公开(公告)号：WO2012078064A1

公开(公告)日：2012-06-14

申请号：PCT/PT2010/000063

申请日：2010-12-10

Applicant: REVIGRÉS - INDÚSTRIA DE REVESTIMENTOS DE GRÉS, LDA ,  J. COELHO DA SILVA, SA ,  DOMINÓ - INDÚSTRIAS CERÂMICAS SA ,  ADENE - AGÊNCIA PARA A ENERGIA ,  CTCV - CENTRO TECNOLÓGICO DA CERÂMICA E DO VIDRO ,  DE VIRIS - NATURA E AMBIENTE SA ,  INETI - INSTITUTO NACIONAL DE ENGENHARIA, TECNOLOGIA E INOVAÇÃO, I.P ,  CENTRO DE INVESTIGAÇÃO EM MATERIAIS-CENIMAT DA FCTUNL ,  UNIVERSIDADE DO MINHO ,  MERCÊS FERREIRA, Isabel Maria ,  BRITO ÁGUAS, Hugo Manuel ,  PEDRO DE GOMES, Lúcia Isabel ,  DOS SANTOS RODRIGUES, Maria João ,  CORREIA FORTUNATO, Elvira Maria ,  FERRÃO DE PAIVA MARTINS, Rodrigo ,  PINTO TEIXEIRA, Vasco Manuel

Inventor： MERCÊS FERREIRA, Isabel Maria ,  BRITO ÁGUAS, Hugo Manuel ,  PEDRO DE GOMES, Lúcia Isabel ,  DOS SANTOS RODRIGUES, Maria João ,  CORREIA FORTUNATO, Elvira Maria ,  FERRÃO DE PAIVA MARTINS, Rodrigo ,  PINTO TEIXEIRA, Vasco Manuel

IPC: H01L31/0224 ,  H01L31/0392 ,  H01L31/048 ,  H01L31/076 ,  H01L31/0725 ,  H01L31/075

CPC classification number: H01L31/076 ,  H01L31/022466 ,  H01L31/0392 ,  H02S20/25 ,  H02S20/26 ,  Y02B10/12 ,  Y02E10/548

Abstract: A presente invenção descreve azulejos, telhas e mosaicos, entre outros revestimentos cerâmicos, fotovoltaicos, e seu fabrico, para aplicação directa na arquitectura que incorporam de raiz os contactos metálicos (7) e a estrutura do tipo pin ou nip, singulares ou em multiestrutura (2, 3, 4) ou similar, de materiais semicondutores covalentes ou semicondutores iónicos, ou da sua combinação, capaz de gerar energia eléctrica de corrente directa quando exposta a uma radiação luminosa associada ao espectro do visível. A invenção compreende ainda o substrato e o seu tratamento superficial (6) e contactos eléctricos frontal (1) e posterior (5). As estruturas semicondutoras em consideração podem ser do tipo: silício nanocristalino ou polimorfo ou amorfo, em estrutura simples ou em multicamada; ou estruturas à base de óxidos semicondutores tipo p e n; ou ainda estruturas híbridas envolvendo os dois tipos de estruturas, singulares ou em multicamada.

Abstract translation: 本发明描述了墙壁，屋顶和马赛克瓷砖以及其他光伏陶瓷衬里及其制造，用于直接用于建筑物中，并且具有并入金属触点（7）和销或压区结构，单独或组装在复合结构中 2,3,4）等由共价或离子半导体材料或它们的组合制成，当暴露于可见光谱中的光辐射时能产生直流电能。 本发明还包括基板，表面处理（6），前电触头（1）和后电触头（5）。 这些半导体结构可以是具有单层或多层结构的纳米晶体，多晶或非晶硅类型; 它们可以是p型和n型半导体氧化物结构; 或包括两种类型的结构，单层或多层结构的混合结构。

公开(公告)号：WO2011125036A1

公开(公告)日：2011-10-13

申请号：PCT/IB2011/051487

申请日：2011-04-06

Applicant: FACULDADE DE CIÊNCIAS E TECNOLOGIA DA UNIVERSIDADE NOVA DE LISBOA ,  ELECTRONIC AND TELECOMMUNICATIONS RESEARCH INSTITUTE ,  CORREIA FORTUNATO, Elvira Maria ,  DE PAIVA MARTINS, Rodrigo Ferrão ,  XAROUCO DE BARROS, Ana Raquel ,  DE OLIVEIRA CORREIA, Nuno Filipe ,  LOUREIRO FIGUEIREDO, Vitor Manuel ,  CÂNDIDO BARQUINHA, Pedro Miguel ,  KO PARK, Sang-Hee ,  HWANG, Chi-Sun

