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    AN OPTICAL BROADBAND FILTER AND A DEVICE COMPRISING THE SAME
    1.
    发明申请
    AN OPTICAL BROADBAND FILTER AND A DEVICE COMPRISING THE SAME 审中-公开
    一种光学宽带滤波器和一种包含该滤波器的设备

    公开(公告)号：WO2012072887A3

    公开(公告)日：2012-07-19

    申请号：PCT/FI2011051071

    申请日：2011-12-01

    Applicant: EPICRYSTALS OY ,  VALLIUS TUOMAS ,  KONTTINEN JANNE ,  TUOMISTO PIETARI

    Inventor： VALLIUS TUOMAS ,  KONTTINEN JANNE ,  TUOMISTO PIETARI

    IPC: G02B5/18 ,  H01S5/125

    CPC classification number: G02B5/1861 ,  G02F1/3551 ,  G02F1/3558 ,  H01S3/109 ,  H01S5/0092 ,  H01S5/02248 ,  H01S5/0615 ,  H01S5/14 ,  H01S5/18 ,  H01S5/4093

    Abstract: A device (80,200,500) comprises a combination of a waveguide (92) and a grating (G1) arranged to provide a spectral reflectance (IR?/I1(?)), wherein the grating (G1) has a plurality of diffractive features (83) in a first region (REGB1) and in a second region (REGB2) such that: - in the first region (REGB1), the local average (?B,LA(z)) of the length (?B) of the period of the diffractive features (83) substantially increases with increasing distance (z) from an origin (ORIG), and - in the second region (REGB2), the local average (?B,LA(z)) of the length (?B) of the period of the diffractive features (83) substantially decreases with increasing distance (z) from an origin (ORIG), wherein the origin (ORIG) is located at an end of the device (80,200,500).

    Abstract translation: 一种装置（80,200,500）包括波导（92）和布置成提供光谱反射率（IRλ/ I1（λ））的光栅（G1）的组合，其中光栅（G1）具有多个衍射特征 ）在第一区域（REGB1）和第二区域（REGB2）中，使得： - 在第一区域（REGB1）中，周期长度（ΔB）的局部平均值（ΔB，LA（z）） 的衍射特征（83）的距离（z）随着与原点（ORIG）的距离（z）增加而大幅增加，并且 - 在第二区域（REGB2）中，长度（ΔB ）随着距原点（ORIG）的距离（z）的增加而基本上减小，其中原点（ORIG）位于装置（80,200,500）的一端。

    WAVELENGTH CONVERSION UNIT
    2.
    发明申请
    WAVELENGTH CONVERSION UNIT 审中-公开

    公开(公告)号：WO2013034813A3

    公开(公告)日：2013-03-14

    申请号：PCT/FI2012/050874

    申请日：2012-09-07

    Applicant: EPICRYSTALS OY ,  KONTTINEN, Janne ,  TUOMISTO, Pietari

    Inventor： KONTTINEN, Janne ,  TUOMISTO, Pietari

    IPC: H01S5/0687 ,  G02F1/377 ,  H01S3/109 ,  G02B5/18

    Abstract: A device (400, NLC) for second harmonic generation comprises: - a wavelength-converting portion (MCP) for converting energy of first light (B1) into second light (B2) at a conversion efficiency, the second light (B2) having a shorter wavelength than the first light (B1), the conversion efficiency having a maximum at a temperature-dependent spectral location (λCE), - a diffractive grating (G1) for reflecting a spectrally selected portion of the first light (B1), said portion being determined by a reflection band of the grating (G1), and - a strain-inducing element (SE1, SE2, SE3, SE4), wherein the optical device (400, NLC) is arranged to operate such that: - the temperature of the wavelength-converting portion (MCP) and the temperature of the grating (G1) depend on an operating temperature of the device (400, NLC), - a change (∆T) in the operating temperature causes a first spectral shift (∆λCE) in the spectral position (λ CE ) of the maximum conversion efficiency and a second spectral shift in (∆λ PB ) the spectral position (λ PB ) of the reflection band, and - the strain-inducing element (SE1, SE2, SE3, SE4) is arranged to induce temperature-dependent strain in the wavelength-converting portion (MCP) and/or in the diffractive grating (G1) so as to reduce a difference between the first spectral shift (∆λ CE ) and the second spectral shift (∆λ PB ).

