公开(公告)号：WO2011031589A2

公开(公告)日：2011-03-17

申请号：PCT/US2010/047380

申请日：2010-08-31

Applicant: LAM RESEARCH CORPORATION ,  VALCORE JR., John, C. ,  ZERELLA, Mark

Inventor： VALCORE JR., John, C. ,  ZERELLA, Mark

IPC: H01L21/66 ,  H01L21/687 ,  H01L21/205 ,  H01L21/3065

CPC classification number: H01L21/6833 ,  H01J37/32091 ,  H01J37/32935

Abstract: A method for identifying an optimal time for mechanically removing a substrate from a lower electrode in a processing chamber of a plasma processing system is provided. The method includes employing a set of sensors to monitor a set of electrical characteristics of a plasma, wherein the plasma is formed over the substrate during a dechuck event. The method also includes sending processing data about the set of electrical characteristics to a data collection device. The method further includes comparing the processing data against a set of threshold values. The method yet also includes, if the processing data traverses the threshold values, removing the substrate from the lower electrode since a substrate-released event has occurred.

Abstract translation: 提供了一种用于识别在等离子体处理系统的处理室中从下电极机械地去除衬底的最佳时间的方法。 该方法包括采用一组传感器来监测等离子体的一组电特性，其中在脱帽事件期间在衬底上形成等离子体。 该方法还包括将关于一组电特性的处理数据发送到数据收集装置。 该方法还包括将处理数据与一组阈值进行比较。 该方法还包括，如果处理数据穿过阈值，则由于发生了衬底释放事件而从底部电极去除衬底。

公开(公告)号：WO2011063246A2

公开(公告)日：2011-05-26

申请号：PCT/US2010057450

申请日：2010-11-19

Applicant: LAM RES CORP ,  VALCORE JR JOHN C

Inventor： VALCORE JR JOHN C

IPC: H05H1/46 ,  H01L21/3065

CPC classification number: G01N27/62

Abstract: A method and apparatus for compensating a bias voltage at the wafer by measuring RF voltage signals in RF driven plasma including at least an electrostatic chuck (ESC), a capacitive divider, a signal processing and signal conditioning network is disclosed. The bias compensation device includes a capacitive divider to detect the RF voltage at the ESC, a signal conditioning network for the purpose of filtering specific RF signals of interests, and a signal processing unit for computing the DC wafer potential from the filtered RF signals.

Abstract translation: 公开了一种通过测量至少包括静电吸盘（ESC），电容分压器，信号处理和信号调节网络的RF驱动等离子体中的RF电压信号来补偿晶片上的偏置电压的方法和装置。 偏置补偿装置包括用于检测ESC处的RF电压的电容分压器，用于过滤感兴趣的特定RF信号的信号调节网络以及用于根据经滤波的RF信号计算DC晶片电位的信号处理单元。

公开(公告)号：WO2012078569A1

公开(公告)日：2012-06-14

申请号：PCT/US2011/063422

申请日：2011-12-06

Applicant: LAM RESEARCH CORPORATION ,  VALCORE, JR., John C. ,  POVOLNY, Henry S.

Inventor： VALCORE, JR., John C. ,  POVOLNY, Henry S.

IPC: G01R31/26

CPC classification number: H01J37/32137 ,  G05B15/02 ,  G05B19/418 ,  G05B2219/45031 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32917 ,  H01J37/32926 ,  H01J37/3299

Abstract: A method for controlling a plasma processing system using wafer bias information derived from RF voltage information is proposed. The RF voltage is processed via an analog or digital methodology to obtain peak voltage information at least for each of the fundamental frequencies and the broadband frequency. The peak voltage information is then employed to derive the wafer bias information to serve as a feedback or control signal to hardware/software of the plasma processing system.

Abstract translation: 提出了使用从RF电压信息导出的晶片偏置信息来控制等离子体处理系统的方法。 RF电压通过模拟或数字方法进行处理，以获得至少对于每个基本频率和宽带频率的峰值电压信息。 然后使用峰值电压信息来导出晶片偏置信息以用作到等离子体处理系统的硬件/软件的反馈或控制信号。

公开(公告)号：WO2011031589A3

公开(公告)日：2011-06-03

申请号：PCT/US2010047380

申请日：2010-08-31

Applicant: LAM RES CORP ,  VALCORE JR JOHN C ,  ZERELLA MARK

Inventor： VALCORE JR JOHN C ,  ZERELLA MARK

IPC: H01L21/66 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/687

CPC classification number: H01L21/6833 ,  H01J37/32091 ,  H01J37/32935

Abstract: A method for identifying an optimal time for mechanically removing a substrate from a lower electrode in a processing chamber of a plasma processing system is provided. The method includes employing a set of sensors to monitor a set of electrical characteristics of a plasma, wherein the plasma is formed over the substrate during a dechuck event. The method also includes sending processing data about the set of electrical characteristics to a data collection device. The method further includes comparing the processing data against a set of threshold values. The method yet also includes, if the processing data traverses the threshold values, removing the substrate from the lower electrode since a substrate-released event has occurred.

Abstract translation: 提供了一种用于识别用于从等离子体处理系统的处理室中的下电极机械地移除衬底的最佳时间的方法。 该方法包括使用一组传感器来监测等离子体的一组电特性，其中在脱钩事件期间等离子体形成在衬底上方。 该方法还包括将关于该组电特性的处理数据发送到数据收集装置。 该方法还包括将处理数据与一组阈值进行比较。 该方法还包括，如果处理数据横越阈值，则由于衬底释放事件已经发生而从下电极移除衬底。

公开(公告)号：WO2011063246A3

公开(公告)日：2011-05-26

申请号：PCT/US2010/057450

申请日：2010-11-19

Applicant: LAM RESEARCH CORPORATION ,  VALCORE JR., John C.

Inventor： VALCORE JR., John C.

IPC: H05H1/46 ,  H01L21/3065

Abstract: A method and apparatus for compensating a bias voltage at the wafer by measuring RF voltage signals in RF driven plasma including at least an electrostatic chuck (ESC), a capacitive divider, a signal processing and signal conditioning network is disclosed. The bias compensation device includes a capacitive divider to detect the RF voltage at the ESC, a signal conditioning network for the purpose of filtering specific RF signals of interests, and a signal processing unit for computing the DC wafer potential from the filtered RF signals.