Abstract:
A method of controlling polishing includes polishing a first substrate having an overlying layer on an underlying layer or layer structure. During polishing, the substrate is monitored with an in-situ monitoring system to generate a sequence of measurements. The measurements are sorted into groups, each group associated with a different zone of a plurality of zones on the substrate. For each zone, a time at which the overlying layer is cleared is determined based on the measurements from the associated group. At least one second adjusted polishing pressure for at least zone is calculated based on a pressure applied in the at least one zone during polishing the substrate, the time for the at least one zone, and the time for another zone. A second substrate is polished using the at least one adjusted polishing pressure.
Abstract:
A method of controlling polishing includes polishing a first substrate having an overlying layer on an underlying layer or layer structure. During polishing, the substrate is monitored with an in-situ monitoring system to generate a sequence of measurements. The measurements are sorted into groups, each group associated with a different zone of a plurality of zones on the substrate. For each zone, a time at which the overlying layer is cleared is determined based on the measurements from the associated group. At least one second adjusted polishing pressure for at least zone is calculated based on a pressure applied in the at least one zone during polishing the substrate, the time for the at least one zone, and the time for another zone. A second substrate is polished using the at least one adjusted polishing pressure.
Abstract:
An apparatus for chemical mechanical polishing includes a platen having a surface to support a polishing pad, and an eddy current monitoring system to generate an eddy current signal. The eddy current monitoring system includes a core and a coil wound around a portion of the core. The core includes a back portion, a first prong extending from the back portion in a first direction normal to the surface of the platen and having a width in a second direction parallel to the surface of the platen, and second and third prongs extending from the back portion in parallel with the first protrusion, the second and third prongs positioned on opposite sides of and equidistant from the first prong. A spacing between each of the second and third prongs and the first prong is approximately equal to twice the width of the first prong.
Abstract:
A system and method perform structure-preserving smoothing (SPS) using a data adaptive method for smoothing 3D post-stacked seismic attributes which reduces random noise while preserving the structure without prior computation of its orientation. The data is smoothe within a neighborhood sub-window along a set of predefined orientations, and the best smoothing result is then selected for output. The orientation corresponding to the best result often approximates the true structure orientation embedded in the data, so that the embedded structure is thus preserved. The SPS method can also be combined with median, alpha-trim, symmetric near neighbor, or edge-preserving filters. The SPS method is an effective way to reduce random noise and eliminate noise footprints, and to enhance coherence and curvature attributes.
Abstract:
A system and method identify and display random noise in three dimensional (3-D) seismic data utilizing a 3-D operator to reduce the effects of seismic structure on noise identification. The 3-D operator is derived using statements of required performance in 3-D. The 3-D operator is applied on a pixel-by-pixel basis to each of the pixels in the 3-D post- stacked data to display images in a 3-D display or to output an estimate of noise that is substantially independent of the image structure. The resulting display is generated in colors to indicate noise amplitude to facilitate location of noisy regions in the original display.
Abstract:
A system and method use 2D and 3D numerical gradient operators for reducing anisotropic inaccuracies in digital image processing. Enhanced isotropic operators are derived by first parameterizing corresponding numerical operators, followed by determining the parameters for the operators by matching analytical gradients with numerical gradients, which produces generic frequency-independent operators. The system and method also optimize the design of operators for use at any given frequency range needed for any special purpose application.
Abstract:
In polishing a substrate having a layer of GST disposed over an underlying layer, during polishing, a non-polarized light beam is directed onto the layer of GST. The non-polarized light beam reflects from the first substrate to generate a reflected light beam having an infra-red component. A sequence of measurements of intensity of the infra-red component of the reflected light beam are generated, and, in a processor, a time at which the sequence of measurements exhibits a predefined feature is determined.
Abstract:
A method of chemical mechanical polishing a metal layer on a substrate includes polishing the metal layer on the substrate at first and second polishing stations, monitoring thickness of the metal layer during polishing at the first and second polishing station with first and second eddy current monitoring systems having different resonant frequencies, and controlling pressures applied by a carrier head to the substrate during polishing at the first and second polishing stations to improve uniformity based on thickness measurements from the first and second eddy current monitoring systems.
Abstract:
A chemical mechanical polishing apparatus includes a metrology system that detects the thickness of the polishing pad as semiconductor wafers are processed and the thickness of the polishing pad is reduced. The chemical mechanical polishing apparatus includes a controller that adjusts the rate of material removal of a conditioning disk when areas of the polishing surface are detected that are higher or lower than the adjacent areas of the polishing pad.
Abstract:
A CMP method for polishing a phase change alloy on a substrate surface including positioning the substrate comprising a phase change alloy material on a platen containing a polishing pad and delivering a polishing slurry to the polishing pad. The polishing slurry includes colloidal particles with a particle size less than 60 nm, in an amount between 0.2% to about 10% by weight of slurry, a pH adjustor, a chelating agent, an oxidizing agent in an amount less than 1% by weight of slurry, and polyacrylic acid. The substrate on the platen is polished to remove a portion of the phase change alloy. A rinsing solution for rinsing the substrate on the platen includes deionized water and at least one component in the deionized water where the component selected from the group consisting of polyethylene imine, polyethylene glycol, polyacrylic amide, alcohol ethoxylates, polyacrylic acid, an azole containing compound, benzo-triazole, and combinations thereof.