公开(公告)号：WO2006124174A3

公开(公告)日：2007-04-05

申请号：PCT/US2006014376

申请日：2006-04-18

Applicant: CREE INC ,  RYU SEI-HYUNG ,  JENNY JASON R ,  DAS MRINAL K ,  HOBGOOD HUDSON MCDONALD ,  AGARWAL ANANT K ,  PALMOUR JOHN W

Inventor： RYU SEI-HYUNG ,  JENNY JASON R ,  DAS MRINAL K ,  HOBGOOD HUDSON MCDONALD ,  AGARWAL ANANT K ,  PALMOUR JOHN W

IPC: H01L29/739 ,  H01L21/04 ,  H01L29/06 ,  H01L29/24

CPC classification number: H01L29/7395 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/66333

Abstract: Silicon carbide high voltage semiconductor devices and methods of fabricating such devices are provided. The devices include a voltage blocking substrate. Insulated gate bipolar transistors are provided that have a voltage blocking substrate. Planar and beveled edge termination may be provided.

Abstract translation: 提供了碳化硅高压半导体器件及其制造方法。 这些器件包括电压阻挡衬底。 提供具有电压阻挡衬底的绝缘栅双极晶体管。 可以提供平面和斜边缘终止。

公开(公告)号：WO2005012601A3

公开(公告)日：2005-03-24

申请号：PCT/US2004023859

申请日：2004-07-26

Applicant: CREE INC ,  FECHKO GEORGE JOHN JR ,  JENNY JASON RONALD ,  HOBGOOD HUDSON MCDONALD ,  TSVETKOV VALERI F ,  CARTER CARTER H JR

Inventor： FECHKO GEORGE JOHN JR ,  JENNY JASON RONALD ,  HOBGOOD HUDSON MCDONALD ,  TSVETKOV VALERI F ,  CARTER CARTER H JR

IPC: C30B23/00 ,  C30B29/36

CPC classification number: C30B23/005 ,  C30B23/002 ,  C30B29/36 ,  Y10S117/906

Abstract: The invention herein relates to controlling the nitrogen content in silicon carbide crystals and in particular relates to reducing the incorporation of nitrogen during sublimation growth of silicon carbide. The invention controls nitrogen concentration in a growing silicon carbide crystal by providing all ambient atmosphere of hydrogen in the growth chamber. The hydrogen atoms, in effect, block, reduce, or otherwise hinder the incorporation of nitrogen atoms at the surface of the growing crystal.

Abstract translation: 本发明涉及控制碳化硅晶体中的氮含量，特别涉及在碳化硅升华生长期间降低氮的掺入。 本发明通过在生长室中提供氢气的所有环境气氛来控制生长中的碳化硅晶体中的氮浓度。 实际上，氢原子阻断，降低或以其他方式妨碍氮原子在生长晶体的表面的引入。

公开(公告)号：WO2006124183A3

公开(公告)日：2007-05-18

申请号：PCT/US2006014673

申请日：2006-04-19

Applicant: CREE INC ,  RYU SEI-HYUNG ,  JENNY JASON R ,  DAS MRINAL K ,  HOBGOOD HUDSON MCDONALD ,  AGARWAL ANANT K ,  PALMOUR JOHN W

Inventor： RYU SEI-HYUNG ,  JENNY JASON R ,  DAS MRINAL K ,  HOBGOOD HUDSON MCDONALD ,  AGARWAL ANANT K ,  PALMOUR JOHN W

IPC: H01L29/87 ,  H01L21/04 ,  H01L29/06 ,  H01L29/24 ,  H01L29/74

CPC classification number: H01L29/66068 ,  H01L29/0661 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/747 ,  H01L29/87 ,  H01L2924/10156

Abstract: High voltage silicon carbide (SiC) devices, for example, thyristors, are provided. A first SiC layer having a first conductivity type is provided on a first surface of a voltage blocking SiC substrate having a second conductivity type. A first region of SiC is provided on the first SiC layer and has the second conductivity type. A second region of SiC is provided in the first SiC layer, has the first conductivity type and is adjacent to the first region of SiC. A second SiC layer having the first conductivity type is provided on a second surface of the voltage blocking SiC substrate. A third region of SiC is provided on the second SiC layer and has the second conductivity type. A fourth region of SiC is provided in the second SiC layer, has the first conductivity type and is adjacent to the third region of SiC. First and second contacts are provided on the first and third regions of SiC, respectively. Related methods of fabricating high voltage SiC devices are also provided.

