公开(公告)号：WO2005048357A1

公开(公告)日：2005-05-26

申请号：PCT/US2003/035726

申请日：2003-11-10

Applicant: II-VI INCORPORATED ,  SZELES, Csaba ,  VYDYANATH, Honnavalli, R.

Inventor： SZELES, Csaba ,  VYDYANATH, Honnavalli, R.

IPC: H01L31/115

CPC classification number: H01L31/0296 ,  G01T1/24 ,  H01L21/02562 ,  H01L21/02576 ,  H01L21/02581 ,  H01L31/085

Abstract: A radiation detector made from a compound, or alloy, comprising CdxZn1-xTe (0 ≤ x ≤ 1), an element from column III or column VII of the periodic table in a concentration about 10 to 10,000 atomic parts per billion and an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu in a concentration about 10 to 10,000 atomic parts per billion exhibits full electrical compensation, high-resistivity, full depletion under an applied electrical bias and excellent charge transport.

Abstract translation: 由CdxZn1-xTe（0 <= x <= 1）的化合物或合金制成的放射线检测器，元素周期表第III列或第VII列的元素，浓度为10至10,000原子数十亿， 选自浓度约10至10,000原子十亿分之一的La，Ce，Pr，Nd，Pm，Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb和Lu中的元素表现出全电 补偿，高电阻率，在施加的电偏压下充分耗尽，并具有优异的电荷传输。

公开(公告)号：WO2007024302A3

公开(公告)日：2007-11-08

申请号：PCT/US2006018779

申请日：2006-05-16

Applicant: II VI INC ,  SZELES CSABA

Inventor： SZELES CSABA

IPC: G01T1/24

CPC classification number: G01T1/241 ,  H01L27/14658 ,  H01L31/022408 ,  H01L31/1032 ,  H01L31/115 ,  H01L31/1828 ,  Y02E10/543 ,  Y02P70/521

Abstract: The present invention is a radiation detector that includes a crystalline substrate formed of a II-VI compound and a first electrode covering a substantial portion of one surface of the substrate. A plurality of second, segmented electrodes is provided in spaced relation on a surface of the substrate opposite the first electrode. A passivation layer is disposed between the second electrodes on the surface of the substrate opposite the first electrode. The passivation layer can also be positioned between the substrate and one or both of the first electrode and each second electrode. The present invention is also a method of forming the radiation detector.

Abstract translation: 本发明是一种辐射探测器，其包括由II-VI化合物形成的晶体基板和覆盖基板的一个表面的大部分的第一电极。 多个第二分段电极以隔开的关系设置在与第一电极相对的基板的表面上。 钝化层设置在衬底的与第一电极相对的表面上的第二电极之间。 钝化层也可以位于衬底与第一电极和每个第二电极中的一个或两个之间。 本发明也是一种形成辐射探测器的方法。

公开(公告)号：WO2007024302A2

公开(公告)日：2007-03-01

申请号：PCT/US2006/018779

申请日：2006-05-16

Applicant: II-VI INCORPORATED ,  SZELES, Csaba

Inventor： SZELES, Csaba

IPC: G01T1/15

CPC classification number: G01T1/241 ,  H01L27/14658 ,  H01L31/022408 ,  H01L31/1032 ,  H01L31/115 ,  H01L31/1828 ,  Y02E10/543 ,  Y02P70/521

Abstract: The present invention is a radiation detector that includes a crystalline substrate formed of a II-VI compound and a first electrode covering a substantial portion of one surface of the substrate. A plurality of second, segmented electrodes is provided in spaced relation on a surface of the substrate opposite the first electrode. A passivation layer is disposed between the second electrodes on the surface of the substrate opposite the first electrode. The passivation layer can also be positioned between the substrate and one or both of the first electrode and each second electrode. The present invention is also a method of forming the radiation detector.

Abstract translation: 本发明是一种辐射检测器，其包括由II-VI化合物形成的晶体衬底和覆盖衬底的一个表面的大部分的第一电极。 多个第二分段电极以间隔的关系设置在与第一电极相对的基板的表面上。 钝化层设置在与第一电极相对的基板的表面上的第二电极之间。 钝化层也可以位于衬底与第一电极和每个第二电极中的一个或两个之间。 本发明也是形成放射线检测器的方法。

公开(公告)号：WO2009149062A1

公开(公告)日：2009-12-10

申请号：PCT/US2009/045933

申请日：2009-06-02

Applicant: II-VI INCORPORATED ,  SZELES, Csaba ,  PROKESCH, Michael ,  CHAKRABARTI, Utpal

Inventor： SZELES, Csaba ,  PROKESCH, Michael ,  CHAKRABARTI, Utpal

IPC: C30B15/04 ,  C30B11/00

CPC classification number: C30B33/02 ,  C30B29/46

Abstract: In a method of annealing a Cd 1-x Zn x Te sample/wafer, surface contamination is removed from the sample/wafer and the sample/wafer is then introduced into a chamber. The chamber is evacuated and Hydrogen or Deuterium gas is introduced into the evacuated chamber. The sample/wafer is heated to a suitable annealing temperature in the presence of the Hydrogen or Deuterium gas for a predetermined period of time.

