公开(公告)号：WO2008124154A2

公开(公告)日：2008-10-16

申请号：PCT/US2008/004564

申请日：2008-04-09

Applicant: AMBERWAVE SYSTEMS CORPORATION ,  LI, Jizhong ,  LOCHTEFELD, Anthony, J. ,  SHEEN, Calvin ,  CHENG, Zhiyuan

Inventor： LI, Jizhong ,  LOCHTEFELD, Anthony, J. ,  SHEEN, Calvin ,  CHENG, Zhiyuan

IPC: H01L31/04 ,  H01L31/18

CPC classification number: H01L31/035281 ,  H01L31/047 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/184 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

Abstract: Structures including crystalline material disposed in openings defined in a non-crystalline mask layer disposed over a substrate. A photovoltaic cell may be disposed above the crystalline material.

Abstract translation: 包括设置在设置在基板上的非结晶掩模层中限定的开口中的结晶材料的结构。 光伏电池可以设置在结晶材料上方。

公开(公告)号：WO2008030574A1

公开(公告)日：2008-03-13

申请号：PCT/US2007/019568

申请日：2007-09-07

Applicant: AMBERWAVE SYSTEMS CORPORATION ,  BAI, Jie ,  PARK, Ji-soo ,  LOCHTEFELD, Anthony, J.

Inventor： BAI, Jie ,  PARK, Ji-soo ,  LOCHTEFELD, Anthony, J.

IPC: H01L21/20

CPC classification number: H01L29/045 ,  C30B25/183 ,  C30B29/40 ,  C30B29/48 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02598 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/0688 ,  H01L29/165 ,  H01L29/32

Abstract: Lattice-mismatched epitaxial films formed proximate non-crystalline sidewalls. Embodiments of the invention include formation of facets that direct dislocations in the films to the sidewalls.

Abstract translation: 在非晶体侧壁附近形成晶格不匹配的外延膜。 本发明的实施例包括形成将薄膜中的位错引导到侧壁的小平面。

公开(公告)号：WO2006125040A2

公开(公告)日：2006-11-23

申请号：PCT/US2006/019152

申请日：2006-05-17

Applicant: AMBERWAVE SYSTEMS CORPORATION ,  LOCHTEFELD, Anthony, J. ,  CURRIE, Matthew, T. ,  CHENG, Zhiyuan ,  FIORENZA, James ,  BRAITHWAITE, Glyn ,  LANGDO, Thomas, A.

Inventor： LOCHTEFELD, Anthony, J. ,  CURRIE, Matthew, T. ,  CHENG, Zhiyuan ,  FIORENZA, James ,  BRAITHWAITE, Glyn ,  LANGDO, Thomas, A.

IPC: H01L21/20

CPC classification number: H01L21/02647 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/7624 ,  H01L21/8258 ,  H01L29/66795 ,  H01L29/785

Abstract: Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations, as well as fabrication of semiconductor devices based on such lattice-mismatched heterostructures.

Abstract translation: 具有有限区域的单片晶格失配的半导体异质结构的制造，其具有基本上耗尽穿透位错的上部，以及基于这种晶格失配的异质结构的半导体器件的制造。

公开(公告)号：WO2004081982A2

公开(公告)日：2004-09-23

申请号：PCT/US2004/006844

申请日：2004-03-05

Applicant: AMBERWAVE SYSTEMS CORPORATION ,  CURRIE, Mathew, T. ,  LOCHTEFELD, Anthony, J.

Inventor： CURRIE, Mathew, T. ,  LOCHTEFELD, Anthony, J.

IPC: H01L

CPC classification number: H01L29/66628 ,  H01L21/76224 ,  H01L21/823412 ,  H01L21/823807 ,  H01L21/823878 ,  H01L29/1054 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7842 ,  H01L29/785

Abstract: A structure including a transistor and a trench structure, with the trench structure inducing only a portion of the strain in a channel region of the transistor.

Abstract translation: 包括晶体管和沟槽结构的结构，其中沟槽结构仅在晶体管的沟道区域中诱发应变的一部分。

公开(公告)号：WO2009035746A2

公开(公告)日：2009-03-19

申请号：PCT/US2008068377

申请日：2008-06-26

Applicant: AMBERWAVE SYSTEMS CORP ,  FIORENZA JAMES ,  LOCHTEFELD ANTHONY J

Inventor： FIORENZA JAMES ,  LOCHTEFELD ANTHONY J

IPC: H01L31/048 ,  H01L31/078

CPC classification number: H01L31/0384 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L31/043 ,  H01L31/0687 ,  H01L31/078 ,  H01L31/1852 ,  H01L31/1892 ,  Y02E10/544

Abstract: Solar cell structures including multiple sub-cells that incorporate different materials that may have different lattice constants. In some embodiments, solar cell devices include several photovoltaic junctions.

Abstract translation: 包括多个子电池的太阳能电池结构包含可能具有不同晶格常数的不同材料。 在一些实施例中，太阳能电池器件包括多个光伏结。

公开(公告)号：WO2008051503A3

公开(公告)日：2008-07-31

申请号：PCT/US2007022392

申请日：2007-10-19

Applicant: AMBERWAVE SYSTEMS CORP ,  LI JIZHONG ,  LOCHTEFELD ANTHONY J

Inventor： LI JIZHONG ,  LOCHTEFELD ANTHONY J

IPC: H01S5/02 ,  H01L33/00 ,  H01L33/12 ,  H01S3/227

CPC classification number: H01L33/16 ,  H01L21/02381 ,  H01L21/02524 ,  H01L21/02538 ,  H01L21/02546 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/0066 ,  H01L33/08 ,  H01L33/12 ,  H01S5/0207 ,  H01S5/223 ,  H01S5/2234 ,  H01S5/227 ,  H01S5/3202

Abstract: Some aspects for the invention. include a method and a structure including a light -emitting device (300, 300') disposed over a second crystalline semiconductor material (140) formed over a semiconductor substrate (100) comprising a first crystalline material. In some embodiments, the second crystalline semiconductor material (140) is proved in a trench (120) defined in a dielectric layer (110) which is disposed over said substrate (100). In some embodiments, the second crystalline semiconductor material is a lattice-mismatched to the first crystalline semiconductor material.

