公开(公告)号：WO2005028701A3

公开(公告)日：2005-06-30

申请号：PCT/US2004004943

申请日：2004-02-19

Applicant: CREE INC ,  SUMAKERIS JOSEPH JOHN ,  PAISLEY MICHAEL JAMES ,  O'LOUGHLIN MICHAEL JOHN

Inventor： SUMAKERIS JOSEPH JOHN ,  PAISLEY MICHAEL JAMES ,  O'LOUGHLIN MICHAEL JOHN

IPC: C23C16/44 ,  C23C16/455

CPC classification number: C23C16/45519 ,  C23C16/4401 ,  C23C16/455 ,  C23C16/488

Abstract: Parasitic deposits are controlled in a deposition system (100) for depositing a film on a substrate (20), the deposition system of the type defining a reaction chamber for receiving the substrate and including a process gas (P) in the reaction chamber and an interior surface contiguous with the reaction chamber. Such control is provided by flowing a buffer gas (B) between the interior surface and at least a portion of the process gas to form a gas barrier layer such that the gas barrier layer inhibits contact between the interior surface and components of the process gas.

Abstract translation: 在沉积系统（100）中控制寄生沉积物，用于在衬底（20）上沉积膜，所述沉积系统的类型限定用于接收衬底的反应室，并且在反应室中包括处理气体（P）和 与反应室邻接的内表面。 通过使缓冲气体（B）在内表面和至少一部分处理气体之间流动以形成气体阻隔层，使得气体阻挡层抑制内表面和处理气体的组分之间的接触来提供这种控制。

公开(公告)号：WO2003038876A1

公开(公告)日：2003-05-08

申请号：PCT/US2002/030230

申请日：2002-09-24

Applicant: CREE INC. ,  SUMAKERIS, Joseph, J. ,  SINGH, Ranbir ,  PAISLEY, Michael, James ,  MUELLER, Stephan, Georg ,  HOBGOOD, Hudson, M. ,  CARTER, Calvin, H., Jr. ,  BURK, Albert, Augustus, Jr.

Inventor： SUMAKERIS, Joseph, J. ,  SINGH, Ranbir ,  PAISLEY, Michael, James ,  MUELLER, Stephan, Georg ,  HOBGOOD, Hudson, M. ,  CARTER, Calvin, H., Jr. ,  BURK, Albert, Augustus, Jr.

IPC: H01L21/04

CPC classification number: H01L29/1608 ,  C30B19/00 ,  C30B23/002 ,  C30B25/02 ,  C30B29/36 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/732 ,  H01L29/744 ,  H01L29/861

Abstract: A bipolar device (30) has at least one p-type layer (34) of single crystal silicon carbide and at least one n-type layer (33) of single crystal silicon carbide, wherein those portions of those stacking faults (40) that grow under forward operation are segregated from at least one of the interfaces between the active region and the remainder of the device.

Abstract translation: 双极器件（30）具有单晶碳化硅的至少一个p型层（34）和单晶碳化硅的至少一个n型层（33），其中那些堆垛层错的那些部分（40）， 在正向操作下生长与活动区域和设备的其余部分之间的至少一个界面分离。

公开(公告)号：WO2005041305A1

公开(公告)日：2005-05-06

申请号：PCT/US2004/031883

申请日：2004-09-29

Applicant: CREE, INC. ,  SUMAKERIS, Joseph, John ,  HOBGOOD, Hudson, McDonald ,  PAISLEY, Michael, James ,  JENNY, Jason, Ronald ,  CARTER, JR., Calvin, H. ,  TSVETKOV, Valeri, Fedorovich

Inventor： SUMAKERIS, Joseph, John ,  HOBGOOD, Hudson, McDonald ,  PAISLEY, Michael, James ,  JENNY, Jason, Ronald ,  CARTER, JR., Calvin, H. ,  TSVETKOV, Valeri, Fedorovich

IPC: H01L29/24

CPC classification number: H01L29/7813 ,  C30B29/36 ,  C30B31/20 ,  H01L21/0455 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/8083 ,  H01L29/861 ,  H01L29/868

Abstract: Methods of forming high voltage silicon carbide power devices utilize high purity silicon carbide drift layers that are derived from high purity silicon carbide wafer material, instead of prohibitively costly epitaxially grown silicon carbide layers. The methods include forming both minority carrier and majority carrier power devices that can support greater than 10kV blocking voltages, using drift layers having thicknesses greater than about 100um. The drift layers are formed as boule-grown silicon carbide drift layers having a net n-type dopant concentration therein that is less than about 2x10 15 cm -3 . These n-type dopant concentrations can be achieved using neutron transmutation doping (NTD) techniques.

Abstract translation: 形成高压碳化硅功率器件的方法利用从高纯度碳化硅晶片材料得到的高纯度碳化硅漂移层，而不是昂贵的外延生长碳化硅层。 这些方法包括使用厚度大于约100um的漂移层来形成能够支持大于10kV阻断电压的少数载流子和多数载流子功率器件。 漂移层形成为其中具有小于约2×10 15 cm -3的净n型掺杂剂浓度的双晶生长碳化硅漂移层。 这些n型掺杂剂浓度可以使用中子转换掺杂（NTD）技术来实现。

公开(公告)号：WO2003088325A1

公开(公告)日：2003-10-23

申请号：PCT/US2003/003196

申请日：2003-02-04

Applicant: CREE, INC. ,  PAISLEY, Michael, James ,  SUMAKERIS, Joseph, John

Inventor： PAISLEY, Michael, James ,  SUMAKERIS, Joseph, John

IPC: H01L21/00

CPC classification number: C30B25/12 ,  C23C16/4584 ,  H01L21/6838

Abstract: A gas driven rotation apparatus for use with a flow of drive gas includes a base member having an upper surface, a main platter overlying the upper surface of the base member, and a satellite platter overlying the main platter. The apparatus is adapted to direct the flow of drive gas between the upper surface of the base member and the main platter such that the main platter is rotated relative to the base member by the flow of drive gas. At least a portion of the flow of drive gas is directed from between the upper surface of the base member and the main platter to between the main platter and the satellite platter such that the satellite platter is rotated relative to the main platter by the at least a portion of the flow of drive gas.

