公开(公告)号：WO2011011348A2

公开(公告)日：2011-01-27

申请号：PCT/US2010/042503

申请日：2010-07-20

Applicant: OVSHINSKY INNOVATION, LLC ,  OVSHINSKY, Stanford

Inventor： OVSHINSKY, Stanford

IPC: H01L31/042 ,  H01L31/18

CPC classification number: H01L31/022425 ,  Y02E10/50

Abstract: A photovoltaic device including a current collection element and a method of making same. The photovoltaic device includes a substrate, a conductive layer, an active photovoltaic material, a transparent electrode and a current collection element. The current collection element includes a transparent support and one or more conductive wires integrated therewith. The conductive wires are in electrical communication with the transparent electrode. Current generated by the active photovoltaic material passes to the transparent electrode. The current collection element facilitates delivery of current passing through the transparent electrode to leads that deliver the current to an external load. The method includes placing a pre-fabricated current collection element in direct contact with the transparent electrode of the photovoltaic device. The time and expense of assembling the conductive wires during fabrication of the photovoltaic device is thereby avoided and higher manufacturing speeds are achieved.

Abstract translation: 包括集电元件的光伏装置及其制造方法。 该光伏器件包括衬底，导电层，活性光伏材料，透明电极和集电元件。 电流收集元件包括透明支撑件以及与其集成的一个或多个导电线。 导线与透明电极电连通。 由有源光伏材料产生的电流传递到透明电极。 电流收集元件便于将通过透明电极的电流输送到将电流输送到外部负载的引线。 该方法包括将预制电流收集元件放置成与光伏器件的透明电极直接接触。 由此避免了在制造光伏器件期间组装导线的时间和成本，并且实现了更高的制造速度。

公开(公告)号：WO2010124271A2

公开(公告)日：2010-10-28

申请号：PCT/US2010/032333

申请日：2010-04-26

Applicant: OVSHINSKY INNOVATION, LLC ,  OVSHINSKY, Stanford

Inventor： OVSHINSKY, Stanford

IPC: H01L31/18 ,  H01L31/042

CPC classification number: H01L21/02532 ,  C23C16/44 ,  C23C16/452 ,  C23C16/50 ,  C23C16/511 ,  H01J37/32009 ,  H01J37/32192 ,  H01J37/32761 ,  H01L21/0262

Abstract: A method and apparatus for forming thin film materials via a plasma deposition process in the presence of a magnetic field. A precursor is delivered to a deposition chamber and activated to form a plasma. The plasma may be initiated in the presence of a magnetic field or subjected to a magnetic field after initiation. The plasma includes ionized and neutral species derived from the precursor and the magnetic field manipulates the plasma to effect a reduction in the population of ionized species and an enhancement of the population of neutral species. A thin film material is subsequently formed from the resulting neutral-enriched deposition medium. The method permits formation of thin film materials having a low density of defects. In one embodiment, the thin film material is a photovoltaic material and the suppression of defects leads to an enhancement in photovoltaic efficiency.

Abstract translation: 一种在磁场存在下通过等离子体沉积工艺形成薄膜材料的方法和装置。 将前体输送到沉积室并激活以形成等离子体。 等离子体可以在磁场的存在下开始，或者在引发之后经受磁场。 等离子体包括源自前体的离子化和中性物质，并且磁场操纵等离子体以实现电离物质群体的减少和中性物种群体的增强。 随后由所得中性富集沉积介质形成薄膜材料。 该方法允许形成具有低密度缺陷的薄膜材料。 在一个实施例中，薄膜材料是光伏材料，并且缺陷的抑制导致光伏效率的提高。

公开(公告)号：WO2011044359A3

公开(公告)日：2011-10-06

申请号：PCT/US2010051818

申请日：2010-10-07

Applicant: OVSHINSKY INNOVATION LLC ,  OVSHINSKY STANFORD

Inventor： OVSHINSKY STANFORD

IPC: H01L31/18 ,  H01L21/20 ,  H01L31/042

CPC classification number: C23C16/452 ,  C23C16/54 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32752 ,  H01J37/32761 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/18

Abstract: A continuous thin film deposition apparatus that includes a remote plasma source. The source forms a plasma from a precursor and delivers a modified form of the plasma as a charge-depleted deposition medium to a deposition apparatus for formation of a thin film material. The thin film may be formed on a continuous web or other moving substrate. The charge-depleted deposition medium may be formed within the remote plasma source and delivered to an operatively coupled deposition apparatus or the charge-depleted deposition medium may form as the plasma exits the remote plasma source. The initial plasma is formed within the remote plasma source and includes a distribution of charged species (electrons and ions). The charge-depleted deposition medium contains a reduced concentration of the charged species and permits deposition of thin film materials having lower defect concentration. The thin film material may be a solar material.

