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    LIGHT EMITTING DEVICES HAVING A REFLECTIVE BOND PAD AND METHODS OF FABRICATING LIGHT EMITTING DEVICES HAVING REFLECTIVE BOND PADS
    2.
    发明申请
    LIGHT EMITTING DEVICES HAVING A REFLECTIVE BOND PAD AND METHODS OF FABRICATING LIGHT EMITTING DEVICES HAVING REFLECTIVE BOND PADS 审中-公开
    具有反射性粘合垫的发光装置和制造具有反射性粘结垫的发光装置的方法

    公开(公告)号：WO2006022873A2

    公开(公告)日：2006-03-02

    申请号：PCT/US2005/010873

    申请日：2005-03-30

    Applicant: CREE, INC. ,  HABERERN, Kevin W. ,  BERGMANN, Michael J. ,  MIECZKOWSKI, Van ,  EMERSON, David T.

    Inventor： HABERERN, Kevin W. ,  BERGMANN, Michael J. ,  MIECZKOWSKI, Van ,  EMERSON, David T.

    IPC: H01L33/40 ,  H01L33/42

    CPC classification number: H01L33/42 ,  H01L24/05 ,  H01L33/405 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

    Abstract: Light emitting devices include an active region of semiconductor material and a first contact on the active region. The first contact is configured such that photons emitted by the active region pass through the first contact. A photon absorbing wire bond pad is provided on the first contact. The wire bond pad has an area less than the area of the first contact. A reflective structure is disposed between the first contact and the wire bond pad such that the reflective structure has substantially the same area as the wire bond pad. A second contact is provided opposite the active region from the first contact. The reflective structure may be disposed only between the first contact and the wire bond pad. Methods of fabricating such devices are also provided.

    Abstract translation: 发光器件包括半导体材料的有源区和有源区上的第一接触。 第一触点配置成使得由有源区域发射的光子通过第一触点。 在第一触点上设置光子吸收引线键合焊盘。 接线焊盘的面积小于第一接触面积。 反射结构设置在第一触点和引线接合焊盘之间，使得反射结构具有与引线接合焊盘基本上相同的面积。 与第一触点相对的有源区域提供第二触点。 反射结构可以仅设置在第一触点和引线接合焊盘之间。 还提供了制造这种装置的方法。

    SEMICONDUCTOR DEVICES HAVING IMPROVED ADHESION AND METHODS OF FABRICATING THE SAME
    3.
    发明申请
    SEMICONDUCTOR DEVICES HAVING IMPROVED ADHESION AND METHODS OF FABRICATING THE SAME 审中-公开
    具有改进粘合性的半导体器件及其制造方法

    公开(公告)号：WO2011137040A1

    公开(公告)日：2011-11-03

    申请号：PCT/US2011/033562

    申请日：2011-04-22

    Applicant: CREE, INC. ,  MIECZKOWSKI, Van ,  HAGLEITNER, Helmut

    Inventor： MIECZKOWSKI, Van ,  HAGLEITNER, Helmut

    IPC: H01L29/15

    CPC classification number: H01L29/7787 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462

    Abstract: Wide bandgap semiconductor devices are fabricated by providing a wide bandgap semiconductor layer, providing a plurality of recesses in the wide bandgap semiconductor layer, and providing a metal gate contact in the plurality of recesses. A protective layer may be provided on the wide bandgap semiconductor layer, the protective layer having a first opening extending therethrough, a dielectric layer may be provided on the protective layer, the dielectric layer having a second opening extending therethrough that is narrower than the first opening, and a gate contact may be provided in the first and second openings. The metal gate contact may be provided to include a barrier metal layer in the plurality of recesses, and a current spreading layer on the barrier metal layer remote from the wide bandgap semiconductor layer. Related devices and fabrication methods are also discussed.

