公开(公告)号：WO2009155208A2

公开(公告)日：2009-12-23

申请号：PCT/US2009047103

申请日：2009-06-11

Applicant: APPLIED MATERIALS INC ,  CAO YONG ,  EWERT MAURICE E ,  TANG XIANMIN ,  MILLER KEITH A ,  LUBBEN DANIEL C ,  KELKAR UMESH M ,  GUNG TZA-JING ,  SUBRAMANI ANANTHA K

Inventor： CAO YONG ,  EWERT MAURICE E ,  TANG XIANMIN ,  MILLER KEITH A ,  LUBBEN DANIEL C ,  KELKAR UMESH M ,  GUNG TZA-JING ,  SUBRAMANI ANANTHA K

IPC: C23C14/34 ,  C23C14/54

CPC classification number: C23C14/35 ,  C23C14/046 ,  H01J37/34 ,  H01J37/3447

Abstract: Embodiments of the present invention generally relate to an apparatus and method for uniform sputter depositing of materials into the bottom and sidewalls of high aspect ratio features on a substrate. In one embodiment, a sputter deposition system includes a collimator that has apertures having aspect ratios that decrease from a central region of the collimator to a peripheral region of the collimator. In one embodiment, the collimator is coupled to a grounded shield via a bracket member that includes a combination of internally and externally threaded fasteners. In another embodiment, the collimator is integrally attached to a grounded shield. In one embodiment, a method of sputter depositing material includes pulsing the bias on the substrate support between high and low values.

Abstract translation: 本发明的实施例一般涉及用于均匀溅射沉积到衬底上的高纵横比特征的底部和侧壁中的装置和方法。 在一个实施例中，溅射沉积系统包括准直器，其具有从准直器的中心区域到准直器的外围区域的纵横比减小的孔。 在一个实施例中，准直器经由包括内螺纹紧固件和外螺纹紧固件的组合的支架构件联接到接地屏蔽件。 在另一个实施例中，准直器一体地附接到接地屏蔽。 在一个实施例中，溅射沉积材料的方法包括在高和低值之间使衬底支撑上的偏压脉动。

公开(公告)号：WO2009085157A1

公开(公告)日：2009-07-09

申请号：PCT/US2008/013766

申请日：2008-12-16

Applicant: APPLIED MATERIALS, INC. ,  MILLER, Keith, A. ,  LUBBEN, Daniel, C.

Inventor： MILLER, Keith, A. ,  LUBBEN, Daniel, C.

IPC: H01L21/203

CPC classification number: C23C14/35 ,  H01J37/3408 ,  H01J37/3482

Abstract: When a magnetron (72) is scanned about the back of a target (38) in a selected complex path (150) having radial components, the target erosion profile has a form depending upon the selection of paths. A radial erosion rate profile (160) for a given magnetron is measured. Periodically during scanning, an erosion profile (168) is calculated from the measured erosion rate profile (160) and profiles (162, 164, 166) derived from it, the time the magnetron spends at different radii, and the target power. The calculated erosion profile may be used to indicate when erosion has become excessive at any location prompting target replacement or to adjust the height of the magnetron above the target for repeated scans, hi another aspect of the invention, the magnetron height is dynamically adjusted (206) during a scan to compensate for erosion. The compensation may be based on the calculated erosion profile or on feedback control of the present value of the target voltage (124) for a constant-power target supply (110).

Abstract translation: 当在具有径向分量的选定复合路径（150）中围绕目标（38）的背面扫描磁控管（72）时，目标侵蚀曲线具有取决于路径选择的形式。 测量给定磁控管的径向侵蚀速率曲线（160）。 在扫描期间，根据测得的侵蚀速率曲线（160）和衍生自其的轮廓（162,164,166），磁控管在不同半径处的时间和目标功率计算出侵蚀曲线（168）。 所计算的侵蚀曲线可用于指示在任何位置处的侵蚀已经变得过度，促使目标更换或调整靶上方的磁控管的高度以重复扫描。在本发明的另一方面，磁控管高度被动态地调节（206 ），以补偿侵蚀。 补偿可以基于所计算的侵蚀曲线或者针对恒定功率目标电源（110）的目标电压（124）的当前值的反馈控制。

公开(公告)号：WO2009155208A3

公开(公告)日：2009-12-23

申请号：PCT/US2009/047103

申请日：2009-06-11

Applicant: APPLIED MATERIALS, INC. ,  CAO, Yong ,  EWERT, Maurice E. ,  TANG, Xianmin ,  MILLER, Keith A. ,  LUBBEN, Daniel C. ,  KELKAR, Umesh M. ,  GUNG, Tza-Jing ,  SUBRAMANI, Anantha K.

