Abstract:
Die Erfindung betrifft ein EUV-Lithographiesystem (1), umfassend: eine EUV- Lichtquelle (5) zur Erzeugung von EUV-Strahlung (7), die das EUV- Lithographiesystem (1 ) entlang eines EUV-Strahlengangs (6) durchläuft, mindestens ein optisches Element (8, 9, 10, 11, 13, 14), dessen optische Oberfläche (8a, 9a, 10a, 11 a, 13a, 14a) in dem EUV-Strahlengang (6) angeordnet ist, mindestens eine elektrisch leitende Struktur (17a-c), die den EUV-Strahlengang (6) in mindestens einem Abschnitt (6a-c) ringförmig umgibt und/oder die eine Gitterstruktur (17a-c) bildet, die mehrere an Knoten miteinander verbundene elektrische Leiter aufweist, sowie mindestens eine Spannungsquelle (18a-c) zum Erzeugen einer elektrischen Ladung (-) der mindestens einen elektrisch leitenden Struktur (17a-c) zum Ablenken von elektrisch geladenen kontaminierenden Partikeln (P) aus dem EUV- Strahlengang (6).
Abstract:
Die Erfindung betrifft eine Projektionsbelichtungsanlage (10) für die Halbleiterlithographie, mit einem Beleuchtungssystem (1) zum Beleuchten einer auf einem beweglichen Maskentisch (2) angeordneten Maske (3) und einem Projektionsobjektiv (4) zum Abbilden der Maske (3) auf ein Halbleitersubstrat (9), wobei mindestens ein Mittel (11,14, 44, 20, 17, 42, 15, 19) vorhanden ist, mindestens Teile des Beleuchtungssystems (1) und/oder des Projektionsobjektives (4) von dem Einfluss von Druckschwankungen in dem das Projektionsobjektiv (4) oder das Beleuchtungssystem (1) umgebende Medium, welche auf Bewegungen des Maskentisches (2) im Betrieb der Anlage (10) zurückgehen, mindestens teilweise zu entkoppeln.
Abstract:
Disclosed is a contamination trap arrangement (300) configured to trap debris particles that are generated with the formation of a plasma within a radiation source configured to generate extreme ultraviolet radiation. The contamination trap comprises a vane structure (310) for trapping the debris particles; a heating arrangement (330) for heating the vane structure, the heating arrangement being in thermal communication with the vane structure; a cooling arrangement (350) for transporting heat generated as a result of the plasma formation, away from the vane structure, and a gap (370) between the heating arrangement and the cooling arrangement. The cooling arrangement is in thermal communication with the vane structure via the heating arrangement and the gap and the contamination trap also comprises a heat transfer adjustment arrangement operable to adjust the heat transfer characteristics of a fluid inside of the gap by providing for controllable relative movement between the surfaces defining the gap.
Abstract:
The invention relates to a projection exposure apparatus (1) for microlithography for the production of semiconductor components, in which at least one optical assembly (9a) with at least one optical element (8a) which can be actuated in a mechanically controlled manner is mounted in a structure (6), wherein, for carrying out the mechanical actuation, a control signal transmission device (11) and/or an energy transmission device (12) are/is provided, which introduce(s) no parasitic mechanical effects into the optical assembly (9a) at least during specific operating states of the projection exposure apparatus (1).
Abstract:
Optical arrangement having a plurality of optical elements (8, 8'), the optical elements (8, 8') being capable of transmitted a beam (10), and there being provided at least one partial housing (9, 9') which extends from a surface of an optical element (8, 8') in the direction of the beam emanating from the optical element (8,8'), or of the beam incident on the optical element, and whose shape is adapted to the shape of the beam, the at least one partial housing (9, 9') being surrounded at least partially by a measurement structure (11) mechanically decoupled therefrom, and the measurement structure (11) having at least one sensor (12, 17).
Abstract:
A lithographic apparatus (1) includes a radiation source (SO) configured to produce extreme ultraviolet radiation, the radiation source (SO) including a chamber (210) in which a plasma (225) is generated; a collector mirror (270) configured to reflect radiation emitted by the plasma (225); and a debris mitigation system (230) including a gas supply system (235) configured to supply a first gas flow (240) toward the plasma, the first gas flow (240) being selected to thermalize debris generated by the plasma (225), and a plurality of gas manifolds (247) arranged at a location proximate the collector mirror (270), the gas manifolds configured to supply a second gas flow (250) in the chamber (210), the second gas flow (250) being directed toward the plasma (225) to prevent thermalized debris from depositing on the collector mirror (270).
Abstract:
A lithographic apparatus (1) is disclosed that includes a projection system (7) configured to project a patterned radiation beam (9) onto a target portion of a substrate, a vacuum chamber (8) through which the patterned beam of radiation (9) is projected during use, and a purge (13, 16, 17) system configured to provide a purge gas flow in the chamber (8).
Abstract:
Electric power is generated by using a generator (38) equipped with: a coil unit (38A) that is arranged on a barrel platform (50) and incorporates coils(39); and a magnet unit (38B) that has a magnet section (44) arranged on a protruding section (33a) of a column (30) separated from the barrel platform (50) in terms of vibration and generates an electromotive force in a non-contact state with the coils (39), and a motor (43) that drives the magnet section, and thus a wiring that supplies electric power to the barrel platform (50) does not have to be used. Accordingly, vibration that has been propagated to the barrel platform through the wiring can be precluded.
Abstract:
A debris prevention system is constructed and arranged to prevent debris that emanates from a radiation source (2) from propagating with radiation from the radiation source (2) into or within a lithographic apparatus. The debris prevention system includes an aperture (3) that defines a maximum emission angle (α) of the radiation coming from the radiation source (2), and a first debris barrier (4, 4') having a radiation transmittance. The first debris barrier (4. 41) includes a rotatable foil trap. The debris prevention system also includes a second debris barrier (5) that has a radiation transmittance. The first debris barrier (4, 4') is configured to cover a part of the emission angle and the second debris barrier (5) is configured to cover another part of the emission angle (θ).
Abstract:
A radiation system for generating a beam of radiation that defines an optical axis is provided. The radiation system includes a plasma produced discharge source for generating EUV radiation. The discharge source includes a pair of electrodes constructed and arranged to be provided with a voltage difference, and a system for producing a plasma between the pair of electrodes so as to provide a discharge in the plasma between the electrodes. The radiation system also includes a debris catching shield for catching debris from the electrodes. The debris catching shield is constructed and arranged to shield the electrodes from a line of sight provided in a predetermined spherical angle relative the optical axis, and to provide an aperture to a central area between the electrodes in the line of sight.