    Abstract translation: 宽带隙半导体器件通过提供宽带隙半导体层制造，在宽带隙半导体层中提供多个凹槽，并在多个凹槽中提供金属栅极接触。 可以在宽带隙半导体层上设置保护层，保护层具有延伸穿过其的第一开口，电介质层可以设置在保护层上，电介质层具有延伸穿过的第二开口，该第二开口窄于第一开口 并且可以在第一和第二开口中设置栅极接触。 可以提供金属栅极接触以在多个凹部中包括阻挡金属层，以及在远离宽带隙半导体层的阻挡金属层上的电流扩散层。 还讨论了相关设备和制造方法。

    MULTILAYER DIFFUSION BARRIERS FOR WIDE BANDGAP SCHOTTKY BARRIER DEVICES
    5.
    发明申请
    MULTILAYER DIFFUSION BARRIERS FOR WIDE BANDGAP SCHOTTKY BARRIER DEVICES 审中-公开
    用于宽带贴片屏障设备的多层扩展障碍

    公开(公告)号：WO2011115692A1

    公开(公告)日：2011-09-22

    申请号：PCT/US2011/021045

    申请日：2011-01-13

    Applicant: CREE, INC. ,  MIECZKOWSKI, Van ,  HAGLEITNER, Helmut ,  RING, Zoltan

    Inventor： MIECZKOWSKI, Van ,  HAGLEITNER, Helmut ,  RING, Zoltan

    IPC: H01L29/66

    CPC classification number: H01L29/475 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/7787

    Abstract: Semiconductor Schottky barrier devices include a wide bandgap semiconductor layer, a Schottky barrier metal layer on the wide bandgap semiconductor layer and forming a Schottky junction, a current spreading layer on the Schottky barrier metal layer remote from the wide bandgap semiconductor layer and two or more diffusion barrier layers between the current spreading layer and the Schottky barrier metal layer. The first diffusion barrier layer reduces mixing of the current spreading layer and the second diffusion barrier layer at temperatures of the Schottky junction above about 300°C and the second diffusion barrier layer reduces mixing of the first diffusion barrier layer and the Schottky barrier metal layer at the temperatures of the Schottky junction above about 300°C.

    Abstract translation: 半导体肖特基势垒器件包括宽带隙半导体层，宽带隙半导体层上的肖特基势垒金属层和形成肖特基结，在远离宽带隙半导体层的肖特基势垒金属层上的电流扩散层和两个或更多个扩散 电流扩散层和肖特基势垒金属层之间的阻挡层。 第一扩散阻挡层在约300℃以上的肖特基结温度下降低了电流扩散层和第二扩散阻挡层的混合，第二扩散阻挡层减小了第一扩散阻挡层和肖特基势垒金属层的混合 肖特基结的温度高于约300℃。

    LIGHT EMITTING DEVICES HAVING A REFLECTIVE BOND PAD AND METHODS OF FABRICATING LIGHT EMITTING DEVICES HAVING REFLECTIVE BOND PADS
    6.
    发明申请
    LIGHT EMITTING DEVICES HAVING A REFLECTIVE BOND PAD AND METHODS OF FABRICATING LIGHT EMITTING DEVICES HAVING REFLECTIVE BOND PADS 审中-公开
    具有反射性粘合垫的发光装置和制造具有反射性粘结垫的发光装置的方法

    公开(公告)号：WO2006022873A3

    公开(公告)日：2006-06-22

    申请号：PCT/US2005010873

    申请日：2005-03-30

    Applicant: CREE INC ,  HABERERN KEVIN W ,  BERGMANN MICHAEL J ,  MIECZKOWSKI VAN ,  EMERSON DAVID T

    Inventor： HABERERN KEVIN W ,  BERGMANN MICHAEL J ,  MIECZKOWSKI VAN ,  EMERSON DAVID T

    IPC: H01L33/40 ,  H01L33/42

    CPC classification number: H01L33/42 ,  H01L24/05 ,  H01L33/405 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

    Abstract: Light emitting devices include an active region (14) of semiconductor material and a first contact (18) on the active region. The first contact (18) is configured such that photons emitted by the active region (14) pass through the first contact. A photon absorbing wire bond pad (22) is provided on the first contact. The wire bond pad (22) has an area less than the area of the first contact. A reflective structure (30) is disposed between the first contact (18) and the wire bond pad (22) such that the reflective structure (30) has substantially the same area as the wire bond pad. A second contact (20) is provided opposite the active region from the first contact. The reflective structure (30) may be disposed only between the first contact and the wire bond pad. Methods of fabricating such devices are also provided.

