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    DATA DRIVEN SMART NON-PNEUMATIC TIRES
    2.
    发明申请
    DATA DRIVEN SMART NON-PNEUMATIC TIRES 审中-公开

    公开(公告)号：WO2022261668A1

    公开(公告)日：2022-12-15

    申请号：PCT/US2022/072876

    申请日：2022-06-10

    Applicant: VIRGINIA TECH INTELLECTUAL PROPERTIES, INC.

    Inventor： GUPTA, Utkarsh ,  NALAWADE, Rajvardhan ,  TAHERI, Saied

    IPC: G01M17/02 ,  B60C19/00 ,  G06N3/08 ,  G06N20/00 ,  H01L41/09

    Abstract: Various embodiments of a smart non-pneumatic tire and methods for generating a mean vibration characteristic of the smart non-pneumatic tire are described. In one embodiment, a method for measuring the mean vibration characteristic includes receiving tire-road contact acceleration data from an accelerometer that is secured near a tire-surface contact region, where the tire-road contact acceleration data includes data captured by the accelerometer over a duration of time while a tread along an outer periphery of a sector of the tire contacts a surface. The method further includes receiving velocity data for the tire and load data for the tire over the duration of time. The method further includes generating a mean vibration characteristic based on the above-mentioned data. The method also includes changing a stiffness of spokes of the tire based on the generated mean vibration characteristic in some cases.

    DOUBLE-SIDE COOLED POWER MODULES
    4.
    发明申请
    DOUBLE-SIDE COOLED POWER MODULES 审中-公开

    公开(公告)号：WO2022217186A2

    公开(公告)日：2022-10-13

    申请号：PCT/US2022/071120

    申请日：2022-03-14

    Applicant: VIRGINIA TECH INTELLECTUAL PROPERTIES INC.

    Inventor： LU, Guo-Quan ,  ZHANG, Zichen

    IPC: H01L23/538 ,  H01L23/28 ,  H02J7/00

    Abstract: Multi-chip module packaging technologies for GaN and other devices are described. The power module packaging technology described can be applied to all types of medium-voltage devices, such as silicon (Si), silicon carbide (SiC), gallium nitride (GaN), or the latest gallium oxide (Ga2O3) devices. In one example, a power module includes a first substrate, a second substrate, a sintered-silver semiconductor die pillar, the pillar being positioned between the first substrate and the second substrate, a terminal on a first side of the power module, and a terminal on a second side of the power module.

    HIGH-VISCOSITY RESINS IN MASK PROJECTION STEREOLITHOGRAPHY
    5.
    发明申请
    HIGH-VISCOSITY RESINS IN MASK PROJECTION STEREOLITHOGRAPHY 审中-公开

    公开(公告)号：WO2022198221A1

    公开(公告)日：2022-09-22

    申请号：PCT/US2022/071196

    申请日：2022-03-17

    Applicant: VIRGINIA TECH INTELLECTUAL PROPERTIES INC.

    Inventor： RAU, Daniel A. ,  WILLIAMS, Christopher B.

    IPC: B29C64/135 ,  B29C64/124 ,  B29C64/106 ,  B29C64/00

    Abstract: A method for fabricating an item using a high-viscosity photoresin is described that includes providing tooling that comprises an extruder and a light source; depositing, by the extruder of the tooling, a first non-patterned layer of the high-viscosity photoresin; selectively photocuring, by the light source of the tooling, the first non-patterned layer into a first predetermined layer shape; depositing, by the extruder of the tooling, a second nonpatterned layer of the high-viscosity photoresin; and selectively photocuring, by the light source of the tooling, the second non-patterned layer into a second predetermined layer shape.

    SOLVENT-RESISTANT SELF-CROSSLINKED POLY(ETHER IMIDE)S
    6.
    发明申请
    SOLVENT-RESISTANT SELF-CROSSLINKED POLY(ETHER IMIDE)S 审中-公开

    公开(公告)号：WO2022198169A1

    公开(公告)日：2022-09-22

    申请号：PCT/US2022/070956

    申请日：2022-03-04

    Applicant: VIRGINIA TECH INTELLECTUAL PROPERTIES INC.

    Inventor： LIU, Guoliang ,  XU, Zhen ,  ESKER, Alan Roger ,  LIU, Gehui

    IPC: B01D67/00 ,  B01J20/26

    Abstract: In one aspect, the disclosure relates to azide-containing poly(ether imide) polymers (PEIs; N3-PEI-N3) synthesized via a heterogenous diazotizationazidation reaction. In one aspect, the azide-containing PEIs can be solution-cast into films and then thermally crosslinked. In a further aspect, the crosslinked PEIs (X-PEIs) exhibit superior thermal and mechanical properties. In a still further aspect, X-PEIs display outstanding resistance to classical solvents for conventional PEI, including THF, DCM, chloroform, DMF, and NMP. In another aspect, with an initial number average molecular weight (Mn) of 8.9 kDa, the disclosed azide-containing PEIs have a high crosslinking density and thus possess desirable thermal, mechanical, and solvent resistance properties.

