公开(公告)号：WO2011016741A4

公开(公告)日：2012-01-05

申请号：PCT/PT2010000037

申请日：2010-08-05

Applicant: UNIV NOVA DE LISBOA ,  INST STEFAN JOSEF ,  UNIV BARCELONA ,  DE PAIVA MARTINS RODRIGO FERRAO ,  CORREIA FORTUNATO ELVIRA MARIA ,  CANDIDO BARQUINHA PEDRO MIGUEL ,  NUNES PEREIRA LUIS MIGUEL ,  GONCALVES GONCALO PEDRO ,  KUSCER HROVATIN DANJELA ,  KOSEC MARIJA

Inventor： DE PAIVA MARTINS RODRIGO FERRAO ,  CORREIA FORTUNATO ELVIRA MARIA ,  CANDIDO BARQUINHA PEDRO MIGUEL ,  NUNES PEREIRA LUIS MIGUEL ,  GONCALVES GONCALO PEDRO ,  KUSCER HROVATIN DANJELA ,  KOSEC MARIJA

IPC: H01L21/316

CPC classification number: H01L21/31604 ,  H01L21/0215 ,  H01L21/02178 ,  H01L21/02183 ,  H01L21/02194 ,  H01L21/02266 ,  H01L21/28194 ,  H01L29/517 ,  H01L29/7869

Abstract: High performance thin-film, transistors entirely processed at temperatures not exceeding 150°C, using amorphous multi component dielectrics based on t.he mixture of high band gap and high dielectric constant ( K) materials are presented in this invention. The invention relates to the use of sputtered or ink jet printed mixed dielectric materials such as Ta2O5 with SiO2 or Al2O3 or HfO2 with SiO2 or Al2O3. These multicomponent dielectrics allow producing amorphous dielectrics to be introduced in high stable electronic devices with low leakage currents, while preserving a high dielectric constant. This results in producing thin film transistors with remarkable electrical properties, such as the ones produced based on Ga-In-Zn oxide as channel layers and where the dielectric was the combination of the mixture Ta2O5:SiO2, exhibiting field- effect mobility exceeding 35 cm2 V-1 s-1, close to 0 V turn- on voltage, on/off ratio higher than 106 and subthreshold slope below 0.24 V dec-1.

Abstract translation: 本发明提出了使用基于高带隙和高介电常数（K）材料的混合物的非晶多组分电介质，在不超过150℃的温度下完全加工的高性能薄膜。 本发明涉及使用溅射或喷墨印刷的混合电介质材料，例如具有SiO 2或Al 2 O 3或HfO 2的Ta 2 O 5与SiO 2或Al 2 O 3。 这些多组分电介质允许产生非晶电介质，以便在具有低泄漏电流的高稳定电子器件中引入，同时保持高的介电常数。 这导致产生具有显着电性能的薄膜晶体管，例如基于Ga-In-Zn氧化物作为沟道层产生的薄膜晶体管，并且其中电介质是混合物Ta 2 O 5：SiO 2的组合，显示场效应迁移率超过35cm 2 V-1 s-1，接近0 V导通电压，开/关比高于106，亚阈值斜率低于0.24 V dec-1。

公开(公告)号：WO2011073399A3

公开(公告)日：2011-08-25

申请号：PCT/EP2010070096

申请日：2010-12-17

Applicant: SINCROTRONE TRIESTE S C P A ,  INST STEFAN JOSEF ,  GREGORATTI LUCA ,  PELOI MARCO ,  KOSEC MARIJA ,  KUSCER HROVATIN DANJELA ,  PALMA GIUSEPPINA

Inventor： GREGORATTI LUCA ,  PELOI MARCO ,  KOSEC MARIJA ,  KUSCER HROVATIN DANJELA ,  PALMA GIUSEPPINA

IPC: B41M3/14 ,  B01J19/12 ,  C01D15/04 ,  C09K11/61

CPC classification number: C01D15/04 ,  B41M3/144 ,  C01P2004/50 ,  C01P2004/51 ,  C01P2004/62 ,  C01P2006/60

Abstract: It is describes a material in the form of lithium fluoride powder containing colour centres and the method for its preparation, by the formation of colour centres based on irradiating the powder with synchrotron radiation (light). The method involves mechanically reducing the size of the particles that form the LiF powder and the formation of colour centres therein by its exposure to synchrotron radiation. The so activated powder, which maintains the transparency characteristics of the original material if exposed to sunlight, can find wide use as an additive both in common printing inks and in pigments used in the artistic field to be used for the formation of marks on artefacts for anti-counterfeiting/identification purposes.