Inventor： CORREIA FORTUNATO, Elvira Maria ,  DE PAIVA MARTINS, Rodrigo Ferrão ,  XAROUCO DE BARROS, Ana Raquel ,  DE OLIVEIRA CORREIA, Nuno Filipe ,  LOUREIRO FIGUEIREDO, Vitor Manuel ,  CÂNDIDO BARQUINHA, Pedro Miguel ,  KO PARK, Sang-Hee ,  HWANG, Chi-Sun

IPC: H01L21/02 ,  H01L21/36 ,  H01L21/16

CPC classification number: H01L29/247 ,  H01L21/02521 ,  H01L21/02565 ,  H01L21/02579 ,  H01L21/02628 ,  H01L21/02631

Abstract: The present invention relates to thin films comprising non- stoichiometric monoxides of: copper (OCu 2 ) x with embedded cubic metal copper (Cu cy ) [ (OCu 2 ) x + (Cu 1-2 ) y , wherein 0.05≤x αx with embedded metal tin (Sn βx ) [ (OSn) z + (Sn 1-2 ) w wherein 0.05 cx -Sn βx alloys with embedded metal Sn and Cu [ (O-Cu- Sn) a + (Cu α -Sn β ) b with 0 x with embedded Ni and Sn species [ (O-Ni ) a + (Ni α -Sn β ) b with 0

Abstract translation: 本发明涉及包含非化学计量的一价铜氧化物（Cu 2 O x）x与具有嵌入的立方金属铜（Cu 2+）的非化学计量的一氧化物的薄膜， sub> cy ）[（sub-2）sub-x _{+（cu sub-1-2 ） y ，其中0.05≤x<1和0.01≤y≤0.9; 的锡（OSn）αx与嵌入的金属锡（Snβx）[（OSn）zn +（Sn 1-2） 其中0.05}

公开(公告)号：WO2011039576A1

公开(公告)日：2011-04-07

申请号：PCT/IB2009/054423

申请日：2009-10-08

Applicant: FACULDADE DE CIÊNCIAS E TECNOLOGIA DA UNIVERSIDADE NOVA DE LISBOA ,  DE PAIVA MARTINS, Rodrigo Ferrão ,  CORREIA FORTUNATO, Elvira Maria ,  MERCÊS FERREIRA, Isabel Maria ,  MIRANDA RIBEIRO BORGES, João Paulo ,  BERNARDINO BAPTISTA, Ana Catarina ,  DE ALBUQUERQUE BRÁS, Bruno André

Inventor： DE PAIVA MARTINS, Rodrigo Ferrão ,  CORREIA FORTUNATO, Elvira Maria ,  MERCÊS FERREIRA, Isabel Maria ,  MIRANDA RIBEIRO BORGES, João Paulo ,  BERNARDINO BAPTISTA, Ana Catarina ,  DE ALBUQUERQUE BRÁS, Bruno André

IPC: H01M2/16 ,  H01M10/04 ,  H01M10/36 ,  H01M10/38 ,  H01M4/04 ,  H01M8/02

CPC classification number: H01M4/0426 ,  H01M2/162 ,  H01M2/1626 ,  H01M4/0407 ,  H01M4/0419 ,  H01M4/0428 ,  H01M6/30 ,  H01M6/40 ,  H01M8/0289 ,  H01M10/0436 ,  H01M10/36 ,  H01M10/38 ,  H01M10/425 ,  H01M2300/0002 ,  Y02P70/56

Abstract: Dispositivo flexível de produção ou armazenamento de energia, ou ambas as funções, fabricado em substratos de celulose ou seus derivados, que actuam como suporte e elemento activo no dispositivo. Uma única estrutura é composta por substrato que funciona também como separador, suporte físico e electrólito (1), ânodo (2) e cátodo (3). O substrato é constituído por uma matriz de fibras celulósicas naturais, sintéticas ou mistas, processadas por diferentes técnicas. As fibras de base celulósica simples ou aditivadas permitem a permuta iónica entre ânodo e cátodo, actuam como electrólito e funcionam em simultâneo como suporte físico do dispositivo. A matriz de fibras é revestida em ambas as faces, recorrendo a técnicas de deposição de filmes finos, com materiais que actuam como eléctrodos, incluindo uma ou várias camadas de materiais metálicos, óxidos metálicos, ou semicondutores.