    Abstract translation: 发光器件包括半导体材料的有源区（14）和有源区上的第一接触（18）。 第一触点（18）被配置为使得由有源区域（14）发射的光子通过第一触点。 光子吸收引线接合焊盘（22）设置在第一接触件上。 引线接合焊盘（22）的面积小于第一触点的面积。 反射结构（30）设置在第一触点（18）和引线接合焊盘（22）之间，使得反射结构（30）具有与引线接合焊盘基本相同的面积。 第二触点（20）设置成与第一触点相对的有源区域相对。 反射结构（30）可以仅设置在第一触点和引线接合焊盘之间。 还提供了制造这种装置的方法。

    THIN FILM RESISTOR AND METHOD FOR ITS PRODUCTION
    8.
    发明申请
    THIN FILM RESISTOR AND METHOD FOR ITS PRODUCTION 审中-公开
    薄膜电阻及其生产方法

    公开(公告)号：WO2012167009A1

    公开(公告)日：2012-12-06

    申请号：PCT/US2012/040359

    申请日：2012-06-01

    Applicant: CREE, INC. ,  MIECZKOWSKI, Van ,  GURGANUS, Jason

    Inventor： MIECZKOWSKI, Van ,  GURGANUS, Jason

    IPC: H01C1/034 ,  H01C7/00 ,  H01C17/075

    CPC classification number: H01C1/02 ,  H01C1/034 ,  H01C7/006 ,  H01C17/075

    Abstract: The present disclosure relates to a thin film resistor that is formed on a substrate along with other semiconductor devices to form all or part of an electronic circuit. The thin film resistor includes a resistor segment that is formed over the substrate and a protective cap that is formed over the resistor segment. The protective cap is provided to keep at least a portion of the resistor segment from oxidizing during fabrication of the thin film resistor and other components that are provided on the semiconductor substrate. As such, no oxide layer is formed between the resistor segment and the protective cap. Contacts for the thin film resistor may be provided at various locations on the protective cap, and as such, are not provided solely over a portion of the resistor segment that is covered with an oxide layer.

    Abstract translation: 本公开涉及一种薄膜电阻器，其与其它半导体器件一起形成在衬底上以形成电子电路的全部或部分。 薄膜电阻器包括形成在衬底上的电阻器段和形成在电阻器段上的保护帽。 提供保护盖以在薄膜电阻器和设置在半导体衬底上的其它部件的制造期间保持电阻器段的至少一部分不被氧化。 因此，在电阻器段和保护帽之间不形成氧化物层。 可以在保护盖上的各个位置设置用于薄膜电阻器的触点，因此，不仅仅在覆盖有氧化物层的电阻器段的一部分上提供。

    DEVICES WITH CRACK STOPS
    9.
    发明申请
    DEVICES WITH CRACK STOPS 审中-公开
    具有裂缝的装置

    公开(公告)号：WO2011062845A1

    公开(公告)日：2011-05-26

    申请号：PCT/US2010/056497

    申请日：2010-11-12

    Applicant: CREE, INC. ,  MIECZKOWSKI, Van Allen ,  NAMISHIA, Daniel, James

    Inventor： MIECZKOWSKI, Van Allen ,  NAMISHIA, Daniel, James

    IPC: H01L23/58 ,  H01L21/78 ,  H01L23/00

    CPC classification number: H01L21/78 ,  H01L21/6836 ,  H01L23/562 ,  H01L23/585 ,  H01L2221/68327 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    Abstract: An apparatus that comprises a device on a substrate and a crack stop in the substrate. Methods of forming a device are also disclosed. The methods may include providing a device, such as a semiconductor device, on a substrate having a first thickness, reducing the thickness of the substrate to a second thickness, and providing a crack stop in the substrate. Reducing the thickness of the substrate may include mounting the substrate to a carrier substrate for support and then removing the carrier substrate. The crack stop may prevent a crack from reaching the device.

    Abstract translation: 一种包括衬底上的器件和衬底中的裂纹阻挡的装置。 还公开了形成装置的方法。 所述方法可以包括在具有第一厚度的衬底上提供诸如半导体器件的器件，将衬底的厚度减小到第二厚度，以及在衬底中提供裂纹停止。 减小衬底的厚度可以包括将衬底安装到用于支撑的载体衬底上，然后移除载体衬底。 裂缝停止可以防止裂缝到达设备。

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