Abstract translation: 在对Cd1-xZnxTe样品/晶片退火的方法中，从样品/晶片去除表面污染物，然后将样品/晶片引入室中。 将室抽真空，并将氢气或氘气引入抽真空室中。 在氢气或氘气存在下将样品/晶片加热到合适的退火温度一段预定的时间。

公开(公告)号：WO2003105197A1

公开(公告)日：2003-12-18

申请号：PCT/US2003/018225

申请日：2003-06-10

Applicant: II-VI INCORPORATED ,  SZELES, Csaba ,  LYNN, Kelvin, G.

Inventor： SZELES, Csaba ,  LYNN, Kelvin, G.

IPC: H01L21/00

CPC classification number: H01L31/02966 ,  C30B11/00 ,  C30B29/48 ,  H01L21/02562 ,  H01L21/0257 ,  H01L21/02576 ,  H01L21/02625 ,  H01L31/0296 ,  H01L31/085 ,  H01L31/1032 ,  H01L31/1832

Abstract: A radiation detector (Figure 1) made from an compound, or alloy, comprising CdxZn1-xTe (0 = x = 1), Pb in a concentration between 10 and 10,000 atomic parts per billion and at least one element selected from the group consisting of (i) Cland (ii) elements in column III of the periodic table in a concentration between 10 and 10,000 atomic parts per billion exhibits full electrical compensation, high-resistivity, full depletion under an applied electrical bias and excellent charge transport.

Abstract translation: 由包含CdxZn1-xTe（0 = x = 1）的化合物或合金制成的辐射检测器（图1），浓度在10至10,000原子百分数之间的Pb和至少一种选自以下的元素： （i）元素周期表第III列中元素（ⅱ）元素的浓度为10至10,000原子十亿分之十，在施加的电气偏压和优异的电荷传输下，表现出全电补偿，高电阻率，全耗尽。

公开(公告)号：WO2006081532A1

公开(公告)日：2006-08-03

申请号：PCT/US2006/003152

申请日：2006-01-27

Applicant: II-VI INCORPORATED ,  SZELES, Csaba ,  CAMERON, Scott, E. ,  MATTERA, Vincent, D., Jr. ,  CHAKRABARTI, Utpal, K.

Inventor： SZELES, Csaba ,  CAMERON, Scott, E. ,  MATTERA, Vincent, D., Jr. ,  CHAKRABARTI, Utpal, K.

IPC: G01T1/24 ,  B05D3/06

CPC classification number: H01L31/08 ,  H01L31/03042 ,  Y02E10/544 ,  Y02P70/521

Abstract: A radiation detector crystal is made from CdxZn1 -xTe, where 0 ≤x ≤l; an element from column III or column VII of the periodic table, desirably in a concentration of about 1 to 10,000 atomic parts per billion; and the element Ruthenium (Ru), the element Osmium (Os) or the combination of Ru and Os, desirably in a concentration of about 1 to 10,000 atomic parts per billion using a conventional crystal growth method, such as, for example, the Bridgman method, the gradient freeze method, the electro-dynamic gradient freeze method, the so-call traveling heater method or by the vapor phase transport method. The crystal can be used as the radiation detecting element of a radiation detection device configured to detect and process, without limitation, X-ray and Gamma ray radiation events.

Abstract translation: 辐射检测器晶体由CdxZn1-xTe制成，其中0 = x = 1; 元素周期表第三列或第七列的元素，理想地为约1至10,000原子数十亿的浓度; 并且使用常规的晶体生长法，例如Br​​idgman，元素钌（Ru），元素锇（Os）或Ru和Os的组合，理想地为约1至10,000原子百分比的浓度。 方法，梯度冻结法，电动态梯度冷冻法，所谓呼气加热法或气相输送法。 该晶体可以用作辐射检测装置的辐射检测元件，该辐射检测元件被配置成检测并处理但不限于X射线和伽马射线事件。