semiconductor wafer, is provided. The apparatus comprises a laser energy source, such as a deep ultraviolet (DUV) energy source and an optical fiber arrangement. The optical fiber arrangement comprises a core surrounded by a plurality of optical fibers structures used to frequency broaden energy received from the laser energy source into frequency broadened radiation. The frequency broadened radiation is employed as an illumination source for inspecting the specimen. In one aspect, the apparatus comprises a central core and a plurality of structures generally surrounding the central core, the plurality of fibers surround a hollow core fiber filled with a gas at high pressure, a tapered photonic fiber, and/or a spider web photonic crystalline fiber, configured to receive light energy and produce frequency broadened radiation for inspecting the specimen.