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    量子カスケードレーザ
    1.
    发明申请
    量子カスケードレーザ 审中-公开
    QUANTUM-CASCADE激光

    公开(公告)号：WO2014189015A1

    公开(公告)日：2014-11-27

    申请号：PCT/JP2014/063241

    申请日：2014-05-19

    Applicant: 浜松ホトニクス株式会社

    Inventor： 藤田　和上 ,  枝村　忠孝 ,  秋草　直大

    IPC: H01S5/34 ,  G02F1/35 ,  H01S5/12

    CPC classification number: H01S5/3402 ,  H01S5/0208 ,  H01S5/0604 ,  H01S5/1096 ,  H01S5/12 ,  H01S5/309 ,  H01S2302/02

    Abstract: 　半導体基板１０と、基板上に直列に設けられた第１、第２活性層１５、２５とを備えて、量子カスケードレーザ１Ａを構成する。第１活性層１５の単位積層体１６は、そのサブバンド準位構造において、発光上準位と、発光下準位とを有し、第１周波数ω １ の光を生成可能に構成され、第２活性層２５の単位積層体２６は、そのサブバンド準位構造において、第１発光上準位と、第２発光上準位と、複数の発光下準位とを有し、第２周波数ω ２ の光を生成可能に構成され、第１周波数ω １ の光、及び第２周波数ω ２ の光による差周波発生によって、差周波数ωの光を生成する。これにより、テラヘルツ光などの長波長の光を好適に生成することが可能な量子カスケードレーザが実現される。

    Abstract translation: 本发明设置有半导体衬底（10）和串联设置在衬底上的第一和第二有源层（15,25），以构成量子级联激光器（1A）。 第一有源层（15）的整体叠层制品（16）在子带水平结构内具有发光上层和发光较低层，并且被配置为能够产生具有第一频率 （ω1）。 第二有源层（25）的整体层叠制品（26）在子带级结构内具有第一发光上层，第二发光上层和多个发光较低层，以及 被配置为能够产生具有第二频率（ω2）的光。 具有差频率（ω）的光通过使用具有第一频率（ω1）的光和具有第二频率（ω2）的光产生差频产生。 这产生能够适当地产生具有长波长的光的量子级联激光器，例如太赫兹光。

    OPTOELECTRONIC SYSTEMS PROVIDING HIGH-POWER HIGH-BRIGHTNESS LASER LIGHT BASED ON FIELD COUPLED ARRAYS, BARS AND STACKS OF SEMICONDUCTOR DIODE LASERS
    2.
    发明申请
    OPTOELECTRONIC SYSTEMS PROVIDING HIGH-POWER HIGH-BRIGHTNESS LASER LIGHT BASED ON FIELD COUPLED ARRAYS, BARS AND STACKS OF SEMICONDUCTOR DIODE LASERS 审中-公开
    光电系统基于半导体二极管激光器的场耦合阵列，条形和堆叠提供高功率高亮度激光灯

    公开(公告)号：WO2010023094A3

    公开(公告)日：2010-09-16

    申请号：PCT/EP2009060350

    申请日：2009-08-10

    Applicant: PBC LASERS GMBH ,  SHCHUKIN VITALY ,  LEDENTSOV NIKOLAI

    Inventor： SHCHUKIN VITALY ,  LEDENTSOV NIKOLAI

    IPC: H01S5/10 ,  H01S5/40

    CPC classification number: H01S5/10 ,  H01S5/0265 ,  H01S5/028 ,  H01S5/0604 ,  H01S5/0605 ,  H01S5/1021 ,  H01S5/1032 ,  H01S5/105 ,  H01S5/14 ,  H01S5/2036 ,  H01S5/32341 ,  H01S5/4031 ,  H01S5/4081 ,  H01S2301/18