    HIGH POWER LASER DEVICE
    4.
    发明申请
    HIGH POWER LASER DEVICE 审中-公开
    高功率激光器件

    公开(公告)号：WO2007144471A1

    公开(公告)日：2007-12-21

    申请号：PCT/FI2007/050352

    申请日：2007-06-12

    Applicant: EPICRYSTALS OY ,  KONTTINEN, Janne

    Inventor： KONTTINEN, Janne

    IPC: H01S3/098 ,  H01S5/065 ,  H01S5/183

    CPC classification number: H01S5/18308 ,  H01S3/109 ,  H01S3/1118 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/0609 ,  H01S5/065 ,  H01S5/0657 ,  H01S5/1021 ,  H01S5/1039 ,  H01S5/14 ,  H01S5/2022

    Abstract: The invention is a single-crystal passively mode-locked semiconductor vertical-external-cavity surface-emitting laser (VECSEL). The device can be a single emitter or an array of emitters. The VECSEL structure is grown on a GaAs, InP or GaSb substrate. The device consists of an active region with a number of quantum wells (QW) made of GaInAs, GaInAsP, GaInNAs, GaInNAsSb, AIGaAs or GaAsP. The fundamental lasing wavelength is chosen by the gain material. The gain region is sandwiched between the bottom reflector with reflectivity close to 100% and a partial reflector. A semiconductor spacer layer made of e.g. GaAs or AIGaAs is separating the gain region and a semiconductor saturable absorber. The saturable absorber consists of one or more quantum wells made of GaInAs, GaInAsP, GaInNAs, GaInNAsSb, AIGaAs or GaAsP or layers of quantum dots and a second partial reflector. The quantum wells or layers of quantum dots can be of undoped, n-doped, p-doped or co- doped of such semiconductor material that the optical energy emitted by the gain medium is absorbed by the saturable absorber QW or quantum dot material. The n- and p-contacts are metallized on opposite sides of the semiconductor structure. The laser diode current is flowing through the layer structure partially saturating the semiconductor saturable absorber.

    Abstract translation: 本发明是单晶被动锁模半导体垂直 - 外腔表面发射激光器（VECSEL）。 该设备可以是单个发射器或发射器阵列。 VECSEL结构在GaAs，InP或GaSb衬底上生长。 该器件由具有由GaInAs，GaInAsP，GaInNA，GaInNASSb，AIGaAs或GaAsP制成的多个量子阱（QW）的有源区域组成。 基波激光波长由增益材料选择。 增益区域夹在反射率接近100％的底部反射器和部分反射器之间。 半导体隔离层 GaAs或AIGaAs分离增益区域和半导体可饱和吸收体。 可饱和吸收体由一个或多个由GaInAs，GaInAsP，GaInNA，GaInNAS Sb，AIGaAs或GaAsP或量子点层和第二部分反射体制成的量子阱组成。 量子阱的量子阱或层可以是这种半导体材料的未掺杂，n掺杂，p掺杂或共掺杂，增益介质发射的光能被可饱和吸收剂QW或量子点材料吸收。 n型和p型触点在半导体结构的相对侧上金属化。 激光二极管电流流过部分饱和半导体可饱和吸收体的层结构。

    WAVELENGTH CONVERSION UNIT
    5.
    发明申请
    WAVELENGTH CONVERSION UNIT 审中-公开
    波长转换单元