Abstract translation: 本发明的一些方面。 包括一种方法和结构，包括设置在形成在包括第一结晶材料的半导体衬底（100）之上的第二晶体半导体材料（140）上的发光器件（300,300'）。 在一些实施例中，第二晶体半导体材料（140）被证明在限定在设置在所述衬底（100）上的电介质层（110）中的沟槽（120）中。 在一些实施例中，第二晶体半导体材料与第一晶体半导体材料晶格失配。

公开(公告)号：WO2008039495A1

公开(公告)日：2008-04-03

申请号：PCT/US2007/020777

申请日：2007-09-26

Applicant: AMBERWAVE SYSTEMS CORPORATION ,  LOCHTEFELD, Anthony, J.

Inventor： LOCHTEFELD, Anthony, J.

IPC: H01L21/336 ,  H01L21/20

CPC classification number: H01L29/78687 ,  H01L29/66795 ,  H01L29/7851 ,  H01L29/78681

Abstract: Semiconductor structures include a trench formed proximate a substrate including a first semiconductor material. A crystalline material including a second semiconductor material lattice mismatched to the first semiconductor material is formed in the trench. Process embodiments include removing a portion of the dielectric layer to expose a side portion of the crystalline material and defining a gate thereover. Defects are reduced by using an aspect ratio trapping approach.

Abstract translation: 半导体结构包括在包括第一半导体材料的衬底附近形成的沟槽。 在沟槽中形成包括与第一半导体材料错配的第二半导体材料晶格的结晶材料。 工艺实施例包括去除电介质层的一部分以暴露晶体材料的侧部并在其上限定栅极。 通过使用宽高比捕获方法来减少缺陷。

公开(公告)号：WO2008036256A1

公开(公告)日：2008-03-27

申请号：PCT/US2007/020181

申请日：2007-09-18

Applicant: AMBERWAVE SYSTEMS CORPORATION ,  LOCHTEFELD, Anthony, J. ,  FIORENZA, James

Inventor： LOCHTEFELD, Anthony, J. ,  FIORENZA, James

IPC: H01L21/8258

CPC classification number: H01L21/8258 ,  H01L21/02381 ,  H01L21/02538 ,  H01L21/02551 ,  H01L21/823412 ,  H01L27/0605

Abstract: Structures and methods for their formation include a substrate comprising a first semiconductor material, with a second semiconductor material disposed thereover, the first semiconductor material being lattice mismatched to the second semiconductor material. Defects are reduced by using an aspect ratio trapping approach.

Abstract translation: 用于它们的形成的结构和方法包括：包含第一半导体材料的衬底，其上设置有第二半导体材料，第一半导体材料与第二半导体材料晶格失配。 通过使用宽高比捕获方法来减少缺陷。

公开(公告)号：WO2006125040A3

公开(公告)日：2007-02-22

申请号：PCT/US2006019152

申请日：2006-05-17

Applicant: AMBERWAVE SYSTEMS CORP ,  LOCHTEFELD ANTHONY J ,  CURRIE MATTHEW T ,  CHENG ZHIYUAN ,  FIORENZA JAMES ,  BRAITHWAITE GLYN ,  LANGDO THOMAS A

Inventor： LOCHTEFELD ANTHONY J ,  CURRIE MATTHEW T ,  CHENG ZHIYUAN ,  FIORENZA JAMES ,  BRAITHWAITE GLYN ,  LANGDO THOMAS A

IPC: H01L21/20

CPC classification number: H01L21/02647 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/7624 ,  H01L21/8258 ,  H01L29/66795 ,  H01L29/785

Abstract: Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations, as well as fabrication of semiconductor devices based on such lattice-mismatched heterostructures.

Abstract translation: 具有有限区域的单片晶格不匹配的半导体异质结构的制造，其具有基本上耗尽穿透位错的上部，以及基于这种晶格失配的异质结构的半导体器件的制造。

公开(公告)号：WO2008124154A3

公开(公告)日：2009-12-03

申请号：PCT/US2008004564

申请日：2008-04-09

Applicant: AMBERWAVE SYSTEMS CORP ,  LI JIZHONG ,  LOCHTEFELD ANTHONY J ,  SHEEN CALVIN ,  CHENG ZHIYUAN

Inventor： LI JIZHONG ,  LOCHTEFELD ANTHONY J ,  SHEEN CALVIN ,  CHENG ZHIYUAN

IPC: H01L31/068 ,  H01L31/18

CPC classification number: H01L31/035281 ,  H01L31/047 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/184 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

Abstract: Structures including crystalline material disposed in openings defined in a non-crystalline mask layer disposed over a substrate. A photovoltaic cell may be disposed above the crystalline material.

Abstract translation: 包括设置在设置在基板上的非结晶掩模层中限定的开口中的结晶材料的结构。 光伏电池可以设置在结晶材料上方。