    Abstract: A semiconductor diode laser having a broad vertical waveguide and a broad lateral waveguide is disclosed emitting laser light in a single vertical mode and a single lateral mode narrow beam. The vertical waveguide comprises a coupled cavity structure, wherein light, generated in the active medium placed in the first cavity leaks into the second cavity and returns back. Phase matching conditions govern the selection of a single vertical mode. A multi-stripe lateral waveguide comprises preferably a lateral photonic band crystal with a lateral optical defect created by selected pumping of multistripes. This approach allows the selection of a single lateral mode having a higher optical confinement factor and/or a lower absorption loss and/or a lower leakage loss compared to the rest lateral optical modes. This enables a single lateral mode lasing from a broad area field coupled laser array. A laser system comprised of multiple field coupled laser arrays on a single wafer and a set of external mirrors enables an ultra-broad field coupled laser bar emitting a coherent laser light in a single vertical optical mode and a single lateral optical mode. A laser system comprised of multiple ultra-broad field coupled laser bars on different wafers and a set of external mirrors enables an ultra-broad field coupled laser stack emitting coherent laser light in a single vertical optical mode and a single lateral optical mode. This allows realization of ultrahigh power ultrahigh brightness laser systems based on semiconductor diode lasers.

    Abstract translation: 公开了一种具有宽垂直波导和宽横向波导的半导体二极管激光器，其以单个垂直模式和单个横向模式窄波束发射激光。 垂直波导包括耦合腔结构，其中放置在第一腔中的活性介质中产生的光泄漏到第二腔中并返回。 相位匹配条件控制单个垂直模式的选择。 多条横向波导优选包括横向光子带晶体，其具有通过多条纹的选定泵浦而产生的横向光学缺陷。 与其余的横向光学模式相比，该方法允许选择具有更高的光学约束因子和/或更低的吸收损失和/或更低的泄漏损失的单个横向模式。 这使得能够从大面积场耦合激光器阵列进行单个横向模式激射。 由单个晶片上的多个场耦合激光器阵列和一组外部反射镜组成的激光器系统使得能够以单个垂直光学模式和单个横向光学模式发射相干激光的超宽场耦合激光器条。 由不同晶圆上的多个超宽场耦合激光条和一组外部反射镜组成的激光系统使得能够在单个垂直光学模式和单个横向光学模式下发射相干激光的超宽场耦合激光堆栈。 这允许实现基于半导体二极管激光器的超高功率超高亮度激光系统。

    OPTOELECTRONIC SYSTEMS PROVIDING HIGH-POWER HIGH-BRIGHTNESS LASER LIGHT BASED ON FIELD COUPLED ARRAYS, BARS AND STACKS OF SEMICONDUCTOR DIODE LASERS
    3.
    发明申请
    OPTOELECTRONIC SYSTEMS PROVIDING HIGH-POWER HIGH-BRIGHTNESS LASER LIGHT BASED ON FIELD COUPLED ARRAYS, BARS AND STACKS OF SEMICONDUCTOR DIODE LASERS 审中-公开
    基于现场耦合阵列，半导体二极管激光器的棒和堆叠提供大功率高亮度激光的光电系统

    公开(公告)号：WO2010023094A2

    公开(公告)日：2010-03-04

    申请号：PCT/EP2009/060350

    申请日：2009-08-10

    Applicant: PBC LASERS GMBH ,  SHCHUKIN, Vitaly ,  LEDENTSOV, Nikolai

    Inventor： SHCHUKIN, Vitaly ,  LEDENTSOV, Nikolai

    IPC: H01S5/10 ,  H01S5/40

    CPC classification number: H01S5/10 ,  H01S5/0265 ,  H01S5/028 ,  H01S5/0604 ,  H01S5/0605 ,  H01S5/1021 ,  H01S5/1032 ,  H01S5/105 ,  H01S5/14 ,  H01S5/2036 ,  H01S5/32341 ,  H01S5/4031 ,  H01S5/4081 ,  H01S2301/18

