公开(公告)号：WO2006027778A2

公开(公告)日：2006-03-16

申请号：PCT/IL2005000952

申请日：2005-09-08

Applicant: TECHNION RES & DEV FOUNDATION ,  LIFSHITZ EFRAT ,  KIGEL ARIEL ,  BRUMER-GILARY MAYA ,  SASHCHIUK ALDONA ,  AMIRAV LILAC

Inventor： LIFSHITZ EFRAT ,  KIGEL ARIEL ,  BRUMER-GILARY MAYA ,  SASHCHIUK ALDONA ,  AMIRAV LILAC

IPC: H01L21/44

CPC classification number: H01L29/22 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/0237 ,  H01L21/02417 ,  H01L21/02439 ,  H01L21/02485 ,  H01L21/0251 ,  H01L21/02521 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02628 ,  H01L29/221

Abstract: The invention relates to a core-alloyed shell semiconductor nanocrystal comprising: (i) a core of a semiconductor material having a selected band gap energy; (ii) a core-overcoating shell consisting of one or more layers comprised of an alloy of the said semiconductor of (i) and a second semiconductor; (iii) and an outer organic ligand layer, provided that the core semiconductor material is not HgTe. Preferably, the core semiconductor material is PbSe and the alloy shell semiconductor material has the PbSexS1-x structure.

Abstract translation: 本发明涉及一种芯 - 合金壳半导体纳米晶体，包括：（i）具有选定带隙能的半导体材料的芯; （ii）由一层或多层由（i）的所述半导体的合金和第二半导体组成的芯层外涂层; （iii）和外部有机配体层，条件是芯半导体材料不是HgTe。 优选地，芯半导体材料是PbSe，合金壳半导体材料具有PbSexS1-x结构。

公开(公告)号：WO2006027778A3

公开(公告)日：2006-03-16

申请号：PCT/IL2005/000952

申请日：2005-09-08

Applicant: TECHNION RESEARCH & DEVELOPMENT FOUNDATION LTD. ,  LIFSHITZ, Efrat ,  KIGEL, Ariel ,  BRUMER-GILARY, Maya ,  SASHCHIUK, Aldona ,  AMIRAV, Lilac

Inventor： LIFSHITZ, Efrat ,  KIGEL, Ariel ,  BRUMER-GILARY, Maya ,  SASHCHIUK, Aldona ,  AMIRAV, Lilac

IPC: C30B15/00 ,  C30B29/66 ,  C30B29/40 ,  C30B29/52 ,  C30B29/38 ,  C30B29/42 ,  C30B29/46 ,  C30B29/48

Abstract: The invention relates to a core-alloyed shell semiconductor nanocrystal comprising: (i) a core of a semiconductor material having a selected band gap energy; (ii) a core-overcoating shell consisting of one or more layers comprised of an alloy of the said semiconductor of (i) and a second semiconductor; (iii) and an outer organic ligand layer, provided that the core semiconductor material is not HgTe. Preferably, the core semiconductor material is PbSe and the alloy shell semiconductor material has the PbSexS1-x structure.

公开(公告)号：WO2004049522A3

公开(公告)日：2004-11-11

申请号：PCT/IL0300997

申请日：2003-11-25

Applicant: ELOP ELECTROOPTICS IND LTD ,  TECHNION RES & DEV FOUNDATION ,  GALUN EHUD ,  LIFSHITZ EFRAT ,  SIROTA MARINA ,  KRUPKIN VLADIMIR ,  SASHCHIUK ALDONA

Inventor： GALUN EHUD ,  LIFSHITZ EFRAT ,  SIROTA MARINA ,  KRUPKIN VLADIMIR ,  SASHCHIUK ALDONA

IPC: G02F1/35 ,  H01S3/113 ,  H01S3/11 ,  G02F1/355

CPC classification number: H01S3/113 ,  G02F1/3523 ,  H01S3/169

Abstract: A passive Q-switch (108) for a laser system (100), and a method for its production. The laser (100) is operative at near infrared wavelength region, including the eye-safe region. The Q-switch (108) includes a saturable absorber based on IV VI semiconductor nanocrystals (NCs), embedded in a polymer matrix. The NCs preferably include lead selenide or lead sulfide. The NCs may be surface passivated, and may feature a PbSe/PbS core-shell configuration.

Abstract translation: 一种用于激光系统（100）的无源Q开关（108）及其制造方法。 激光器（100）在近红外波长区域操作，包括眼睛安全区域。 Q开关（108）包括嵌入在聚合物基质中的基于IV VI半导体纳米晶体（NC）的可饱和吸收体。 NC最好包括硒化铅或硫化铅。 NC可以是表面钝化的，并且可以具有PbSe / PbS核 - 壳配置。

公开(公告)号：WO2004049522A2

公开(公告)日：2004-06-10

申请号：PCT/IL2003/000997

申请日：2003-11-25

Applicant: ELOP ELECTRO-OPTICS INDUSTRIES LTD. ,  TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LTD. ,  GALUN, Ehud ,  LIFSHITZ, Efrat ,  SIROTA, Marina ,  KRUPKIN, Vladimir ,  SASHCHIUK, Aldona

Inventor： GALUN, Ehud ,  LIFSHITZ, Efrat ,  SIROTA, Marina ,  KRUPKIN, Vladimir ,  SASHCHIUK, Aldona

IPC: H01S3/00

CPC classification number: H01S3/113 ,  G02F1/3523 ,  H01S3/169

Abstract: A passive Q-switch for a laser system, and a method for its production. The laser is operative at near infrared wavelength region, including the eye-safe region. The Q-switch includes a saturable absorber based on IV VI semiconductor nanocrystals (NCs), embedded in a polymer matrix. The NCs preferably include lead selenide or lead sulfide. The NCs may be surface passivated, and may feature a PbSe/PbS core-shell configuration.

Abstract translation: 用于激光系统的无源Q开关及其制造方法。 激光在近红外波长区域运行，包括眼睛安全区域。 Q开关包括嵌入在聚合物基体中的基于IV VI半导体纳米晶体（NC）的可饱和吸收体。 NC最好包括硒化铅或硫化铅。 NC可以是表面钝化的，并且可以具有PbSe / PbS核 - 壳配置。