Abstract translation: 包括远程等离子体源的连续薄膜沉积装置。 源从前体形成等离子体，并将改性形式的等离子体作为电荷耗尽的沉积介质输送到用于形成薄膜材料的沉积设备。 薄膜可以形成在连续的网或其他移动的基底上。 电荷耗尽的沉积介质可以形成在远程等离子体源内并且被传送到可操作地耦合的沉积设备，或者当等离子体离开远程等离子体源时可以形成电荷耗尽的沉积介质。 初始等离子体在远程等离子体源内形成并且包括带电物质（电子和离子）的分布。 电荷耗尽的沉积介质包含降低浓度的带电物质并允许沉积具有较低缺陷浓度的薄膜材料。 薄膜材料可以是太阳能材料。

公开(公告)号：WO2011044360A3

公开(公告)日：2011-08-04

申请号：PCT/US2010051821

申请日：2010-10-07

Applicant: OVSHINSKY INNOVATION LLC ,  OVSHINSKY STANFORD

Inventor： OVSHINSKY STANFORD

IPC: H01L31/18 ,  H01L21/20 ,  H01L31/042

CPC classification number: H01L31/206 ,  C23C16/513 ,  C23C16/545 ,  H01L31/0463 ,  H01L31/048 ,  H01L31/056 ,  H01L31/1884 ,  Y02E10/52 ,  Y02P70/521

Abstract: A method of forming photovoltaic devices and modules that includes an ambient pressure thin film deposition step. The central combination of the photovoltaic device structure includes a back reflector layer, active photovoltaic material and transparent electrode. The central combination is formed on a substrate having an electrical isolation layer deposited thereon. The device structure may further include an overlying protective layer remote from the substrate and a laminate on the backside of the substrate. The individual devices may be interconnected in series via a patterning process to form a monolithically integrated module. Module fabrication is preferably performed in a continuous fashion. One or more steps of module fabrication are performed with a plasma torch. Use of a plasma torch simplifies the manufacturing process by enabling deposition of the electrical isolation and/or protective layers at ambient pressure, including in air.

Abstract translation: 一种形成包括环境压力薄膜沉积步骤的光伏器件和模块的方法。 光电器件结构的中心组合包括背反射层，活性光伏材料和透明电极。 中心组合形成在其上沉积有电绝缘层的基板上。 器件结构还可以包括远离衬底的覆盖保护层和衬底背面上的层压体。 各个装置可以通过图案化过程串联连接以形成单片集成模块。 模块制造优选以连续的方式进行。 使用等离子体焰炬进行模块制造的一个或多个步骤。 等离子体焰炬的使用通过使电隔离和/或保护层在包括空气中的环境压力下沉积来简化制造过程。

公开(公告)号：WO2011044362A2

公开(公告)日：2011-04-14

申请号：PCT/US2010/051824

申请日：2010-10-07

Applicant: OVSHINSKY INNOVATION, LLC ,  OVSHINSKY, Stanford

Inventor： OVSHINSKY, Stanford

IPC: H01L31/042

CPC classification number: H01L31/03685 ,  H01L31/022466 ,  H01L31/035218 ,  H01L31/03762 ,  H01L31/046 ,  H01L31/056 ,  H01L31/1884 ,  H01L31/202 ,  Y02E10/52 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

Abstract: A photovoltaic device and method of forming a photovoltaic device. The photovoltaic device includes a fluorine-containing photovoltaic material and a transparent electrode. Inclusion of fluorine in the photovoltaic material increases its thermal stability. The effect is particularly pronounced in photovoltaic materials based on disordered forms of silicon, including amorphous, nanocrystalline, or microcrystalline silicon. The higher thermal stability permits deposition or annealing of the transparent electrode at high temperature. As a result, high conductivity is achieved for the transparent electrode without degrading the photovoltaic material. The higher conductivity of the transparent electrode facilitates series integration of individual devices to form a module. The method includes forming a photovoltaic material from a fluorinated precursor or treating a photovoltaic material in a fluorine-containing ambient.