Abstract translation: 在纤维素或其衍生物的基底上制造灵活的能量储存和/或生成装置，其作为装置的支撑和有源元件。 单一结构包括也用作分离器，物理支撑和电解质（1），阳极（2）和阴极（3）的基板。 基材由天然的，合成的或混合的纤维素纤维的基质组成，其通过不同的技术加工。 简单或添加的纤维素基纤维允许阳极和阴极之间的离子交换作为电解质，同时作为器件的物理支持工作。 使用薄膜沉积技术在两个侧面上涂覆纤维基质，其中电极材料包括一层或多层金属材料，金属氧化物或半导体。

公开(公告)号：WO2009115913A2

公开(公告)日：2009-09-24

申请号：PCT/IB2009/005053

申请日：2009-03-20

Applicant: UNIVERSIDADE NOVA DE LISBOA ,  FERRÃO DE PAIVA MARTINS, Rodrigo ,  CORREIA FORTUNATO, Elvira Maria ,  NUNES PEREIRA, Luís, Migual ,  CÂNDIDO BARQUINHA, Pedro, Miguelpt ,  DE OLIVEIRA CORREIA, Nuno, Filipe

Inventor： FERRÃO DE PAIVA MARTINS, Rodrigo ,  CORREIA FORTUNATO, Elvira Maria ,  NUNES PEREIRA, Luís, Migual ,  CÂNDIDO BARQUINHA, Pedro, Miguelpt ,  DE OLIVEIRA CORREIA, Nuno, Filipe

CPC classification number: D21H13/02 ,  D21H11/00 ,  H01L51/0097 ,  H01L51/052 ,  Y02E10/549 ,  Y02P70/521

Abstract: A presente invencão consiste na utilizacáo e criacão de material à base de fibras celulósicas naturais, fibras sintéticas, ou mistas como suporte físico e meio armazenador ou indutor de armazenamento de cargas eléctricas e iónicas em transístores de efeito de campo singulares ou complementares como memória não volátil auto-sustentáveis usando semicondutores activos orgânicos ou inorgânicos para o fabrico das regiões de canal que se depositam sobre as fibras do material bem como de metáis ou semicondutores passivos para o fabrico do dreno e fonte, que permitem a interligacão das fibras, para além do contacto porta existente na outra face do papel, respectivamente tipo p ou n, nas formas monolíticas ou híbridas.

Abstract translation: 本发明在于使用和生产基于天然纤维素纤维，合成纤维或混合纤维的材料作为物理载体并且在具有非自由的离子或离子电荷的自持离散或互补的场效应晶体管中存储电和离子电荷的介质或储存诱导剂 通过使用有机或无机活性半导体制造沉积在材料纤维上的通道区域以及用于制造漏极和源极的金属或无源半导体，允许纤维之间的互连，除了 存在于纸的另一侧上的相应的p型或n型栅电极接触件，以单片或混合形式。

公开(公告)号：WO2008097117A1

公开(公告)日：2008-08-14

申请号：PCT/PT2007/000008

申请日：2007-02-05

Applicant: UNIVERSIDADE NOVA DE LISBOA ,  FERRÃO DE PAIVA MARTINS, Rodrigo ,  CORREIA FORTUNATO, Elvira Maria

Inventor： FERRÃO DE PAIVA MARTINS, Rodrigo ,  CORREIA FORTUNATO, Elvira Maria

IPC: H01L21/363

CPC classification number: H01L21/02381 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02581 ,  H01L21/02631 ,  H01L21/8252 ,  H01L21/8254 ,  H01L27/0605 ,  H01L29/7869

Abstract: The present invention corresponds to the use of p and n-type oxide semiconductors based on copper nickel (OCu x Ni y , with 0 O C and their applications in optoelectronic and electronic fields is to manufacture devices, such as, Complementary-Metal-Oxide-Semiconductors, thin film transistors, pn heterojunctions, logic gates, O-ring oscillators, using as substrate glass, metal foils, polymers or cellulose materials, in which a protection layer based on magnesium fluoride is used, together with a tantalum oxide matching layer of the active semiconductors to a dielectric, such as, silicon dioxide.