    ELECTROPORATION-BASED PLATFORM FOR GENERATION OF TUMOR-ACTIVATED T CELLS
    8.
    发明申请
    ELECTROPORATION-BASED PLATFORM FOR GENERATION OF TUMOR-ACTIVATED T CELLS 审中-公开

    公开(公告)号：WO2022066768A1

    公开(公告)日：2022-03-31

    申请号：PCT/US2021/051551

    申请日：2021-09-22

    Applicant: VIRGINIA TECH INTELLECTUAL PROPERTIES, INC.

    Inventor： DAVALOS, Rafael, V. ,  ALLEN, Irving, C. ,  VERBRIDGE, Scott, S. ,  ALINEZHADBALALAMI, Nastaran

    IPC: A61K35/17 ,  A61N1/32 ,  A61P35/00

    Abstract: Expansion of cytotoxic T lymphocytes (CTLs) is a crucial step in almost all cancer immunotherapeutic methods. Current techniques for expansion of tumor-reactive CTLs present major limitations. The present invention comprises a novel method to effectively produce and expand tumor-activated CTLs using high-voltage pulsed electric fields. Tumor cells were subjected to high-frequency irreversible electroporation (HFIRE) with various electric field magnitudes and pulse widths, or irreversible electroporation (IRE). The treated tumor cells were subsequently cocultured with CD 8+ cytotoxic T cells along with antigen-presenting cells. Tumor- activated CTLs can be produced and expanded when exposed to treated tumor cells. The activated CTLs produced with the present invention could be used for clinical applications with the goal of targeting and eliminating tumors.

    SENSOR-BASED HIGH-THROUGHPUT MATERIAL CHARACTERIZATION PLATFORM AND METHODS OF USE THEREOF
    9.
    发明申请
    SENSOR-BASED HIGH-THROUGHPUT MATERIAL CHARACTERIZATION PLATFORM AND METHODS OF USE THEREOF 审中-公开

    公开(公告)号：WO2021211869A1

    公开(公告)日：2021-10-21

    申请号：PCT/US2021/027521

    申请日：2021-04-15

    Applicant: VIRGINIA TECH INTELLECTUAL PROPERTIES, INC.

    Inventor： JOHNSON, Blake ,  HARING, Alexander ,  SINGH, Manjot ,  ZHANG, Junru

    IPC: G01N35/00 ,  G01N9/00 ,  G01N29/02 ,  G01N29/036 ,  G01N29/22 ,  G01N29/24 ,  B81B3/00

    Abstract: Systems and methods for measuring physical material properties of a plurality of samples with high throughput can be carried out with high reliability. The system can include a three-axis robotic structure for moving the target to a desired position in a three-dimensional space, a piezoelectric millimeter cantilever sensor mounted on the three-axis robotic structure, the piezoelectric millimeter cantilever sensor configured to have at least one electrical parameter as a function of its physical environment, and a controller configured to instruct the three-axis robotic structure to position the millimeter cantilever sensor at a first position over a first well including a first fluid sample, instruct the three-axis robotic structure to lower the piezoelectric millimeter cantilever sensor into the first fluid sample, instruct the three-axis robotic structure to retract the piezoelectric millimeter cantilever and move it over a second position over, and lower into a second well including a second fluid sample.

    GENERATING ERROR-RESISTANT QUANTUM CONTROL PULSES FROM GEOMETRICAL CURVES
    10.
    发明申请
    GENERATING ERROR-RESISTANT QUANTUM CONTROL PULSES FROM GEOMETRICAL CURVES 审中-公开

    公开(公告)号：WO2021067666A1

    公开(公告)日：2021-04-08

    申请号：PCT/US2020/053898

    申请日：2020-10-02

    Applicant: VIRGINIA TECH INTELLECTUAL PROPERTIES INC.

    Inventor： BARNES, Edwin ,  ZENG, Junkai

    IPC: G06N10/00 ,  G01R33/20 ,  G06F17/11

    Abstract: Aspects of generating error-resistant quantum control pulses from geometrical curves are described. In some embodiments, a closed space curve is parameterized for a target gate operation of a quantum computing device. The closed space curve corresponds to an evolution operator of a time-dependent Schrӧdinger equation associated with the target gate operation. A control field definition is identified for the target gate operation based at least in part on a geometrical analysis of the evolution operator of the time-dependent Schrӧdinger equation. The target gate operation is implemented for the quantum computing device based on the control field definition.

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