RE-EMITTING SEMICONDUCTOR CONSTRUCTION WITH ENHANCED EXTRACTION EFFICIENCY
    4.
    发明申请
    RE-EMITTING SEMICONDUCTOR CONSTRUCTION WITH ENHANCED EXTRACTION EFFICIENCY 审中-公开
    重新发射半导体结构,具有提高效率

    公开(公告)号:WO2010129412A1

    公开(公告)日:2010-11-11

    申请号:PCT/US2010/033142

    申请日:2010-04-30

    Abstract: A stack of semiconductor layers (310) forms a re-emitting semiconductor construction (RSC). The stack (310) includes an active region (316) that converts light at a first wavelength to light at a second wavelength, the active region (316) including at least one potential well. The stack (310) also includes an inactive region (318) extending from an outer surface of the stack to the active region. Depressions (326) are formed in the stack (310) that extend from the outer surface into the inactive region (318). An average depression depth is at least 50% of a thickness of the inactive region. Alternatively, the average depression depth is at least 50% of a nearest potential well distance. Still other alternative characterizations of the depressions (326) are also disclosed. The depressions (326) may have at least a 40% packing density in plan view. The depressions (326) may also have a substantial portion of their projected surface area associated with obliquely inclined surfaces.

    Abstract translation: 一叠半导体层(310)形成再发射半导体结构(RSC)。 堆叠(310)包括将第一波长的光转换成第二波长的光的有源区(316),所述有源区(316)包括至少一个势阱。 堆叠(310)还包括从堆叠的外表面延伸到活动区域的非活性区域(318)。 凹陷(326)形成在从外表面延伸到非活动区域(318)的堆叠(310)中。 平均凹陷深度为非活性区域的厚度的至少50%。 或者,平均凹陷深度为最近的潜在井距的至少50%。 还公开了凹陷(326)的其他替代表征。 在平面图中,凹陷(326)可以具有至少40%的包装密度。 凹陷(326)也可以具有与倾斜倾斜表面相关联的其投影表面积的大部分。

    FRONT-LIT REFLECTIVE DISPLAY DEVICE
    8.
    发明申请
    FRONT-LIT REFLECTIVE DISPLAY DEVICE 审中-公开
    前置反射显示装置

    公开(公告)号:WO2012116129A1

    公开(公告)日:2012-08-30

    申请号:PCT/US2012/026237

    申请日:2012-02-23

    Abstract: This application describes a front. lit reflective display assembly including a reflective display and an illumination article (600) for front - lighting the display when the article is optically coupled to a light source (601). The illumination article includes a variable index light extraction layer (630) optically coupled to a lightguide (610). The variable index light extraction layer has first and second regions, the first region comprising nanovoided polymeric material, the second region comprising the nanovoided polymeric material and an additional material, the first and second regions being disposed such that for light being transported at a supercritical angle in the lightguide, the variable index light ectraction layer selectively extracts the light in a predetermined way based on the geometic arrangement of the first and second regions. Front- lit reflective display device including the front- lit reflective display assembly optically coupled to a light source are also described.

    Abstract translation: 本应用程序描述了前端。 包括反射显示器和用于在制品光学耦合到光源(601)时用于使显示器正面照明的照明制品)。 照明制品包括光学耦合到光导(610)的可变折射率光提取层(630)。 所述可变折射率光提取层具有第一和第二区域,所述第一区域包括纳米弹性聚合物材料,所述第二区域包含所述纳米弹性聚合物材料和附加材料,所述第一和第二区域被设置成使得对于以超临界角 在光导中,可变索引光选择层基于第一和第二区域的几何布置选择性地以预定方式提取光。 还描述了包括光学耦合到光源的前照式反射显示组件的前照式反射显示装置。

    PARTICLE REFLOW ETCHING
    9.
    发明申请
    PARTICLE REFLOW ETCHING 审中-公开
    颗粒反射蚀刻

    公开(公告)号:WO2010068460A2

    公开(公告)日:2010-06-17

    申请号:PCT/US2009065784

    申请日:2009-11-24

    CPC classification number: H01L33/22 H01L33/0095

    Abstract: A particle reflow etching method. Coating a dispersed particle solution on a substrate, melting the particles, and etching the substrate. The particles may optionally be etched before melting. Applying a hard mask to a substrate and coating a dispersed particle solution on the hard mask, melting the particles and etching the surface of the hard mask. An article with a substrate and a coating of melted particles. The article may also have a hard mask on the substrate.

    Abstract translation: 一种粒子回流蚀刻方法。 将分散的颗粒溶液涂布在基材上,熔化颗粒并蚀刻基材。 可以任选地在熔融之前蚀刻颗粒。 将硬掩模施加到基底上并将分散的颗粒溶液涂覆在硬掩模上,熔化颗粒并蚀刻硬掩模的表面。 具有底物和熔融颗粒涂层的物品。 该制品也可以在基材上具有硬掩模。

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