Abstract translation: 本发明对应于使用基于铜镍（OCu x N y Ni y）的p和n型氧化物半导体，其中0

公开(公告)号：WO2011016741A3

公开(公告)日：2011-11-17

申请号：PCT/PT2010000037

申请日：2010-08-05

Applicant: UNIV NOVA DE LISBOA ,  INST STEFAN JOSEF ,  UNIV BARCELONA ,  DE PAIVA MARTINS RODRIGO FERRAO ,  CORREIA FORTUNATO ELVIRA MARIA ,  CANDIDO BARQUINHA PEDRO MIGUEL ,  NUNES PEREIRA LUIS MIGUEL ,  GONCALVES GONCALO PEDRO ,  KUSCER HROVATIN DANJELA ,  KOSEC MARIJA

Inventor： DE PAIVA MARTINS RODRIGO FERRAO ,  CORREIA FORTUNATO ELVIRA MARIA ,  CANDIDO BARQUINHA PEDRO MIGUEL ,  NUNES PEREIRA LUIS MIGUEL ,  GONCALVES GONCALO PEDRO ,  KUSCER HROVATIN DANJELA ,  KOSEC MARIJA

IPC: H01L21/316

CPC classification number: H01L21/31604 ,  H01L21/0215 ,  H01L21/02178 ,  H01L21/02183 ,  H01L21/02194 ,  H01L21/02266 ,  H01L21/28194 ,  H01L29/517 ,  H01L29/7869

Abstract: High performance thin-film, transistors entirely processed at temperatures not exceeding 150°C, using amorphous multi component dielectrics based on t.he mixture of high band gap and high dielectric constant ( K) materials are presented in this invention. The invention relates to the use of sputtered or ink jet printed mixed dielectric materials such as Ta2O5 with SiO2 or Al2O3 or HfO2 with SiO2 or Al2O3. These multicomponent dielectrics allow producing amorphous dielectrics to be introduced in high stable electronic devices with low leakage currents, while preserving a high dielectric constant. This results in producing thin film transistors with remarkable electrical properties, such as the ones produced based on Ga-In-Zn oxide as channel layers and where the dielectric was the combination of the mixture Ta2O5:SiO2, exhibiting field- effect mobility exceeding 35 cm2 V-1 s-1, close to 0 V turn- on voltage, on/off ratio higher than 106 and subthreshold slope below 0.24 V dec-1.

Abstract translation: 本发明提出了使用基于高带隙和高介电常数（K）材料的混合物的非晶多组分电介质，在不超过150℃的温度下完全加工的高性能薄膜。 本发明涉及使用溅射或喷墨印刷的混合电介质材料，例如具有SiO 2或Al 2 O 3或HfO 2的Ta 2 O 5与SiO 2或Al 2 O 3。 这些多组分电介质允许产生非晶电介质，以便在具有低泄漏电流的高稳定电子器件中引入，同时保持高的介电常数。 这导致产生具有显着电性能的薄膜晶体管，例如基于Ga-In-Zn氧化物作为沟道层产生的薄膜晶体管，并且其中电介质是混合物Ta 2 O 5：SiO 2的组合，显示场效应迁移率超过35cm 2 V-1 s-1，接近0 V导通电压，开/关比高于106，亚阈值斜率低于0.24 V dec-1。

公开(公告)号：WO2009115913A4

公开(公告)日：2010-04-15

申请号：PCT/IB2009005053

申请日：2009-03-20

Applicant: UNIV NOVA DE LISBOA ,  FERRAO DE PAIVA MARTINS RODRIGO ,  CORREIA FORTUNATO ELVIRA MARIA ,  NUNES PEREIRA LUIS MIGUAL ,  CANDIDO BARQUINHA PEDRO MIGUEL ,  DE OLIVEIRA CORREIA NUNO FILIPE