Abstract translation: 与驱动气体流动一起使用的气体驱动旋转装置包括具有上表面的基部构件，覆盖在基座构件的上表面上的主盘，以及覆盖在主盘上的卫星盘。 该装置适于引导驱动气体在基体的上表面与主盘之间的流动，使得主盘片通过驱动气体的流动相对于基座构件旋转。 驱动气体流的至少一部分从基部构件的上表面和主盘之间引导到主盘和卫星盘之间，使得卫星盘相对于主盘旋转至少 驱动气体流的一部分。

公开(公告)号：WO2003039195A2

公开(公告)日：2003-05-08

申请号：PCT/US2002/034090

申请日：2002-10-24

Applicant: CREE, INC. ,  SUMAKERIS, Joseph, John ,  PAISLEY, Michael, James

Inventor： SUMAKERIS, Joseph, John ,  PAISLEY, Michael, James

IPC: H05B6/00

CPC classification number: H05B6/108 ,  C23C16/4581 ,  C23C16/46 ,  C30B25/10

Abstract: A heating device for controllably heating an article defines a processing chamber to hold the article and includes a housing and an EMF generator. The housing includes a susceptor portion surrounding at least a portion of the processing chamber, and a conductor portion interposed between the susceptor portion and the processing chamber. The EMF generator is operable to induce eddy currents within the susceptor portion such that substantially no eddy currents are induced in the conductor portion. The conductor portion is operative to conduct heat from the susceptor portion to the processing chamber. The heating device may further include a platter and an opening defined in the conductor portion, wherein the opening is interposed between the susceptor portion and the platter.

Abstract translation: 用于可控制地加热制品的加热装置限定处理室以保持物品并且包括壳体和EMF发生器。 壳体包括围绕处理室的至少一部分的基座部分和插入在基座部分和处理室之间的导体部分。 EMF发生器可操作以在基座部分内感应涡流，使得在导体部分中基本上没有感应到涡流。 导体部分可操作以将热量从基座部分传导到处理室。 加热装置还可以包括盘片和限定在导体部分中的开口，其中开口插入在基座部分和盘片之间。

公开(公告)号：WO2003039195A3

公开(公告)日：2003-05-08

申请号：PCT/US2002/034090

申请日：2002-10-24

Applicant: CREE, INC. ,  SUMAKERIS, Joseph, John ,  PAISLEY, Michael, James

Inventor： SUMAKERIS, Joseph, John ,  PAISLEY, Michael, James

IPC: H05B6/02

Abstract: A heating device for controllably heating an article defines a processing chamber to hold the article and includes a housing and an EMF generator. The housing includes a susceptor portion surrounding at least a portion of the processing chamber, and a conductor portion interposed between the susceptor portion and the processing chamber. The EMF generator is operable to induce eddy currents within the susceptor portion such that substantially no eddy currents are induced in the conductor portion. The conductor portion is operative to conduct heat from the susceptor portion to the processing chamber. The heating device may further include a platter and an opening defined in the conductor portion, wherein the opening is interposed between the susceptor portion and the platter.

公开(公告)号：WO2005028701A2

公开(公告)日：2005-03-31

申请号：PCT/US2004/004943

申请日：2004-02-19

Applicant: CREE, INC. ,  SUMAKERIS, Joseph, John ,  PAISLEY, Michael, James ,  O'LOUGHLIN, Michael, John

Inventor： SUMAKERIS, Joseph, John ,  PAISLEY, Michael, James ,  O'LOUGHLIN, Michael, John

IPC: C23C16/44

CPC classification number: C23C16/45519 ,  C23C16/4401 ,  C23C16/455 ,  C23C16/488

Abstract: Parasitic deposits are controlled in a deposition system for depositing a film on a substrate, the deposition system of the type defining a reaction chamber for receiving the substrate and including a process gas in the reaction chamber and an interior surface contiguous with the reaction chamber. Such control is provided by flowing a buffer gas between the interior surface and at least a portion of the process gas to form a gas barrier layer such that the gas barrier layer inhibits contact between the interior surface and components of the process gas. A deposition system for depositing a film on a substrate using a process gas includes a reaction chamber adapted to receive the substrate and the process gas. The system further includes an interior surface contiguous with the reaction chamber. A buffer gas supply system is adapted to supply a flow of a buffer gas between the interior surface and at least a portion of the process gas such that the flow of the buffer gas forms a gas barrier layer to inhibit contact between the interior surface and components of the process gas when the process gas is disposed in the reaction chamber.

Abstract translation: 寄生沉积物被控制在用于在基底上沉积膜的沉积系统中，这种类型的沉积系统限定用于接收基底的反应室，并且在反应室中包括处理气体和与反应室邻接的内表面。 通过在内表面和至少一部分处理气体之间流动缓冲气体以形成阻气层来提供这种控制，使得气体阻隔层抑制处理气体的内表面和组分之间的接触。 用于使用工艺气体在衬底上沉积膜的沉积系统包括适于接收衬底和工艺气体的反应室。 该系统还包括与反应室邻接的内表面。 缓冲气体供应系统适于在内表面和处理气体的至少一部分之间提供缓冲气体流，使得缓冲气体的流动形成阻气层，以阻止内表面和部件之间的接触 当处理气体设置在反应室中时，该工艺气体。