Abstract:
A radiation source comprising a chamber (1) and a supply of a plasma generating substance, the source having an interaction point (13) at which the plasma generating substance introduced into the chamber may interact with a laser beam (7) and thereby produce a radiation emitting plasma, wherein the source further comprises a conduit (11) arranged to deliver a buffer gas into the chamber, the conduit having an outlet (12) which is adjacent to the interaction point.
Abstract:
A lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is disclosed. The apparatus includes a first radiation dose detector (10A) and a second radiation dose detector (10B), each detector comprising a secondary electron emission surface (11) configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux, the first radiation dose detector located upstream with respect to the second radiation dose detector viewed with respect to a direction of radiation transmission, and a meter (13), connected to each detector, to detect a current or voltage resulting from the secondary electron emission from the respective electron emission surface.
Abstract:
An extreme ultraviolet (EUV) microscope configured to analyze a sample (5). The microscope includes a source (2) of EUV radiation constructed and arranged to generate the EUV radiation with a wavelength at least in a range of about 2 - 6 nm, and an optical system (3) constructed and arranged to illuminate the sample with the EUV radiation and to collect a radiation emanating (6) from the sample. The optical system is arranged with at least one mirror that includes a multilayer structure for in- phase reflection of at least a portion of the radiation in the range of about 2 - 6 nm.
Abstract:
An apparatus for forming a beam of electromagnetic radiation includes a plasma radiation source (24), and a foil trap (25) provided with a plurality of thin foils (20) that extend substantially parallel to the direction of radiation from the plasma source (20). A grid (22) is disposed between the plasma radiation source (20) and the foil trap (24). A space is located between the grid (22) and the foil trap (24). The apparatus also include an electrical potential application circuit (28) that is constructed and arranged to apply an electrical potential to the grid (22) so that the grid (22) repels electrons emitted by the plasma radiation source (22) and creates a positive space charge between the grid (20) and the foil trap (24) to deflect ions emitted by the plasma radiation source (20) to the foil trap (24).
Abstract:
A patterning device for a photolithographic apparatus is used to form a patterned radiation beam, by imparting a cross-sectional pattern to the radiation beam during reflection from the patterning device. The patterning device comprises a layer of phase-change material that is capable of locally undergoing an induced structural phase change into respective ones of a plurality of stable and/or metastable states. Furthermore, the patterning device comprises a radiation reflective structure with periodically arranged layers adjacent to the layer of phase-change material. The radiation reflective structures do not partake in the phase changes. By locally changing the phase of the phase-change material, the reflectivity of the whole structure is modified, for example due to thickness changes in the layer of phase-change material that lead to destructive interference of different components of the reflected light or due to changes in surface roughness of the radiation reflective structure.
Abstract:
A radiation system (1) for generating a beam of radiation (2) that defines an optical axis (3) is provided. The radiation system (1) includes a plasma produced discharge source (4) for generating EUV radiation. The discharge source (4) includes a pair of electrodes (5) constructed and arranged to be provided with a voltage difference, and a system for producing a plasma between the pair of electrodes (5) so as to provide a discharge (7) in the plasma between the electrodes (5). The radiation system (1) also includes a debris catching shield (11) for catching debris (8) from the electrodes (5). The debris catching shield (11) is constructed and arranged to shield the electrodes (5) from a line of sight provided in a predetermined spherical angle relative the optical axis (3), and to provide an aperture (12) to a central area (10) between the electrodes (5) in the line of sight.
Abstract:
A radiation source is disclosed that includes an anode and a cathode that are configured and arranged to create a discharge in a substance in a discharge space between the anode and the cathode and to form a plasma so as to generate electromagnetic radiation, the anode and the cathode being rotatably mounted around an axis of rotation, the cathode being arranged to hold a liquid metal. The radiation source further includes an activation source arranged to direct an energy beam onto the liquid metal so as to vaporize part of the liquid metal and a liquid metal provider arranged to supply additional liquid metal so as to compensate for the vaporized part of the liquid metal.
Abstract:
A lithographic apparatus includes a radiation source and an object with a first surface which is configured to retain metal contaminants. This surface has the function of a getter. The first surface is arranged substantially outside the region traversed by the radiation beam generated by the radiation source during lithographic processing. The first surface may further be used to retain volatile contaminants generated in a cleaning method.
Abstract:
A lithographic apparatus is disclosed. The apparatus includes a source for supplying hydrogen radicals, a guide for use in conjunction with the source, for directing hydrogen radicals to an application surface to be targeted by the hydrogen radicals. The guide is provided with a coating having a hydrogen radical recombination constant of less than 0.2. In this way, the radicals can be transported with reduced losses and are able to better interact with remaining contaminants on application surfaces, such as mirror surfaces
Abstract:
A lithographic apparatus includes an illumination system configured to condition a radiation beam substantially from a light emitting point. The illumination system includes a contaminant trapping system (CTS) . The trapping system includes a contaminant trap having a central zone (CZ) and a peripheral zone (PZ) . The trap includes a plurality of platelets (PF) that extend substantially outwards through the peripheral zone. The light emitting point (LEP) is in a plane with which the platelets coincide. Each of the platelets has a normal (N) with a component (Ctcz) directed towards the central zone.