公开(公告)号：WO2010132666A1

公开(公告)日：2010-11-18

申请号：PCT/US2010/034714

申请日：2010-05-13

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  AMINI, Lisa ,  ANDRADE, Henrique ,  GEDIK, Bugra ,  HALIM, Nagui ,  PARTHASARATHY, Srinivasan

Inventor： AMINI, Lisa ,  ANDRADE, Henrique ,  GEDIK, Bugra ,  HALIM, Nagui ,  PARTHASARATHY, Srinivasan

IPC: G06F13/00

CPC classification number: G06F9/544

Abstract: Techniques for dynamically modifying inter-connections between components in an application are provided. The techniques include receiving a data producer profile for each output port within a software application to be executed on one or more processors, receiving a data subscription profile for each input port of each component of the application, establishing connections between the output ports and the input ports of the components in the application based on a comparison of each data producer profile and each data subscription profile, executing the application on one or more processors to process streams of data, receiving either or both of a new data producer profile or a new data subscription profile during the execution of the application, and establishing at least one new connection between an output port and an input port based upon a revised comparison of the received data profiles that include the new data profile.

Abstract translation: 提供了用于动态修改应用程序中组件之间的连接的技术。 这些技术包括：接收用于在一个或多个处理器上执行的软件应用中的每个输出端口的数据生成器简档，为应用的每个组件的每个输入端口接收数据订阅简档，在输出端口和输入端之间建立连接 基于每个数据生成器简档和每个数据订阅简档的比较来应用中的组件的端口，在一个或多个处理器上执行应用程序来处理数据流，接收新的数据生成器简档或新数据中的一个或两个 在执行应用期间的订阅简档，以及基于对包括新数据简档的所接收的数据简档进行修改的比较，在输出端口和输入端口之间建立至少一个新的连接。

公开(公告)号：WO2008144007A1

公开(公告)日：2008-11-27

申请号：PCT/US2008/006339

申请日：2008-05-16

Applicant: ADVANCED MICRO DEVICES, INC. ,  TOSAYA, Eric ,  PARTHASARATHY, Srinivasan

Inventor： TOSAYA, Eric ,  PARTHASARATHY, Srinivasan

IPC: H01L21/48 ,  H01L23/498

CPC classification number: H01L23/49811 ,  H01L21/4853 ,  H01L2224/16225 ,  H01L2224/73253 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15312 ,  H01L2924/16152 ,  H01L2924/3511 ,  Y10T29/53243 ,  H01L2224/0401

Abstract: Various methods and apparatus for semiconductor packing are disclosed. In one aspect, a method of manufacturing is provided that includes coupling first ends (237a) of plural conductor pins (183a, 183b, 183c) to a first surface (175) of a semiconductor chip package substrate (105). A layer (170) is formed on the first surface (175) that engages and resists lateral movement of the conductor pins (183a, 183b, 183c) while leaving second ends (237b) of the conductor pins (183a, 183b, 183c) exposed.

Abstract translation: 公开了用于半导体封装的各种方法和装置。 一方面，提供一种制造方法，其包括将多个导体引线（183a，183b，183c）的第一端（237a）耦合到半导体芯片封装基板（105）的第一表面（175）。 在导体销（183a，183b，183c）的第二端（237b）暴露的同时，在第一表面（175）上形成有接合并抵抗导体销（183a，183b，183c）的横向移动的层（170） 。

公开(公告)号：WO2007001598A3

公开(公告)日：2007-03-15

申请号：PCT/US2006014625

申请日：2006-04-19

Applicant: ADVANCED MICRO DEVICES INC ,  MASTER RAJ N ,  ANNAD SRINIVASAN ASHOK ,  PARTHASARATHY SRINIVASAN ,  MUI YEW CHEONG

Inventor： MASTER RAJ N ,  ANNAD SRINIVASAN ASHOK ,  PARTHASARATHY SRINIVASAN ,  MUI YEW CHEONG

IPC: H01L21/60 ,  B23K35/26 ,  C22C13/00 ,  H01L23/498

CPC classification number: C22C13/02 ,  B23K35/262 ,  H01L23/49811 ,  H01L24/81 ,  H01L24/97 ,  H01L2224/16225 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15312 ,  H01L2924/19105 ,  H05K3/3463 ,  H05K2201/10318 ,  H05K2201/10674 ,  H05K2203/047 ,  H01L2224/81 ,  H01L2224/0401

