Abstract:
A bonding plate mechanism for use in anodic bonding of first and second material sheets together, the apparatus comprising: a base including first and second spaced apart surfaces; a thermal insulator supported by the second surface of the base and operable to impede heat transfer to the base; a heating disk directly or indirectly coupled to the insulator and operable to produce heat in response to electrical power; and a thermal spreader directly or indirectly coupled to the heating disk and operable to at least channel heat from the heating disk, and impart voltage, to the first material sheet, wherein the heat and voltage imparted to the first material sheet are in accordance with respective heating and voltage profiles to assist in the anodic bonding of the first and second material sheets, and a thermal inertia of the bonding plate mechanism is relatively low such that heating of the first material sheet to a temperature of about 600 ?C or greater is achieved in less than about one-half hour.
Abstract:
Glass articles for use as covers in electronic devices and methods for forming the same are described herein. The glass articles generally include a shaped glass substrate comprising a first face, a second face and a perimeter edge. The shaped glass substrate may be formed from strengthened glass such that the shaped glass substrate has a compressive stress layer which improves the ability of the glass article to withstand surface damage without cracking. A polymer overmold is coupled to the attachment feature of the perimeter edge of the shaped glass substrate thereby protecting the perimeter edge of the shaped glass substrate from damage. In one embodiment, at least a portion of the perimeter edge of the shaped glass substrate comprises an attachment feature offset from the first face. In another embodiment the polymer overmold is integrally formed with at least one connector.
Abstract:
An anodic bonding apparatus includes: a first bonding plate mechanism operable to engage a first material sheet, and to provide at least one of controlled heating, voltage, and cooling thereto; a second bonding plate mechanism operable to engage a second material sheet, and to provide at least one of controlled heating, voltage, and cooling thereto; a pressure mechanism operatively coupled to the first and second bonding plate mechanisms and operable to urge the first and second bonding plate mechanisms toward one another to achieve controlled pressure of the first and second material sheets against one another along respective surfaces thereof; a control unit operable to produce control signals to the first and second bonding plate mechanisms and the pressure mechanism to provide heating, voltage, and pressure profiles sufficient to achieve anodic bonding between the first and second material sheets.
Abstract:
An anodic bonding apparatus includes: a first bonding plate mechanism operable to engage a first material sheet, and to provide at least one of controlled heating, voltage, and cooling thereto; a second bonding plate mechanism operable to engage a second material sheet, and to provide at least one of controlled heating, voltage, and cooling thereto; a pressure mechanism operatively coupled to the first and second bonding plate mechanisms and operable to urge the first and second bonding plate mechanisms toward one another to achieve controlled pressure of the first and second material sheets against one another along respective surfaces thereof; a control unit operable to produce control signals to the first and second bonding plate mechanisms and the pressure mechanism to provide heating, voltage, and pressure profiles sufficient to achieve anodic bonding between the first and second material sheets.
Abstract:
Methods and apparatus provide for imparting a controlled supply of gas to at least one Bernoulli chuck to provide a balanced draw and repellant gas flow to a material sheet; and at least one of: elevating a temperature of the supply of gas to the at least one Bernoulli chuck such that the gas flow to the material sheet is provided at the elevated temperature, providing a stream of gas to an insulator substrate to promote separation of an exfoliation layer from a donor semiconductor wafer, and providing a stream of gas to a junction of the insulator substrate and any support structure to promote separation of the insulator substrate and the supporting structure.
Abstract:
A bonding plate mechanism for use in anodic bonding of first and second material sheets together, the apparatus comprising: a base including first and second spaced apart surfaces; a thermal insulator supported by the second surface of the base and operable to impede heat transfer to the base; a heating disk directly or indirectly coupled to the insulator and operable to produce heat in response to electrical power; and a thermal spreader directly or indirectly coupled to the heating disk and operable to at least channel heat from the heating disk, and impart voltage, to the first material sheet, wherein the heat and voltage imparted to the first material sheet are in accordance with respective heating and voltage profiles to assist in the anodic bonding of the first and second material sheets, and a thermal inertia of the bonding plate mechanism is relatively low such that heating of the first material sheet to a temperature of about 600 ?C or greater is achieved in less than about one-half hour.