Inventor： FERRAO DE PAIVA MARTINS RODRIGO ,  CORREIA FORTUNATO ELVIRA MARIA ,  NUNES PEREIRA LUIS MIGUAL ,  CANDIDO BARQUINHA PEDRO MIGUEL ,  DE OLIVEIRA CORREIA NUNO FILIPE

IPC: H01L51/10

CPC classification number: D21H13/02 ,  D21H11/00 ,  H01L51/0097 ,  H01L51/052 ,  Y02E10/549

Abstract: Embodiments of the present disclosure provide for the use and creation of materials based on natural cellulose fibres, synthetic fibres, or mixed fibres as physical Support and storing medium or storage inducer of electrical and ionic charges in self-sustaining discrete or complementary field-effect transistors with non-volatile memory by using organic or inorganic active semi-conductors (1) for the manufacture of the Channel regions that is deposited on the fibres of the paper material (2)as well as metals or passive semiconductors for the manufacture of drain and source (5), allowing the interconnection of fiber, in addition to the gate electrode (3) existing on the other side of the paper, respectively,p or n type, in monolithic or hybrid forms.

Abstract translation: 本公开的实施方案提供了使用和产生基于天然纤维素纤维，合成纤维或混合纤维的材料，作为物理支持和存储自支撑离散或互补场效应晶体管中的电荷和离子电荷的介质或储存诱导剂 通过使用有机或无机活性半导体（1）制造沉积在纸材料（2）的纤维上的通道区域以及用于制造排水管的金属或无源半导体的非易失性存储器， 源（5），除了存在于纸张另一侧的栅电极（3）之外，还分别以单片或混合形式互连p或n型光纤。

公开(公告)号：WO2009115913A3

公开(公告)日：2009-12-23

申请号：PCT/IB2009005053

申请日：2009-03-20

Applicant: UNIV NOVA DE LISBOA ,  FERRAO DE PAIVA MARTINS RODRIG ,  CORREIA FORTUNATO ELVIRA MARIA ,  NUNES PEREIRA LUIS MIGUAL ,  CANDIDO BARQUINHA PEDRO MIGUEL ,  DE OLIVEIRA CORREIA NUNO FILIP

Inventor： FERRAO DE PAIVA MARTINS RODRIGO ,  CORREIA FORTUNATO ELVIRA MARIA ,  NUNES PEREIRA LUIS MIGUAL ,  CANDIDO BARQUINHA PEDRO MIGUELPT ,  DE OLIVEIRA CORREIA NUNO FILIP

IPC: H01L51/10

CPC classification number: D21H13/02 ,  D21H11/00 ,  H01L51/0097 ,  H01L51/052 ,  Y02E10/549

Abstract: Embodiments of the present disclosure provide for the use and creation of materials based on natural cellulose f ihres, synthetic fibres, or mixed fibres as physical Support and storing medium or storage inducer of electrical and ionic charges in self-sustaining discrete or complementary field-ef f ect transistors with non-volatile memory by using organic or inorganic active semi-conductors (1) for the manufacture of the Channel regions that is deposited on the fibres of the paper material (2)as well as metals or passive semiconductors for the manufacture of drain and source (5), allowing the interconnestion of fiber, in addition to the gate electrode (3) existing on the other side of the paper, respectively,p or n type, in monolithic or hybrid f orms.

Abstract translation: 本公开的实施方案提供了使用和产生基于天然纤维素纤维素，合成纤维或混合纤维的材料，作为物理支持和储存电荷和离子电荷的介质或储存诱导剂在自持离散或互补的场效应 通过使用有机或无机活性半导体（1）制造沉积在纸材料（2）的纤维上的通道区域以及用于制造的金属或无源半导体的具有非易失性存储器的晶体管 的漏极和源极（5），除了存在于纸张另一侧的栅电极（3）之外，还可以在单​​片或混合电源中分别互相连接p或n型光纤。

公开(公告)号：WO2009130551A1

公开(公告)日：2009-10-29

申请号：PCT/IB2009000565

申请日：2009-03-20

Applicant: UNIV NOVA DE LISBOA ,  FERRAO DE PAIVA MARTINS RODRIG ,  CORREIA FORTUNATO ELVIRA MARIA

Inventor： FERRAO DE PAIVA MARTINS RODRIGO ,  CORREIA FORTUNATO ELVIRA MARIA

IPC: H01L51/00 ,  H01L51/05

CPC classification number: H01L51/0096 ,  H01L29/78603 ,  H01L51/0097 ,  H01L51/052 ,  Y02E10/549 ,  Y02P70/521