Abstract translation: 提供高压碳化硅（SiC）器件，例如晶闸管。 具有第一导电类型的第一SiC层设置在具有第二导电类型的压电SiC衬底的第一表面上。 SiC的第一区域设置在第一SiC层上并具有第二导电类型。 SiC的第二区域设置在第一SiC层中，具有第一导电类型并且与SiC的第一区域相邻。 具有第一导电类型的第二SiC层设置在压电SiC衬底的第二表面上。 SiC的第三区域设置在第二SiC层上并具有第二导电类型。 SiC的第四区域设置在第二SiC层中，具有第一导电类型并且与SiC的第三区域相邻。 第一和第二触点分别设置在SiC的第一和第三区域上。 还提供了制造高电压SiC器件的相关方法。

公开(公告)号：WO2006124174A2

公开(公告)日：2006-11-23

申请号：PCT/US2006/014376

申请日：2006-04-18

Applicant: CREE, INC. ,  RYU, Sei-Hyung ,  JENNY, Jason R. ,  DAS, Mrinal K. ,  HOBGOOD, Hudson McDonald ,  AGARWAL, Anant K. ,  PALMOUR, John W.

Inventor： RYU, Sei-Hyung ,  JENNY, Jason R. ,  DAS, Mrinal K. ,  HOBGOOD, Hudson McDonald ,  AGARWAL, Anant K. ,  PALMOUR, John W.

IPC: H01L29/739 ,  H01L29/06 ,  H01L29/24 ,  H01L21/04

CPC classification number: H01L29/7395 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/66333

Abstract: Silicon carbide high voltage semiconductor devices and methods of fabricating such devices are provided. The devices include a voltage blocking substrate. Insulated gate bipolar transistors are provided that have a voltage blocking substrate. Planar and beveled edge termination may be provided.

Abstract translation: 提供了碳化硅高压半导体器件及其制造方法。 这些器件包括电压阻挡衬底。 提供具有电压阻挡衬底的绝缘栅双极晶体管。 可以提供平面和斜边缘终止。

公开(公告)号：WO2006124107A1

公开(公告)日：2006-11-23

申请号：PCT/US2006/009256

申请日：2006-03-15

Applicant: CREE, INC. ,  RYU, Sei-Hyung ,  JENNY, Jason R. ,  DAS, Mrinal K. ,  HOBGOOD, Hudson McDonald ,  AGARWAL, Anant K. ,  PALMOUR, John W.

Inventor： RYU, Sei-Hyung ,  JENNY, Jason R. ,  DAS, Mrinal K. ,  HOBGOOD, Hudson McDonald ,  AGARWAL, Anant K. ,  PALMOUR, John W.

IPC: H01L29/74 ,  H01L29/06

CPC classification number: H01L29/74 ,  H01L29/0661 ,  H01L29/1608

Abstract: High voltage silicon carbide (SiC) devices, for example, thyristors, are provided. A first SiC layer having a first conductivity type is provided on a first surface of a voltage blocking SiC substrate having a second conductivity type. A first region of SiC is provided on the first SiC layer and has the second conductivity type. A second region of SiC is provided in the first SiC layer. The second region of SiC has the first conductivity type and is adjacent to the first region of SiC. A second SiC layer having the first conductivity type is provided on a second surface, opposite the first surface, of the voltage blocking SiC substrate. First, second and third contacts are provided on the first region of SiC, the second region of SiC and the second SiC layer, respectively. Related methods of fabricating high voltage SiC devices are also provided.

Abstract translation: 提供高压碳化硅（SiC）器件，例如晶闸管。 具有第一导电类型的第一SiC层设置在具有第二导电类型的压电SiC衬底的第一表面上。 SiC的第一区域设置在第一SiC层上并具有第二导电类型。 SiC的第二区域设置在第一SiC层中。 SiC的第二区域具有第一导电类型并且与SiC的第一区域相邻。 具有第一导电类型的第二SiC层设置在压电SiC衬底的与第一表面相对的第二表面上。 首先，分别在SiC的第一区域，SiC的第二区域和第二SiC层上设置第二和第三触点。 还提供了制造高电压SiC器件的相关方法。

公开(公告)号：WO2005012601A2

公开(公告)日：2005-02-10

申请号：PCT/US2004/023859

申请日：2004-07-26

Applicant: CREE, INC. ,  FECHKO, George, John, Jr. ,  JENNY, Jason, Ronald ,  HOBGOOD, Hudson, McDonald ,  TSVETKOV, Valeri, F. ,  CARTER, Carter, H., Jr.