    Abstract: A semiconductor diode laser having a broad vertical waveguide and a broad lateral waveguide is disclosed emitting laser light in a single vertical mode and a single lateral mode narrow beam. The vertical waveguide comprises a coupled cavity structure, wherein light, generated in the active medium placed in the first cavity leaks into the second cavity and returns back. Phase matching conditions govern the selection of a single vertical mode. A multi-stripe lateral waveguide comprises preferably a lateral photonic band crystal with a lateral optical defect created by selected pumping of multistripes. This approach allows the selection of a single lateral mode having a higher optical confinement factor and/or a lower absorption loss and/or a lower leakage loss compared to the rest lateral optical modes. This enables a single lateral mode lasing from a broad area field coupled laser array. A laser system comprised of multiple field coupled laser arrays on a single wafer and a set of external mirrors enables an ultra-broad field coupled laser bar emitting a coherent laser light in a single vertical optical mode and a single lateral optical mode. A laser system comprised of multiple ultra-broad field coupled laser bars on different wafers and a set of external mirrors enables an ultra-broad field coupled laser stack emitting coherent laser light in a single vertical optical mode and a single lateral optical mode. This allows realization of ultrahigh power ultrahigh brightness laser systems based on semiconductor diode lasers.

    Abstract translation: 公开了具有宽垂直波导和宽侧波导的半导体二极管激光器，其以单个垂直模式和单个横向模式窄波束发射激光。 垂直波导包括耦合空腔结构，其中在放置在第一腔中的有源介质中产生的光泄漏到第二腔中并返回。 相位匹配条件控制单个垂直模式的选择。 多条横向波导优选地包括具有通过多条线的选择泵送产生的横向光学缺陷的横向光子带晶体。 与其余的横向光学模式相比，该方法允许选择具有更高的光学约束因子和/或较低的吸收损耗和/或较低的泄漏损耗的单个横向模式。 这使得能够从广域场耦合激光器阵列进行单个横向模式激光。 由单个晶片上的多个场耦合激光器阵列和一组外部反射镜组成的激光系统能够实现在单个垂直光学模式和单个横向光学模式下发射相干激光的超宽场耦合激光棒。 由不同晶片上的多个超宽场耦合激光棒组成的激光系统和一组外部反射镜使得能够实现在单一垂直光学模式和单一横向光学模式下发射相干激光的超宽场耦合激光器堆叠。 这允许实现基于半导体二极管激光器的超高功率超高亮度激光系统。

    LASER DIODE WITH PHASE MATCHING GRATING
    4.
    发明申请
    LASER DIODE WITH PHASE MATCHING GRATING 审中-公开
    具有相位匹配光栅的激光二极管

    公开(公告)号：WO2005065428A3

    公开(公告)日：2005-11-10

    申请号：PCT/US2004005549

    申请日：2004-02-23

    Applicant: QUINTESSENCE PHOTONICS CORP

    Inventor： LAMMERT ROBERT M ,  UNGAR JEFFREY E

    IPC: G02F1/35 ,  H01S3/10 ,  H01S5/026 ,  H01S5/06 ,  H01S5/40

    CPC classification number: H01S5/06258 ,  G02F1/3534 ,  G02F2203/13 ,  H01S1/02 ,  H01S5/0604 ,  H01S5/18 ,  H01S5/4087

    Abstract: A semiconductor diode laser that generates light at wavelengths longer than conventional diode lasers. The laser includes a first gain element that generates a first "pump" laser beam having a first optical frequency and a second gain element that generates a second "pump" laser beam having a second optical frequency. The first and second pump beams are mixed in a third section to create a wave of nonlinear polarization oscillating at the difference frequency of the first two beams. Power from this nonlinear polarization wave is coupled by a near-field phase grating to excite an electromagnetic output beam which propagates perpendicular to the laser axis. The frequency of this output beam may be much smaller than either pump beam.