Abstract translation: 它描述了一种含有色心的氟化锂粉末形式的材料及其制备方法，通过基于用同步辐射（光）照射粉末形成色心。 该方法涉及机械地减小形成LiF粉末的颗粒的尺寸并通过其暴露于同步辐射而在其中形成色心。 如此活化的粉末如果暴露在阳光下能保持原始材料的透明特性，则可广泛用作普通印刷油墨和用于艺术领域的颜料中的添加剂，用于在人工制品上形成标记 防伪/识别目的。

公开(公告)号：WO2011016741A3

公开(公告)日：2011-11-17

申请号：PCT/PT2010000037

申请日：2010-08-05

Applicant: UNIV NOVA DE LISBOA ,  INST STEFAN JOSEF ,  UNIV BARCELONA ,  DE PAIVA MARTINS RODRIGO FERRAO ,  CORREIA FORTUNATO ELVIRA MARIA ,  CANDIDO BARQUINHA PEDRO MIGUEL ,  NUNES PEREIRA LUIS MIGUEL ,  GONCALVES GONCALO PEDRO ,  KUSCER HROVATIN DANJELA ,  KOSEC MARIJA

Inventor： DE PAIVA MARTINS RODRIGO FERRAO ,  CORREIA FORTUNATO ELVIRA MARIA ,  CANDIDO BARQUINHA PEDRO MIGUEL ,  NUNES PEREIRA LUIS MIGUEL ,  GONCALVES GONCALO PEDRO ,  KUSCER HROVATIN DANJELA ,  KOSEC MARIJA

IPC: H01L21/316

CPC classification number: H01L21/31604 ,  H01L21/0215 ,  H01L21/02178 ,  H01L21/02183 ,  H01L21/02194 ,  H01L21/02266 ,  H01L21/28194 ,  H01L29/517 ,  H01L29/7869

Abstract: High performance thin-film, transistors entirely processed at temperatures not exceeding 150°C, using amorphous multi component dielectrics based on t.he mixture of high band gap and high dielectric constant ( K) materials are presented in this invention. The invention relates to the use of sputtered or ink jet printed mixed dielectric materials such as Ta2O5 with SiO2 or Al2O3 or HfO2 with SiO2 or Al2O3. These multicomponent dielectrics allow producing amorphous dielectrics to be introduced in high stable electronic devices with low leakage currents, while preserving a high dielectric constant. This results in producing thin film transistors with remarkable electrical properties, such as the ones produced based on Ga-In-Zn oxide as channel layers and where the dielectric was the combination of the mixture Ta2O5:SiO2, exhibiting field- effect mobility exceeding 35 cm2 V-1 s-1, close to 0 V turn- on voltage, on/off ratio higher than 106 and subthreshold slope below 0.24 V dec-1.

Abstract translation: 本发明提出了使用基于高带隙和高介电常数（K）材料的混合物的非晶多组分电介质，在不超过150℃的温度下完全加工的高性能薄膜。 本发明涉及使用溅射或喷墨印刷的混合电介质材料，例如具有SiO 2或Al 2 O 3或HfO 2的Ta 2 O 5与SiO 2或Al 2 O 3。 这些多组分电介质允许产生非晶电介质，以便在具有低泄漏电流的高稳定电子器件中引入，同时保持高的介电常数。 这导致产生具有显着电性能的薄膜晶体管，例如基于Ga-In-Zn氧化物作为沟道层产生的薄膜晶体管，并且其中电介质是混合物Ta 2 O 5：SiO 2的组合，显示场效应迁移率超过35cm 2 V-1 s-1，接近0 V导通电压，开/关比高于106，亚阈值斜率低于0.24 V dec-1。

公开(公告)号：WO2011073399A2

公开(公告)日：2011-06-23

申请号：PCT/EP2010/070096

申请日：2010-12-17

Applicant: SINCROTRONE TRIESTE S.C.P.A. ,  JOZEF STEFAN INSTITUTE ,  GREGORATTI, Luca ,  PELOI, Marco ,  KOSEC, Marija ,  KUSCER HROVATIN, Danjela ,  PALMA, Giuseppina

Inventor： GREGORATTI, Luca ,  PELOI, Marco ,  KOSEC, Marija ,  KUSCER HROVATIN, Danjela ,  PALMA, Giuseppina

IPC: B41M3/14 ,  C01D15/04

CPC classification number: C01D15/04 ,  B41M3/144 ,  C01P2004/50 ,  C01P2004/51 ,  C01P2004/62 ,  C01P2006/60

Abstract: It is describes a material in the form of lithium fluoride powder containing colour centres and the method for its preparation, by the formation of colour centres based on irradiating the powder with synchrotron radiation (light). The method involves mechanically reducing the size of the particles that form the LiF powder and the formation of colour centres therein by its exposure to synchrotron radiation. The so activated powder, which maintains the transparency characteristics of the original material if exposed to sunlight, can find wide use as an additive both in common printing inks and in pigments used in the artistic field to be used for the formation of marks on artefacts for anti-counterfeiting/identification purposes.