    公开(公告)号：WO2013034813A2

    公开(公告)日：2013-03-14

    申请号：PCT/FI2012050874

    申请日：2012-09-07

    Applicant: EPICRYSTALS OY ,  KONTTINEN JANNE ,  TUOMISTO PIETARI

    Inventor： KONTTINEN JANNE ,  TUOMISTO PIETARI

    IPC: H01S5/0687

    CPC classification number: H01S3/109 ,  H01S3/1118 ,  H01S5/02438 ,  H01S5/0261 ,  H01S5/141

    Abstract: A device (400, NLC) for second harmonic generation comprises: - a wavelength-converting portion (MCP) for converting energy of first light (B1) into second light (B2) at a conversion efficiency, the second light (B2) having a shorter wavelength than the first light (B1), the conversion efficiency having a maximum at a temperature-dependent spectral location (lambdaCE), - a diffractive grating (G1) for reflecting a spectrally selected portion of the first light (B1), said portion being determined by a reflection band of the grating (G1), and - a strain-inducing element (SE1, SE2, SE3, SE4), wherein the optical device (400, NLC) is arranged to operate such that: - the temperature of the wavelength-converting portion (MCP) and the temperature of the grating (G1) depend on an operating temperature of the device (400, NLC), - a change (∆T) in the operating temperature causes a first spectral shift (∆lambdaCE) in the spectral position (lambdaCE) of the maximum conversion efficiency and a second spectral shift in (∆lambdaPB) the spectral position (lambdaPB) of the reflection band, and - the strain-inducing element (SE1, SE2, SE3, SE4) is arranged to induce temperature-dependent strain in the wavelength-converting portion (MCP) and/or in the diffractive grating (G1) so as to reduce a difference between the first spectral shift (∆lambdaCE) and the second spectral shift (∆lambdaPB).

    Abstract translation: 一种用于二次谐波产生的装置（400，NLC）包括： - 波长转换部分（MCP），用于以转换效率将第一光（B1）的能量转换成第二光（B2），第二光（B2）具有 比第一光（B1）短的波长，转换效率在依赖于温度的光谱位置（λCE）处具有最大值， - 用于反射第一光（B1）的光谱选择部分的衍射光栅（G1），所述部分 由所述光栅（G1）的反射带来确定，以及 - 应变诱导元件（SE1，SE2，SE3，SE4），其中所述光学装置（400，NLC）被布置为操作以使得： - 波长转换部分（MCP）和光栅（G1）的温度取决于器件（400，NLC）的工作温度， - 工作温度的变化（ΔT）引起第一光谱偏移（Δλ ）在最大转换效率的光谱位置（λCE）和a （ΔλPB）中的第二光谱漂移反射带的光谱位置（λPB），以及 - 应变诱导元件（SE1，SE2，SE3，SE4）被布置为引起波长转换部分中的温度相关应变 MCP）和/或在衍射光栅（G1）中以减小第一光谱偏移（ΔλdaCdaCE）和第二光谱偏移（ΔλmbdaPB）之间的差异。

    AN OPTICAL BROADBAND FILTER AND A DEVICE COMPRISING THE SAME
    6.
    发明申请
    AN OPTICAL BROADBAND FILTER AND A DEVICE COMPRISING THE SAME 审中-公开
    一种光学宽带滤波器及包含该滤波器的装置

    公开(公告)号：WO2012072887A2

    公开(公告)日：2012-06-07

    申请号：PCT/FI2011/051071

    申请日：2011-12-01

    Applicant: EPICRYSTALS OY ,  VALLIUS, Tuomas ,  KONTTINEN, Janne ,  TUOMISTO, Pietari

    Inventor： VALLIUS, Tuomas ,  KONTTINEN, Janne ,  TUOMISTO, Pietari

    CPC classification number: G02B5/1861 ,  G02F1/3551 ,  G02F1/3558 ,  H01S3/109 ,  H01S5/0092 ,  H01S5/02248 ,  H01S5/0615 ,  H01S5/14 ,  H01S5/18 ,  H01S5/4093