Inventor： FECHKO, George, John, Jr. ,  JENNY, Jason, Ronald ,  HOBGOOD, Hudson, McDonald ,  TSVETKOV, Valeri, F. ,  CARTER, Carter, H., Jr.

IPC: C30B

CPC classification number: C30B23/005 ,  C30B23/002 ,  C30B29/36 ,  Y10S117/906

Abstract: The invention herein relates to controlling the nitrogen content in silicon carbide crystals and in particular relates to reducing the incorporation of nitrogen during sublimation growth of silicon carbide. The invention controls nitrogen concentration in a growing silicon carbide crystal by providing all ambient atmosphere of hydrogen in the growth chamber. The hydrogen atoms, in effect, block, reduce, or otherwise hinder the incorporation of nitrogen atoms at the surface of the growing crystal.

Abstract translation: 本文的发明涉及控制碳化硅晶体中的氮含量，并且具体涉及在碳化硅的升华生长期间减少氮的掺入。 本发明通过在生长室中提供氢的所有环境气氛来控制生长的碳化硅晶体中的氮浓度。 氢原子实际上阻断，减少或以其他方式阻碍氮原子在生长晶体表面的结合。

公开(公告)号：WO2006071326A1

公开(公告)日：2006-07-06

申请号：PCT/US2005/036226

申请日：2005-10-07

Applicant: CREE, INC. ,  CARTER, Calvin, H., Jr. ,  JENNY, Jason, Ronald ,  MALTA, David, Philip ,  HOBGOOD, Hudson, McDonald ,  TSVETKOV, Valeri, F. ,  DAS, Mrinal, K.

Inventor： CARTER, Calvin, H., Jr. ,  JENNY, Jason, Ronald ,  MALTA, David, Philip ,  HOBGOOD, Hudson, McDonald ,  TSVETKOV, Valeri, F. ,  DAS, Mrinal, K.

IPC: C30B29/36 ,  C30B33/02

CPC classification number: C30B29/36 ,  C30B33/02

Abstract: A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration.

Abstract translation: 描述了一种制备具有增加的少数载流子寿命的碳化硅晶体的方法。 该方法包括以下步骤：加热并缓慢冷却具有第一浓度的少数载流子复合中心的碳化硅晶体，使得所得到的少数载流子复合中心的浓度低于第一浓度。

公开(公告)号：WO2005041305A1

公开(公告)日：2005-05-06

申请号：PCT/US2004/031883

申请日：2004-09-29

Applicant: CREE, INC. ,  SUMAKERIS, Joseph, John ,  HOBGOOD, Hudson, McDonald ,  PAISLEY, Michael, James ,  JENNY, Jason, Ronald ,  CARTER, JR., Calvin, H. ,  TSVETKOV, Valeri, Fedorovich

Inventor： SUMAKERIS, Joseph, John ,  HOBGOOD, Hudson, McDonald ,  PAISLEY, Michael, James ,  JENNY, Jason, Ronald ,  CARTER, JR., Calvin, H. ,  TSVETKOV, Valeri, Fedorovich

IPC: H01L29/24

CPC classification number: H01L29/7813 ,  C30B29/36 ,  C30B31/20 ,  H01L21/0455 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/8083 ,  H01L29/861 ,  H01L29/868

Abstract: Methods of forming high voltage silicon carbide power devices utilize high purity silicon carbide drift layers that are derived from high purity silicon carbide wafer material, instead of prohibitively costly epitaxially grown silicon carbide layers. The methods include forming both minority carrier and majority carrier power devices that can support greater than 10kV blocking voltages, using drift layers having thicknesses greater than about 100um. The drift layers are formed as boule-grown silicon carbide drift layers having a net n-type dopant concentration therein that is less than about 2x10 15 cm -3 . These n-type dopant concentrations can be achieved using neutron transmutation doping (NTD) techniques.

