Abstract:
In a method of reducing or undoing progressive threshold shift in a thin-film-transistor (TFT) circuit, first and second voltages applied to source and gate terminals of a first transistor cause the first transistor to conduct and apply the first voltage to the gate terminal of the second transistor. The first voltage applied to the gate terminal of the second transistor coacts with a reference voltage coupled to the source terminal of the second transistor via an LED element to cause the second transistor to not conduct whereupon the LED element does not receive electrical power. After a first predetermined period of time sufficient to reduce or undo a progressive threshold shift in the second transistor, the application of the first voltage to the gate terminal of the second transistor is terminated.v t stabilization of tfts in oled backplanes
Abstract:
In a shadow mask vapor deposition system, a first conductor is vapor deposited on a substrate and an insulator is vapor deposited on the first conductor. A second conductor is then vapor deposited on at least the insulator. The insulator layer is plasma etched either before or after the vapor deposition of the second conductor to define in the insulator layer a via hole through which at least a portion of the first conductor is exposed. An electrical connection is established between the first and second conductors by way of the via hole.
Abstract:
A scalable tiled display assembly that includes an array of independently addressed actie-matrix organic light-emitting diode (OLED) display tiles cabled to a central control module. Each display tile includes a frame, a driver sub-module, and a flat ribbon cable for connecting the driver sub-module to the display tile. Furthermore, column and row drivers are integrated within each display tile for improved performance and minimal external connections. The invention further includes a method of forming a scalable tiled display system that includes the steps of assembling a plurality of display tile assemblies, determining the viewable area of the display, assembling an array of display tile assemblies according to the desired viewable area, and activating the scalable tiled display system.
Abstract:
Electronic devices are formed on a substrate that is advanced stepwise through a plurality of deposition vessels. Each deposition vessel includes a source of deposition material and has at least two shadow masks associated therewith. Each of the two masks is alternately positioned within the corresponding deposition vessel for patterning the deposition material onto the substrate through apertures in the mask positioned therein, and positioned in an adjacent cleaning vessel for mask cleaning. The patterning onto the substrate and the cleaning of at least one of the masks are performed concurrently.
Abstract:
A system and method for active array temperature sensing and cooling. The system includes an active temperature sensing layer, a thermoelectric cooling layer and a heatsink layer. The temperature sensing layer is formed of temperature sensing elements that sense the temperature gradient across an unevenly heated region of the active array substrate. The thermoelectric cooling layer controls the temperature gradient sensed by the temperature sensing layer. The heatsink layer includes a plurality of cooling channels for absorbing thermal energy from the unevenly heated region. The system is under the control of a process control computer.
Abstract:
An LCD pixel includes a first conductive segment connected to a first bus, a first insulator segment on the first conductive segment, a second conductive segment on the first insulator segment, a liquid crystal material on the second conductive segment, a third conductive segment on the liquid crystal material, and a thin film transistor having a control terminal, a first power terminal and second power terminal connected to a second bus, a third bus and the second conductive segment, respectively. In response to application of a suitable signal on the second bus when reference voltages are present on the first bus and on the third conductive segment, and a voltage is applied to the third bus, the thin film transistor is operative for charging a capacitor formed by the first conductive segment, the first insulator segment and the second conductive segment and for activating the liquid crystal material.
Abstract:
Via holes are formed in a continuous inline shadow mask production system by depositing a first conductor layer and subsequently depositing a first insulator layer over a portion of the first conductor layer. The first insulator layer is deposited in a manner to define at least one notch along its edge. The second insulator layer is then deposited on another portion of the first conductor layer in a manner whereupon the second insulator layer slightly overlaps each notch of the first insulator layer, thereby forming the one or more via holes. A conductive filler can optionally be deposited in each via hole. Lastly, a second conductive layer can be deposited over the first insulator layer, the second insulator layer and, if provided, the conductive filler.
Abstract:
In a method of preparing and using an aperture mask, a temperature of an aperture mask is increased to a first, mounting temperature (T1), whereupon the size of the aperture mask increases according to its coefficient of thermal expansion (CTEam), until at least one dimension thereof is of a first desired extent. The temperature of a frame is also increased to T1, whereupon the size of the frame grows according to its coefficient of thermal expansion (CTEf), which is lower than CTEam. The aperture mask is fixedly mounted to the frame at T1. The frame mounted aperture mask is then used for depositing a material on a substrate at a deposition temperature T2 that is less than T1, whereupon the frame holds the shadow mask in tension with the one dimension at a second desired extent.
Abstract:
In a shadow mask vapor deposition system, a first conductor (610, Fig. 8A) is vapor deposited on a substrate (114) and an insulator (612) is vapor deposited on the first conductor. A second conductor (614a/614b) is then vapor deposited on at least the insulator (612). The insulator layer (612) is plasma etched either before or after the vapor deposition of the second conductor to define in the insulator layer a via hole (616) through which at least a portion of the first conductor is exposed. An electrical connection is established between the first and second conductors (610 and 614a/614b) by way of the via hole (616).
Abstract:
A multi-layer electronic device can be formed to include an insulative substrate (212), a first vapor deposited conductor layer (312) on the insulative substrate (212), a first vapor deposited insulator layer (314) on the first conductor layer (312), the first insulator layer (314) having at least one via hole (316) therein, and a vapor deposited conductive filler (320) in the via hole (316) of the first insulator layer (314). Desirably, the conductive filler (320) is deposited in the via hole (316) of the first insulator layer (314) such that the surface of the conductive filler (320) opposite the first conductor layer (312) is substantially planar with the surface of the first insulator layer (314) opposite the first conductor layer (312).