公开(公告)号：WO2006137851A3

公开(公告)日：2006-12-28

申请号：PCT/US2005/032620

申请日：2005-09-16

Applicant: VIRGINIA TECH INTELLECTUAL PROPERTIES, INC. ,  LU, Guo-Quan ,  LEI, Guangyin ,  CALATA, Jesus, Noel

Inventor： LU, Guo-Quan ,  LEI, Guangyin ,  CALATA, Jesus, Noel

IPC: B22F9/24 ,  B32B5/16

Abstract: Gold suspensions with high concentrations of gold, and silver suspensions with high concentrations of silver, are provided. Gold or silver nanoparticles are put into suspension, where the metal nanoparticles are paired with silica. Biocompatible suspensions are one application. Noble metal particle, attached to the surface of silica particles, form a stable, non-agglomerated suspension due to the steric and repulsive properties of the silica particles. The noble metal particles are prepared by activating the surface of the silica particles (100') and erecting nucleation sites for metal particle growth (121), and then growing the metal particles at the nucleation sites (13') through a reduction procedure (110').

公开(公告)号：WO1997038481A1

公开(公告)日：1997-10-16

申请号：PCT/US1997005926

申请日：1997-04-10

Applicant: VIRGINIA TECH INTELLECTUAL PROPERTIES, INC.

Inventor： VIRGINIA TECH INTELLECTUAL PROPERTIES, INC. ,  LU, Guo-Quan ,  BANG, Jaecheol

IPC: H02N13/00

CPC classification number: H02N13/00

Abstract: Processes for providing a durable glass-ceramic dielectric layer on an electrically conductive substrate are disclosed. Also disclosed are electrostatic chucks (1) made by the processes that include an electrode (10) coated with at least one metallic interlayer (12, 14) and a glass-ceramic layer (16), in particular, cordierite, on the at least one metallic interlayer.

Abstract translation: 公开了在导电基板上提供耐用的玻璃 - 陶瓷介电层的工艺。 还公开了通过包括至少涂覆有至少一个金属中间层（12,14）和玻璃 - 陶瓷层（16）的电极（10），特别是堇青石的方法制造的静电卡盘（1），至少 一个金属中间层。

公开(公告)号：WO2022217186A2

公开(公告)日：2022-10-13

申请号：PCT/US2022/071120

申请日：2022-03-14

Applicant: VIRGINIA TECH INTELLECTUAL PROPERTIES INC.

Inventor： LU, Guo-Quan ,  ZHANG, Zichen

IPC: H01L23/538 ,  H01L23/28 ,  H02J7/00

Abstract: Multi-chip module packaging technologies for GaN and other devices are described. The power module packaging technology described can be applied to all types of medium-voltage devices, such as silicon (Si), silicon carbide (SiC), gallium nitride (GaN), or the latest gallium oxide (Ga2O3) devices. In one example, a power module includes a first substrate, a second substrate, a sintered-silver semiconductor die pillar, the pillar being positioned between the first substrate and the second substrate, a terminal on a first side of the power module, and a terminal on a second side of the power module.

公开(公告)号：WO1998007231A1

公开(公告)日：1998-02-19

申请号：PCT/US1997013877

申请日：1997-08-13

Applicant: VIRGINIA TECH INTELLECTUAL PROPERTIES, INC.

Inventor： VIRGINIA TECH INTELLECTUAL PROPERTIES, INC. ,  LU, Guo-Quan ,  BANG, Jaecheol

IPC: H02N13/00

CPC classification number: H02N13/00 ,  H01L21/6831 ,  H01L21/6833 ,  Y10T279/23

Abstract: Processes for providing a durable glass dielectric layer (16) on an electrically conductive substrate (10) are disclosed. Also disclosed are electrostatic chucks (1) made by the process that include an electrically conductive substrate (10) coated with a layer of glass (16) having a composition that includes 60 wt.% to 80 wt.% SiO2

Abstract translation: 公开了一种用于在导电基板（10）上提供耐久的玻璃介电层（16）的工艺。 还公开了通过包括涂覆有玻璃（16）的导电基底（10）的方法制成的静电卡盘（1），其具有包括60重量％至80重量％的SiO 2

公开(公告)号：WO2022213013A1

公开(公告)日：2022-10-06

申请号：PCT/US2022/071087

申请日：2022-03-11

Applicant: VIRGINIA TECH INTELLECTUAL PROPERTIES INC.