Abstract translation: 形成高压碳化硅功率器件的方法利用从高纯度碳化硅晶片材料得到的高纯度碳化硅漂移层，而不是昂贵的外延生长碳化硅层。 这些方法包括使用厚度大于约100um的漂移层来形成能够支持大于10kV阻断电压的少数载流子和多数载流子功率器件。 漂移层形成为其中具有小于约2×10 15 cm -3的净n型掺杂剂浓度的双晶生长碳化硅漂移层。 这些n型掺杂剂浓度可以使用中子转换掺杂（NTD）技术来实现。

公开(公告)号：WO2004001836A1

公开(公告)日：2003-12-31

申请号：PCT/US2003/018068

申请日：2003-06-10

Applicant: CREE, INC. ,  JENNY, Jason, Ronald ,  MALTA, David, Phillip ,  HOBGOOD, Hudson, McDonald ,  MUELLER, Stephan, Georg

Inventor： JENNY, Jason, Ronald ,  MALTA, David, Phillip ,  HOBGOOD, Hudson, McDonald ,  MUELLER, Stephan, Georg

IPC: H01L21/324

CPC classification number: H01L21/324 ,  C30B29/36 ,  C30B33/00

Abstract: A method is disclosed for producing high quality semi-insulating silicon carbide crystals in the absence of relevant amounts of deep level trapping elements. The invention includes the steps of heating a silicon carbide crystal having a first concentration of point defect related deep level states to a temperature above the temperatures required for CVD growth of silicon carbide from source gases, but less than the sublimation temperature of silicon carbide under the ambient conditions to thereby thermodynamically increase the number of point defects and resulting states in the crystal, and then cooling the heated crystal to approach room temperature at a sufficiently rapid rate to maintain a concentration of point defects in the cooled crystal that remains greater than the first concentration.

Abstract translation: 公开了一种在没有相关量的深层捕获元件的情况下生产高质量半绝缘碳化硅晶体的方法。 本发明包括以下步骤：将具有与点缺陷有关的深层次状态的第一浓度的碳化硅晶体加热到高于来自源气体的碳化硅的CVD生长所需温度的温度，但小于碳化硅的升华温度 从而热力学地增加晶体中的点缺陷数量和结果状态，然后以足够快的速率将加热的晶体冷却至接近室温，以保持冷却的晶体中的点缺陷的浓度保持大于第一 浓度。

公开(公告)号：WO2006124183A2

公开(公告)日：2006-11-23

申请号：PCT/US2006/014673

申请日：2006-04-19

Applicant: CREE, INC. ,  RYU, Sei-Hyung ,  JENNY, Jason, R. ,  DAS, Mrinal, K. ,  HOBGOOD, Hudson, McDonald ,  AGARWAL, Anant, K. ,  PALMOUR, John, W.

Inventor： RYU, Sei-Hyung ,  JENNY, Jason, R. ,  DAS, Mrinal, K. ,  HOBGOOD, Hudson, McDonald ,  AGARWAL, Anant, K. ,  PALMOUR, John, W.

IPC: H01L29/87 ,  H01L29/74 ,  H01L29/739 ,  H01L29/06 ,  H01L29/24 ,  H01L21/04

CPC classification number: H01L29/66068 ,  H01L29/0661 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/747 ,  H01L29/87 ,  H01L2924/10156

Abstract: High voltage silicon carbide (SiC) devices, for example, thyristors, are provided. A first SiC layer having a first conductivity type is provided on a first surface of a voltage blocking SiC substrate having a second conductivity type. A first region of SiC is provided on the first SiC layer and has the second conductivity type. A second region of SiC is provided in the first SiC layer, has the first conductivity type and is adjacent to the first region of SiC. A second SiC layer having the first conductivity type is provided on a second surface of the voltage blocking SiC substrate. A third region of SiC is provided on the second SiC layer and has the second conductivity type. A fourth region of SiC is provided in the second SiC layer, has the first conductivity type and is adjacent to the third region of SiC. First and second contacts are provided on the first and third regions of SiC, respectively. Related methods of fabricating high voltage SiC devices are also provided.

Abstract translation: 提供高压碳化硅（SiC）器件，例如晶闸管。 具有第一导电类型的第一SiC层设置在具有第二导电类型的压电SiC衬底的第一表面上。 SiC的第一区域设置在第一SiC层上并具有第二导电类型。 SiC的第二区域设置在第一SiC层中，具有第一导电类型并且与SiC的第一区域相邻。 具有第一导电类型的第二SiC层设置在压电SiC衬底的第二表面上。 SiC的第三区域设置在第二SiC层上并具有第二导电类型。 SiC的第四区域设置在第二SiC层中，具有第一导电类型并且与SiC的第三区域相邻。 第一和第二触点分别设置在SiC的第一和第三区域上。 还提供了制造高电压SiC器件的相关方法。