    Abstract translation: 一种半导体二极管激光器，其产生波长比传统二极管激光器更长的光。 激光器包括产生具有第一光学频率的第一“泵”激光束的第一增益元件和产生具有第二光学频率的第二“泵”激光束的第二增益元件。 第一和第二泵浦光束在第三部分中混合，以产生以前两个光束的差频振荡的非线性偏振波。 来自该非线性偏振波的功率通过近场相位光栅耦合以激发垂直于激光轴传播的电磁输出光束。 该输出光束的频率可能比任一泵浦光束小得多。

    METHODS AND APPARATUS FOR MODE-LOCKING ON-CHIP LASERS
    5.
    发明申请
    METHODS AND APPARATUS FOR MODE-LOCKING ON-CHIP LASERS 审中-公开
    用于模式锁芯片上激光器的方法和设备

    公开(公告)号：WO2018044363A2

    公开(公告)日：2018-03-08

    申请号：PCT/US2017/032088

    申请日：2017-05-11

    Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY

    Inventor： SHTYRKOVA, Katia ,  KAERTNER, Franz X. ,  CALLAHAN, Patrick T. ,  WATTS, Michael R. ,  IPPEN, Erich P.

    IPC: H01S3/05

    CPC classification number: H01S5/0657 ,  H01S3/0637 ,  H01S3/08054 ,  H01S3/082 ,  H01S3/1112 ,  H01S3/1616 ,  H01S3/1636 ,  H01S5/02453 ,  H01S5/026 ,  H01S5/041 ,  H01S5/042 ,  H01S5/0604 ,  H01S5/06236 ,  H01S5/06246 ,  H01S5/06251 ,  H01S5/0651 ,  H01S5/1007

    Abstract: An artificial saturable absorber uses additive pulse mode-locking to enable pulse operation of an on-chip laser operation. Four different artificial saturable absorbers are disclosed. The first includes an integrated coupler, two arms each containing some implementation of the end-reflector, and a phase bias element in one arm. The second includes an integrated directional coupler, two integrated waveguide arms, and another integrated coupler as an output. The third includes an integrated birefringent element, integrated birefringent-free waveguide, and integrated polarizer. And the fourth includes a multimode waveguide that allows for different modes to propagate in such a way that the difference in the spatial distribution of intensity causes a nonlinear phase difference between the modes. These are just some examples of an on-chip fully integrated artificial saturable absorber with instantaneous recovery time that allow for generation of sub-femtosecond optical pulses at high repetition rates using passive mode-locking.

    Abstract translation: 人工可饱和吸收体使用附加脉冲模式锁定来启用片上激光器操作的脉冲操作。 公开了四种不同的人工可饱和吸收体。 第一个包括一个集成的耦合器，两个臂，每个臂都包含一些端部反射器，以及一个臂中的相位偏置元件。 第二个包括一个集成定向耦合器，两个集成波导臂和另一个集成耦合器作为输出。 第三种包括集成双折射元件，集成双折射波导和集成偏振器。 第四个包括一个多模波导，它允许不同的模式以这样的方式传播，即强度的空间分布的差异导致模式之间的非线性相位差。 这些仅仅是片上完全集成的人工可饱和吸收体的一些例子，具有瞬间恢复时间，允许使用被动模式锁定以高重复率产生亚飞秒光脉冲。

    MONOLITHIC TUNABLE TERAHERTZ RADIATION SOURCE USING NONLINEAR FREQUENCY MIXING IN QUANTUM CASCADE LASERS
    6.
    发明申请
    MONOLITHIC TUNABLE TERAHERTZ RADIATION SOURCE USING NONLINEAR FREQUENCY MIXING IN QUANTUM CASCADE LASERS 审中-公开
    利用量子级联激光非线性混频的单片可调谐TERAHERTZ辐射源