Inventor： CAO, Yong ,  EWERT, Maurice E. ,  TANG, Xianmin ,  MILLER, Keith A. ,  LUBBEN, Daniel C. ,  KELKAR, Umesh M. ,  GUNG, Tza-Jing ,  SUBRAMANI, Anantha K.

IPC: C23C14/34 ,  C23C14/54

Abstract: Embodiments of the present invention generally relate to an apparatus and method for uniform sputter depositing of materials into the bottom and sidewalls of high aspect ratio features on a substrate. In one embodiment, a sputter deposition system includes a collimator that has apertures having aspect ratios that decrease from a central region of the collimator to a peripheral region of the collimator. In one embodiment, the collimator is coupled to a grounded shield via a bracket member that includes a combination of internally and externally threaded fasteners. In another embodiment, the collimator is integrally attached to a grounded shield. In one embodiment, a method of sputter depositing material includes pulsing the bias on the substrate support between high and low values.

公开(公告)号：WO2003042424A1

公开(公告)日：2003-05-22

申请号：PCT/US2002/036940

申请日：2002-11-14

Applicant: APPLIED MATERIALS, INC. ,  DING, Peijun ,  TAO, Rong ,  XU, Zheng ,  LUBBEN, Daniel, C. ,  RENGARAJAN, Suraj ,  MILLER, Michael, A. ,  SUNDARRAJAN, Arvind ,  TANG, Xianmin ,  FORSTER, John, C. ,  FU, Jianming ,  MOSELY, Roderick, C. ,  CHEN, Fusen ,  GOPALRAJA, Praburam

Inventor： DING, Peijun ,  TAO, Rong ,  XU, Zheng ,  LUBBEN, Daniel, C. ,  RENGARAJAN, Suraj ,  MILLER, Michael, A. ,  SUNDARRAJAN, Arvind ,  TANG, Xianmin ,  FORSTER, John, C. ,  FU, Jianming ,  MOSELY, Roderick, C. ,  CHEN, Fusen ,  GOPALRAJA, Praburam

IPC: C23C14/34

CPC classification number: H01L21/76844 ,  C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/358 ,  H01J37/321 ,  H01J37/3408 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76873 ,  H01L21/76877 ,  H01L2221/1089

Abstract: A magnetron sputter reactor (410) and its method of use, in which SIP sputtering and ICP sputtering are promoted is disclosed. In another chamber (412) an array of auxiliary magnets positioned along sidewalls (414) of a magnetron sputter reactor on a side towards the wafer from the target is disclosed. The magnetron (436) preferably is a small one having a stronger outer pole (442) of a first polarity surrounding a weaker inner pole (440) of a second polarity all on a yoke (444) and rotates about the axis (438) of the chamber using rotation means (446, 448, 450). The auxiliary magnets (462) preferably have the first polarity to draw the unbalanced magnetic field (460) towards the wafer (424), which is on a pedestal (422) supplied with power (454). Argon (426) is supplied through a valve (428). The target (416) is supplied with power (434).

Abstract translation: 公开了一种促进SIP溅射和ICP溅射的磁控溅射反应器（410）及其使用方法。 在另一个室（412）中，公开了一种辅助磁体阵列，其沿着磁控溅射反应器的侧面（414）定位，所述磁控溅射反应器在朝向晶片的一侧朝向靶。 优选地，磁控管（436）是小的，其具有第一极性的更强的外极（442），其具有围绕轭（444）的第二极性的较弱内极（440），并且围绕轴线（438）旋转 所述室使用旋转装置（446,448,450）。 辅助磁体（462）优选地具有第一极性，以将不平衡磁场（460）朝着被提供电力（454）的基座（422）上的晶片（424）拉出。 氩（426）通过阀（428）供应。 目标（416）被供电（434）。