Inventor： LU, Guo-Quan ,  DING, Chao

IPC: H01L25/07 ,  H01L23/34 ,  H01L23/373 ,  H01L23/536 ,  H01L25/04 ,  H01L25/18

Abstract: Planar, double-side cooled half-bridge power modules using sintered-silver interposers and all sintered-silver joints are described. Thermo-mechanical simulations showed that use of the sintered-silver interposers reduce the thermo-mechanical stresses at vulnerable interfaces as compared to using solid copper interposers. The porous sintered-silver interposers are also easily deformable under a low load, which improves the yield of module interconnections in the presence of imperfections caused by variations in die thickness, interposer height, and substrate distortion. Results on the electrical performance of the modules validate the fabrication approach for the modules, for making high power-density converters with reliable operations at high junction temperatures.

公开(公告)号：WO2005079353A2

公开(公告)日：2005-09-01

申请号：PCT/US2005/004567

申请日：2005-02-14

Applicant: VIRGINIA TECH INTELLECTUAL PROPERTIES, INC. ,  LU, Guo-Quan ,  BAI, John, G. ,  CALATA, Jesus, N. ,  ZHANG, Zhiye

Inventor： LU, Guo-Quan ,  BAI, John, G. ,  CALATA, Jesus, N. ,  ZHANG, Zhiye

IPC: H01B1/22 ,  H01B1/24 ,  H05K1/09 ,  H05K3/00 ,  H05K3/32 ,  H05K3/34

CPC classification number: H01L24/27 ,  B22F2998/00 ,  B22F2998/10 ,  B23K35/0244 ,  B23K35/3006 ,  C22C1/0466 ,  H01B1/22 ,  H01L24/29 ,  H01L2224/27332 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/29399 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/3025 ,  H05K1/097 ,  H05K3/321 ,  H05K3/341 ,  H05K3/3484 ,  H05K2203/1126 ,  H05K2203/1131 ,  H05K2203/1453 ,  B22F9/24 ,  B22F1/0018 ,  B22F3/22 ,  B22F3/10 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2924/00015

Abstract: A paste including metal or metal alloy particles (which are preferably silver or silver alloy), a dispersant material, and a binder is used to form an electrical, mechanical or thermal interconnect between a device and a substrate. By using nano scale particles ( i.e., those which are less than 500 nm in size and most preferably less than 100 nm in size), the metal or metal alloy particles can be sintered at a low temperature to form a metal or metal alloy layer which is desired to allow good electrical, thermal and mechanical bonding, yet the metal or metal alloy layer can enable usage at a high temperature such as would be desired for SiC, GaN, or diamond ( e.g., wide bandgap devices). Furthermore, significant application of pressure to form the densified layers is not required, as would be the case with micrometer sized particles. In addition, the binder can be varied so as to insulate the metal particles until a desired sintering temperature is reached; thereby permitting fast and complete sintering to be achieved.

Abstract translation: 包括金属或金属合金颗粒（其优选为银或银合金），分散剂材料和粘合剂的糊剂用于在器件和基板之间形成电，机械或热互连 。 通过使用纳米级粒子（即尺寸小于500nm，最优选小于100nm的那些），金属或金属合金粒子可以在低温下烧结以形成 期望允许良好的电，热和机械结合的金属或金属合金层，但是金属或金属合金层能够在高温下使用，例如对于SiC，GaN或金刚石所期望的（例如 ，宽带隙器件）。 此外，不需要显着的压力形成致密化层，如微米级颗粒的情况那样。 另外，可以改变粘合剂以使金属颗粒绝缘直至达到所需的烧结温度; 从而实现快速和完全的烧结。