    公开(公告)号：WO2015163965A3

    公开(公告)日：2015-12-23

    申请号：PCT/US2015014371

    申请日：2015-02-04

    Applicant: UNIV TEXAS

    Inventor： BELKIN MIKHAIL ,  JUNG SEUNGYONG ,  VIJAYRAGHAVAN KARUN

    IPC: H01S5/20 ,  H01S5/34

    CPC classification number: H01S5/0604 ,  G02F1/3534 ,  G02F2203/13 ,  H01S5/0207 ,  H01S5/0208 ,  H01S5/0422 ,  H01S5/06256 ,  H01S5/06258 ,  H01S5/1021 ,  H01S5/1092 ,  H01S5/12 ,  H01S5/125 ,  H01S5/3401 ,  H01S5/34306

    Abstract: A terahertz difference-frequency generation quantum cascade laser source that provides monolithic, electrically-controlled tunable terahertz emission. The quantum cascade laser includes a substrate, a lower cladding layer positioned above the substrate and an active region layer with optical nonlinearity positioned on the lower cladding layer. The active region layer is arranged as a multiple quantum well structure. One or more feedback gratings are etched into spatially separated sections of the cladding layer positioned on either side of the active region. The periodicity of each grating section determines the mid-infrared lasing frequencies. The grating sections are electrically isolated from one another and biased independently. Tuning is achieved by changing a refractive index of one or all of the grating sections via a DC current bias thereby causing a shift in the mid-infrared lasing frequency. In this manner, a monolithic, electrically-pumped, tunable THz source is achieved.

    Abstract translation: 太赫兹差频生成量子级联激光源，提供单片式电控可调谐太赫兹发射。 量子级联激光器包括衬底，位于衬底上方的下包层以及位于下包层上的具有光学非线性的有源区域层。 有源区域层被布置为多量子阱结构。 将一个或多个反馈光栅蚀刻到位于有源区任一侧的包层的空间分离部分。 每个光栅部分的周期性决定了中红外激射频率。 光栅部分彼此电隔离并独立偏置。 调谐是通过经由DC电流偏置改变一个或全部光栅部分的折射率，从而引起中红外激光频率的偏移而实现的。 以这种方式，实现了单片式电泵浦可调谐THz源。

    WAVELENGTH VERSATILE VECSEL RAMAN LASER
    7.
    发明申请
    WAVELENGTH VERSATILE VECSEL RAMAN LASER 审中-公开
    波长VERSSTILE VECSEL拉曼激光

    公开(公告)号：WO2013067599A3

    公开(公告)日：2014-11-13

    申请号：PCT/AU2012001389

    申请日：2012-11-09

    Applicant: UNIV MACQUARIE

    Inventor： LIN JIPENG ,  PASK HELEN M ,  SPENCE DAVID JAMES ,  HAMILTON CRAIG J ,  MALCOLM GRAEME P A

    IPC: H01S5/183 ,  H01S3/108 ,  H01S3/109 ,  H01S5/14

    CPC classification number: H01S5/0604 ,  H01S3/08027 ,  H01S3/082 ,  H01S3/1086 ,  H01S3/109 ,  H01S3/30 ,  H01S5/041 ,  H01S5/141 ,  H01S5/142 ,  H01S5/183

    Abstract: A tunable lasing device including a vertical external cavity surface emitting laser, adapted to generate a fundamental laser beam in response to pumping from a pump source, said fundamental laser beam having a fundamental wavelength and a fundamental linewidth; a fundamental resonator cavity adapted to resonate the fundamental beam therein; a first optical element located within the fundamental resonator cavity for control of the fundamental linewidth of the fundamental beam; a Raman resonator located at least partially in said fundamental resonator adapted to receive the fundamental beam and comprising therein, a solid state Raman active medium located therein for generating at least a first Stokes beam from the fundamental beam wherein said Raman resonator cavity is adapted to resonate said Stokes beam therein and further adapted to emit an output beam; and further comprising a nonlinear medium located within the Raman resonator cavity for nonlinear frequency conversion of at least one of the beams present in the fundamental or the Raman resonator cavity; said tunable lasing device further comprising an output coupler adapted to emit an output beam, said output beam comprising at least a portion of said frequency converted beam being derived from at least one of the resonating beams in said fundamental or said Raman resonator cavities.