Abstract: Embodiments of the present disclosure provide for the use and creation of natural cellulosic material, synthetic or mixed fibers hereafter designated as paper and the corresponding production process to be used simultaneously as physical and dielectric support in the creation of new field effect electronic or optoelectronic devices, called C- MOS structured electronic devices, whose paper electronic is now on called interstrate in which its functionality depends on the electrical charge capacity per unit area of the paper to accumulate electronic and ionic charges, function of how the forming fibers are distribute and compacted along the paper surface and thickness, as well as how the upmost surface close fibers are coated by an active ionic or covalent semiconductor and allowing the production of flexible self sustained devices, disposable devices, based on the new interstrate integrated concept, of monolithic or hybrid types.

Abstract translation: 本公开的实施方案提供了天然纤维素材料，以下指定为纸的合成或混合纤维的使用和产生，以及在创建新的场效应电子或光电子器件时同时用作物理和电介质支持的相应生产方法， 称为C-MOS结构化电子器件，其纸电子现在称为interstrate，其功能取决于纸张的每单位面积的电荷容量以积累电子和离子电荷，成形纤维如何分布和压实 纸张表面和厚度，以及最上表面如何通过活性离子或共价半导体包覆纤维，并允许基于单一或混合类型的新的内部集成概念生产柔性自持装置，一次性装置 。

公开(公告)号：WO2008029374A3

公开(公告)日：2008-08-21

申请号：PCT/IB2007053614

申请日：2007-09-07

Applicant: UNIV NOVA DE LISBOA ,  FERRAO DE PAIVA MARTINS RODRIG ,  RIBEIRO VIANA BAPTISTA PEDRO M ,  CORREIA FORTUNATO ELVIRA MARIA

Inventor： FERRAO DE PAIVA MARTINS RODRIG ,  RIBEIRO VIANA BAPTISTA PEDRO M ,  CORREIA FORTUNATO ELVIRA MARIA

IPC: G01N33/543 ,  G01N21/25 ,  H01L51/42

CPC classification number: G01N33/54373 ,  G01N21/31 ,  Y10T436/14 ,  Y10T436/143333

Abstract: The present invention relates to a system and process for detection and/or qualitative and quantitative identification of the biological material, such as specific sequences of nucleic acids or proteins as antibodies, present in biological samples. The system is composed by one or more light sources (1) combined with one or more integrated optical photo sensors, or not, and various electronic components (4), necessary for obtaining/ processing of the signal emitted by the metal nanoprobes functionalized with a solution of biological composite, as well as also a micro-controller and a microprocessor, fixed or portable. This photosensor structure is able to detect and to quantify the colour variations produced by metal nanoprobes, being this preferentially gold, functionalized by oligonucleotides complementary to specific DNA/RNA sequences, proteins, as for instance antibodies and/or antigens related with certain disease, or other sample or solution of biological composite, that are to be investigated. The detection and quantification process is based on the response of a photosensor, singular or integrated, based on thin film technology of amorphous, nanocrystalline or microcrystalline silicon and their alloys, as well as the new active ceramic semiconductors, amorphous and not amorphous.

Abstract translation: 本发明涉及用于检测和/或定性和定量鉴定生物样品中存在的生物材料（例如作为抗体的核酸或蛋白质的特定序列）的系统和方法。 该系统由一个或多个与一个或多个集成光学光传感器组合的光源（1）以及各种电子元件（4）组成，这些元件对于获得/处理由金属纳米探针发射的信号是必要的， 生物复合材料的解决方案，以及固定或便携式的微控制器和微处理器。 该光电传感器结构能够检测和定量由金属纳米探针产生的颜色变化，优选为金，通过与特定DNA / RNA序列，蛋白质（例如与某些疾病有关的抗体和/或抗原）互补的寡核苷酸， 生物复合材料的其他样品或溶液，要进行调查。 基于非晶，纳米晶或微晶硅及其合金的薄膜技术以及非晶态和非晶态的新型活性陶瓷半导体，检测和量化过程基于光电传感器的响应，单一或集成。