Abstract:
A two-section semiconductor laser includes a gain section and a modulation-independent grating section to reduce chirp. The modulation-independent grating section includes a diffraction grating for reflecting light and forms a laser cavity with the gain section for lasing at a wavelength or range of wavelengths reflected by the diffraction grating. The gain section of the semiconductor laser includes a gain electrode for driving the gain section with at least a modulated RF signal and the grating section includes a grating electrode for driving the grating section with a DC bias current independent of the modulation of the gain section. The semiconductor laser may thus be directly modulated with the modulated RF signal without the modulation significantly affecting the index of refraction in the diffraction grating, thereby reducing chirp.
Abstract:
A laser assembly is disclosed. The laser assembly includes a carrier for mounting a semiconductor laser diode (LD) and a capacitor thereon. The carrier provides, in a top surface thereof, a metal pattern having a die area for mounting the LD through a brazing material, a mounting area, and an auxiliary area for absorbing a surplus brazing material. The capacitor is mounted on the mounting area closer to the LD through another brazing material.
Abstract:
According to the present invention, a monolithically integrated laser (102), also referred to herein as a U-laser (102), or integrated dual optical emission laser (102), having a first optical emission (104) and a second optical emission (106) where both the first and second optical emissions (104), (106) of the monolithically integrated laser (102) are in optical communication with a modulator (108) or other device is provided. The integrated dual emission laser (102) can be formed with a a light bending portion (134) in variety of configurations including a waveguide in the form of a U-shape, or total internal reflection (TIR) mirrors, curved waveguides, and free-space etched gap mirrors. The integrated dual optical emission laser (102) can also have two laser gain sections (130), (148), one on each arm of the laser (102) to control gain.
Abstract:
A monolithically integrated, tunable semiconductor laser with an optical waveguide, comprising epitaxial layers on a substrate and having first and second reflectors bounding an optical gain section and a non-driven region, wherein at least one of the reflectors is a distributed Bragg reflector section configured to have a tunable reflection spectrum, wherein control electrodes are provided to at least the optical gain section, and the distributed Bragg reflector section, and wherein the non-driven region has a length of at least 100μm, is without an electrical contact directly contacting onto the epitaxially grown side of the non- driven region, and the non-driven region is without a reflective Bragg grating within the epitaxial layers of the non-driven region.
Abstract:
A quantum cascade laser and its method of fabrication are provided. The quantum cascade laser comprises one or more p-type electrical isolation regions (40) and a plurality of electrically isolated laser sections (10, 12, 16) extending along a waveguide axis of the laser. An active waveguide core (20) is sandwiched between upper (22, 26) and lower (24) n-type cladding layers and the active core and the upper and lower n-type cladding layers extend through the electrically isolated laser sections of the quantum cascade laser. A portion of the upper n-type cladding layer comprises sufficient p-type dopant to have become p-type and to have become an electrical isolation region, which extends across at least a part of the thickness upper n-type cladding layer along a projection separating the sections of the quantum cascade laser.
Abstract:
Particular embodiments of the present disclosure relate systems and methods for evaluating visible light sources. According to one embodiment, a method of evaluating a visible light source including a semiconductor laser having a gain section, a wavelength selective section, and a phase section includes applying a gain drive signal to the gain section of the semiconductor laser at a gain modulation frequency, and applying a triangular wave drive signal to the wavelength selective section of the semiconductor laser at a wavelength selective modulation frequency that is greater than the gain modulation frequency. The light source emits a plurality of optical output pulses. Output power values of the optical output pulses at a selected wavelength are detected. The output power value of selected output pulses is compared with an output power threshold value indicating whether the visible light source satisfies an output power specification.
Abstract:
Optical systems operable to emit multiple frequency- converted spectral peaks are provided. In one embodiment, an optical system (100) includes an optical source (110) and a wavelength conversion device (130). The optical source (110) may include a laser configured to emit a pump beam (120) having at least two fundamental spectral peaks (125, 127). The wavelength conversion device (130) may include a non- linear optical medium configured to phase match the second harmonic generation of each of the at least two fundamental spectral peaks (125, 127) and sum- frequency generation of the at least two fundamental spectral peaks (125, 127) such that an output beam (140) comprising at least three frequency- converted spectral peaks (142, 144, 146) having approximately equal power is emitted from an output facet (138) of the wavelength conversion device (130) when the pump beam (120) of the optical source (110) is incident on an input facet (131) of the wavelength conversion device (130).
Abstract:
According to one embodiment of the present invention, an optical package comprises one or more semiconductor lasers coupled to a wavelength conversion device with adaptive optics. The optical package also comprises a package controller programmed to operate the semiconductor laser and the adaptive optics based on modulated feedback control signals supplied to the wavelength selective section of the semiconductor laser and the adaptive optics. The wavelength control signal supplied to the wavelength selective section of the semiconductor laser may be adjusted based on the modulated wavelength feedback control signal such that the response parameter of the wavelength conversion device is optimized. Similarly, the position control signals supplied to the adaptive optics may be adjusted based on the modulated feedback position control signals such that the response parameter of the wavelength conversion device is optimized.
Abstract:
The present invention relates generally to semiconductor lasers and laser projection systems. According to one embodiment of the present invention, a projected laser image is generated utilizing an output beam of the semiconductor laser (12). A gain current control signal is generated by a laser feedback loop to control the gain section (12B) of the semiconductor laser. Wavelength fluctuations of the semiconductor laser are narrowed by incorporating a wavelength recovery operation in a drive current of the semiconductor laser and by initiating the wavelength recovery operations as a function of the gain current control signal or an optical intensity error signal. Additional embodiments are disclosed and claimed.