    Abstract translation: 一种可调谐激光装置，包括垂直的外腔表面发射激光器，适于响应于泵浦源的泵浦而产生基本激光束，所述基本激光束具有基本波长和基本线宽; 适于使基波束谐振的基本谐振腔; 位于基本谐振腔内的第一光学元件，用于控制基波束的基线宽度; 至少部分地位于所述基本谐振器中的拉曼谐振器，其适于接收基波束并且在其中包括位于其中的固态拉曼有源介质，用于从基波束产生至少第一斯托克斯波束，其中所述拉曼谐振腔适于谐振 所述斯托克斯光束在其中并进一步适于发射输出光束; 并且还包括位于拉曼谐振腔内的非线性介质，用于非线性频率转换存在于基波或拉曼谐振腔中的至少一个波束; 所述可调谐激光装置还包括适于发射输出光束的输出耦合器，所述输出光束包括所述频率转换光束的至少一部分从所述基波或所述拉曼谐振腔中的至少一个谐振光束导出。

    INTRA-CAVITY OPTICAL PARAMETRIC OSCILLATOR
    8.
    发明申请
    INTRA-CAVITY OPTICAL PARAMETRIC OSCILLATOR 审中-公开
    内部光学参数振荡器

    公开(公告)号：WO2010119242A1

    公开(公告)日：2010-10-21

    申请号：PCT/GB2010/000738

    申请日：2010-04-13

    Applicant: UNIVERSITY COURT OF THE UNIVERSITY OF ST ANDREWS ,  DUNN, Malcolm H ,  STOTHARD, David

    Inventor： DUNN, Malcolm H ,  STOTHARD, David

    IPC: H01S3/082 ,  H01S3/108 ,  H01S5/14 ,  G02F1/39 ,  H01S3/0941 ,  H01S5/183 ,  H01S3/106 ,  H01S3/081

    CPC classification number: H01S5/142 ,  G02F2001/392 ,  H01S3/08027 ,  H01S3/08054 ,  H01S3/0815 ,  H01S3/0823 ,  H01S3/094053 ,  H01S3/09415 ,  H01S3/1062 ,  H01S3/1083 ,  H01S3/1611 ,  H01S3/1673 ,  H01S5/02484 ,  H01S5/041 ,  H01S5/0604 ,  H01S5/183

    Abstract: An optical parametric oscillator comprising: an optical cavity; a semiconductor gain- medium (14) located within the optical cavity, such that together they form a semiconductor laser, and a nonlinear material (24) located within the cavity such that the nonlinear material continuously generates down- converted idler- and signal-waves in response to a pump-wave continuously generated by the semiconductor gain-medium, wherein the pump wave is resonant within the optical cavity and one or other but not both of the down-converted waves is resonant within the pump wave cavity or a further optical cavity. Brewster plates (40) ensure singly resonant OPO and a birefringent filter (30) is used for frequency setting. Coupled cavities alllow for setting the photon lifetime in the cavity that relaxation oscillations are prevented.

    Abstract translation: 一种光学参量振荡器，包括：光腔; 位于光腔内的半导体增益介质（14），使得它们一起形成半导体激光器，以及位于空腔内的非线性材料（24），使得非线性材料连续地产生下变频惰轮和信号波 响应于由半导体增益介质连续产生的泵浦波，其中泵浦波在光腔内谐振，并且一个或其它但不是两个下变换波在泵波腔内共振或另外的光学 腔。 布鲁斯特板（40）确保单共振OPO，双折射滤光片（30）用于频率设定。 所有的耦合腔都设置在空腔中的光子寿命，以防止松弛振荡。

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