Abstract translation: 光电器件及其形成方法。 光电器件包括含氟光伏材料和透明电极。 在光伏材料中包含氟增加其热稳定性。 在基于无序形式的硅（包括无定形，纳米晶体或微晶硅）的光伏材料中，效果特别明显。 较高的热稳定性允许透明电极在高温下进行沉积或退火。 结果，对于透明电极实现了高导电性而不降低光伏材料。 透明电极的较高的导电性有助于各个器件的串联集成以形成模块。 该方法包括从氟化前体形成光伏材料或处理含氟环境中的光伏材料。

公开(公告)号：WO2010117697A3

公开(公告)日：2011-01-13

申请号：PCT/US2010028985

申请日：2010-03-29

Applicant: OVSHINSKY INNOVATION LLC ,  STRAND DAVID ,  OVSHINSKY STANFORD

Inventor： STRAND DAVID ,  OVSHINSKY STANFORD

IPC: H01L31/042

CPC classification number: H01L31/056 ,  H01L31/0392 ,  H01L31/03923 ,  H01L31/03925 ,  H01L31/03926 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/048 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/541

Abstract: A method that includes forming a photovoltaic material on a substrate and removing the substrate. The method may include patterning the photovoltaic material to form a plurality of photovoltaic devices and configuring the devices in series to achieve monolithic integration. The method may include forming additional layers on the substrate, such as one or more of a protective material, a transparent conductor, a back conductor, an adhesive layer, and a laminate support layer. When the substrate is opaque, the method provides the option of ordering the layers so that a transparent conductor is formed before the back reflector of a photovoltaic stack. This ordering of layers facilitates monolithic integration and the ability to remove the substrate allows the earlier-formed transparent conductor to serve as the point of incidence for receiving the light that excites the photovoltaic material.

Abstract translation: 一种方法，其包括在基板上形成光伏材料并去除所述基板。 该方法可以包括图案化光伏材料以形成多个光伏器件并且串联配置器件以实现单片集成。 该方法可以包括在基底上形成附加层，例如保护材料，透明导体，背导体，粘合剂层和叠层支撑层中的一种或多种。 当基板是不透明的时，该方法提供排列层的选择，使得在光伏堆叠的后反射器之前形成透明导体。 层的这种顺序有助于单片整合，并且去除衬底的能力允许较早形成的透明导体用作接收激发光伏材料的光的入射点。

公开(公告)号：WO2010030729A2

公开(公告)日：2010-03-18

申请号：PCT/US2009/056445

申请日：2009-09-10

Applicant: OVSHINSKY INNOVATION, LLC ,  OVSHINSKY, Stanford

Inventor： OVSHINSKY, Stanford

IPC: H01L21/20 ,  H01L31/042

CPC classification number: H01L21/02532 ,  C23C16/452 ,  C23C16/545 ,  H01L21/0262 ,  H01L31/1804 ,  Y02E10/547

Abstract: A method and apparatus for the high rate deposition of thin film materials on a stationary or continuous substrate. The method includes delivery of a preselected precursor intermediate to a deposition chamber and formation of a thin film material from the intermediate. The intermediate is formed outside of the deposition chamber and includes a metastable species such as a free radical. The intermediate is preselected to include a metastable species conducive to the formation of a thin film material having a low defect concentration. By forming a low defect concentration material, deposition rate is decoupled from material quality and unprecedented deposition rates are achieved. In one embodiment, the preselected precursor intermediate is SiH 3. The method includes combining the preselected intermediate with a carrier gas, preferably in a deactivated state, where the carrier gas directs the transport of the preselected intermediate to a substrate for deposition of the thin film material.

Abstract translation: 一种用于在静止或连续衬底上高速沉积薄膜材料的方法和装置。 该方法包括将预选的前体中间体递送到沉积室并从中间体形成薄膜材料。 中间体形成在沉积室的外部，并且包括诸如自由基的亚稳态物质。 中间体被预选为包括有助于形成具有低缺陷浓度的薄膜材料的亚稳态物质。 通过形成低缺陷浓度材料，沉积速率与材料质量分离，并实现了前所未有的沉积速率。 在一个实施方案中，预选的前体中间体是SiH 3。 该方法包括将预选的中间体与载气组合，优选处于去活化状态，其中载气将预选中间体输送到基底以沉积薄膜材料。

公开(公告)号：WO2012092051A3

公开(公告)日：2013-01-03

申请号：PCT/US2011066374

申请日：2011-12-21

Applicant: OVSHINSKY INNOVATION LLC ,  OVSHINSKY STANFORD

Inventor： OVSHINSKY STANFORD

IPC: H01L31/042 ,  H01L31/18

CPC classification number: H01L31/03762 ,  H01L31/03921 ,  H01L31/076 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

Abstract: A photovoltaic device structure includes a primer layer to shield the substrate and underlying layers during deposition in an aggressive, highly reactive environment. The primer layer prevents or inhibits etching or other modification of the substrate or underlying layers by highly reactive deposition conditions. The primer layer also reduces contamination of subsequent layers of the device structure by preventing or inhibiting release of elements from the substrate or underlying layers into the deposition environment. The presence of the primer layer extends the range of deposition conditions available for forming photovoltaic or semiconducting materials without compromising performance. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors from fluorinated precursors in a microwave plasma process. The product materials exhibit high carrier mobility, high photovoltaic conversion efficiency, low porosity, little or no Staebler-Wronski degradation, and low concentrations of electronic and chemical defects.