    Abstract: A device (80,200,500) comprises a combination of a waveguide (92) and a grating (G1) arranged to provide a spectral reflectance (I R λ/I 1 (λ)), wherein the grating (G1) has a plurality of diffractive features (83) in a first region (REGB1) and in a second region (REGB2) such that: - in the first region (REGB1), the local average (Λ B,LA (z)) of the length (Λ B ) of the period of the diffractive features (83) substantially increases with increasing distance (z) from an origin (ORIG), and - in the second region (REGB2), the local average (Λ B,LA (z)) of the length (Λ B ) of the period of the diffractive features (83) substantially decreases with increasing distance (z) from an origin (ORIG), wherein the origin (ORIG) is located at an end of the device (80,200,500).

    Abstract translation: 一种装置（80,200,500）包括布置成提供光谱反射率（IRα/ I1（λ））的波导（92）和光栅（G1）的组合，其中光栅（G1）具有多个衍射特征（83 ）在第一区域（REGB1）和第二区域（REGB2）中，使得：在第一区域（REGB1）中，周期的长度（ΔB）的局部平均值（ΔB，LA（z）） 衍射特征（83）的距离（z）随距离原点（ORIG）的距离（z）增加而显着增加，而在第二区域（REGB2）中，长度（ΔB）的局部平均值（ΔB，LA（z） 衍射特征（83）的周期基本上随着距原点（ORIG）的距离（z）的增加而减小，其中原点（ORIG）位于设备的端部（80,200,500）。

    A WAVELENGTH CONVERSION CRYSTAL, AND A LIGHT SOURCE COMPRISING THE SAME
    7.
    发明申请
    A WAVELENGTH CONVERSION CRYSTAL, AND A LIGHT SOURCE COMPRISING THE SAME 审中-公开
    波长转换晶体，以及包含它的光源

    公开(公告)号：WO2012072886A1

    公开(公告)日：2012-06-07

    申请号：PCT/FI2011/051070

    申请日：2011-12-01

    Applicant: EPICRYSTALS OY ,  VALLIUS, Tuomas ,  KONTTINEN, Janne ,  TUOMISTO, Pietari

    Inventor： VALLIUS, Tuomas ,  KONTTINEN, Janne ,  TUOMISTO, Pietari

    IPC: G02F1/37 ,  G02F1/355 ,  H01S3/109

    CPC classification number: G02B5/1861 ,  G02F1/3551 ,  G02F1/3558 ,  H01S3/109 ,  H01S5/0092 ,  H01S5/02248 ,  H01S5/0615 ,  H01S5/14 ,  H01S5/18 ,  H01S5/4093

    Abstract: A nonlinear crystal (NLC) comprises a plurality of poled zones (91) implemented in a nonlinear material, wherein the crystal (NLC) has a first region (REG1) and a second region (REG2) such that: - in the first region (REG1), the local average of the length (Λ P ) of the period of the poled zones (91) substantially increases with increasing distance (z) from an origin (ORIG), - in the second region (REG2), the local average of the length (Λ P ) of the period of the poled zones (91) substantially decreases with increasing distance (z) from the origin (ORIG), wherein the origin (ORIG) is located at an end of said crystal (NLC).

    Abstract translation: 非线性晶体（NLC）包括以非线性材料实现的多个极化区域（91），其中晶体（NLC）具有第一区域（REG1）和第二区域（REG2），使得：在第一区域 REG1），极化区域（91）的周期的长度（ΔP）的局部平均值随着距离原点（ORIG）的距离（z）的增加而显着增加， - 在第二区域（REG2）中，局部平均 极化区域（91）的周期的长度（ΔP）大大随着距原点（ORIG）的距离（z）的增加而减小，其中原点（ORIG）位于所述晶体（NLC）的一端。

    STABILIZED LIGHT SOURCE
    8.
    发明申请
    STABILIZED LIGHT SOURCE 审中-公开
    稳定的光源