Abstract translation: 描述了以含有色心的氟化锂粉末的形式的材料及其制备方法，通过基于用同步辐射（光）照射粉末形成色中心。 该方法包括通过暴露于同步辐射来机械地减小形成LiF粉末的颗粒的尺寸和其中的颜色中心的形成。 如果暴露于阳光下，保持原始材料的透明性的这样活化的粉末可以广泛用作常规印刷油墨和用于在艺术领域中用于在人造物上形成标记的颜料中的添加剂 防伪/识别目的。

公开(公告)号：WO2011016741A2

公开(公告)日：2011-02-10

申请号：PCT/PT2010/000037

申请日：2010-08-05

Applicant: FACULDADE DE CIÊNCIAS E TECNOLOGIA DA UNIVERSIDADE NOVA DE LISBOA ,  JOZEF STEFAN INSTITUTE ,  UNIVERSIDAD DE BARCELONA ,  DE PAIVA MARTINS, Rodrigo Ferrão ,  CORREIA FORTUNATO, Elvira Maria ,  CÂNDIDO BARQUINHA, Pedro Miguel ,  NUNES PEREIRA, Luís Miguel ,  GONÇALVES, Gonçalo Pedro ,  KUŠCER HROVATIN, Danjela ,  KOSEC, Marija

Inventor： DE PAIVA MARTINS, Rodrigo Ferrão ,  CORREIA FORTUNATO, Elvira Maria ,  CÂNDIDO BARQUINHA, Pedro Miguel ,  NUNES PEREIRA, Luís Miguel ,  GONÇALVES, Gonçalo Pedro ,  KUŠCER HROVATIN, Danjela ,  KOSEC, Marija

IPC: H01L21/316

CPC classification number: H01L21/31604 ,  H01L21/0215 ,  H01L21/02178 ,  H01L21/02183 ,  H01L21/02194 ,  H01L21/02266 ,  H01L21/28194 ,  H01L29/517 ,  H01L29/7869

Abstract: High performance thin-film, transistors entirely processed at temperatures not exceeding 150°C, using amorphous multi component dielectrics based on τ.he mixture of high band gap and high dielectric constant ( K) materials are presented in this invention. The invention relates to the use of sputtered or ink jet printed mixed dielectric materials such as Ta 2 O 5 with SiO 2 or Al 2 O 3 or HfO 2 with SiO 2 or Al 2 O 3 . These multicomponent dielectrics allow producing amorphous dielectrics to be introduced in high stable electronic devices with low leakage currents, while preserving a high dielectric constant. This results in producing thin film transistors with remarkable electrical properties, such as the ones produced based on Ga-In-Zn oxide as channel layers and where the dielectric was the combination of the mixture Ta 2 O 5 :SiO 2 , exhibiting field- effect mobility exceeding 35 cm 2 V -1 s -1 , close to 0 V turn- on voltage, on/off ratio higher than 10 6 and subthreshold slope below 0.24 V dec -1 .

Abstract translation: 提出了使用基于τ高混合带隙和高介电常数（K）材料的非晶多组分电介质在温度不超过150℃完全处理的高性能薄膜晶体管 在本发明中。 本发明涉及溅射或喷墨印刷的混合电介质材料如Ta 2 O 5与SiO 2或Al 2 O 3的用途， 2 0 3或HfO 2：其中SiO 2或Al 2 O 3： /子>。 这些多组分电介质允许将非晶电介质引入具有低漏电流的高稳定电子器件中，同时保持高介电常数。 这导致生产具有显着电性能的薄膜晶体管，例如基于Ga-In-Zn氧化物制成的薄膜晶体管作为沟道层，并且其中电介质是混合物Ta 2 O _{5：SiO 2 2，其场效应迁移率超过35cm 2·V -1 -1 s -1 接近于0V的导通电压，开/关比高于10-6，亚阈值斜率低于0.24V dec--1 。}