Abstract:
An optical assembly serves the purpose of being mounted in a projection exposure apparatus (101) for EUV microlithography and comprises at least one vacuum chamber (70, 71, 68a), at least one optical element (6, 7; 65, 66; 63) arranged in the vacuum chamber (70, 71, 68a), the optical element (6, 7; 65, 66; 63) having an optical surface (18) which may be impinged upon by a useful beam bundle (3) of the projection exposure apparatus (101), and a cleaning device (72) for cleaning the optical surface (18). The cleaning device (72) is configured to perform particle cleaning of the optical surface (18) at a gas pressure within the vacuum chamber (70,71, 68a) which is higher than a vacuum pressure (p0) for performing an exposure operation with the projection exposure apparatus (101). The result is an optical assembly capable of providing optical elements having an optical surface which may be impinged upon by a useful beam bundle which can be cleaned reliably from foreign particles.
Abstract:
A lithographic apparatus includes an illumination system configured to condition a beam of radiation, and a support structure configured to support a patterning device. The patterning device is configured to impart a pattern to the beam of radiation. The apparatus includes a patterning device cleaning system configured to provide an electrostatic force to contaminant particles that are on the patterning device and that are electrically charged by the beam of radiation, in order to remove the contaminant particles from the patterning device.
Abstract:
An optical element includes a first layer (4) that includes a first material, and is configured to be substantially reflective for radiation of a first wavelength and substantially transparent for radiation of a second wavelength. The optical element includes a second layer (2) that includes a second material, and is configured to be substantially absorptive or transparent for the radiation of the second wavelength. The optical element includes a third layer (3) that includes a third material between the first layer and the second layer, and is substantially transparent for the radiation of the second wavelength and configured to reduce reflection of the radiation of the second wavelength from a top surface of the second layer facing the first layer. The first layer is located upstream in the optical path of incoming radiation with respect to the second layer in order to improve spectral purity of the radiation of the first wavelength.
Abstract:
A lithographic apparatus for maskless EUV applications includes an illumination system constructed and arranged to condition a radiation beam and to supply the conditioned radiation beam to a spatial light modulator, a substrate table constructed and arranged to hold a substrate, and a projection system constructed and arranged to project the conditioned radiation beam onto a target portion of the substrate. The illumination system includes a field facet mirror constructed and arranged to define a field of the conditioned radiation beam. The field facet mirror is constructed and arranged to optically match a source of radiation and the illumination system.
Abstract:
A lithographic apparatus that includes an illumination system configured to condition a radiation beam. The illumination system includes a plurality of optical components. The apparatus also includes a support constructed to support a patterning device. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. The apparatus further includes a substrate table constructed to hold a substrate, and a projection system configured to project the patterned radiation beam onto a target portion of the substrate. The projection system includes a plurality of optical components. The apparatus also includes a contamination measurement unit for measuring contamination of a surface of at least one of the optical components. The contamination measurement unit is provided with a radiation sensor constructed and arranged to measure an optical characteristic of radiation received from the surface.
Abstract:
A lithographic apparatus is disclosed. The apparatus includes an illumination system that provides a beam of radiation, and a support structure that supports a patterning structure. The patterning structure is configured to impart the beam of radiation with a pattern in its cross-section. The apparatus also includes a substrate support that supports a substrate, a projection system that projects the patterned beam onto a target portion of the substrate, and a debris-mitigation system that mitigates debris particles which are formed during use of at least a part of the lithographic apparatus. The debris-mitigation system is arranged to apply a magnetic field so that at least charged debris particles are mitigated.
Abstract:
A lithographic apparatus (1) includes a radiation source (SO) configured to produce extreme ultraviolet radiation, the radiation source (SO) including a chamber (210) in which a plasma (225) is generated; a collector mirror (270) configured to reflect radiation emitted by the plasma (225); and a debris mitigation system (230) including a gas supply system (235) configured to supply a first gas flow (240) toward the plasma, the first gas flow (240) being selected to thermalize debris generated by the plasma (225), and a plurality of gas manifolds (247) arranged at a location proximate the collector mirror (270), the gas manifolds configured to supply a second gas flow (250) in the chamber (210), the second gas flow (250) being directed toward the plasma (225) to prevent thermalized debris from depositing on the collector mirror (270).
Abstract:
A spectral purity filter is configured to transmit extreme ultraviolet (EUV) radiation and deflect or absorb non-EUV secondary radiation. In an embodiment, the spectral purity filter includes a body of material highly transmissive of EUV radiation and a layer of material highly reflective of non-EUV secondary radiation located on a radiation incident side of the body. In an embodiment, the spectral purity filter includes a body of material highly transmissive of EUV radiation and a layer of high emissivity material on an end of the body.
Abstract:
A lithographic apparatus (1) includes a vessel (5) that encloses a component (40) with a test surface (4) to be probed for contamination control; and an optical probe configured to transmit and receive an optical probing beam (2). The vessel (5) includes a first optical port (8) configured to transfer the optical probing beam (2) towards the test surface (4), and a second optical port (9) configured to receive a reflected optical probing beam (3). The optical probe includes a light source (10) configured to provide the optical probing beam (2), a polarization conditioner (11) configured to provide a predefined polarization state to the probing beam (2), and a spectral analyzer (12). The polarization conditioner (11) is preset to provide a minimal transmission for a minimal transmission wavelength, and the spectral analyzer (12) is arranged to detect a wavelength shift of the minimal transmission wavelength in response to a polarization change due to the presence of contamination.
Abstract:
A lithographic apparatus (1) is disclosed that includes a projection system (7) configured to project a patterned radiation beam (9) onto a target portion of a substrate, a vacuum chamber (8) through which the patterned beam of radiation (9) is projected during use, and a purge (13, 16, 17) system configured to provide a purge gas flow in the chamber (8).