    公开(公告)号：WO2011023858A1

    公开(公告)日：2011-03-03

    申请号：PCT/FI2010/050674

    申请日：2010-08-31

    Applicant: EPICRYSTALS OY ,  VALLIUS, Tuomas ,  TUOMISTO, Pietari ,  KONTTINEN, Janne

    Inventor： VALLIUS, Tuomas ,  TUOMISTO, Pietari ,  KONTTINEN, Janne

    IPC: H01S5/068 ,  H01S3/13 ,  G02B5/18 ,  G02F1/37

    CPC classification number: H01S5/141 ,  H01S3/08009 ,  H01S3/109 ,  H01S5/0267 ,  H01S5/18

    Abstract: 1. A light source comprises: -a light emitting unit, -a nonlinear medium, and - a resonant grating, wherein said light emitting unit is arranged to emit first light into said nonlinear medium, said nonlinear medium is arranged to generate second light such that the optical frequency of said second light is higher than the optical frequency of said first light, and the resonant grating is arranged to stabilize the optical frequency of said first light by providing optical feedback to said light emitting unit.

    Abstract translation: 1.一种光源，包括：发光单元，非线性介质和谐振光栅，其中所述发光单元布置成将第一光发射到所述非线性介质中，所述非线性介质被布置成产生第二光， 所述第二光的光频率高于所述第一光的光频率，并且所述谐振光栅被布置成通过向所述发光单元提供光反馈来稳定所述第一光的光频。

    LIGHT EMITTING ARRAY
    9.
    发明申请
    LIGHT EMITTING ARRAY 审中-公开
    发光阵列

    公开(公告)号：WO2008142210A1

    公开(公告)日：2008-11-27

    申请号：PCT/FI2008/050295

    申请日：2008-05-21

    Applicant: EPICRYSTALS OY ,  KONTTINEN, Janne ,  JOUHTI, Tomi ,  TUOMISTO, Pietari

    Inventor： KONTTINEN, Janne ,  JOUHTI, Tomi ,  TUOMISTO, Pietari

    IPC: H01S3/113 ,  G02F1/37 ,  G03B21/12 ,  H01S3/109 ,  G02B5/18

    CPC classification number: G02F1/3532 ,  G02B5/1809 ,  G03B21/20 ,  G03B21/2013 ,  G03B21/2033 ,  G03B21/204 ,  G03B33/06 ,  H01S5/0092 ,  H01S5/0601 ,  H01S5/125 ,  H01S5/141 ,  H01S5/18 ,  H01S5/4025 ,  H04N9/3129 ,  H04N9/3161 ,  H04N9/3164

    Abstract: A light emitting device (400) including an array of light emitters (E1 ) to emit first light pulses (B1 ). Each of the light emitters (E1 ) includes a saturable absorber (40) and a waveguide (24) having an electrically pumped gain region (20) to emit the first light pulses (B1 ). At least one reflector structure (50) reflects the first light pulses (B1 ) into a nonlinear crystal (140) by changing the direction of the first light pulses (B1 ) by an angle that is in a range of 70 to 110 degrees. The reflector structure (50) includes a sub-wavelength grating structure (52) to change the polarization of the first light pulses (B1 ). A nonlinear crystal (140) generates second light pulses (B2) such that the optical frequency of the second light pulses (B2) is two times the optical frequency of the first light pulses (B1 ).

    Abstract translation: 一种包括发射第一光脉冲（B1）的发光体（E1）阵列的发光装置（400）。 每个发光体（E1）包括可饱和吸收体（40）和具有发射第一光脉冲（B1）的电泵浦增益区域（20）的波导（24）。 至少一个反射器结构（50）通过将第一光脉冲（B1）的方向改变在70至110度的范围内的角度将第一光脉冲（B1）反射成非线性晶体（140）。 反射器结构（50）包括用于改变第一光脉冲（B1）的偏振的亚波长光栅结构（52）。 非线性晶体（140）产生第二光脉冲（B2），使得第二光脉冲（B2）的光频率是第一光脉冲（B1）的光频率的两倍。

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