Abstract: A package substrate (4) includes die solder pads (3) and pin solder fillets (5). The pin solder fillets (5) might comprise between approximately 90 wt % to approximately 99 wt % tin and approximately 10 wt % to 1 wt % antimony. The die solder pads (3) might comprise between approximately 4 wt % to approximately 8 wt % bismuth, approximately 2 wt % to approximately 4 wt % silver, approximately 0 wt % to approximately 0.7 wt % copper, and approximately 87 wt % to approximately 92 wt % tin. The die solder pads (3) might comprise between approximately 7 wt % to approximately 20 wt % indium, between approximately 2 wt % to approximately 4.5 wt % silver, between approximately 0 wt % to approximately 0.7 wt % copper, between approximately 0 wt % to approximately 0.5 wt % antimony, and between approximately 74.3 wt % to approximately 90 wt % tin.

Abstract translation: 封装衬底（4）包括管芯焊盘（3）和管脚焊料圆角（5）。 销焊脚（5）可以包含约90重量％至约99重量％的锡和约10重量％至1重量％的锑。 裸片焊盘（3）可以包括约4重量％至约8重量％的铋，约2重量％至约4重量％的银，约0重量％至约0.7重量％的铜和约87重量％至约 92重量％的锡。 裸片焊盘（3）可包括约7重量％至约20重量％的铟，约2重量％至约4.5重量％的银，约0重量％至约0.7重量％的铜，约0重量％ 至约0.5重量％的锑，以及约74.3重量％至约90重量％的锡。

公开(公告)号：WO2007001598A2

公开(公告)日：2007-01-04

申请号：PCT/US2006/014625

申请日：2006-04-19

Applicant: ADVANCED MICRO DEVICES, INC. ,  MASTER, Raj, N. ,  ANNAD, Srinivasan, Ashok ,  PARTHASARATHY, Srinivasan ,  MUI, Yew, Cheong

Inventor： MASTER, Raj, N. ,  ANNAD, Srinivasan, Ashok ,  PARTHASARATHY, Srinivasan ,  MUI, Yew, Cheong

IPC: H01L21/60 ,  H01L23/498 ,  B23K35/26 ,  C22C13/00

CPC classification number: C22C13/02 ,  B23K35/262 ,  H01L23/49811 ,  H01L24/81 ,  H01L24/97 ,  H01L2224/16225 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15312 ,  H01L2924/19105 ,  H05K3/3463 ,  H05K2201/10318 ,  H05K2201/10674 ,  H05K2203/047 ,  H01L2224/81 ,  H01L2224/0401

Abstract: A package substrate (4) includes die solder pads (3) and pin solder fillets (5). The pin solder fillets (5) might comprise between approximately 90 wt % to approximately 99 wt % tin and approximately 10 wt % to 1 wt % antimony. The die solder pads (3) might comprise between approximately 4 wt % to approximately 8 wt % bismuth, approximately 2 wt % to approximately 4 wt % silver, approximately 0 wt % to approximately 0.7 wt % copper, and approximately 87 wt % to approximately 92 wt % tin. The die solder pads (3) might comprise between approximately 7 wt % to approximately 20 wt % indium, between approximately 2 wt % to approximately 4.5 wt % silver, between approximately 0 wt % to approximately 0.7 wt % copper, between approximately 0 wt % to approximately 0.5 wt % antimony, and between approximately 74.3 wt % to approximately 90 wt % tin.

Abstract translation: 封装基板（4）包括模焊盘（3）和焊脚焊脚（5）。 针焊料焊脚（5）可以包括约90重量％至约99重量％的锡和约10重量％至1重量％的锑。 模焊盘（3）可以包括约4重量％至约8重量％的铋，约2重量％至约4重量％的银，约0重量％至约0.7重量％的铜，以及约87重量％至约 92重量％锡。 模具焊盘（3）可以包括约7重量％至约20重量％的铟，约2重量％至约4.5重量％的银之间，约0重量％至约0.7重量％的铜之间，约0重量％ 至约0.5重量％的锑，以及约74.3重量％至约90重量％的锡。