Abstract translation: 光伏器件结构包括底漆层，以在沉积期间在侵蚀性，高度反应性的环境中屏蔽衬底和下层。 底漆层通过高反应性沉积条件防止或抑制基材或下层的蚀刻或其它改性。 底漆层还通过防止或阻止元件从基底或下层进入沉积环境而减少器件结构的后续层的污染。 底漆层的存在延长了可用于形成光伏或半导体材料的沉积条件的范围，而不损害性能。 本发明允许在微波等离子体工艺中从氟化前体超快形成含硅非晶半导体。 产品材料表现出高载流子迁移率，高光电转换效率，低孔隙率，很少或没有Staebler-Wronski降解，以及低浓度的电子和化学缺陷。

公开(公告)号：WO2012021325A2

公开(公告)日：2012-02-16

申请号：PCT/US2011/046179

申请日：2011-08-02

Applicant: OVSHINSKY INNOVATION, LLC ,  OVSHINSKY, Stanford ,  STRAND, David ,  KLERSY, Patrick ,  PASHMAKOV, Boil

Inventor： OVSHINSKY, Stanford ,  STRAND, David ,  KLERSY, Patrick ,  PASHMAKOV, Boil

IPC: H01L31/18 ,  H01L31/042 ,  C23C16/50

CPC classification number: C23C16/545 ,  C23C16/24 ,  C23C16/4401 ,  C23C16/452 ,  C23C16/511 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/03767 ,  H01L31/1804 ,  H01L31/202 ,  Y02E10/547 ,  Y02P70/521

Abstract: Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids unintended deposition on microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to energize them to a reactive state conducive to formation of a thin film. The conduits physically isolate deposition species that would react or otherwise combine to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent premature thin film deposition. Suitable precursors include those that contain silicon, germanium, fluorine, and/or hydrogen. The invention enables formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little Staebler-Wronski degradation, and low defect concentration.

Abstract translation: 在微波频率下等离子体沉积薄膜光伏材料的装置和方法。 该设备避免了将微波能量耦合到沉积物质的微波传输元件上的意外沉积。 该设备包括具有穿过其中的导管的携带沉积物种的微波施加器。 施用器将微波能量传递至沉积物质以将其激发至有助于形成薄膜的反应性状态。 导管物理隔离将在微波功率传输点处反应或以其他方式组合以形成薄膜材料的沉积物质。 沉积物种分别通电并从功率传输点扫除以防止过早的薄膜沉积。 合适的前体包括含有硅，锗，氟和/或氢的那些。 本发明能够形成具有高迁移率，低孔隙率，Staebler-Wronski降解少，以及低缺陷浓度的含硅非晶半导体。

公开(公告)号：WO2011044359A2

公开(公告)日：2011-04-14

申请号：PCT/US2010/051818

申请日：2010-10-07

Applicant: OVSHINSKY INNOVATION, LLC ,  OVSHINSKY, Stanford

Inventor： OVSHINSKY, Stanford

IPC: H01L31/18 ,  H01L31/042 ,  H01L21/20

CPC classification number: C23C16/452 ,  C23C16/54 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32752 ,  H01J37/32761 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/18

Abstract: A continuous thin film deposition apparatus that includes a remote plasma source. The source forms a plasma from a precursor and delivers a modified form of the plasma as a charge-depleted deposition medium to a deposition apparatus for formation of a thin film material. The thin film may be formed on a continuous web or other moving substrate. The charge-depleted deposition medium may be formed within the remote plasma source and delivered to an operatively coupled deposition apparatus or the charge-depleted deposition medium may form as the plasma exits the remote plasma source. The initial plasma is formed within the remote plasma source and includes a distribution of charged species (electrons and ions). The charge-depleted deposition medium contains a reduced concentration of the charged species and permits deposition of thin film materials having lower defect concentration. The thin film material may be a solar material.

Abstract translation: 一种包括远程等离子体源的连续薄膜沉积设备。 源形成来自前体的等离子体，并将等离子体的修饰形式作为电荷耗尽的沉积介质递送到用于形成薄膜材料的沉积设备。 薄膜可以形成在连续的幅材或其它移动的基底上。 电荷耗尽的沉积介质可以形成在远程等离子体源内并且被输送到可操作耦合的沉积设备，或者当等离子体离开远程等离子体源时可形成耗尽电荷的沉积介质。 初始等离子体形成在远程等离子体源内，并且包括带电物质（电子和离子）的分布。 电荷耗尽的沉积介质含有降低的带电量的浓度，并允许沉积具有较低缺陷浓度的薄膜材料。 薄膜材料可以是太阳能材料。